Continuous-wave operation and Q-switched mode locking of Cr4+:YAG microchip lasers

2001 ◽  
Author(s):  
T. R. Schibli ◽  
T. Kremp ◽  
U. Morgner ◽  
F. X. Kärtner ◽  
R. Butendeich ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Mode Locking ◽  
Microchip Lasers ◽  
Continuous Wave Operation

Continuous-wave operation and Q-switched mode locking of Cr^4+:YAG microchip lasers

2001 ◽  
Vol 26 (12) ◽  
pp. 941 ◽  
Author(s):  
T. R. Schibli ◽  
T. Kremp ◽  
U. Morgner ◽  
F. X. Kärtner ◽  
R. Butendeich ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Mode Locking ◽  
Microchip Lasers ◽  
Continuous Wave Operation

Continuous Wave Operation of a Ka-Band Broadband High-Power Sheet Beam Traveling-Wave Tube

2021 ◽  
pp. 1-1
Author(s):  
Jianxun Wang ◽  
Yixin Wan ◽  
Xinjie Li ◽  
Qiang Liu ◽  
Hao Li ◽  
...  
Keyword(s):  
High Power ◽  
Traveling Wave ◽  
Continuous Wave ◽  
Traveling Wave Tube ◽  
Wave Tube ◽  
Ka Band ◽  
Continuous Wave Operation

Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate

2006 ◽  
Vol 89 (4) ◽  
pp. 041113 ◽  
Author(s):  
T. Kettler ◽  
L. Ya. Karachinsky ◽  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
G. Fiol ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Single Mode ◽  
Quantum Dot Lasers ◽  
Continuous Wave Operation

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

1999 ◽  
Vol 11 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
V.M. Ustinov ◽  
Yu.M. Shernyakov ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Diode Laser ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Long Wavelength ◽  
Continuous Wave Operation

1.42 [micro sign]m continuous-wave operation of GaInNAs laser diodes

2003 ◽  
Vol 39 (10) ◽  
pp. 777 ◽  
Author(s):  
D. Gollub ◽  
S. Moses ◽  
M. Fischer ◽  
A. Forchel
Keyword(s):  
Continuous Wave ◽  
Laser Diodes ◽  
Continuous Wave Operation

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

Stable continuous-wave mode-locked laser from a 1645 nm Er:YAG ceramic oscillator

2022 ◽  
Author(s):  
Yangyu Liu ◽  
Xue Cao ◽  
AnHua Xian ◽  
Guangmiao Liu ◽  
Wei zhou ◽  
...  
Keyword(s):  
Solid State ◽  
Pulse Width ◽  
Peak Power ◽  
Continuous Wave ◽  
Modulation Depth ◽  
Average Power ◽  
Mode Locking ◽  
Wave Mode ◽  
Semiconductor Saturable Absorber ◽  
Continuous Wave Mode

Abstract We demonstrate stable continuous-wave mode-locking (CWML) pulses around 1645nm by employing the home-made Er:YAG ceramic. By using a fiber laser and semiconductor saturable absorber mirror (SESAM) with modulation depth of 1.2%, we get ML pulses with the output average power up to 815 mW, the pulse width shortened as ~4 ps, and the peak power of 1.8 kW. With the SESAM of modulation depth of 2.4%, the second-order harmonic ML pulses were also obtained. As far as we know, this is the first report of CWML from Er3+-doped ceramics and also the shortest pulse duration in Er3+-doped solid-state oscillators.

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