Annealing Effects on the Properties of Electrodeposited CdSSe Thin Films

2011 ◽  
Vol 15 (1) ◽  
pp. 43-48
Author(s):  
T. Mahalingam ◽  
V. Dhanasekaran ◽  
S. Rajendran ◽  
G. Ravi ◽  
Luis Ixtlilco ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Complex Refractive Index ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Electron Microscopic ◽  
X Ray ◽  
Before And After ◽  
Annealing Effects ◽  
Scanning Electron

The effect of post heat treatment on structural, morphological and optical properties of electrodeposited CdSSe solid solution thin films were studied using X-ray diffractometer (XRD), scanning electron microscopy (SEM), and UV-Vis-NIR spectrophotometer, respectively. X-ray diffraction patterns revealed that polycrystalline nature with hexagonal structure of CdSSe thin films. Also the microstructural properties are calculated tends to increase and the face centred hexagonal orientation of CdSSe thin film is enhanced significantly by increasing the annealing temperature. Scanning electron microscopic images revealed that the hexagonal shaped grains are occupying the entire surface of the film. The optical transmittance and absorption spectra were recorded in the range 400 to1100 nm. The band gap of the CdSSe thin films was found to decrease from 2.0 eV to 1.8 eV due to annealing temperature. The real part of the complex refractive index (n) and the imaginary part extinction coefficient (k) were calculated before and after annealing.

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

FABRICATION AND CHARACTERIZATION OF AQUEOUS SOL–GEL-DERIVED LaFeO3 THIN FILMS

2000 ◽  
Vol 14 (22n23) ◽  
pp. 801-808 ◽  
Author(s):  
M. RAJENDRAN ◽  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Average Particle Size ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Correlation Spectroscopy ◽  
Average Particle ◽  
X Ray

A novel all-inorganic aqueous sol–gel process has been developed to fabricate LaFeO3 thin films by dip-coating. Stable, positively charged colloidal sol particles of hydrous lanthanum ferrite with an average particle size (Z av ) of 7 nm were prepared and coated onto quartz plates under controlled conditions. The sols have been characterized using photon correlation spectroscopy (PCS) for Z av and size distribution. The redispersible gel was characterized by thermogravimetric and differential thermal analysis (TG-DTA) and also by isothermal heating followed by X-ray diffraction to identify the reaction sequence to form LaFeO 3. The sol–gel films as deposited were X-ray amorphous on heating up to 500°C, partially crystalline at 600°C, fully crystalline and single phase at 650°C and above. These films were continuous, polycrystalline, single phase, had uniform thickness in the range between 180 to 1000 nm, depending on deposition conditions, and showed about 80% optical transmittance. The optical band gap varied from 2.7 to 3.3 eV as a function of the annealing temperature. The refractive index increased with increase in annealing temperature from 1.55 at 500°C to 1.86 at 800°C.

Structural and Morphological Properties of HfxZr1-xO2 Thin Films Prepared by Pechini Route

2010 ◽  
Vol 644 ◽  
pp. 113-116
Author(s):  
L.A. García-Cerda ◽  
Bertha A. Puente Urbina ◽  
M.A. Quevedo-López ◽  
B.E. Gnade ◽  
Leo A. Baldenegro-Perez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Precursor Solution ◽  
Dip Coating ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dip Coating Technique ◽  
Scanning Electron

In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm.

scholarly journals Study the effect by CO2 laser on some optical properties of (Cd) thin film doping by Ni

2008 ◽  
Vol 5 (3) ◽  
pp. 387-390
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Co2 Laser ◽  
Energy Gap ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Before And After ◽  
Cds Thin Films

In this research study the effect of irradiation by (CW) CO2 laser on some optical properties of (Cds) doping by Ni thin films of (1)µm thickness has been prepared by heat evaporation method. (X-Ray) diffraction technique showed the prepared films before and after irradiation are ploy crystalline hexagonal structure, optical properties were include recording of absorbance spectra for prepared films in the range of (400-1000) nm wave lengths, the absorption coefficient and the energy gap were calculated before and after irradiation, finally the irradiation affected (CdS) thin films by changing its color from the Transparent yellow to dark rough yellow and decrease the value absorption coefficient also increase the value of energy gap.

OPTICAL AND STRUCTURAL PROPERTIES OF PbCdS TERNARY THIN FILMS DEPOSITED BY CHEMICAL BATH DEPOSITION

2015 ◽  
Vol 11 (1) ◽  
pp. 2954-2959
Author(s):  
Isaac Nkrumah
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lead Acetate ◽  
Hexagonal Structure ◽  
Compact Layer ◽  
X Ray ◽  
Low Intensity ◽  
Different Dimensions ◽  
Diffraction Peaks ◽  
Scanning Electron

Thin films of PdCdS ternary compound have been successfully deposited using chemical baths containing cadmiumacetate, lead acetate thiourea and ammonia. The films were characterised using a variety of techniques. X-ray diffractionanalysis revealed that a number of prominent high intensity diffraction peaks originating from reflections of the tetragonallead sulphide structure. Several smaller low intensity peaks related to reflections of the hexagonal structure of cadmiumsulphide, were also observed. Scanning electron microscopy showed a compact layer with a surface composed of platelikeshaped nanocrystals of different dimensions with well defined boundaries. Energy dispersive X-ray spectroscopyconfirmed the presence of lead cadmium and sulphide. The band gap determined from optical absorption spectroscopywas found to be 1.9 eV.

scholarly journals Technology for Obtaining Cu2ZnSnSe4 Thin Films

2015 ◽  
Vol 2 ◽  
pp. 134 ◽  
Author(s):  
Pāvels Narica ◽  
Vjačeslavs Gerbreders ◽  
Velga Akmene ◽  
Irēna Mihailova
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Stoichiometric Ratio ◽  
Scanning Electron Microscope Analysis ◽  
X Ray ◽  
Sequential Deposition ◽  
Before And After ◽  
Copper Zinc ◽  
Electron Microscope Analysis ◽  
Scanning Electron

Cu2ZnSnSe4 thin films were obtained by sequential deposition of basic elements (Sn, Se, Zn, Cu) on a glass substrate. The thickness of each layer was selected to achieve 2:1:1:4 stoichiometric ratio for copper, zinc, tin and selenium, respectively. To obtain compound Cu2ZnSnSe4 samples were annealed at temperature range of 1500C to 4000C. Surface of samples were investigated using scanning electron microscope. Analysis of chemical composition and x-ray diffractometry was performed before and after annealing of samples.

Study on the Effect of Thickness on Structural and Optical Properties of Nanocrystalline Bismuth Ferrite (BiFeO3) Thin Films

2011 ◽  
Vol 410 ◽  
pp. 142-147 ◽  
Author(s):  
Soram Bobby Singh ◽  
Ng Boinis Singh ◽  
H. Basantakumar Sharma
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Bismuth Ferrite ◽  
Sol Gel ◽  
Optical Transmittance ◽  
Processing Technique ◽  
Hexagonal Structure ◽  
Structural And Optical Properties

Nanocrystalline Bismuth ferrite (BiFeO3) thin films of different thickness were deposited on glass substrates using sol-gel processing technique. The effect of thickness on structural and optical properties of BiFeO3thin films has been studied. The as-fired films were found to be amorphous that crystallized to hexagonal structure after annealing at 500°C for 2hr in air. The XRD pattern shows that the samples are polycrystalline in structure. At low annealing temperature (400°C), the thick film samples show amorphous in nature while thinner film shows some crystallinity with the presences of impurity phases. At high annealing temperature, all the samples show single phase distorted perovskite BiFeO3structure. The AFM photograph reveals that there is an increase in the grain size with the increase in film thickness. Optical transmittance spectra shows that, with the increase in film thickness, there is a decrease in transmittance (T%). Further, it is observed that increase in film thickness would lead to the decrease in optical energy band gap of the samples. The effect of thickness on the photoluminescent properties of BiFeO3films have also been studied for their possible application in nanoscale optoelectronic devices.

Annealing Effects on the Structural Properties of Gold Films on Si by the RF Magnetron Sputtering

2005 ◽  
Vol 475-479 ◽  
pp. 3923-3926 ◽  
Author(s):  
Kyung Chul Lee ◽  
Nam Ho Kim ◽  
B.H. O ◽  
Hyoun Woo Kim
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Gold Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Effects ◽  
Au Thin Films ◽  
Scanning Electron

We have investigated the effect of annealing temperature on the structural property of Au thin films deposited on Si(100) substrate using the radio frequency (RF) magnetron sputtering technique. X-ray diffraction revealed that the relative intensities and FWHM of (111), (200), and (311) peaks increased and decreased, respectively, after thermal annealing at 600°C. Scanning electron microscopy indicated that after annealing at 600-700°C, Au structures agglomerated on Si(100) surfaces. Energy dispersive x-ray spectrometry (EDX) revealed that the agglomerated structure was composed of pure Au.

scholarly journals Structural and Electrical Properties Dependence on Annealing Temperature of Bi Thin Films

2014 ◽  
Vol 11 (3) ◽  
pp. 1257-1260
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
P Type

In this work the effect of annealing temperature on the structure and the electrical properties of Bi thin films was studied, the Bi films were deposited on glass substrates at room temperature by thermal evaporation technique with thickness (0.4 µm) and rate of deposition equal to 6.66Å/sec, all samples are annealed in a vacuum for one hour. The X-ray diffraction analysis shows that the prepared samples are polycrystalline and it exhibits hexagonal structure. The electrical properties of these films were studied with different annealing temperatures, the d.c conductivity for films decreases from 16.42 ? 10-2 at 343K to 10.11?10-2 (?.cm)-1 at 363K. The electrical activation energies Ea1 and Ea2 increase from 0.031 to 0.049eV and from 0.096 to 0. 162 eV with increasing of annealing temperature from 343K to 363K, respectively. Hall measurements showed that all the films are p-type.

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