ELLIPSOMETRIC METHOD OF SUBSTRATE TEMPERATURE MEASUREMENT IN LOW-TEMPERATURE PROCESSES OF EPITAXY OF INSB LAYERS

2019 ◽  
Keyword(s):  
Low Temperature ◽  
Substrate Temperature ◽  
Temperature Measurement ◽  
Ellipsometric Method

Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers

2019 ◽  
Vol 55 (1) ◽  
pp. 8-15
Author(s):  
V. A. Shvets ◽  
I. A. Azarov ◽  
S. V. Rykhlitskii ◽  
A. I. Toropov
Keyword(s):  
Low Temperature ◽  
Substrate Temperature ◽  
Temperature Measurement ◽  
Ellipsometric Method

A temperature sensor based on flexible substrate with ultra-high sensitivity for low temperature measurement

2020 ◽  
Vol 315 ◽  
pp. 112341
Author(s):  
Zhaojun Liu ◽  
Bian Tian ◽  
Xu Fan ◽  
Jiangjiang Liu ◽  
Zhongkai Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Measurement ◽  
Temperature Sensor ◽  
Flexible Substrate ◽  
High Sensitivity

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

A substrate temperature measurement system for use during rf diode sputtering

1989 ◽  
Vol 60 (4) ◽  
pp. 749-751 ◽  
Author(s):  
J. E. Snyder ◽  
M. H. Kryder
Keyword(s):  
Substrate Temperature ◽  
Temperature Measurement ◽  
Measurement System ◽  
Temperature Measurement System

A wide‐range superconductor thermal sensor for low‐temperature measurement

1991 ◽  
Vol 62 (11) ◽  
pp. 2792-2794 ◽  
Author(s):  
M. V. S. Lakshmi ◽  
K. Ramkumar ◽  
M. Satyam
Keyword(s):  
Low Temperature ◽  
Temperature Measurement ◽  
Thermal Sensor ◽  
Wide Range

scholarly journals Low-Temperature Chemical Vapor Deposition Growth of MoS2 Nanodots and Their Raman and Photoluminescence Profiles

2021 ◽  
Vol 3 ◽  
Author(s):  
Larionette P. L. Mawlong ◽  
Ravi K. Biroju ◽  
P. K. Giri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Chemical Vapor Deposition Growth ◽  
Raman Modes

We report on the growth of an ordered array of MoS2 nanodots (lateral sizes in the range of ∼100–250 nm) by a thermal chemical vapor deposition (CVD) method directly onto SiO2 substrates at a relatively low substrate temperature (510–560°C). The temperature-dependent growth and evolution of MoS2 nanodots and the local environment of sulfur-induced structural defects and impurities were systematically investigated by field emission scanning electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) techniques. At the substrate temperature of 560°C, we observed mostly few-layer MoS2, and at 510°C, multilayer MoS2 growth, as confirmed from the Raman line shape analysis. With reduced substrate temperature, the density of MoS2 nanodots decreases, and layer thickness increases. Raman studies show characteristic Raman modes of the crystalline MoS2 layer, along with two new Raman modes centered at ∼346 and ∼361 cm−1, which are associated with MoO2 and MoO3 phases, respectively. Room temperature photoluminescence (PL) studies revealed strong visible PL from MoS2 layers, which is strongly blue-shifted from the bulk MoS2 flakes. The strong visible emission centered at ∼ 658 nm signifies a free excitonic transition in the direct gap of single-layer MoS2. Position-dependent PL profiles show excellent uniformity of the MoS2 layers for samples grown at 540 and 560°C. These results are significant for the low-temperature CVD growth of a few-layer MoS2 dots with direct bandgap photoluminescence on a flexible substrate.

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

Low Temperature Measurement of the Electrical Conductivity in Amorphous InGaZnO Thin Films

2013 ◽  
Vol 3 (2) ◽  
pp. P10-P12 ◽  
Author(s):  
Hasung Sim ◽  
Seongil Choi ◽  
Je-Geun Park ◽  
Jaewon Song ◽  
Seungwu Han ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Temperature Measurement ◽  
Amorphous Ingazno
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