Plastic deformation in icosahedral Al–Pd–Mn alloys

1994 ◽  
Vol 9 (2) ◽  
pp. 343-347 ◽  
Author(s):  
J.E. Shield ◽  
M.J. Kramer ◽  
R.W. McCallum

The deformation characteristics of icosahedral Al70Pd21.5Mn8.5 have been investigated by high temperature creep experiments, and the resultant microstructures have been examined by transmission electron microscopy (TEM). From 730 to 780 °C, microstructural analysis revealed that the deformation is controlled by dislocation glide, with an activation energy of 210 ± 30 kJ/mole and a stress exponent of 1.2 ± 0.2. From 780 to 810 °C, microstructures were characteristic of deformation controlled by dislocation glide and climb. The activation energy and stress exponent were determined to be 1700 ± 80 kJ/mole and 2.9 ± 0.3, respectively. Hardness measurements also reflected an increase in dislocation density, as the hardness of the deformed samples was approximately 10% higher than the as-cast sample.

1992 ◽  
Vol 7 (9) ◽  
pp. 2360-2364 ◽  
Author(s):  
J.L. Routbort ◽  
K.C. Goretta ◽  
D.J. Miller ◽  
D.B. Kazelas ◽  
C. Clauss ◽  
...  

Dense polycrystalline Bi2Sr1.7CaCu2Ox (2212) was deformed from 780–835 °C in oxygen partial pressures, Po2, of 103 to 2 × 104 Pa. Results could be divided into two stress regimes: one at lower stress in which the steady-state creep rate, ∊, was proportional to stress, γ, having an activation energy of 990 ± 190 kJ/mole and being independent of PO2, and another at higher stress in which ∊ was proportional to σn, with n ≍ 5–6. Transmission electron microscopy supported the interpretation that in the lower-stress viscous regime, creep was controlled by diffusion, whereas dislocation glide and microcracking were responsible for strain accommodation at higher stresses.


1993 ◽  
Vol 8 (6) ◽  
pp. 1199-1202 ◽  
Author(s):  
J.E. Shield ◽  
M.J. Kramer ◽  
R.W. McCallum

Al—Cu—Fe quasicrystalline alloys have been deformed by high-temperature creep between 680 and 740 °C. Deformations greater than 30% were achieved without cracking. Analysis of the data in the quasi-steady state regime reveals power law behavior with a stress exponent of 2.5. The activation energy for deformation was determined to be 640 ± 20 kJ/mole in the temperature region investigated. Transmission electron microscopy revealed lamellar defects which appear similar to twins.


Author(s):  
C. M. Jantzen ◽  
D. G. Howitt

The mullite-SiO2 liquidus has been extensively studied, and it has been shown that the flattening of the liquidus is related to the existence of a metastable region of liquid immiscibility at sub-liquidus temperatures which is detectable by transmission electron microscopy (TEM) (Fig. 1).


1990 ◽  
Vol 201 ◽  
Author(s):  
R. Jebasinski ◽  
S. Mantl ◽  
K. Radermacher ◽  
P. Fichtner ◽  
W. Jăger ◽  
...  

AbstractThe coarsening of CoSi2 precipitates and the microstructural evolution of (111) Si implanted with 200 keV Co+ ions at 350°C and fluences of 1×1016cm−2 and 6×1016cm−2 were investigated as a function of depth, annealing temperature and annealing time using Rutherford Backscattering Spectroscopy (RBS) and Transmission Electron Microscopy (TEM). After annealing cross-section TEM micrographs show a layered array of platelet-shaped precipitates with preferred facets on {111} planes. The fraction of Co-atoms, that were redistributed during the different annealing temperatures and times, has been used to determine an activation energy for the precipitate coarsening. By applying the Meechan-Brinkman and the change-of-slope methods, we obtained activation energies in the range of 3.2 – 3.6 eV.


1991 ◽  
Vol 238 ◽  
Author(s):  
M. Albrecht ◽  
H. P. Strunk ◽  
P. O. Hansson ◽  
E. Bauser

ABSTRACTThe initial stages of heteroepitaxial growth of Ge0.85 Si0.15 on Si(001) grown from Bi solution (liquid phase epitaxy) are studid by transmission electron microscopy. Stranski-Krastanov growth is observed to take place. After growth of a pseudomorphic Ge0.85 Si0.15 layer of 4 monolayer thickness, islands form and grow pseudomorphically up to a thickness of 30 nm. Then first misfit dislocations form. The formation process of these dislocations is analyzed and discussed in terms of half loop nucleation at the surface and dislocation glide. Evidence for glide on (110) planes is put forward.


2013 ◽  
Vol 212 ◽  
pp. 25-28 ◽  
Author(s):  
Kinga B. Rodak ◽  
Adam Hernas

The detailed microstructural analysis of HCM12 steel after long time (100 000 hours) exposure at service temperatures around 600°C was investigated by means of scanning transmission electron microscopy. The results show, that the recovery processes of the martensite lath structure and δ ferrite are significantly different. Moreover are differences in particles precipitating at the martensite and δ ferrite. The intensive process intragranular M23C6 and Laves particles precipitating is observed at the martensite/ δ ferrite interfaces.


2001 ◽  
Vol 16 (7) ◽  
pp. 1960-1966 ◽  
Author(s):  
K. Miyazawa ◽  
H. Satsuki ◽  
M. Kuwabara ◽  
M. Akaishi

The structure and hardness of C60 bulk specimens compressed under 5.5 GPa at room temperature to 600 °C are investigated by high-resolution transmission electron microscopy, x-ray diffraction, and micro-Vickers hardness tests. A strong accumulation of the [1 1 0]tr orientation of high-pressure-treated C60 specimens was developed along the compression axis, and stacking faults and nano-sized deformation twins were introduced into the C60 specimens compressed at 450–600 °C. Curved lattice planes indicating a polymerization of C60 were observed by high resolution transmission electron microscopy (HRTEM). The polymerization of the high-pressure-compressed C60 is also supported by the computer simulation of HRTEM images.


2011 ◽  
Vol 278 ◽  
pp. 7-12 ◽  
Author(s):  
Fabienne Touratier ◽  
Bernard Viguier ◽  
Christophe Siret ◽  
Sandrine Lesterlin ◽  
Eric Andrieu

The creep behaviour of MC2 single crystal superalloy has been studied at 1150°C/80 MPa, with an applied load along [001] axis. The resulting dislocation microstructures were examined by transmission electron microscopy. The occurrence of a[010] type dislocations (with a zero Schmid factor) within the ordered γ' precipitates is often observed. It is shown that those dislocations moved by a climb process, based on a mechanism involving two dislocation systems and vacancy exchanges, as proposed in the literature. We calculate the vacancy fluxes associated with such a mechanism and show that the vacancy transportation can be easily insured by a simple diffusion process. This calculation shows that the diffusion and climbing steps do not seem to be the creep rate controlling mechanisms for those situations in MC2 alloy.


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