scholarly journals MAGNETRON SPUTTERED NANOCRYSTALLINE TiN THIN FILMS AND CORROSION PROPERTIES

2020 ◽  
Vol 17 (35) ◽  
pp. 164-173
Author(s):  
Muslim Idan HAMIL ◽  
Mohammed K. KHALAF ◽  
Mundher AL-SHAKBAN
Keyword(s):  
Thin Films ◽  
Corrosion Current ◽  
X Ray Diffraction ◽  
Corrosion Properties ◽  
Uncoated Sample ◽  
Tin Films ◽  
Before And After ◽  
Tin Thin Films ◽  
Cohesion Degree ◽  
Thermally Treated

In this report, TiN nanocrystalline thin films were deposited on glass and Ti-6Al-4V substrates using a DC-magnetron sputtering technique. The TiN films were sputtered using a pure Ti target (99.9%) with 40W of power in Ar/N2 gas mixture atmosphere. The structure of the TiN films was characterized by X-Ray diffraction, as prepared films exhibited a (200) preferred orientation, while film annealed at 500 °C shows the (111), (200) and (311). Polycrystalline, cubic, (111)-orientated TiN films were produced by annealing temperature of 500 °C. The effect of deposited temperature on the microstructural morphologies of the thin films was studied by Field Emission Scanning Electron Microscope (FESEM). The particle size of the sputtered TiN films ranged from 50 to 70 nm and was strongly influenced by annealing temperatures, the morphology of the films deposited before and after annealing has a characteristic agglomeration of particles. Potentiodynamic polarization analysis of the TiN films confirms the inverse relationship between polarization resistance and corrosion current. The biocorrosion measurements for TiN films deposited on the Ti-6Al-4V substrate in 3.5% NaCl solution have also been obtained. Clear improvement in the corrosion resistance was observed rather than for untreated, especially for thermally annealed (500 oC) TiN/Ti-6Al-4V samples. The corrosion rate was 0.1458 mm/y for the uncoated sample, while 2.68510-4 mm/y for TiN/Ti-6Al-4V in samples after annealing. The average corrosion potential calculated was - 0.117 V. The results confirmed that coated alloys with 500 °C thermally treated exhibited a better electrochemical behavior compare with uncoated and non-thermally treated alloys possibly due to the better cohesion degree of the coatings.

The Influence of N2 Partial Pressure on Color, Mechanical, and Corrosion Properties of TiN Thin Films Deposited by DC Reactive Magnetron Sputtering

2015 ◽  
Vol 659 ◽  
pp. 550-554
Author(s):  
Pisitpat Nimnual ◽  
Aparporn Sakulkalavek ◽  
Rachsak Sakdanuphab
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Corrosion Properties ◽  
Tin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Tin Thin Films ◽  
Mechanical And Corrosion Properties

Multi-functional thin films have gained increasing importance in a decorative application. Among the available material, titanium nitride (TiN) thin film is interesting due to its golden color and mechanical resistance. Beside their properties, the corrosion property of TiN films is mainly considered in order to extend the life time. In this work, the TiN thin films were deposited on 3x3 cm2 Si(100) substrates by dc reactive magnetron sputtering technique. The effects of N2 partial pressure (PN2) on deposited film properties such as microstructure, surface morphology, color, mechanical and corrosion properties were investigated. We found that the crystal structure of the TiN films exhibit the (200) preferred orientation. The color of TiN films change from gold-yellow to gold-red colors by increasing of N2 partial pressure that could be explained by Drude model. The TiN films have smoother surface when the N2 partial pressure increases. Standard corrosion tests in artificial sweat solution show the corrosion current density (icorr) in the range between 0.25 to 4.25 mA/cm2 and the polarization resistance increases with increasing of N2 partial pressure. The highest hardness of the film is approximately 40 GPa with elastic modulus of 340 GPa. We conclude that N2 partial pressure corelates with color, mechanical property and corrosion resistance of TiN films, which were optimized to use in decorative application.

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

Change of the critical thickness in the preferred orientation of TiN films

1995 ◽  
Vol 10 (3) ◽  
pp. 634-639 ◽  
Author(s):  
U.C. Oh ◽  
Jung Ho Je ◽  
Jeong Y. Lee
Keyword(s):  
Strain Energy ◽  
Unit Volume ◽  
Critical Thickness ◽  
Preferred Orientation ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Cross Sectional ◽  
Tin Films ◽  
Tin Thin Films

Recently it was observed through cross-sectional TEM that the preferred orientation of the TiN thin film was changed from (200) to (111) with thickness. In this study, the process of the change in the preferred orientation was studied near the critical thickness by x-ray diffraction, and the value of the critical thickness could be estimated. The change of the critical thickness was also investigated with the strain energy per unit volume. The strain energy could be changed by controlling the energy of the bombarding particle, i.e., by adjusting the rf power, the working pressure, and the substrate bias in sputtering. The critical thickness was decreased monotonically in all cases as the energy of the bombarding particle or the strain energy per unit volume was increased. These results surely show the dependence of the change of the preferred orientation on the strain energy in the TiN thin films.

The Texture Effect on Diffusion Barrier Property on TiN Films between Copper and Si Wafer

2005 ◽  
Vol 495-497 ◽  
pp. 1371-1376
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
No Jin Park ◽  
Bee Lyong Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Thin Films ◽  
Metal Organic ◽  
Better Than

TiN thin films are widely used as a coating material due to their good mechanical and conductivity properties, high thermal properties, strong erosion and corrosion resistance. Also TiN has been used in Si devices as a diffusion barrier material for Al and Cu-based metallization. The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layer. In this study, the relationship between the texture and microstructure and the best diffusion barrier propertiy of TiN coated films (by PVD and MOCVD) on semiconductor devices (Cu/TiN/SiO2/Si layer) were investigated under different processing conditions and textures. The property of diffusion barrier for Cu of physical vapor deposited TiN thin films is better than that of metal organic chemical vapor deposited TiN thin films. Also the property of diffusion barrier for Cu of (111) textured TiN thin films is better than that of (200) textured TiN thin films.

scholarly journals Optical Properties and Microstructure of TiNxOy and TiN Thin Films before and after Annealing at Different Conditions

Coatings ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 22 ◽  
Author(s):  
Hanan A. Abd El-Fattah ◽  
Iman S. El-Mahallawi ◽  
Mostafa H. Shazly ◽  
Waleed A. Khalifa
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pure Titanium ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Optical Absorbance ◽  
Atomic Force ◽  
Before And After ◽  
Tin Thin Films ◽  
Steel Substrates

TiN and TiNxOy thin films share many properties such as electrical and optical properties. In this work, a comparison is conducted between TiN (with and without annealing at 400 °C in air and vacuum) and TiNxOy thin films deposited by using RF magnetron sputtering with the same pure titanium target, Argon (Ar) flow rate, nitrogen flow rates, and deposition time on stainless steel substrates. In the case of TiNxOy thin film, oxygen was pumped in addition. The optical properties of the thin films were characterized by spectrophotometer, and Fourier transform infrared spectroscopy (FTIR). The morphology, topography, and structure were studied by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray diffraction (XRD). The results show that both thin films have metal-like behavior with some similarities in phases, structure, and microstructure and differences in optical absorbance. It is shown that the absorbance of TiN (after vacuum-annealing) and TiNxOy have close absorbance percentages at the visible range of light with an unstable profile, while after air-annealing the optical absorbance of TiN exceeds that of TiNxOy. This work introduces annealed TiN thin films as a candidate solar selective absorber at high-temperature applications alternatively to TiNxOy.

Study by X-ray photoelectron spectroscopy and X-ray diffraction of the growth of TiN thin films obtained by nitridation of Ti layers

1996 ◽  
Vol 290-291 ◽  
pp. 376-380 ◽  
Author(s):  
S. Santucci ◽  
L. Lozzi ◽  
M. Passacantando ◽  
P. Picozzi ◽  
R. Alfonsetti ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tin Thin Films

Effects of γ-Ray Irradiation on Structure and Properties of ZnO:Al Thin Film

2007 ◽  
Vol 546-549 ◽  
pp. 2137-2142 ◽  
Author(s):  
Wen Wen Wang ◽  
Tian Min Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Performance ◽  
Hall Effect Measurement ◽  
High Rate ◽  
X Ray Diffraction ◽  
Vacancy Defects ◽  
Structure Morphology ◽  
Before And After ◽  
Γ Ray

ZnO:Al(ZAO) thin film is a kind of transparent conductive functional material which has a potential application in the solar cell and Atom Oxygen resisting systems of spacecrafts. High performance ZAO thin films were prepared by reactive magnetron sputtering and then irradiated by γ-ray with different dose or rate of irradiation. The as-deposited sample and irradiated ones were characterized by X-ray Diffraction, Scanning Electron Microscopy and Hall-effect measurement to investigate the dependences of the structure, morphology and electrical properties of ZAO on the dose and rate of γ-ray irradiation. Measurement of Positron Annihilation Doppler-Broadening Spectroscopy was carried out to study the variation of the defects in ZAO thin films before and after irradiation. It is indicated that γ-ray will excite the carriers, which are electrons in ZAO. A high rate of γ-ray irradiation could slightly destroy the bonds of Zn-O and decrease the crystallinity, while the effect of low rate irradiation is similar to heat annealing and increase the crystallinity of ZAO thin films. γ-ray has no apparent influences on the negative vacancy defects in ZAO thin film.

Enhancement of Ferroelectricity and Magnetoelectric Effect of BiFeO3 Thin Films on Membrane Structure

2006 ◽  
Vol 966 ◽  
Author(s):  
Seiji Nakashima ◽  
Kwi-Young Yun ◽  
Yoshitaka Nakamura ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Membrane Structure ◽  
Remanent Polarization ◽  
Hysteresis Loops ◽  
X Ray Diffraction ◽  
Multiferroic Bifeo ◽  
Before And After ◽  
Diffraction Peaks ◽  
Ferroelectric Hysteresis

ABSTRACTMultiferroic BiFeO3 thin films have been prepared on Pt/TiO2/SiO2/thick (200 μm) and membrane (15 μm) Si substrate by pulsed laser deposition (PLD) to confirm the influence of stress from substrate. Si membrane was obtained by etching using reactive ion etching (RIE) until thickness is to be 15 μm. The X-ray diffraction peaks of BiFeO3 thin film on Pt/TiO2/SiO2/Si (15 μm) membrane substrate slightly shift to lower angles, compared to those on Pt/TiO2/SiO2/Si (200 μm) substrate. Ferroelectric hysteresis loops were also measured at 150 K before and after Si etching by RIE. The BiFeO3 thin film on the Pt/TiO2/SiO2/Si (15 μm) membrane structure shows remanent polarization (Pr) of 95 μC/cm2 for a maximum applied voltage of 18 V, which is larger than Pr = 71 μC/cm2 of BiFeO3 thin film on Pt/TiO2/SiO2/Si (200 μm) substrate at the same measurement conditions. Under magnetic field of 1.1 T, remanent polarization (Pr) of BiFeO3 thin film on Pt/TiO2/SiO2/Si (15 μm) membrane structure increased from 95 μC/cm2 to 101 μC/cm2 at 150 K due to stress relaxation of BiFeO3 thin film.

X-ray diffraction and X-ray photoelectron spectroscopy characterization of sulfurized tin thin films deposited by thermal evaporation

2018 ◽  
Vol 645 ◽  
pp. 409-416
Author(s):  
Hiroto Oomae ◽  
Takahito Eguchi ◽  
Kunihiko Tanaka ◽  
Misao Yamane ◽  
Naofumi Ohtsu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tin Thin Films

scholarly journals Microstructure, Stress and Texture in Sputter Deposited TiN Thin Films: Effect of Substrate Bias

2014 ◽  
Vol 996 ◽  
pp. 855-859 ◽  
Author(s):  
Jay Chakraborty ◽  
Tias Maity ◽  
Kishor Kumar ◽  
S. Mukherjee
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Profile Analysis ◽  
Lattice Parameter ◽  
Line Profile Analysis ◽  
Substrate Bias ◽  
X Ray Diffraction ◽  
Strain Anisotropy ◽  
X Ray ◽  
Tin Thin Films

Titanium nitride thin films deposited by reactive dc magnetron sputtering under various substrate bias voltages have been investigated by X-ray diffraction. TiN thin films exhibits lattice parameter anisotropy for all bias voltages. Preferential entrapment of argon atoms in TiN lattice has been identified as the major cause of lattice parameter anisotropy. Bombardment of argon ions during film growth has produced stacking faults on {111} planes of TiN crystal. Stacking fault probability increases with increasing substrate bias voltages. X-ray diffraction line profile analysis indicates strain anisotropy in TiN thin films. Diffraction stress analysis by d-sin2ψ method reveals pronounced curvature in the plot of inter-planar spacing (d) (or corresponding lattice parameter (a)) versus sin2ψ. Direction dependent elastic grain interaction has been considered as possible source of the observed anisotropic line broadening.

Sign in / Sign up

Export Citation Format

Share Document