Epitaxial growth of gadolinium oxide on roll-textured nickel using a solution growth technique

2000 ◽  
Vol 15 (3) ◽  
pp. 621-628 ◽  
Author(s):  
Jonathan S. Morrell ◽  
Ziling B. Xue ◽  
Eliot D. Specht ◽  
Amit Goyal ◽  
Patrick M. Martin ◽  
...  
Keyword(s):  
Single Layer ◽  
Dip Coating ◽  
Base Layer ◽  
Coating Films ◽  
Growth Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Nickel Substrates ◽  
High Degree

Chemical solution epitaxy was used to deposit an epitaxial film of Gd2O3 on roll-textured nickel. A 2-methoxyethanol solution of gadolinium methoxyethoxide was used for spin-coating and dip-coating. Films were crystallized using a heat treatment at 1160 °C for 1 h in 4% H2/96% Ar. Single-layer films were approximately 600 Å in thickness, and thicker films could be produced using multiple coatings. θ/2θ x-ray diffractograms revealed only (0041) reflections, indicating a high degree of out-of-plane texture. A pole-figure about the Gd2O3 (222) reflection indicated a single in-plane epitaxy. Scanning electron microscopy showed that the films were smooth, continuous, and free of pin holes. Atomic force microscopy revealed an average surface roughness of 53 Å. Electron diffraction indicated that the misalignment of the majority of the grains in the plane was less than 10°. High-current (0.4 MA/cm2) Yba2Cu3O7–δ films were grown on roll-textured nickel substrates using Gd2O3 as the base layer in a three-layer buffer structure.

Interfacial Sliding in Back-End Interconnect Structures in Microelectronic Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.A. Peterson ◽  
C. Park ◽  
I. Dutta
Keyword(s):  
Dielectric Material ◽  
Single Layer ◽  
Component Reliability ◽  
Force Microscopy ◽  
Interfacial Sliding ◽  
Microelectronic Devices ◽  
Atomic Force ◽  
Layer Structures ◽  
Out Of Plane ◽  
Plane Step

AbstractDeformation of interconnect structures at the back-end of microelectronic devices during processing or service can have a pronounced effect on component reliability. Here, we use atomic force microscopy (AFM) to study plastic deformation and interfacial sliding of Cu interconnects lines on Si. The behavior of both stand-alone Cu lines and lines embedded in a low K dielectric was studied. Following thermal cycling, changes were observed in the in-plane Cu line dimensions, as well as the out-of plane step height between Cu and dielectric in single layer structures. These were attributed to differential deformation of the Cu/Si and Cu/dielectric material pairs due to thermal expansion mismatch, accommodated by interfacial creep. These results are discussed in light of previous work on the mechanism of interfacial creep. Some preliminary results on the distortion of Cu lines due to package-level stresses are also presented.

scholarly journals Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

2015 ◽  
Vol 6 ◽  
pp. 901-906 ◽  
Author(s):  
Mykola Telychko ◽  
Jan Berger ◽  
Zsolt Majzik ◽  
Pavel Jelínek ◽  
Martin Švec
Keyword(s):  
Electron Scattering ◽  
Room Temperature ◽  
Single Layer ◽  
Tunneling Current ◽  
Single Layer Graphene ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scattering Effects ◽  
Out Of Plane ◽  
Theoretical Simulations

We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms.

Single-layer submicron-thick BaTiO3 coatings from poly(vinylpyrrolidone)-containing sols: Gel-to-ceramic film conversion, densification, and dielectric properties

2001 ◽  
Vol 16 (11) ◽  
pp. 3116-3123 ◽  
Author(s):  
Hiromitsu Kozuka ◽  
Atsushi Higuchi
Keyword(s):  
Heat Treatment ◽  
Condensation Reaction ◽  
Single Layer ◽  
Dip Coating ◽  
Single Step ◽  
Dielectric Constants ◽  
Isothermal Heat Treatment ◽  
Coating Films ◽  
Ceramic Film ◽  
C Decomposition

BaTiO3-coating films were prepared from a solution containing poly(vinylpyrrolidone) (PVP) of molar composition Ba(CH3COO)2:Ti(OC2H5)4:PVP:CH3COOH:H2O: C2H5OH = 1:1:0.5:27:4:5, via nonrepetitive, single-step dip-coating. The gel films were found to be converted into BaTiO3 films via evaporation of the solvent and CH3COOH below 210 °C, decomposition of PVP at 210–360 °C, decomposition of CH3COO− below 440 °C, and crystallization at 500–610 °C. The decomposition of PVP was accompanied by the progress of the condensation reaction, which resulted in significant reduction in film thickness. When the gel films were heated isothermally at 700 °C, crack-free BaTiO3 films as thick as 0.9 μm were obtained. When the gel films were heated isothermally at 360 °C and then at 700 °C, the film became denser. Higher dielectric constants around 290 were found for the film that underwent the isothermal heat treatment at 360 °C. A slower rate of PVP decomposition was thought to be the key for the film densification.

Strain-Engineered Rippling and Manipulation of Single-Layer WS2 by Atomic Force Microscopy

2021 ◽  
Vol 125 (16) ◽  
pp. 8696-8703
Author(s):  
Fei Pang ◽  
Feiyue Cao ◽  
Le Lei ◽  
Lan Meng ◽  
Shili Ye ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Single Layer ◽  
Force Microscopy ◽  
Atomic Force

Sol-Gel Derived Titaniajormosil Composite Thin Films For Optical Waveguide Applications

1999 ◽  
Vol 576 ◽  
Author(s):  
Wenxiu Que ◽  
Y. Zhou ◽  
Y. L. Lam ◽  
Y. C. Chan ◽  
S. D. Cheng ◽  
...  
Keyword(s):  
Sol Gel ◽  
Single Layer ◽  
Titanium Content ◽  
Gravimetric Analysis ◽  
Force Microscopy ◽  
Free Film ◽  
Free Silica ◽  
Atomic Force ◽  
Bonding Properties ◽  
Single Layer Film

ABSTRACTWe report the preparation of sol-gel waveguide films based on a newly developed recipe to incorporate organic molecules into the inorganic sol-gel glass matrix. The film was derived from a sol that has a higher titanium content in an organically modified silane (ORMOSIL), namely, ÿ-Glycidoxypropyltrimethoxysilane. We have shown that using spin-coating and low temperature baking, a single coating layer can have a thickness of more than 1.5 μm. When such a single layer film is deposited on a microscope glass slide or a piece of silicon with a buffercladding layer, it is able to support the guiding of optical waves. We have characterized the film using scanning electron microscopy, atomic force microscopy, X-ray diffractometry, thermal gravimetric analysis. differential thermal analysis and Fourier transform infrared spectroscopy and have studied the properties of the waveguide film, including the microstructural properties. the chemical bonding properties, and the optical properties. Based on these experimental results, we found that a heat-treatment at a temperature slightly below 200°C is necessary to attain a dense pore-free film. It has also been noted that a purely inorganic and crack-free silica-titania film can be obtained after baking the titania-ORMOSIL composite film at 500°C or higher.

scholarly journals The effect of replacing iron atoms instead of zinc of the quaternary compound CZTS

2021 ◽  
Vol 2114 (1) ◽  
pp. 012033
Author(s):  
Abubaker.S. Mohammed
Keyword(s):  
Full Width Half Maximum ◽  
Energy Gap ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Quaternary Compound ◽  
Force Microscopy ◽  
Atomic Force ◽  
Coating Method ◽  
Degree Of Crystallization ◽  
High Degree

Abstract In this article, the quaternary compound Cu2MSnS4 was prepared in a simple and inexpensive approach, where M is the iron (Fe) and zinc (Zn) atoms by the spin coating method on a glass substrate at room temperature (RT), as a result of replacing Zn atoms by Fe. Quaternary Cu2ZnSnS4 (CZTS) and Cu2FeSrS4 (CFTS) structural and optical properties have been studied successfully. The material has been identified by X-ray diffraction, and it was discovered that CZTS has a polycrystalline Tetragonal (kesterite) structure, whereas CFTS has a Tetragonal (stannite) structure. A reduction in the full width half maximum (FWHM) of the preferred plane implies a high degree of crystallization. The structural properties of the film surface, such as grain size and roughness, were studied by Atomic force microscopy (AFM). The results explain an increase in nanoparticle size and surface roughness when Fe is substituted by Zn in the CZTS structure. The absorption coefficient values of all designed compounds in visible regions are greater than 104/cm, and the results show that the absorbance coefficient increases with Fe add. The CZTS films showed an energy gap of 1.88 eV, and this value became 1.69 eV with substituted Fe instead of Zn.

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

Characteristics of Electron Transport Study of Composited Graphene-Zinc Oxide Thin Film Photoanode for Dye-Sensitized Solar Cells

2020 ◽  
Vol 307 ◽  
pp. 185-191
Author(s):  
Noor Syafiqah Samsi ◽  
N.A.S. Affendi ◽  
M.K. Yaakob ◽  
M.F.M. Taib ◽  
A. Lepit ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Dye Sensitized Solar Cells ◽  
Xrd Analysis ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Zno Nanosheets ◽  
High Degree ◽  
Sensitized Solar Cells

Graphene-Zinc Oxide (Gr-ZnO) nanocomposites films were successfully synthesized via facile electrodeposition method in an aqueous solution under Gr concentration conditions. Gr, as a highly conductive carbon, acts as an anchor for ZnO nanosheets and plays a substantial role in controlling the degree of dispersion of ZnO nanosheets onto indium-doped tin oxide (ITO) substrate to form Gr-ZnO nanocomposite. Atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) analysis of Gr-ZnO nanocomposite samples confirmed that the presence of ZnO nanosheets with a high degree of dispersity and crystallinity which is well linked to the thin layer of Gr nanoparticle on ITO substrate. The surface roughness of the films found increased to ~270 nm on Gr-ZnO as compared to Gr ~44 nm and ZnO ~3 nm. Further, the x-ray diffraction spectroscopy (XRD) analysis showed the result is in good agreement with Raman spectroscopy study. The cyclic voltammetry (CV) of Gr-ZnO nanocomposite revealed that the effect of electron-hole recombination process was increased and the presence of Gr in ZnO photoanode provides the fastest redox reaction and hence offers the fastest electron transfer in photoanode.

scholarly journals The effect of moiré superstructures on topological edge states in twisted bismuthene homojunctions

2020 ◽  
Vol 6 (23) ◽  
pp. eaba2773 ◽  
Author(s):  
Jian Gou ◽  
Longjuan Kong ◽  
Xiaoyue He ◽  
Yu Li Huang ◽  
Jiatao Sun ◽  
...  
Keyword(s):  
Single Layer ◽  
Scanning Tunneling ◽  
Edge States ◽  
First Principles Calculations ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Spatially Distributed ◽  
Topological States ◽  
Device Applications

Creating and controlling the topological properties of two-dimensional topological insulators is essential for spintronic device applications. Here, we report the successful growth of bismuth homostructure consisting of monolayer bismuthene and single-layer black phosphorus–like Bi (BP-Bi) on the HOPG surface. Combining scanning tunneling microscopy/spectroscopy with noncontact atomic force microscopy, moiré superstructures with twist angles in the bismuth homostructure and the modulation of topological edge states of bismuthene were observed and studied. First-principles calculations reproduced the moiré superlattice and indicated that the structure fluctuation is ascribed to the stacking modes between bismuthene and BP-Bi, which induce spatially distributed interface interactions in the bismuth homostructure. The modulation of topological edge states is directly related to the variation of interlayer interactions. Our results suggest a promising pathway to tailor the topological states through interfacial interactions.

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