Effect of oxygen on the thermomechanical behavior of passivated Cu thin films

2003 ◽  
Vol 18 (9) ◽  
pp. 2122-2134 ◽  
Author(s):  
Jonathan B. Shu ◽  
Susan B. Clyburn ◽  
Thomas E. Mates ◽  
Shefford P. Baker
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Secondary Ion Mass Spectrometry ◽  
Thermomechanical Behavior ◽  
Silicon Substrates ◽  
Dislocation Glide ◽  
Before And After ◽  
Passivation Layers ◽  
Dislocation Energy ◽  
Effect Of Oxygen

The thermomechanical behavior of Cu thin films, 600–1125 nm thick and encapsulated between SiNx barrier and SiNx or AlNx passivation layers on silicon substrates, was studied during thermal cycling between room temperature and 400 or 500 °C using the substrate curvature method. Films were prepared with varying oxygen contents, and the distribution of oxygen through the thickness of selected films was studied before and after thermal cycling using secondary ion mass spectrometry. Large variations in the thermomechanical behavior with oxygen content were found and correlated with segregation of oxygen to the film/barrier and film/passivation interfaces. These variations are thought to be due to recovery of stored misfit dislocation energy, which is, in turn, controlled by oxygen in the film. Effects of oxygen on film deformation through variations in interfacial adhesion and diffusion-induced dislocation glide are considered.

Stress and Stress Relaxation Study of Sputtered PZT Thin Films for Microsystems Applications

1999 ◽  
Vol 594 ◽  
Author(s):  
E. Defaÿ ◽  
C. Malhaire ◽  
C. Dubois ◽  
D. Barbier
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Tensile Stress ◽  
Secondary Ion Mass Spectrometry ◽  
Radius Of Curvature ◽  
Silicon Substrates ◽  
Pzt Films ◽  
Before And After ◽  
Oxygen Migration ◽  
20 Nm

AbstractResidual stresses in thin films play an important role in the mechanical behaviour of MEMS. In this paper we present a study of the stress and its relaxation for the PZT films, and associated electrodes, deposited on oxidized silicon substrates. The stresses were calculated from the bending plate method and the Stoney's equation. The radius of curvature were measured by optical profilometry before and after films deposition. The substrates (180 μm Si + 0.66 μm thermal SiO2) were coated with sputtered Ti (20 nm) and Pt (200 nm) used as bottom electrode. The global stress in the Ti/Pt layer was found compressive (−1.29 GPa) after deposition and tensile (465 MPa) after annealing (400°C, 30s, Ar). A 0.55 μm thick PZT layer was RF-magnetron sputtered and crystallized by a RTA (700°, 30s, Air). The as-deposited PZT films exhibited a little tensile stress of 43 MPa. After annealing, a tensile stress value of 363 MPa was found. Finally, we observed that the stress of the whole multilayer showed a decrease as a function of time. In order to explain this phenomenon, depth profile of each component of the PZT layer were obtained by Secondary Ion Mass Spectrometry (SIMS). This time-dependent stress relaxation was then correlated to a lead and oxygen migration across the PZT layer.

Growth and study of BaZrO3 thin films by pulsed excimer laser ablation

2003 ◽  
Vol 784 ◽  
Author(s):  
V. Rajasekarakumar ◽  
P. Victor ◽  
R. Ranjith ◽  
S. Saha ◽  
S. Rajagopalan ◽  
...  
Keyword(s):  
Thin Films ◽  
Secondary Ion Mass Spectrometry ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Frequency Regime ◽  
Different Temperatures ◽  
The Right ◽  
Limiting Case ◽  
Secondary Ion

ABSTRACTThin films of BaZrO3 (BZ) were grown using a pulsed laser deposition technique on platinum coated silicon substrates. Films showed a polycrystalline perovskite structure upon different annealing procedures of in-situ and ex-situ crystallization. The composition analyses were done using Energy dispersive X-ray analysis (EDAX) and Secondary ion mass spectrometry (SIMS). The SIMS analysis revealed that the ZrO2 formation at the right interface of substrate and the film leads the degradation of the device on the electrical properties in the case of ex-situ crystallized films. But the in-situ films exhibited no interfacial formation. The dielectric properties have been studied for the different temperatures in the frequency regime of 40 Hz to 100kHz. The response of the film to external ac stimuli was studied at different temperatures, and it showed that ac conductivity values in the limiting case are correspond to oxygen vacancy motion. The electrical modulus is fitted to a stretched exponential function and the results clearly indicate the presence of the non-Debye type of dielectric relaxation in these materials.

Thermomechanical Behavior and Properties of Passivated Pvd and Ecd Cu Thin Films

2005 ◽  
Vol 875 ◽  
Author(s):  
M. Gregoire ◽  
S. Kordic ◽  
P. Gergaud ◽  
O. Thomas ◽  
M. Ignat
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Grain Growth ◽  
Impurity Content ◽  
Thermomechanical Behavior ◽  
Temperature Curve ◽  
Cu Films ◽  
Texture Change ◽  
Cu Film ◽  
Electrochemically Deposited

AbstractThe thermomechanical behavior is investigated of SiCN-encapsulated blanket Physical Vapor Deposited (PVD) and Electrochemically Deposited (ECD) Cu films. At lower ECD Cu film thicknesses an anomalous shape and a tail of the stress-temperature curve are observed, which are not caused by impurities at the interfaces, but are correlated to highly textured microstructure. Repeated thermal cycling of up to 400 °C does not markedly change the texture of the films, but a significant texture change takes place with increasing ECD Cu thickness. Thermal cycling induces grain growth for thicker films only. Impurity content and distribution in the PVD films do not change due to cycling.

Influence of the Microstructure on the Optical Characteristics of SrTiO3 thin films

2005 ◽  
Vol 20 (1) ◽  
pp. 68-74 ◽  
Author(s):  
M. Gaidi ◽  
L. Stafford ◽  
A. Amassian ◽  
M. Chaker ◽  
J. Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Characteristics ◽  
Silicon Substrates ◽  
Deposition Pressure ◽  
X Ray ◽  
Full Characterization

The influence of the microstructure of strontium-titanate-oxide (SrTiO3 or STO) thin films on their optical properties was investigated through an extensive characterization. The STO films have been deposited on silicon substrates by reactive pulsed laser deposition. The effect of the oxygen deposition pressure on the crystalline quality of the films was systematically studied by x-ray diffraction and scanning electron microscopy. Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry were used to determine the atomic density and depth concentration profiles of the various species forming the film. The refractive index and extinction coefficient were obtained using variable angle spectroscopic ellipsometry. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their microstructural properties. In particular, the refractive index increases with film density, while losses decrease. In addition, the interface between STO and Si is characterized by an interdiffusion layer. As the deposition pressure is enhanced, the width of this layer significantly increases, inducing localized inhomogeneity of the refractive index.

scholarly journals ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1035 ◽  
Author(s):  
Alireza M. Kia ◽  
Nora Haufe ◽  
Sajjad Esmaeili ◽  
Clemens Mart ◽  
Mikko Utriainen ◽  
...  
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
3D Analysis ◽  
Tof Sims ◽  
Before And After ◽  
Sims Analysis

For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films.

Effect of oxygen on the thermomechanical behavior of tantalum thin films during the β–α phase transformation

2006 ◽  
Vol 100 (12) ◽  
pp. 123508 ◽  
Author(s):  
Robert Knepper ◽  
Blake Stevens ◽  
Shefford P. Baker
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Thermomechanical Behavior ◽  
Α Phase ◽  
Effect Of Oxygen

A Comparative Study of CdS Thin Films Grown by Chemical-Bath Deposition and Close-Spaced Sublimation

2001 ◽  
Vol 668 ◽  
Author(s):  
H.R. Moutinho ◽  
D. Albin ◽  
Y. Yan ◽  
R.G. Dhere ◽  
C. Perkins ◽  
...  
Keyword(s):  
Thin Films ◽  
Borosilicate Glass ◽  
Hexagonal Structure ◽  
Silicon Substrates ◽  
Planar Defects ◽  
Main Effect ◽  
Before And After ◽  
Conformal Coverage ◽  
Cds Thin Films ◽  
Cubic Structure

ABSTRACTIn this work we study the properties of cadmium sulfide thin films grown by chemicalbath deposition and close-spaced sublimation, on SnO2/borosilicate glass and SnO2/silicon substrates, before and after treatment in vapor CdCl2 at 400°C for 5 minutes. The as-deposited CBD CdS films had cubic structure, poor crystallinity, and high density of planar defects. After the CdCl2 treatment, these films recrystallized to the hexagonal structure, with improved crystallinity and a decrease in the density of planar defects. The as-deposited CSS films had hexagonal structure, better crystallinity, and lower density of planar defects. The main effect of the CdCl2 treatment was a decrease in the intragrain strain in the films. The CBD films had smaller grains and provided a good conformal coverage over the SnO2 films. In contrast to these films, CSS CdS did not have any oxygen or chlorine in its bulk.

scholarly journals Microstructural and Compositional Analysis of Strontium-Doped Lead Zirconate Titanate Thin Films on Gold-Coated Silicon Substrates

2009 ◽  
Vol 15 (1) ◽  
pp. 30-35 ◽  
Author(s):  
S. Sriram ◽  
M. Bhaskaran ◽  
D.R.G. Mitchell ◽  
K.T. Short ◽  
A.S. Holland ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Secondary Ion Mass Spectrometry ◽  
Eutectic Point ◽  
Compositional Analysis ◽  
Lead Zirconate ◽  
Columnar Structure ◽  
Silicon Substrates ◽  
Tem Analysis ◽  
Zirconate Titanate

AbstractThis article discusses the results of transmission electron microscopy (TEM)-based characterization of strontium-doped lead zirconate titanate (PSZT) thin films. The thin films were deposited by radio frequency magnetron sputtering at 300°C on gold-coated silicon substrates, which used a 15 nm titanium adhesion layer between the 150 nm thick gold film and (100) silicon. The TEM analysis was carried out using a combination of high-resolution imaging, energy filtered imaging, energy dispersive X-ray (EDX) analysis, and hollow cone illumination. At the interface between the PSZT films and gold, an amorphous silicon-rich layer (about 4 nm thick) was observed, with the film composition remaining uniform otherwise. The films were found to be polycrystalline with a columnar structure perpendicular to the substrate. Interdiffusion between the bottom metal layers and silicon was observed and was confirmed using secondary ion mass spectrometry. This occurs due to the temperature of deposition (300°C) being close to the eutectic point of gold and silicon (363°C). The diffused regions in silicon were composed primarily of gold (analyzed by EDX) and were bounded by (111) silicon planes, highlighted by the triangular diffused regions observed in the two-dimensional TEM image.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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