A Comparative Study of CdS Thin Films Grown by Chemical-Bath Deposition and Close-Spaced Sublimation

2001 ◽  
Vol 668 ◽  
Author(s):  
H.R. Moutinho ◽  
D. Albin ◽  
Y. Yan ◽  
R.G. Dhere ◽  
C. Perkins ◽  
...  
Keyword(s):  
Thin Films ◽  
Borosilicate Glass ◽  
Hexagonal Structure ◽  
Silicon Substrates ◽  
Planar Defects ◽  
Main Effect ◽  
Before And After ◽  
Conformal Coverage ◽  
Cds Thin Films ◽  
Cubic Structure

ABSTRACTIn this work we study the properties of cadmium sulfide thin films grown by chemicalbath deposition and close-spaced sublimation, on SnO2/borosilicate glass and SnO2/silicon substrates, before and after treatment in vapor CdCl2 at 400°C for 5 minutes. The as-deposited CBD CdS films had cubic structure, poor crystallinity, and high density of planar defects. After the CdCl2 treatment, these films recrystallized to the hexagonal structure, with improved crystallinity and a decrease in the density of planar defects. The as-deposited CSS films had hexagonal structure, better crystallinity, and lower density of planar defects. The main effect of the CdCl2 treatment was a decrease in the intragrain strain in the films. The CBD films had smaller grains and provided a good conformal coverage over the SnO2 films. In contrast to these films, CSS CdS did not have any oxygen or chlorine in its bulk.

scholarly journals Study the effect by CO2 laser on some optical properties of (Cd) thin film doping by Ni

2008 ◽  
Vol 5 (3) ◽  
pp. 387-390
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Co2 Laser ◽  
Energy Gap ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Before And After ◽  
Cds Thin Films

In this research study the effect of irradiation by (CW) CO2 laser on some optical properties of (Cds) doping by Ni thin films of (1)µm thickness has been prepared by heat evaporation method. (X-Ray) diffraction technique showed the prepared films before and after irradiation are ploy crystalline hexagonal structure, optical properties were include recording of absorbance spectra for prepared films in the range of (400-1000) nm wave lengths, the absorption coefficient and the energy gap were calculated before and after irradiation, finally the irradiation affected (CdS) thin films by changing its color from the Transparent yellow to dark rough yellow and decrease the value absorption coefficient also increase the value of energy gap.

Effect of Ammonium Acetate on the Properties of Chemical Bath Deposited CdS Films

2014 ◽  
Vol 1630 ◽  
Author(s):  
Abeer A. Al-Yafeai ◽  
Sovannary Phok ◽  
Sahar A. Al-Shaibani ◽  
Shifaa M. Al-Baity ◽  
Esmaeel M. Al-Hammadi ◽  
...  
Keyword(s):  
Thin Films ◽  
Ammonium Acetate ◽  
Ph Value ◽  
Ammonium Hydroxide ◽  
Cadmium Acetate ◽  
Hexagonal Structure ◽  
Bath Solution ◽  
Electron Probe Micro Analyzer ◽  
Cds Thin Films ◽  
Cds Films

ABSTRACTThis investigation is a comprehensive study of the effect of ammonium acetate on the electrical, optical, morphology and microstructure of CdS thin films grown by Chemical Bath Deposition method (CBD). Two sets of CdS thin films (A and B) were deposited on glass substrates at 60°C for 60 min. The films were deposited using chemical bath solution that consists of cadmium acetate, ammonium hydroxide, and thiourea. However, ammonium acetate was added into the chemical bath used to deposit set (B), where ammonium acetate was eliminated from bath solution used to deposit set (A). The films’ morphology was examined by Field Emission Scanning Electron Microscopy (FE-SEM), whereas, the chemical composition was investigated by Electron Probe Micro-Analyzer (EPMA). The X-Ray Diffraction (XRD) θ/2θ technique was applied to study the structure of the films. Atomic Force Microscopy (AFM) was used to measure the average surface roughness of the films, and Dektak Profilometer was used to determine the CdS films thickness. The optical and electrical properties for the films were determined using UV-Vis-NIR Spectrometer, and the Hall Effect technique, respectively. The highest carrier mobility was obtained for the films deposited in an ammonium acetate free bath. However, both films were polycrystalline with hexagonal structure exhibiting a tendency toward <002> texture, that increase with increasing the pH value of the chemical bath.

Effect of oxygen on the thermomechanical behavior of passivated Cu thin films

2003 ◽  
Vol 18 (9) ◽  
pp. 2122-2134 ◽  
Author(s):  
Jonathan B. Shu ◽  
Susan B. Clyburn ◽  
Thomas E. Mates ◽  
Shefford P. Baker
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Secondary Ion Mass Spectrometry ◽  
Thermomechanical Behavior ◽  
Silicon Substrates ◽  
Dislocation Glide ◽  
Before And After ◽  
Passivation Layers ◽  
Dislocation Energy ◽  
Effect Of Oxygen

The thermomechanical behavior of Cu thin films, 600–1125 nm thick and encapsulated between SiNx barrier and SiNx or AlNx passivation layers on silicon substrates, was studied during thermal cycling between room temperature and 400 or 500 °C using the substrate curvature method. Films were prepared with varying oxygen contents, and the distribution of oxygen through the thickness of selected films was studied before and after thermal cycling using secondary ion mass spectrometry. Large variations in the thermomechanical behavior with oxygen content were found and correlated with segregation of oxygen to the film/barrier and film/passivation interfaces. These variations are thought to be due to recovery of stored misfit dislocation energy, which is, in turn, controlled by oxygen in the film. Effects of oxygen on film deformation through variations in interfacial adhesion and diffusion-induced dislocation glide are considered.

Preparation and Properties of CdS Thin Films Deposited by Chemical Bath Deposition

2011 ◽  
Vol 110-116 ◽  
pp. 1406-1410
Author(s):  
Hai Yi Li ◽  
Yan Lai Wang ◽  
Shi Liang Ban ◽  
Yi Min Wang
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Film Sample ◽  
X Ray ◽  
Gap Energy ◽  
Cds Thin Films ◽  
Cubic Structure

CdS thin films deposited on glass substrate are prepared by chemical bath deposition using the reaction between CdSO4 and CS (NH2)2. The composition, surface morphology and structural properties of as-deposited and annealed CdS thin films were studied using scanning electron microscopy (SEM), X-ray diffractometry (XRD), energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) techniques. The results indicate that the dense, homogeneous polycrystalline CdS thin films with smooth surface can be obtained by chemical bath deposition. The CdS thin films have cubic structure and the ratio of S and Cd is 1:1 in CdS thin films. Optical properties of CdS films were measured with ultraviolet-visible spectrophotometer. The optical band gap energy (Eg) of film sample was found to be 2.31 eV.

Annealing Effects on the Properties of Electrodeposited CdSSe Thin Films

2011 ◽  
Vol 15 (1) ◽  
pp. 43-48
Author(s):  
T. Mahalingam ◽  
V. Dhanasekaran ◽  
S. Rajendran ◽  
G. Ravi ◽  
Luis Ixtlilco ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Complex Refractive Index ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Electron Microscopic ◽  
X Ray ◽  
Before And After ◽  
Annealing Effects ◽  
Scanning Electron

The effect of post heat treatment on structural, morphological and optical properties of electrodeposited CdSSe solid solution thin films were studied using X-ray diffractometer (XRD), scanning electron microscopy (SEM), and UV-Vis-NIR spectrophotometer, respectively. X-ray diffraction patterns revealed that polycrystalline nature with hexagonal structure of CdSSe thin films. Also the microstructural properties are calculated tends to increase and the face centred hexagonal orientation of CdSSe thin film is enhanced significantly by increasing the annealing temperature. Scanning electron microscopic images revealed that the hexagonal shaped grains are occupying the entire surface of the film. The optical transmittance and absorption spectra were recorded in the range 400 to1100 nm. The band gap of the CdSSe thin films was found to decrease from 2.0 eV to 1.8 eV due to annealing temperature. The real part of the complex refractive index (n) and the imaginary part extinction coefficient (k) were calculated before and after annealing.

scholarly journals A Comparison of Modifications Induced by Li3+and Ag14+Ion Beam in Spectroscopic Properties of Bismuth Alumino-Borosilicate Glass Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-11 ◽  
Author(s):  
Ravneet Kaur ◽  
Surinder Singh ◽  
Om Prakash Pandey
Keyword(s):  
Thin Films ◽  
Borosilicate Glass ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Glass Network ◽  
Spectroscopic Properties ◽  
Optical Parameters ◽  
Spectroscopic Techniques ◽  
Structural And Optical Properties ◽  
Before And After

Ion irradiation effects on the glass network and structural units have been studied by irradiating borosilicate glass thin film samples with 50 MeV Li3+and 180 MeV Ag14+swift heavy ions (SHI) at different fluence rates ranging from 1012 ions/cm2to 1014 ions/cm2. Glass of the composition (65-x) Bi2O3-10Al2O3-(65-y) B2O3-25SiO2(x= 45, 40;y= 20, 25) has been prepared by melt quench technique. To study the effects of ionizing radiation, the glass thin films have been prepared from these glasses and characterized using XRD, FTIR, and UV-Vis spectroscopic techniques. IR spectra are used to study the structural arrangements in the glass before and after irradiation. The values of optical band gap, Urbach energy, and refractive index have been calculated from the UV-Vis measurements. The variation in optical parameters with increasing Bi2O3content has been analyzed and discussed in terms of changes occurring in the glass network. A comparative study of the influence of Li3+ion beam on structural and optical properties of the either glass system with Ag14+ion is done. The results have been explained in the light of the interaction that SHI undergo on entering the material.

scholarly journals Copper Incorporation into CdS Thin Films by Ionic Exchange in an Aqueous Solution Process at Room Temperature

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
E. Flores-García ◽  
M. A. Hernández-Landaverde ◽  
P. González-García ◽  
R. Ramírez-Bon
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Solution Process ◽  
Deposition Process ◽  
Hexagonal Structure ◽  
Ionic Exchange ◽  
X Ray ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films were deposited, on glass substrates, at 70°C for 120 min using an ammonium-free chemical bath deposition process. After deposition, the films were placed in a CuCl2 solution for 45, 60, 75, and 90 min, respectively, for their ion exchange, generating CdxCu1-xS films. The obtained films were analyzed by X-ray diffraction, Raman spectroscopy, X-ray wavelength dispersion spectrometry, and scanning electron microscopy. The reference CdS films showed a homogeneous appearance and a yellowish color; elapsing the immersion time, the films changed their color showing a greenish appearance. The X-ray analysis indicated that the CdS films developed a hexagonal structure with preferential orientation along the plane (002). During the ion exchange, a decrease in the intensity of the reflection (002) was observed as well as a slight displacement of this reflection towards higher values of 2θ derived from the substitution of Cd atoms by Cu atoms. The WDS analysis revealed that approximately 10% of the cadmium atoms were replaced by copper ones after 90 min of immersion.

scholarly journals Structural and Electrical Transport Properties of CdS and Al-doped CdS Thin Films Deposited by Spray Pyrolysis

2011 ◽  
Vol 4 (1) ◽  
pp. 11 ◽  
Author(s):  
A. H. Rubel ◽  
J. Podder
Keyword(s):  
Thin Films ◽  
Cadmium Sulfide ◽  
Spray Pyrolysis ◽  
Electrical Transport ◽  
Electrical Measurement ◽  
Hexagonal Structure ◽  
Electrical Transport Properties ◽  
X Ray ◽  
Cds Thin Films ◽  
Cds Film

Cadmium sulfide (CdS) and aluminum (Al) doped cadmium sulfide (Cd1-xAlxS) thin films have been deposited on glass substrate at 300 ºC by spray pyrolysis. The structural and electrical properties of the as-deposited films have been characterized using Energy Dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and D.C. electrical measurement. The effect of Al on the surface morphology of CdS film was studied by Scanning Electron microscopy (SEM). EDX shows that the deposited samples are stoichiometric. The peak intensities observed in the XRD patterns were found consistent to a polycrystalline hexagonal structure. The XRD study shows that the hexagonal structure of CdS is not much affected with respect to Al doping.  Al-doped CdS thin films show low electrical resistivity of about 48 Ω cm and high carrier density of about 1.1×1019 cm-3.Keywords: Spray pyrolysis; CdS, Cd1-xAlxS; Thin films; EDX; XRD; Hall mobility.© 2012 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.doi: http://dx.doi.org/10.3329/jsr.v4i1.8548J. Sci. Res. 4 (1), 11-19  (2012) 

Physical Properties of CdSxTe1-x Thin Films Prepared by Close Spaced Sublimation Method

2017 ◽  
Vol 890 ◽  
pp. 291-294 ◽  
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Energy Gap ◽  
Hexagonal Phase ◽  
Preferential Orientation ◽  
Quartz Glass Substrate ◽  
Transient Photoconductivity ◽  
Sublimation Method ◽  
Cds Thin Films ◽  
Cubic Structure

CdSxTe1-x (0 ≤ x ≤ 1) thin films were prepared on clear quartz glass substrate by close spaced sublimation method using stoichiometric mixed powders of pure CdS and CdTe compounds. Crystal structure of CdSxTe1-x thin films was cubic structure with a preferential orientation of (111) plane when the S mole ratio less than 0.2. However, For the composition 0.2 ≤ x ≤ 0.8, the cubic and the hexagonal phases were found to coexist in the system and the films became less preferentially oriented whereas CdS thin films formed in the hexagonal phase with a preferential orientation of (002) plane. SEM micrographs showed the grain size decreased when the S content increased. As the S content increased, the energy gap value of CdSxTe1-x thin films varied from 1.48 eV (for CdTe) to 2.25 eV (for CdS). Dark electrical sheet resistance of CdSxTe1-x thin films decreased as a function of S content to minimum value about 2.24×107 Ω/sq for x=0.8 and then slightly increased to 4.13×107 Ω/sq for x=1.0. From the transient photoconductivity measurements, the highest photosensitivity value about 60.0 was obtained for the films with x = 0.8.

scholarly journals study Of Optical Properties Of Copper-Doped Cds Thin Films

2004 ◽  
Vol 1 (2) ◽  
pp. 264-270
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Absorption Edge ◽  
Glass Substrate ◽  
Interstitial Atom ◽  
Long Wavelength ◽  
Before And After ◽  
Frenkel Defects ◽  
Cds Thin Films

Thin films of CdS:Cu were deposited onto glass substrate temperature 400 °c. The optieal properties have been studied for Cds doped with (1,3, 8) wt% of Cu before and after Gamma irradiation. It was found that the irradiation caused an ( Frenkel defects) where the atom is displaced from its original site leaving vacancy and forming on interstitial atom. It was found the irradiation caused an absorption edge shifting towards long wavelength as a result of the increasing of Cu concentration.

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