dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium

2014 ◽  
Vol 1655 ◽  
Author(s):  
Fahid Algahtani ◽  
Patrick W Leech ◽  
Geoffrey K Reeves ◽  
Anthony S Holland ◽  
Mark Blackford ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Van Der Pauw ◽  
Heated Stage

ABSTRACTThe formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in an attempt to minimize the thermal budget for the process. Cross-sectional Transmission Electron Microscopy (TEM) was used to determine the texture of the germanide layer and the morphology and constituent composition of the Ge/NiGe interface. The onset and completion of reaction between Ni and Ge were identified by means of a heated stage in combination with in-situ x-ray diffraction (XRD) measurements. The stages of reaction were also monitored using measurements of sheet resistance of the germanides by the Van der Pauw technique. The results have shown that the minimum temperature for the initiation of reaction of Ni and Ge to form NiGe was 225 °C. However, an annealing temperature > 275 °C was necessary for the extensive (and practical) formation of NiGe. Between 200 and 300 °C, the duration of annealing required for the formation of NiGe was significantly longer than at higher temperatures. The stoichiometry of the germanide was very close to NiGe (1:1) as determined using energy dispersive spectroscopy (EDS).

In-Situ Studies of the Formation Sequence of Silicides During Vacuum (10-7 TORR)Thermal Annealing of TI/Polysilicon Bilayers

1991 ◽  
Vol 237 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen ◽  
S. Lee
Keyword(s):  
Thermal Reaction ◽  
Ex Situ ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
Ramp Rate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Film Forming

ABSTRACTThe formation of suicides during the thermal reaction of Ti/polysilicon bilayers has been investigated using both in-stu four point sheet resistance measurements and ex-situ measurements including X-ray diffraction, cross-sectional transmission electron microscopy and Auger electron spectroscopy. For a series of samples annealed at a ramp rate of 10°C/min the following sequence of changes in the bilayers occurred. At temperatures exceeding 350°C and prior to the silicidation oxygen from the vacuum system diffuses into the Ti film forming a solid solution of Ti(O) with O levels up to 20 %. An amorphous TixSiy layer is the first major suicide reaction observed at temperatures near 440°C. The first major crystalline phase is observed at 500°C and identified as C49 TiSi2. This phase was found to coexist at these temperatures with the partially consumed Ti(O) and the amorphous TixSiy layers. Further annealing above 700 °C results in the final structural transformation from C49 TiSi2 to C54 TiSi2.

Microstructures and electrical resistivities of the RuO2 electrode on SiO2/Si annealed in the oxygen ambient

1996 ◽  
Vol 11 (11) ◽  
pp. 2681-2684 ◽  
Author(s):  
Jeong Soo Lee ◽  
Hyun Ja Kwon ◽  
Young Woo Jeong ◽  
Hyun Ha Kim ◽  
Cha Yeon Kim
Keyword(s):  
Electron Microscopy ◽  
Annealing Temperature ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Dc Sputtering ◽  
Transmission Electron ◽  
Electrical Resistivities

The electrical resistivity property of RuO2 thin films grown on the SiO2/Si substrate by reactive dc sputtering was examined in terms of microstructure using x-ray diffraction and cross-sectional transmission electron microscopy. As the samples were annealed in the oxygen ambient over the temperature range 300–700 °C, the resistivity decreased from 270 to 90 μΩcm with increasing annealing temperature. When heat treatment was performed below 500 °C, the strain which accumulated in the RuO2 layer during deposition was released without significant increase in grain size. It is thought that below 500 °C improvement in the crystallinity plays an important role in the variation of the resistivity. Although a considerable amount of growth of RuO2 grains was achieved, the columnar structure of the RuO2 layer in the as-deposited sample remained unchanged even after annealing at 700 °C. The resistivity improvement above 500 °C was driven mainly by the grain boundary annihilation.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

scholarly journals A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Ruei-Cheng Lin ◽  
Tai-Kuang Lee ◽  
Der-Ho Wu ◽  
Ying-Chieh Lee
Keyword(s):  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
High Entropy Alloy ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
High Entropy ◽  
Transmission Electron ◽  
Thin Film Resistors

Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR).

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

The Evaluation of TiTe2 as a Diffusion Barrier in the Formation of Low Thermal Conductivity Nanolaminates with Bi2Te3 and Sb2Te3

2010 ◽  
Vol 74 ◽  
pp. 38-47
Author(s):  
Clay Mortensen ◽  
Paul Zschack ◽  
David C. Johnson
Keyword(s):  
Thermal Conductivity ◽  
Diffusion Barrier ◽  
Self Assembly ◽  
Low Temperatures ◽  
Annealing Temperature ◽  
The Self ◽  
High Angle ◽  
X Ray Diffraction ◽  
Amorphous Precursor ◽  
X Ray

The evolution of designed [(Ti-Te)]x[(Sb-Te)]y, [(Bi-Te)]x[(Sb-Te)]y, [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]y and [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors were followed as a function of annealing temperature and time using both low and high angle x-ray diffraction techniques to probe the self assembly into nanolaminate materials. The [(Bi-Te)]x[(Sb-Te)]y precursors were found to interdiffuse at low temperatures to form a (BixSb1-x)2Te3 alloy. The [(Ti-Te)]x[(Bi-Te)]y and [(Ti-Te)]x[(Sb-Te)]y precursors formed ordered nanolaminates [{(TiTe2)}1.35]x[Bi2Te3]y and [{(TiTe2)}1.35]x[Sb2Te3]y respectively. The [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]x precursors formed [{(TiTe2)}1.35]w[(Bi0.5Sb0.5)2Te3]2x nanolaminates on annealing, as the bismuth and antimony layers interdiffused. Over the range of TiTe2 thicknesses used in [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors, Bi and Sb were found to interdiffuse through the 2-4 nm thick Ti-Te layers, resulting in the formation of (BixSb1-x)2Te3 alloy layers as part of the final nanolaminated products. When the Bi-Te and Sb-Te thicknesses were equal in the amorphous precursors, symmetric [{(TiTe2)}1.35]m[(Bi0.5Sb0.5)2Te3]n nanolamiantes were formed. When the thicknesses of Bi-Te and Sb-Te layers were not equal in the amorphous precursor, asymmetric [(TiTe2)1.35]m[(BixSb1-x)2Te3]n[(TiTe2)1.35]m[(BixSb1-x)2Te3]p nanolaminates were formed. These results imply that to form (A)w(B)x(C)y nanolaminates using designed layered precursors all three components must be immiscible. To form (A)x(B)y(A)x(C)z nanolaminates, the components must be immiscible or the precursor to the A component and the A component itself must be an effective interdiffusion barrier preventing B and C from mixing.

Late Mesozoic—Cenozoic clay mineral successions of southern Iran and their palaeoclimatic implications

Clay Minerals ◽  
2005 ◽  
Vol 40 (2) ◽  
pp. 191-203 ◽  
Author(s):  
F. Khormali ◽  
A. Abtahi ◽  
H. R. Owliaie
Keyword(s):  
Electron Microscopy ◽  
Upper Cretaceous ◽  
Sedimentary Rocks ◽  
X Ray Diffraction ◽  
Humid Climate ◽  
X Ray ◽  
Late Mesozoic ◽  
Southern Iran ◽  
Transmission Electron

AbstractClay minerals of calcareous sedimentary rocks of southern Iran, part of the old Tethys area, were investigated in order to determine their origin and distribution, and to reconstruct the palaeoclimate of the area. Chemical analysis, X-ray diffraction, transmission electron microscopy, scanning electron microscopy, and thin-section studies were performed on the 16 major sedimentary rocks of the Fars and Kuhgiluyeh Boyerahmad Provinces.Kaolinite, smectite, chlorite, illite, palygorskite and illite-smectite interstratified minerals were detected in the rocks studied. The results revealed that detrital input is possibly the main source of kaolinite, smectite, chlorite and illite, whilein situneoformation during the Tertiary shallow saline and alkaline environment could be the dominant cause of palygorskite occurrences in the sedimentary rocks.The presence of a large amount of kaolinite in the Lower Cretaceous sediments and the absence or rare occurrence of chlorite, smectite, palygorskite and illite are in accordance with the warm and humid climate of that period. Smaller amounts of kaolinite and the occurrence of smectite in Upper Cretaceous sediments indicate the gradual shift from warm and humid to more seasonal climate. The occurrence of palygorskite and smectite and the disappearance of kaolinite in the late Palaeocene sediments indicate the increase in aridity which has probably continued to the present time.

An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

2004 ◽  
Vol 19 (4) ◽  
pp. 347-351
Author(s):  
J. Xu ◽  
X. S. Wu ◽  
B. Qian ◽  
J. F. Feng ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Large Lattice ◽  
Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

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