Impact of Pore Size and Morphology of Porous Organosilicate Glasses on Integrated Circuit Manufacturing

2006 ◽  
Vol 914 ◽  
Author(s):  
Mark O'Neill ◽  
Mary K Haas ◽  
Brian K Peterson ◽  
Raymond N Vrtis ◽  
Scott J Weigel ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Size ◽  
Integrated Circuit ◽  
Network Connectivity ◽  
Chemical Vapor ◽  
Total Porosity ◽  
Molecular Volume ◽  
Porous Films ◽  
Organosilicate Glass

AbstractPorous organosilicate materials produced by plasma enhanced chemical vapor deposition are the leading candidates for back-end-of-line dielectric insulators for IC manufacturing at 45nm design features and beyond. The properties of porous organosilicate glass films of dielectric constant k=2.50 ± 0.05 formed using diethoxymethylsilane and five different porogen precursors with an ultraviolet post treatment are reported. By varying the porogen precursor type pore sizes of 1-2 nm (equivalent spherical diameter) and porosities in the range of 24-31% were measured. While there were no observable trends in pore size with the molecular volume or plasma reactivity of the porogen precursor, modulus values ranged from 6.6 to 10.8 GPa. Porous films with the highest mechanical properties were found to have the highest matrix dielectric constant, highest network connectivity (lowest methyl content), and highest density. Within this process space, maximizing the network connectivity of the film was found to be more important to mechanical properties than lowering the total porosity. In effect, the choice of porogen precursor dictates the film morphology through its impact on the organosilicate glass matrix and pore size.

The Effects of Oxygen Content on Bonding Configurations and Properties of Low-k Organosilicate Glass Dielectric Films

2008 ◽  
Vol 8 (5) ◽  
pp. 2549-2553
Author(s):  
Sheng-Wen Chen ◽  
Chuan-Pu Liu ◽  
Shiu-Ko Jangjian ◽  
Ying-Lang Wang
Keyword(s):  
Dielectric Constant ◽  
Pore Size ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Chemical Vapor Deposition Method ◽  
Cage Structure ◽  
Low Dielectric ◽  
Small Pore ◽  
Organosilicate Glass ◽  
Precursor Ratio

The low dielectric constant SiOC:H films of plasma enhanced chemical vapor deposition method have been developed with various precursor ratio. The reduction of the dielectric constant has been achieved by increasing the porosity in the films through the change of precursor ratio. In order to clarify the relation between dielectric constant and film porosity, the small angle X-ray scattering technique has been applied for characterizing pore size in the porous low-k dielectric films. The effects of the oxygen on the bonding configuration and electrical properties were investigated by adjusting TMS/O2 gas ratios. The porous SiOC:H film displays the small pore sizes and lower dielectric constant. It is found that the pore size of SiOC:H film is significant smaller than 1 nm and the pore size attributed to Si–O–Si cage structure change.

Plasma Enhanced Chemical Vapor Deposition of Porous Organosilicate Glass ILD Films With k ≤ 2.4.

2003 ◽  
Vol 766 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Mark L. O'Neill ◽  
Jean L. Vincent ◽  
Aaron S. Lukas ◽  
Brian K. Peterson ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Mechanical Strength ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicate Glass

AbstractWe report on our work to develop a process for depositing nanoporous organosilicate (OSG) films via plasma enhanced chemical vapor deposition (PECVD). This approach entails codepositing an OSG material with a plasma polymerizable hydrocarbon, followed by thermal annealing of the material to remove the porogen, leaving an OSG matrix with nano-sized voids. The dielectric constant of the final film is controlled by varying the ratio of porogen precursor to OSG precursor in the delivery gas. Because of the need to maintain the mechanical strength of the final material, diethoxymethylsilane (DEMS) is utilized as the OSG precursor. Utilizing this route we are able to deposit films with a dielectric constant of 2.55 to 2.20 and hardness of 0.7 to 0.3 GPa, respectively.

scholarly journals Characterization of porosity and dielectric constant of fluorocarbon porous films synthesized by using plasma-enhanced chemical vapor deposition and solvent process

2003 ◽  
Vol 82 (15) ◽  
pp. 2476-2478 ◽  
Author(s):  
Kazuo Takahashi ◽  
Takashi Mitamura ◽  
Kouichi Ono ◽  
Yuichi Setsuhara ◽  
Atsushi Itoh ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Porous Films

First Pass Study of Surface Modified Porous Low-k by Ion Implantation for Zero Thickness Barrier Requirement of Cu/MSQ/Si Stacks in Copper Metallization Scheme

2005 ◽  
Vol 863 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
Zubin P. Patel ◽  
H. Bakhru
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Ion Implantation ◽  
Porous Silica ◽  
Surface Hardness ◽  
Low Dielectric Constant ◽  
Copper Metallization ◽  
Porous Films ◽  
Critical Dimensions ◽  
Low Dielectric

AbstractLow-κ dielectrics have to meet stringent requirements in material properties in order to be successfully integrated. A particularly difficult challenge for material development is to obtain a combination of low dielectric constant with good thermal and mechanical properties. Incorporation of low dielectric constant materials such as porous silica based materials as a replacement to conventional dielectrics like SiO2 and use of Cu metallization schemes has become a necessity as critical dimensions of devices decrease. This paper is focused on the challenges in developing materials with low dielectric constant but strong thermo mechanical properties. Thin films of Ultra-Low materials such as porous Methyl Silsesquioxane (MSQ) (κ=2.2) were implanted with argon 1 × 1016 cm-2 dose at energies varying from 20 to 50 keV at room temperature. This work shows that the surface hardness of the porous films can be improved five times as compared to the as-deposited porous films by implanting Ar with 1 × 1016 cm-2 doses at 20 keV, sacrificing only a slight increase (∼9%) in dielectric constant (e.g., from 2.2 to 2.4). The hardness persists after 4500C annealing. In this current work, an ion implantation strategy was pursued to create a SiO2-like surface on MSQ. The effects of implantation parameters on the barrier property and bulk stability of MSQ were then studied. The results reveal one possible route to attain the “zero barrier thickness” requirement for interconnects systems.

scholarly journals Analytical Study of Porous Organosilicate Glass Films Prepared from Mixtures of 1,3,5- and 1,3-Alkoxysilylbenzenes

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1881
Author(s):  
Md Rasadujjaman ◽  
Xuesong Wang ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Valeriy E. Arkhincheev ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Chemical Composition ◽  
Chemical Vapor ◽  
K Value ◽  
Molar Ratios ◽  
Low Dielectric ◽  
Soft Bake ◽  
Organosilicate Glass ◽  
Bridging Groups ◽  
Low K

Organosilicate glass (OSG)-based porous low dielectric constant (low-k) films with different molar ratios of 1,3,5-tris(triethoxysilyl)benzene to 1,3-bis(triethoxysilyl)benzene bridging organic groups (1:3 and 1:7) were spin-on deposited, followed by a soft bake in air and N2 at 150 °C and hard bake in air and N2 at 400 °C. Non-ionic template (Brij®30) concentrations were varied from 0 to 41 wt% to control the porosity of the films. The chemical composition of the matrix of the films was evaluated and discussed with the shrinkage of the film during the curing, refractive indices, mechanical properties, k-values, porosity and pore structure. The chemical composition of the film cured in both air and N2-containing ambient were evaluated and compared. The benzene bridging groups containing films change their porosity (0 to 43%) but keep the pore size constant and equal to 0.81 nm when porosity is lower than 30%. The k-value decreases with increasing porosity, as expected. The films containing benzene bridge have higher a Young’s modulus than plasma-enhanced chemical vapor deposition (PECVD) methyl-terminated low-k films with the same porosity and show good hydrophobic properties after a hard bake and close to the values reported for 1,4-benzene-bridged films. The fabricated films show good stability after a long time of storage. However, the improvement of mechanical properties was lower than the values predicted by the published literature data. It was concluded that the concentration of 1,3,5-benzene bridges was below the stiffness threshold required for significant improvement of the mechanical properties. The films show UV-induced luminescence with a photon energy of 3.6 to 4.3 eV. The luminescence is related to the presence of oxygen-deficient-type defects or their combination with organic residues. The most intensive luminescence is observed in as-deposited and soft bake samples, then the intensity is reduced after a hard bake. It is assumed that the oxygen-deficient centers form because of the presence of Si–OC2H5 groups in the films and the concentration of these centers reduces when all these groups completely transformed into siloxane (Si–O–Si).

Effect of material properties on integration damage in organosilicate glass films

2001 ◽  
Vol 16 (12) ◽  
pp. 3335-3338 ◽  
Author(s):  
E. Todd Ryan ◽  
Jeremy Martin ◽  
Kurt Junker ◽  
Jeff Wetzel ◽  
David W. Gidley ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Material Properties ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Density ◽  
Etch Patterns ◽  
Low Dielectric ◽  
Organosilicate Glass

Most organosilicate glass (OSG), low dielectric constant (low-κ) films contain Si–R groups, where R is an organic moiety such as −CH3. The organic component is susceptible to the chemically reactive plasmas used to deposit cap layers, etch patterns, and ash photoresist. This study compares a spin-on, mesoporous OSG film with a completely connected pore structure to both its nonmesoporous counterpart and to another low-density OSG film deposited by plasma-enhanced chemical vapor deposition. The results show that the film with connected pores was much more susceptible to integration damage than were the nonmesoporous OSG films.

The Effect of Porogen on Physical Properties in MTMS-BTMSE Spin-on Organosilicates

2005 ◽  
Vol 875 ◽  
Author(s):  
B.R. Kim ◽  
J. M. Son ◽  
J.W. Kang ◽  
K.Y. Lee ◽  
K.K. Kang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Porous Films ◽  
Low Dielectric ◽  
Lower Dielectric Constant ◽  
Superior Mechanical Properties ◽  
Lift Off ◽  
Rc Delay ◽  
Low K

AbstractDecreasing the circuit dimensions is driving the need for low-k materials with a lower dielectric constant to reduce RC delay, crosstalk, and power consumption. In case of spin-on organosilicate low-k films, the incorporation of a porogen is regarded as the only foreseeable route to decrease dielectric constant of 2.2 or below by changing a packing density. In this study, MTMS-BTMSE copolymers that had superior mechanical properties than MSSQ were blended with decomposable polymers as pore generators. While adding up to 40 wt % porogen into MTMS:BTMSE=100:50 matrix, optical, electrical, and mechanical properties were measured and the pore structure was also characterized by PALS. The result confirmed that there existed a tradeoff in attaining the low dielectric constant and desirable mechanical strength, and no more pores than necessary to achieve the dielectric objective should be incorporated. When the dielectric constant was fixed to approximately 2.3 by controlling BTMSE and porogen contents simultaneously, the thermo-mechanical properties of the porous films were also investigated for the comparison purpose. Under the same dielectric constant, the increase in BTMSE and porogen contents led to improvement in modulus measured by the nanoindentation technique but deterioration of adhesion strength obtained by the modified edge lift-off test.

A New Low Dielectric Constant Polymer Material (k < 2): Microstructure, Electrical Properties, and Mechanical Properties

1999 ◽  
Vol 565 ◽  
Author(s):  
Yi-Pin Tsai ◽  
C. N. Liao ◽  
Yuhuan Xu ◽  
K. N. Tu ◽  
Bin Zhao ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Pore Size ◽  
Leakage Current ◽  
Polymer Material ◽  
Porous Polymer ◽  
Low Dielectric Constant ◽  
Two Phase ◽  
Low Dielectric

AbstractA porous polymer material, which is made of a two-phase composite and contains 35% porosity with a pore size less than 50Å, is found to have a dielectric constant of 1.8. It absorbs almost no water. The electrical properties, such as capacitance and leakage current, do not change with time and temperature.

Organic and Inorganic Spin-On Polymers for Low-Dielectric-Constant Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 33-38 ◽  
Author(s):  
Nigel P. Hacker
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuit ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Chip Size ◽  
Low Dielectric Constant Materials

Low-dielectric-constant materials (k < 3.0) have the advantage of facilitating manufacture of higher performance integrated-circuit (IC) devices with minimal increases in chip size. The reduced capacitance given by these materials permits shrinkage of spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low-k applications are chemical vapor deposition (CVD) or spin-on of polymeric materials. For both types of processes, there are methods and materials capable of giving k < 3.0 dielectric stacks. This article will focus on the spin-on approach and discuss the properties of both organic and inorganic spin-on polymers.While CVD SiO2 has been the mainstay of the industry, spin-on materials are appropriate for many dielectric applications. Polyimides have applications as electrical insulators, and traditional spin-on silicates or siloxanes (k > 3.0) have served as planarizing dielectrics during the last 15 years. The newer spin-on polymers have greatly enhanced mechanical, thermal, and chemical properties, exhibiting lower dielectric constants than the traditional materials.

Structural and Mechanical Properties of Low Dielectric Constant SiOC(-H) Films Using MTES/O2 Deposited by PECVD

2007 ◽  
Vol 124-126 ◽  
pp. 239-242
Author(s):  
R. Navamathavan ◽  
Anvar Zakirov ◽  
Hyun Seung Kim ◽  
Yong Jun Jang ◽  
An Soo Jung ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Elastic Modulus ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Oxygen Gas ◽  
P Type ◽  
End Group

Low dielectric constant SiOC(-H) films were deposited on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) using methyltriethoxysilane (MTES; C7H18O3Si) and oxygen gas as precursors. The SiOC(-H) films were deposited at room temperature and then annealed. Nanoindentation studies were carried out in order to determine the mechanical properties of the SiOC(-H) films. The elastic modulus and hardness of SiOC(-H) films were measured to be in the range of 2.14 – 5.02 and 0.12 – 0.74 GPa, respectively. It was observed that the values of elastic modulus and hardness decreases with increase of flow rate ratio of the precursors. In the SiOC(-H) film, -CH3 group as an end group was introduced into -O-Si-O- chain network, thereby reducing the film density to decrease the values of the mechanical properties.

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