Low-Temperature Solid-Phase Epitaxy of Defect-Free Aluminum p+-doped Silicon for Nanoscale Device Applications

2006 ◽  
Vol 940 ◽  
Author(s):  
Yann Civale ◽  
Lis K. Nanver ◽  
Peter Hadley ◽  
Egbert J. G. Goudena ◽  
Henk W. van Zeijl ◽  
...  
Keyword(s):  
Solid Phase ◽  
Bipolar Junction Transistors ◽  
Solid Phase Epitaxy ◽  
Electrical Characteristics ◽  
Nanoscale Device ◽  
Experimental Conditions ◽  
Whole Process ◽  
Device Applications ◽  
Nm Range

ABSTRACTA solid phase epitaxy (SPE) technique was developed to grow p+ aluminum-doped crystalline Si in a fully CMOS compatible process. This paper describes the experimental conditions leading to the selective growth of nanoscale single crystals where the location and dimensions are well controlled, even in the sub-100 nm range. The SPE Si crystals are defined by conventional lithography, show excellent electrical characteristics, and are uniform over the whole wafer. Fifty nanometer thick p+ SPE Si crystals were used to fabricate p+-n diodes and p+-n-p bipolar junction transistors. The high quality of the SPE Si and the remarkable control of the whole process, even in the sub-100 nm range, make this module directly usable for Si-based nanodevices.

Defect Reduction and Defect Engineering in Silicon-on-Sapphire Material Using Ge Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
N. M. Kalkhoran ◽  
J. M. Manke ◽  
B. L. Buchanan
Keyword(s):  
Leakage Current ◽  
Defect Density ◽  
Solid Phase ◽  
Substantial Reduction ◽  
Interface Region ◽  
Radiation Environment ◽  
Solid Phase Epitaxy ◽  
Defect Reduction ◽  
Radiation Induced

AbstractSubstantial reduction of defect density in silicon-on-sapphire (SOS) material is required to broaden its range of applications to include CMOS and bipolar devices. In recent years, solid phase epitaxy and regrowth (SPEAR) and double solid phase epitaxy (DSPE) processes were applied to SOS to reduce the density of defects in the silicon. These methods result in improved carrier mobilities, but also in increased leakage current, even before irradiation. In a radiation environment, this material has a large increase in radiation induced back channel leakage current as compared to standard wafers. In other words, the radiation hardness quality of the SOS declines when the crystalline quality of the Si near the sapphire interface is improved.In this paper, we will demonstrate that Ge implantation, rather than Si implantation normally employed in DSPE and SPEAR processes, is an efficient and more effective way to reduce the density of defects near the surface silicon region without improving the Si/sapphire interface region. Ge implantation may be used to engineer defects in the Si/sapphire interface region to eliminate back channel leakage problems.

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

2013 ◽  
Vol 740-742 ◽  
pp. 121-124 ◽  
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nick G. Wright ◽  
Anthony O’Neill ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Solid Phase ◽  
Sample Surface ◽  
Device Fabrication ◽  
Solid Phase Epitaxy ◽  
X Ray ◽  
Graphene Films ◽  
Few Layer Graphene ◽  
The Impact

Few-layers graphene films (FLG) were grown by local solid phase epitaxy on a semi-insulating 6H-SiC substrate by annealing Ni films deposited on the Si and C-terminated faces of the SiC. The impact of the annealing process on the final quality of the FLG films is studied using Raman spectroscopy. X-ray photoelectron spectroscopy was used to verify the presence of graphene on the sample surface. We also demonstrate that further device fabrication steps such as dielectric deposition can be carried out without compromising the FLG films integrity.

Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

1999 ◽  
Vol 580 ◽  
Author(s):  
Bing-Zong Li ◽  
Xin-Ping Qu ◽  
Guo-Ping Ru ◽  
Ning Wang ◽  
Paul Chu
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Initial Stage ◽  
Vital Effect ◽  
Amorphous Si ◽  
Kinetics Of ◽  
State Amorphization

AbstractA multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

Growth of Epitaxial CoSi2/Si Multilayers

1986 ◽  
Vol 77 ◽  
Author(s):  
B. D. Runt ◽  
N. Lewis ◽  
L. J. Schotalter ◽  
E. L. Hall ◽  
L. G. Turner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Solid Phase ◽  
Multilayer Structures ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Transmission Electron

ABSTRACTEpitaxial CoSi2/Si multilayers have been grown on Si(111) substrates with up to four bilayers of suicide and Si. To our knowledge, these are the first reported epitaxial metal-semiconductor multilayer structures. The growth of these heterostructures is complicated by pinhole formation in the suicide layers and by nonuniform growth of Si over the suicide films, but these problems can be controlled through nse of proper growth techniques. CoSi2 pinhole formation has been significantly reduced by utilizing a novel solid phase epitaxy technique in which room-temperature-deposited Co/Si bilayers are annealed to 600–650δC to form the suicide layers. Islanding in the Si layers is minimized by depositing a thin (<100Å) Si layer at room temperature with subsequent high temperature growth of the remainder of the Si. Cross-sectional transmission electron microscopy studies demonstrate that these growth procedures dramatically improve the continuity and quality of the CoSi. and Si multilayers.

scholarly journals Modeling of the irradiation effect on some physicochemical properties of metoprolol tartrate for safe medical uses

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Najoua Ouerfelli ◽  
Narcisa Vrinceanu ◽  
Ezzedine Mliki ◽  
Abdelgadir M. Homeida ◽  
Kamal A. Amin ◽  
...  
Keyword(s):  
Physicochemical Properties ◽  
Solid Phase ◽  
High Energy ◽  
Irradiation Effect ◽  
Metoprolol Tartrate ◽  
Experimental Conditions ◽  
Peculiar Behaviour ◽  
High Energy Electrons ◽  
State Quality

AbstractThe effect of gamma-irradiation and ionizing radiation (high-energy electrons beam) on the physicochemical properties of metoprolol tartrate at the solid phase and aqueous solution, has been investigated in the present study to model some properties affected by absorbed doses and to reveal some interesting mutual causal correlation. The proposed some interesting models can be adapted to other experimental conditions, and the newly obtained values of the adjustable parameters could be an excellent criterion of the state quality of the metoprolol tartrate or for other additional interpretations. The peculiar behaviour of variation of physicochemical properties against dose leads us to confirm the suggested optimized doses mentioned in previous work, for sterilization and safe medical uses.

High-Quality Boron and BF2+-Implanted P+ Junctions in Si Using Solid Phase Epitaxy and Transient Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
P.K. Vasudev ◽  
A.E. Schmitz ◽  
G.L. Olson
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Impurity Effects ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Time Resolved ◽  
Boron Doped ◽  
Epitaxial Regrowth ◽  
Doping Profiles

ABSTRACTWe report on a systematic study of the doping profiles resulting from rapid thermal annealing of boron and BF2+-implanted silicon samples that were preamorphized by Si+ implantation. A two-step process consisting of an initial solid phase epitaxial regrowth followed by a brief (~5 sec) high temperature (1050ଌ) anneal produces extremely shallow (<1500Å) junctions with low defect concentrations. The quality of the epitaxial regrowth is very sensitive to implant conditions and impurity effects as deduced from time-resolved reflectivity measurements. Using the best conditions for implantation and solid phase crystallization, we have obtained boron-doped regions with sheet resistivities of 40 Ω/ and BF2-doped regions of resistivity 60 Ω/.

scholarly journals Surface-Interface Quality of Mn5Ge3 Thin Films on Ge(001): Reactive Deposition Epitaxy vs. Solid Phase Epitaxy

2018 ◽  
Vol 24 (S1) ◽  
pp. 1622-1623 ◽  
Author(s):  
Adriana Alvídrez-Lechuga ◽  
José T. Holguín-Momaca ◽  
Óscar O. Solís-Canto ◽  
Carlos R. Santillán-Rodríguez ◽  
José A. Matutes-Aquino ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Interface Quality ◽  
Reactive Deposition

Solid Phase Epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions

2004 ◽  
Vol 810 ◽  
Author(s):  
R. El Farhane ◽  
C. Laviron ◽  
F. Cristiano ◽  
N. Cherkashin ◽  
P. Morin ◽  
...  
Keyword(s):  
Process Integration ◽  
Solid Phase ◽  
Cmos Process ◽  
Solid Phase Epitaxy ◽  
Electrical Characteristics ◽  
Use Of Self ◽  
Thermal Budget ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Low Thermal Budget

ABSTRACTWe demonstrate in this paper the viability of an ultra-low thermal budget CMOS process enabling the formation of ultra shallow junctions with competitive transistor characteristics. In particular, we demonstrate in this work the influence of defects on chemical and electrical results. It is shown that the use of self-amorphizing implantation with BF2for Source/Drain, reduces the junction leakage by two decades.

Formation of Epitaxial Soi Structures Using Alkaline Earth Fltuoride Films

1985 ◽  
Vol 53 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Tanemasa Asano
Keyword(s):  
Alkaline Earth ◽  
Room Temperature ◽  
Solid Phase ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Earth Fluoride ◽  
Alkaline Earth Fluoride ◽  
Device Applications

ABSTRACTRecent progress in the research of heteroepitaxial SOI structures such as Si/CaF2/Si and Ge/CaF2/Si structures is reviewed. Structural and electrical properties of alkaline earth fluoride films on Si substrates are first discussed. Growth conditions, structural properties, and device applications of the Si/CaF2/Si structures are then presented. It is shown that a predeposition technique, in which a thin Si layer is deposited at room temperature prior to the growth of a thick film at elevated temperature, is effective to improve the crystalline quality and the surface morphology of the film. Usefulness of solid phase epitaxy to obtain high quality films is also demonstrated. Finally, it is shown that the predeposition technique is also useful in formation of Ge/CaF2/Si structures.

Ge δ-Layers on Si(111) and Si(001) Grown by MBE and SPE

1994 ◽  
Vol 375 ◽  
Author(s):  
J. Falta ◽  
T. Gog ◽  
G. Materlik ◽  
B. H. Müjller ◽  
M. Horn-Von Hoegen
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Standing Waves ◽  
Solid Phase Epitaxy ◽  
High Crystalline Quality ◽  
X Ray ◽  
High Annealing

AbstractGe δ-layers on Si(111) and Si(001), grown by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) were characterized in-situ by high-resolution low-energy electrondiffraction and post-growth by x-ray standing waves. LEED intensity oscillations are used to determine the growth mode of Ge on Si which is found to proceed in a double bilayer fashion for Ge on Si(111). X-ray standing waves are employed to investigate crystal quality of the Ge layer. SPE on Si(111) requires high annealing temperatures (600°C) for sufficient recrystallization of defects in the Ge δ-layer. On Si(001), Ge δ-layers of surprisingly high crystalline quality are grown by solid phase epitaxy at room temperature.

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