The Projectile Mass Dependence of the Amorphization Process and the Critical Temperature in the Ion Irradiated CuTi

1988 ◽  
Vol 100 ◽  
Author(s):  
J. Koike ◽  
P. R. Okamoto ◽  
M. Meshii
Keyword(s):  
Critical Temperature ◽  
Crystallization Temperature ◽  
Damage Zone ◽  
Dose Dependence ◽  
Mass Dependence ◽  
Tandem Accelerator ◽  
Thermal Crystallization ◽  
Integrated Intensity ◽  
Amorphous Zone ◽  
Crystalline Matrix

ABSTRACTCuTi was irradiated with 1MeV Ne+ and Kr+ at various temperatures in the Argonne-HVEM interfaced to a tandem accelerator. The integrated intensity of diffuse ring was measured by a microdensitometer and analyzed by Gibbons model for the dose dependence of the amorphous volume. The results indicate that the direct amorphization occurs in a single damage zone with Kr+, but the overlapping of three damage zones is necessary with Ne+. The critical temperature for amorphization was 401±22K for Ne+ and 543±20K for Kr+, respectively. With Kr+, the critical temperature was nearly equal to the thermal crystallization temperature of an amorphous zone embedded in the crystalline matrix. Using the present observations, the relation between the amorphization process and the critical temperature is discussed.

The dose, temperature, and projectile-mass dependence for irradiation-induced amorphization of CuTi

1989 ◽  
Vol 4 (5) ◽  
pp. 1143-1150 ◽  
Author(s):  
J. Koike ◽  
P. R. Okamoto ◽  
L. E. Rehn ◽  
M. Meshii
Keyword(s):  
Critical Temperature ◽  
Volume Fraction ◽  
Critical Temperatures ◽  
Ion Tracks ◽  
Temperature Irradiation ◽  
Integrated Intensity ◽  
Diffraction Patterns ◽  
Amorphous Zone ◽  
The Stability ◽  
Crystalline Matrix

CuTi was irradiated with 1-MeV Ne+, Kr+, and Xe+ in the temperature range from 150 to 563 K. The volume fraction of the amorphous phase produced during room temperature irradiation with Ne+ and Kr+ ions was determined as a function of ion dose from measurements of the integrated intensity of the diffuse ring in electron diffraction patterns. The results, analyzed by Gibbons' model, indicate that direct amorphization occurs along a single ion track with Kr+, but the overlapping of three ion tracks is necessary for amorphization with Ne+. The critical temperature for amorphization increases with increasing projectile mass from electron to Ne+ to Kr+. However, the critical temperatures for Kr+ and Xe+ irradiations were found to be identical, and very close to the thermal crystallization temperature of an amorphous zone embedded in the crystalline matrix. Using the present observations, relationships between the amorphization kinetics and the displacement density along the ion track, and between the critical temperature and the stability of the irradiation-induced damage, are discussed.

Defect Formation and Hydrogen Trapping in H+ Implanted FZ Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
W. J. Choyke ◽  
J. A. Spitznagel ◽  
N. J. Doyle ◽  
S. Wood ◽  
R. B. Irwin
Keyword(s):  
Defect Formation ◽  
Damage Zone ◽  
Dislocation Loops ◽  
Hydrogen Trapping ◽  
Temperature Dependent ◽  
Ion Channeling ◽  
Float Zone ◽  
Transmission Electron ◽  
Amorphous Zone ◽  
Post Implantation

ABSTRACTThe formation and annealing of buried damage layers in hydrogen implanted N-type float zone <111> silicon has been studied by Rutherford Backscattering/ion channeling and cross-section transmission electron microscopy. Implantation with 50 keV or 75 keV H+ ions was conducted at temperatures of 95K, 300K and 800K at fluences of 2×1017 H+/cm2, 8×1017 H+/cm2 and 1×1018 H+/cm2. Post implantation annealing was conducted at temperatures up to 800K. The results show a temperature dependent transition from a highly hydrogen doped amorphous zone bounded by strongly diffracting (TEM) 2–5 nm diameter defects for implantation at 95K to a crystalline microstructure containing small dislocation loops and ∼40% of the implanted hydrogen for implantation at 300K. Defect production and annealing and hydrogen trapping in the damage zone are shown to depend on the relative implantation and post implantation annealing temperatures.

A Phenomenological Model for the Effect of Nanocrystalline Microstructure on Irradiation-Induced Amorphization In U3Si

1994 ◽  
Vol 373 ◽  
Author(s):  
J. Rest
Keyword(s):  
Critical Temperature ◽  
Grain Boundaries ◽  
Ion Irradiation ◽  
Theory Model ◽  
Rate Theory ◽  
Two Phase ◽  
Thermal Crystallization ◽  
Acoustic Shock Wave ◽  
Radiation Induced ◽  
Nanocrystalline Microstructure

AbstractA rate theory model is formulated wherein amorphous clusters are formed by a damage event. These clusters are considered centers of expansion (CEs), or excess-free-volume zones. Simultaneously, centers of compression (CCs) are created in the material. The CCs are local regions of increased density that travel through the material as an elastic (e.g., acoustic) shock wave. The CEs can be annihilated upon contact with a sufficient number of CCs, to form either a crystallized region indistinguishable from the host material, or a region with a slight disorientation (recrystallized grain). Recrystallized grains grow by the accumulation of additional CCs.Preirradiation of U3Si above the critical temperature for amorphization results in the formation of nanometer-size grains. In addition, subsequent reirradiation of these samples in the same ion flux at temperatures below the critical temperature shows that the material has developed a resistance to radiation-induced amorphization (i.e., a higher dose is needed to amorphize preirradiated samples than those that have not been preirradiated). In the model, it is assumed that grain boundaries act as effective sinks for defects, and that enhanced defect annihilation is responsible for retarding amorphization below the critical temperature by, for example, preventing a buildup of vacancies adjacent to the grain boundaries. The calculations have been validated against data from ion-irradiation experiments with U3Si. For appropriate values of the activation energy of thermal crystallization, the model predicts the evolution of a two phase microstructure consisting of nanocrystalline grains and amorphous clusters.

Automatic measurement of SAED patterns from asbestos minerals

1988 ◽  
Vol 46 ◽  
pp. 846-847
Author(s):  
J. C. Russ ◽  
T. Taguchi ◽  
P. M. Peters ◽  
E. Chatfield ◽  
J. C. Russ ◽  
...  
Keyword(s):  
Diffraction Pattern ◽  
High Precision ◽  
Diffraction Data ◽  
Automatic Measurement ◽  
Automatic Method ◽  
Important Method ◽  
X Ray ◽  
Integrated Intensity ◽  
Asbestiform Minerals ◽  
True Center

Conventional SAD patterns as obtained in the TEM present difficulties for identification of materials such as asbestiform minerals, although diffraction data is considered to be an important method for making this purpose. The preferred orientation of the fibers and the spotty patterns that are obtained do not readily lend themselves to measurement of the integrated intensity values for each d-spacing, and even the d-spacings may be hard to determine precisely because the true center location for the broken rings requires estimation. We have implemented an automatic method for diffraction pattern measurement to overcome these problems. It automatically locates the center of patterns with high precision, measures the radius of each ring of spots in the pattern, and integrates the density of spots in that ring. The resulting spectrum of intensity vs. radius is then used just as a conventional X-ray diffractometer scan would be, to locate peaks and produce a list of d,I values suitable for search/match comparison to known or expected phases.

Structure Information From Electron Diffraction Intensities

1990 ◽  
Vol 48 (2) ◽  
pp. 516-517
Author(s):  
J. Gjønnes ◽  
N. Bøe ◽  
K. Gjønnes
Keyword(s):  
Computational Effort ◽  
Unit Cell ◽  
Small Unit ◽  
Structure Information ◽  
Dispersion Surface ◽  
Integrated Intensity ◽  
The One ◽  
Image Position ◽  
Convergent Beam ◽  
Beam Patterns

Structure information of high precision can be extracted from intentsity details in convergent beam patterns like the one reproduced in Fig 1. From low order reflections for small unit cell crystals,bonding charges, ionicities and atomic parameters can be derived, (Zuo, Spence and O’Keefe, 1988; Zuo, Spence and Høier 1989; Gjønnes, Matsuhata and Taftø, 1989) , but extension to larger unit cell ma seem difficult. The disks must then be reduced in order to avoid overlap calculations will become more complex and intensity features often less distinct Several avenues may be then explored: increased computational effort in order to handle the necessary many-parameter dynamical calculations; use of zone axis intensities at symmetry positions within the CBED disks, as in Figure 2 measurement of integrated intensity across K-line segments. In the last case measurable quantities which are well defined also from a theoretical viewpoint can be related to a two-beam like expression for the intensity profile:With as an effective Fourier potential equated to a gap at the dispersion surface, this intensity can be integrated across the line, with kinematical and dynamical limits proportional to and at low and high thickness respctively (Blackman, 1939).

Electron Beam-Induced Mass Loss in Freeze-Dried Tissue and Protein Samples

1985 ◽  
Vol 43 ◽  
pp. 470-471
Author(s):  
M.E. Cantino ◽  
M.K. Goddard ◽  
L.E. Wilkinson ◽  
D.E. Johnson
Keyword(s):  
Electron Beam ◽  
Salivary Gland ◽  
Mass Loss ◽  
Counting Rate ◽  
Dose Dependence ◽  
X Ray ◽  
Large Samples ◽  
Freeze Dried ◽  
Muscle Homogenate ◽  
Large Muscle

Quantification in biological x-ray microanalysis depends on accurate evaluation of mass loss. Although several studies have addressed the problem of electron beam induced mass loss from organic samples (eg., 1,2). uncertainty persists as to the dose dependence, the extent of loss, the elemental constituents affected, and the variation in loss for different materials and tissues. in the work described here, we used x-ray counting rate changes to measure mass loss in albumin (used as a quantification standard), salivary gland, and muscle.In order to measure mass loss at low doses (10-4 coul/cm2 ) large samples were needed. While freeze-dried salivary gland sections of the required dimensions were available, muscle sections of this size were difficult to obtain. To simulate large muscle sections, frog or rat muscle homogenate was injected between formvar films which were then stretched over slot grids and freeze-dried. Albumin samples were prepared by a similar procedure. using a solution of bovine serum albumin in water. Samples were irradiated in the STEM mode of a JEOL 100C.

EELS white line intensities calculated for the 3d and 4d metals

1989 ◽  
Vol 47 ◽  
pp. 388-389
Author(s):  
C. C. Ahn ◽  
D. H. Pearson ◽  
P. Rez ◽  
B. Fultz
Keyword(s):  
Experimental Data ◽  
Line Intensity ◽  
Transition Probabilities ◽  
Initial Increase ◽  
White Line ◽  
Hartree Fock ◽  
Line Intensities ◽  
Integrated Intensity ◽  
X Ray Absorption ◽  
The Continuum

Previous experimental measurements of the total white line intensities from L2,3 energy loss spectra of 3d transition metals reported a linear dependence of the white line intensity on 3d occupancy. These results are inconsistent, however, with behavior inferred from relativistic one electron Dirac-Fock calculations, which show an initial increase followed by a decrease of total white line intensity across the 3d series. This inconsistency with experimental data is especially puzzling in light of work by Thole, et al., which successfully calculates x-ray absorption spectra of the lanthanide M4,5 white lines by employing a less rigorous Hartree-Fock calculation with relativistic corrections based on the work of Cowan. When restricted to transitions allowed by dipole selection rules, the calculated spectra of the lanthanide M4,5 white lines show a decreasing intensity as a function of Z that was consistent with the available experimental data.Here we report the results of Dirac-Fock calculations of the L2,3 white lines of the 3d and 4d elements, and compare the results to the experimental work of Pearson et al. In a previous study, similar calculations helped to account for the non-statistical behavior of L3/L2 ratios of the 3d metals. We assumed that all metals had a single 4s electron. Because these calculations provide absolute transition probabilities, to compare the calculated white line intensities to the experimental data, we normalized the calculated intensities to the intensity of the continuum above the L3 edges. The continuum intensity was obtained by Hartree-Slater calculations, and the normalization factor for the white line intensities was the integrated intensity in an energy window of fixed width and position above the L3 edge of each element.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Scanning Transmission Electron Microscopy of Polyethylene Crystals

1980 ◽  
Vol 38 ◽  
pp. 242-245
Author(s):  
F. Khoury ◽  
L. H. Bolz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallization Temperature ◽  
Scanning Transmission Electron Microscopy ◽  
Growth Habit ◽  
Lateral Growth ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Growth Habits

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

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