Silicon Oxide Composite Film Fabricated by Wet Process at Low Temperature as a Passivation Layer for Printable Electric Device

2008 ◽  
Vol 1113 ◽  
Author(s):  
Sei Uemura ◽  
Kouji Suemori ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Composite Film ◽  
Silicon Oxide ◽  
Low Cost ◽  
Passivation Layer ◽  
Large Area ◽  
Passivation Film ◽  
Wet Process ◽  
Electric Device

ABSTRACTPrintable devices have been attracting considerable interest because of their application to flexible large-area devices in low cost printable electronics. In order to fabricate such devices, it is necessary to discover a passivation film and develop an efficient process for its preparation. We have previously reported that silicone oxide film is obtained with high density by UV irradiation to silazane compound film at low temperature [1]. The silicon oxide film has electric resistivity more than 10−15 Ωcm and electric strength more than 7 MV/cm. In order to apply the film to passivation layer in printable device, in this paper, preparation of nano-composite film with silicon oxide and clay mineral was investigated.

scholarly journals Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 799 ◽  
Author(s):  
Mariana Fraga ◽  
Rodrigo Pessoa
Keyword(s):  
Low Temperature ◽  
Low Cost ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Nanoelectromechanical Systems ◽  
Large Area ◽  
Scientific Publications ◽  
Continuous Growth ◽  
Layer Deposition ◽  
Sic Films

A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

scholarly journals Passivation of Silicon Oxide Film Deposited at Low Temperature by Annealing in Nitrogen Ambient

2006 ◽  
Vol 19 (4) ◽  
pp. 334-338
Author(s):  
Jun-Sik Kim ◽  
Ho-Kyoon Chung ◽  
Byoung-Deog Choi ◽  
Ki-Yong Lee ◽  
Jun-Sin Yi
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Silicon Oxide ◽  
Silicon Oxide Film

Dye-Sensitized Solar Cells Built on Plastic Substrates by Low-Temperature Preparation of Semiconductor Films

2010 ◽  
Vol 451 ◽  
pp. 1-19 ◽  
Author(s):  
Tsutomu Miyasaka
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Low Cost ◽  
Dye Sensitized Solar Cells ◽  
Semiconductor Films ◽  
Large Area ◽  
Plastic Substrates ◽  
Dye Sensitized ◽  
Low Temperature Preparation ◽  
Plastic Solar Cells

Printable materials and technologies to realize low-cost dye-sensitized solar cell fabricated on thin plastic substrates are reviewed. Mesoscopic conductive materials and pastes that enable low-temperature coating of electrochemically active films for photoanode and conterelectrode are described in aspects of material preparation, electrochemical and photovoltaic behavior, and stability of the plastic electrode. Performance of plastic solar cells and modules are discussed with respects to the structure and thickness of the non-sintered mesoporous films, light-harvesting functions of dyes, and optimization of electrolyte compositions. Commercial advantages of the lightweight, flexible cell in power generation are also introduced based on proof-of-concept tests with large-area modules.

High Quality Poly-Si Film and Transistor Formed by Nickel-Induced- Lateral-Crystallization and Pulsed-Rapid-Thermal-Annealing

2001 ◽  
Vol 685 ◽  
Author(s):  
T.C. Leung ◽  
C.F. Cheng ◽  
M.C. Poon
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Low Cost ◽  
Drain Current ◽  
Large Area ◽  
High Quality ◽  
Lateral Crystallization ◽  
Si Films

AbstractNickel Induced Lateral Crystallization (NILC) and Pulsed Rapid Thermal Annealing (PRTA) have been used to study new low temperature and high quality poly-silicon (poly-Si) films and thin film transistors (TFTs). The growth rate of poly-Si films has been found to greatly increase from 0.025μm/minute to 1.07μm/minute, and the drain current and performance of TFTs have increased by around 75%. The new poly-Si technology has good potential to apply in high performance, large area, fast throughput, low cost and even low temperature device applications.

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