Improvements of Thermoelectric Performances in AgSbTe2 System With in-situ Ag2Te Nano-Precipitations

2010 ◽  
Vol 1267 ◽  
Author(s):  
Shengnan Zhang ◽  
Shenghui Yang ◽  
Guangyu Jiang ◽  
Junjie Shen ◽  
Tiejun Zhu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
State Of The Art ◽  
Critical Component ◽  
Energy Filtering ◽  
Transmission Electron ◽  
Filtering Effect ◽  
The Relationship

AbstractAgSbTe2 is the critical component in both LAST-m and TAGS-x system, which are two state-of-the-art mid-temperature thermoelectric bulk nanocomposites. By adjusting the Ag2Te/Sb2Te3 ratio, Sb2Te3 and Ag2Te precipitated samples were obtained with x = 0.68 to 0.74 and x = 0.84 to 0.90 (x as in (Ag2Te)x/2(Sb2Te3)1-x/2), respectively. The single phased AgSbTe2 was obtained with the x value of 0.78 and 0.81, which is consistent of the previous results on the phase diagram of (Ag2Te)x(Sb2Te3)1-x system. Comparing the effect of the two different precipitates, Ag2Te are much effective for the improvements of thermoelectric properties in AgSbTe2 nanocomposites. Utilizing the high-resolution transmission electron microscopy, Ag2Te was observed as nanodots and nano-lamellae embedded in the AgSbTe2 matrix, which can be related to the energy filtering effect for the increase of Seebeck coefficient. The relationship among the composition, microstructure and thermoelectric properties was systematically studied. It can be noticed that the thermoelectric properties of AgSbTe2 system are very sensitive to the composition, especially at low temperature. The maximum figure of merit ZT value of 1.53 was obtained at 500 K for Ag0.84Sb1.16Te2.16 with 40% increase comparing with the single phased sample.

Silica and Silane Coupling Agent for in Situ Reinforcement of Acrylonitrile-Butadiene Rubber

1999 ◽  
Vol 72 (1) ◽  
pp. 119-129 ◽  
Author(s):  
K. Murakami ◽  
S. Osanai ◽  
M. Shigekuni ◽  
S. Iio ◽  
H. Tanahashi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Sol Gel ◽  
Silica Particles ◽  
Butadiene Rubber ◽  
Acrylonitrile Butadiene Rubber ◽  
In Situ Silica ◽  
Transmission Electron ◽  
Dispersion Agent ◽  
The Relationship

Abstract In situ silica reinforcement for the acrylonitrile-butadiene rubber (NBR) vulcanizates, which were premixed with a conventional silica (VN-3) and γ-mercaptopropyltrimethoxysilane (γ-MPS), was achieved by the sol-gel reaction of tetraethoxysilane (TEOS) using ethylenediamine. It was observed that the reinforcement efficiency tended to increase with the increase of mechanically premixed conventional silica. From the observations of transmission electron microscopy and scanning electron microscopy, the simultaneous use of VN-3 and γ-MPS was found to promote the formation of large silica particles and clusters with a relatively good dispersion by the sol-gel reaction of TEOS in the NBR vulcanizate. The results of hysteresis measurements supported this promotion. It was considered to be due to the surface modification of VN-3 by the sol-gel reaction of TEOS and the presence of γ-MPS which worked as a dispersion agent for silica particles. The relationship between the mechanical properties and the morphology of the in situ silica filled vulcanizates is discussed.

scholarly journals Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi2Te3 matrix

2019 ◽  
Vol 10 ◽  
pp. 634-643 ◽  
Author(s):  
Srashti Gupta ◽  
Dinesh Chandra Agarwal ◽  
Bathula Sivaiah ◽  
Sankarakumar Amrithpandian ◽  
Kandasami Asokan ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Transmission Electron ◽  
High Power Factor ◽  
Different Temperatures ◽  
High Figure ◽  
Filtering Effect ◽  
P Type ◽  
20 Nm

The present study aims to see the enhancement in thermoelectric properties of bismuth telluride (Bi2Te3) annealed at different temperatures (573 and 773 K) through silver (Ag) nano-inclusions (0, 2, 5, 10, 15 and 20 wt %). Transmission electron microscopy (TEM) images of Ag incorporated in Bi2Te3 annealed at 573 K shows tubular, pentagonal, trigonal, circular and hexagonal nanoparticles with sizes of 6–25 nm (for 5 wt % Ag ) and 7–30 nm (for 20 wt % Ag). Ag incorporated in Bi2Te3 annealed at 773 K shows mainly hexagonally shaped structures with particle sizes of 2–20 nm and 40–80 nm (for 5 wt % Ag) and 10–60 nm (for 20 wt % Ag). Interestingly, the samples annealed at 573 K show the highest Seebeck coefficient (S, also called thermopower) at room temperature (p-type behavior) for 5% Ag which is increased ca. five-fold in comparison to Ag-free Bi2Te3, whereas for samples with the same content (5% Ag) annealed at 773 K the increment in thermopower is only about three-fold with a 6.9-fold enhancement of the power factor (S 2σ). The effect of size and shape of the nanoparticles on thermoelectric properties can be understood on the basis of a carrier-filtering effect that results in an increase in thermopower along with a control over the reduction in electrical conductivity to maintain a high power factor yielding a high figure of merit.

Crystal structure and thermoelectric properties of ReSi1.75 silicide

2002 ◽  
Vol 753 ◽  
Author(s):  
J-J Gu ◽  
K. Kuwabara ◽  
K. Tanaka ◽  
H. Inui ◽  
M. Yamaguchi ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Figure Of Merit ◽  
First Principles Calculation ◽  
Dimensionless Figure Of Merit ◽  
Transmission Electron ◽  
P Type ◽  
Very High

ABSTRACTThe crystal structure of the defect disilicide formed with Re (ReSi1.75) has been refined by transmission electron microscopy combined with first-principles calculation. The crystal structure is monoclinic with the space group Cm (mc44) due to an ordered arrangement of vacancies on Si sites in the underlying (parent) C11b lattice. The thermoelectric properties of ReSi1.75 are highly anisotropic. Its electrical conduction is of n-type when measure along [001] while it is of p-type when measured along [100]. Although the value of Seebeck coefficient along [100] is moderately high (150–200 μV/K), it is very high along [001] (250–300 μV/K). As a result, a very high value of dimensionless figure of merit (ZT) of 0.7 is achieved at 1073 K when measured along [001].

Effects of Antimony on the Thermoelectric Properties of the Cubic Pb9.6SbyTe10−xSexMaterials

2005 ◽  
Vol 886 ◽  
Author(s):  
Pierre Ferdinand Poudeu Poudeu ◽  
Jonathan D'Angelo ◽  
Adam Downey ◽  
Robert Pcionek ◽  
Joseph Sootsman ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Low Thermal Conductivity ◽  
Intermediate Temperature Range ◽  
Transmission Electron

ABSTRACTThe thermoelectric properties of Pb9.6SbyTe10−xSexwere investigated in the intermediate temperature range of 300 – 700 K. The effect of the variation of Sb content (y) on the electronic properties of the materials is remarkable. Samples with compositions Pb9.6Sb0.2Te10−xSex(y = 0.2) show the best combination of low thermal conductivity with moderate electrical conductivity and thermopower. For Pb9.6Sb0.2Te8Se2(x = 2) a maximum figure of merit of ZT ∼ 1.1 was obtained around 700 K. This value is nearly 1.4 times higher than that of PbTe at 700 K. This enhancement of the figure of merit of Pb9.6Sb0.2Te8Se2derives from its extremely low thermal conductivity (∼0.7 at W/m.K at 700 K). High resolution transmission electron microscopy of Pb9.6Sb0.2Te10−xSexsamples shows broadly distributed Sb-rich nanocrystals, which may be the key feature responsible for the suppression of the thermal conductivity.

Behavior of Heavy Plastic Deformation of Cu-15Cr-0.1Zr In Situ Composite

2009 ◽  
Vol 79-82 ◽  
pp. 2191-2194
Author(s):  
Yan Li ◽  
Xiao Hong Chen ◽  
Ping Liu ◽  
Lin Hua Gao ◽  
Bao Hong Tian
Keyword(s):  
Electron Microscopy ◽  
Plastic Deformation ◽  
Cold Drawing ◽  
Degree Of Deformation ◽  
Transmission Electron ◽  
Fibrous Morphology ◽  
Two Phases ◽  
Relationship Of ◽  
The Relationship

The behavior of plastic deformation of Cu-15Cr-0.1Zr in-situ composite under different degree of cold drawing deformation was analyzed by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that both Cu and Cr phases are elongated along cold drawn direction and appear a fibrous morphology; However, Cu phase shows a thread-like fibrous morphology and Cr phase shows a band-like fibrous morphology. The two phases have a coherent relationship of (111)Cu //(011)Cr; When the degree of deformation(ε)is equal to 6.43, the relationship shows// [111]Cu // [110]Cr //cold drawn direction. Furthermore, forming two different morphologies of Cu and Cr phases during cold drawing is also analyzed.

In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

Profile Imaging of Silicon Surface Reconstructions

1985 ◽  
Vol 43 ◽  
pp. 262-263
Author(s):  
O.L. Krivanek ◽  
G.J. Wood
Keyword(s):  
Electron Microscopy ◽  
Surface Structure ◽  
Structure Determination ◽  
Silicon Surface ◽  
Good Resolution ◽  
Surface Reconstructions ◽  
Bulk Structure ◽  
Point To Point ◽  
The Relationship

Electron microscopy at 0.2nm point-to-point resolution, 10-10 torr specimei region vacuum and facilities for in-situ specimen cleaning presents intere; ing possibilities for surface structure determination. Three methods for examining the surfaces are available: reflection (REM), transmission (TEM) and profile imaging. Profile imaging is particularly useful because it giv good resolution perpendicular as well as parallel to the surface, and can therefore be used to determine the relationship between the surface and the bulk structure.

The use of an energy-filtering electron microscope to reduce chromatic aberration in images of thick biological specimens

1986 ◽  
Vol 44 ◽  
pp. 88-91
Author(s):  
L. D. Peachey ◽  
J. P. Heath ◽  
G. Lamprecht
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Cross Section ◽  
Electron Scattering ◽  
Chromatic Aberration ◽  
Image Resolution ◽  
Incident Electron Energy ◽  
Energy Filtering ◽  
Transmission Electron

Biological specimens of cells and tissues generally are considerably thicker than ideal for high resolution transmission electron microscopy. Actual image resolution achieved is limited by chromatic aberration in the image forming electron lenses combined with significant energy loss in the electron beam due to inelastic scattering in the specimen. Increased accelerating voltages (HVEM, IVEM) have been used to reduce the adverse effects of chromatic aberration by decreasing the electron scattering cross-section of the elements in the specimen and by increasing the incident electron energy.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

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