Conducting Polymer Films by Ion Implantation

1989 ◽  
Vol 154 ◽  
Author(s):  
P.H. Lu ◽  
R.A. Moody ◽  
I.H. Loh
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Changes ◽  
Ion Beam ◽  
Beam Current ◽  
Beam Current Density ◽  
Electrically Conductive ◽  
Energy Beam ◽  
Ion Beam Modification ◽  
Spin Resonance

AbstractInsulating polymeric sheets were made electrically conductive by ion implantation. The effects of implantation parameters, such as ion species, dose, energy, beam current density, and substrate temperature, on the resultant sheet resistivities were investigated. Surface structural changes of implanted polymers were evaluated by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and Fourier transform infared spectroscopy (FTIR). Electron spin resonance (ESR) and temperature dependent resistivity measurements were performed to explore the conduction mechanisms of implanted polymers. The results indicate that ion beam modification of polymers proceeds via a similar mechanism as high temperature pyrolysis. The resultant carbon-enriched materials which can be described by the conducting grain model.

scholarly journals A Review of Ion Implantation Technology for Image Sensors †

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2358 ◽  
Author(s):  
Nobukazu Teranishi ◽  
Genshu Fuse ◽  
Michiro Sugitani
Keyword(s):  
Ion Implantation ◽  
Metal Contamination ◽  
Technology Development ◽  
Irradiation Time ◽  
Ion Beam ◽  
Beam Current ◽  
Image Sensors ◽  
Beam Current Density ◽  
Plasma Generation ◽  
Protection Layer

Ion implantation technology is reviewed mainly from the viewpoint of image sensors, which play a significant role in implantation technology development. Image sensors are so sensitive to metal contamination that they can detect even one metal atom per pixel. To reduce the metal contamination, the plasma shower using RF (radio frequency) plasma generation is a representative example. The electrostatic angular energy filter after the mass analyzing magnet is a highly effective method to remove energetic metal contamination. The protection layer on the silicon is needed to protect the silicon wafer against the physisorbed metals. The thickness of the protection layer should be determined by considering the knock-on depth. The damage by ion implantation also causes blemishes. It becomes larger in the following conditions if the other conditions are the same; a. higher energy; b. larger dose; c. smaller beam size (higher beam current density); d. longer ion beam irradiation time; e. larger ion mass. To reduce channeling, the most effective method is to choose proper tilt and twist angles. For P+ pinning layer formation, the low-energy B+ implantation method might have less metal contamination and damage, compared with the BF2+ method.

scholarly journals Nanostructures on Sapphire Surfaces Induced by Metal Impurity Assisted Ion Beam

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 949 ◽  
Author(s):  
Qian Bi ◽  
Zhili Chen ◽  
Yuzhao Liu ◽  
Li Tang ◽  
Yingxue Xi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Beam Current ◽  
Beam Current Density ◽  
Angle Of Incidence ◽  
Ion Beam Sputtering ◽  
Metal Impurity ◽  
Metal Impurities ◽  
Ripple Formation ◽  
Beam Sputtering

The metal impurity assisted ion beam technology has shown its uniqueness and effectiveness in the formation and precise control of nanostructures on the surface of materials. Hence, the investigation in this area is vital. The morphology evolution of self-organized nanostructures induced by Fe co-deposition assisted Ar+ ion beam sputtering at a different distance from the impurity target was investigated on sapphire, using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). We also investigated the role of metal impurities on sapphire ripple formation. Experiments were carried out at an oblique angle of incidence 65° with constant ion beam current density 487 μA/cm2 and the erosion duration of 60 min at room temperature (20 °C). The introduction of Fe impurity increased the longitudinal height and roughness of the surface nanostructures. Moreover, the amounts of Fe deposited on the surface decreased with increasing distance, and the morphology of the smooth sapphire surface demonstrated a strong distance dependence. Differences in surface morphology were attributed to changes in metal impurity concentration. With an increase of impurity target distance, island-like structures gradually evolved into continuous ripples. At the same time, the orderliness of nanostructures was enhanced, the longitudinal height gradually decreased, while the spatial frequency was unchanged. In addition, there were very few metal impurities on the etched sample. During the ion beam sputtering process, island-like structures promoted the growth of ripples but destroyed their orderliness.

Effects of Beam Current Density on Ion Beam Synthesis OF SiC

2001 ◽  
Vol 680 ◽  
Author(s):  
D.H. Chen ◽  
S.P. Wong ◽  
J.K.N. Lindner
Keyword(s):  
Current Density ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Metal Vapor ◽  
Beam Current ◽  
Ion Source ◽  
Vacuum Arc ◽  
Beam Current Density ◽  
Carbon Clusters ◽  
High Dose

ABSTRACTThin SiC layers were synthesized by high dose C implantation into silicon using a metal vapor vacuum arc ion source at various conditions. Characterization of the ion beam synthesized SiC layers was performed using various techniques including x-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) absorption, and Raman spectroscopy. The XPS results showed that for samples with over-stoichiometric implant doses, if the implant beam current density was not high enough, even after prolonged thermal annealing at high temperatures, the as-implanted gaussian-like carbon depth profile remained unchanged. However, if the implant beam current density was sufficiently high, there was significant carbon redistribution during annealing, so that a thicker stoichiometric SiC layer can be formed after annealing. The XPS and Raman results also showed that there were carbon clusters formed in the as-implanted layers for the low beam current density implanted samples, while the formation of such carbon clusters was minimal in the high beam current density as-implanted samples. The effect of beam current density on the fraction of different bonding states of the implanted carbon atoms was studied.

Alloy surface composition resulting from fabrication, as determined by s.i.m.s. (secondary ion mass spectrometry)

1980 ◽  
Vol 295 (1413) ◽  
pp. 134-135
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Surface Composition ◽  
Ion Beam ◽  
Sample Surface ◽  
Beam Current ◽  
Ion Source ◽  
Beam Current Density ◽  
Dynamic Mode ◽  
Static Mode ◽  
Subsequent Performance

In s.i.m.s. the sample surface is ion bombarded and the emitted secondary ions are mass analysed. When used in the static mode with very low primary ion beam current densities (10 -11 A/mm 2 ), the technique analyses the outermost atomic layers with the following advantages (Benninghoven 1973, I975): the structural—chemical nature of the surface may be deduced from the masses of the ejected ionized clusters of atoms; detection of hydrogen and its compounds is possible; sensitivity is extremely high (10 -6 monolayer) for a number of elements. Composition profiles are obtained by increasing the primary beam current density (dynamic mode) or by combining the technique in the static mode with ion beam machining with a separate, more powerful ion source. The application of static s.i.m.s. in metallurgy has been explored by analysing a variety of alloy surfaces after fabrication procedures in relation to surface quality and subsequent performance. In a copper—silver eutectic alloy braze it was found that the composition of the solid surface depended markedly on its pretreatment. Generally there was a surface enrichment of copper relative to silver in melting processes while sawing and polishing enriched the surface in silver

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Microstructural Observation of Focused Ion Beam Modification of Ni Silicide/Si Thin Films

1996 ◽  
Vol 439 ◽  
Author(s):  
Miyoko Tanaka ◽  
Kazuo Furuya ◽  
Tetsuya Saito
Keyword(s):  
Structural Changes ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dark Field ◽  
In Situ Tem ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
Surrounding Matrix ◽  
Transmission Electron

AbstractFocused ion beam (FIB) irradiation of a thin Ni2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 μm were patterned at room temperature with a 25keV Ga+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling; sputtering of the Ni2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni2Si layer into an epitaxial NiSi2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the precipitation is indicated.

Controlled Formation of Buried Layers of Carbon

1994 ◽  
Vol 349 ◽  
Author(s):  
D. Ila ◽  
R. L. Zimmerman ◽  
G. M. Jenkins
Keyword(s):  
Crack Formation ◽  
Ion Beam ◽  
Beam Current ◽  
Curing Temperature ◽  
Beam Current Density ◽  
Inert Environment ◽  
Heat Treated ◽  
Nitrogen Ions ◽  
Buried Layers

ABSTRACTPartially cured and cured PF-resin samples were prepared at 150°C, 170°C and at 200°C in an inert environment and then bombarded by MeV ion beams using protons, alphas and nitrogen. Using low ion beam current density, 100 to 500 pA/mm2 for the nitrogen ions, 10 to 20 nA/mm2 for the alpha ions, and 50 to 500 nA/mm2 for protons, we have produced buried carbon layers without breakdown i.e., crack formation. The thicknesses of the carbon layers produced were of the order of a few tens of nanometers at a depth of a few nanometers to several micrometers depending on the energy, the type of bombarding ions and the curing temperature of the precursor. The electrical resistivity of these layers was measured in situ and was reduced from 109 Ω-cm to 10 Ω-cm. The lowest resistivity, 10 Ω-cm, was measured in the alpha bombarded, 150°C heat-treated resin. The carbonized volumes were analyzed by Raman microprobe spectroscopy which showed that the strongest graphitic (G-line) and distorted (D-line) Raman signals observed were from the nitrogen and alpha irradiated samples.

A Correlation Study between XPS and AES Quantitative Analysis of Nitrogen Concentration in Gate Oxide

2004 ◽  
Author(s):  
LinFeng Wu ◽  
Ming Li ◽  
J.H. Lee ◽  
Jecy Zhou ◽  
Chorng Niou ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Gate Oxide ◽  
Beam Current ◽  
Correlation Study ◽  
Energy Beam ◽  
Auger Electron Spectroscopy Data ◽  
Measurement Results ◽  
Corrective Factor

Abstract Accurate characterization of the nitrogen concentration and distribution in ultra thin nitrided silicon gate oxide plays the same important role as the fabrication technology itself during the development of 90nm and beyond gate oxide manufacturing process. Based on the measurement results of XPS (X-ray photoelectron spectroscopy) as reference, a correlation study was taken between XPS and AES (Auger electron spectroscopy) data in this paper. The study shows that, by optimizing the experiment conditions of AES such as beam energy, beam current and take off angle, and introducing proper corrective factor, AES can be used as a useful and reliable characterization tool during the monitoring measurement of Nitrogen concentration in ultra thin (<2nm) nitrided silicon gate oxide.

Sign in / Sign up

Export Citation Format

Share Document