A Correlation Study between XPS and AES Quantitative Analysis of Nitrogen Concentration in Gate Oxide

2004 ◽  
Author(s):  
LinFeng Wu ◽  
Ming Li ◽  
J.H. Lee ◽  
Jecy Zhou ◽  
Chorng Niou ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Gate Oxide ◽  
Beam Current ◽  
Correlation Study ◽  
Energy Beam ◽  
Auger Electron Spectroscopy Data ◽  
Measurement Results ◽  
Corrective Factor

Abstract Accurate characterization of the nitrogen concentration and distribution in ultra thin nitrided silicon gate oxide plays the same important role as the fabrication technology itself during the development of 90nm and beyond gate oxide manufacturing process. Based on the measurement results of XPS (X-ray photoelectron spectroscopy) as reference, a correlation study was taken between XPS and AES (Auger electron spectroscopy) data in this paper. The study shows that, by optimizing the experiment conditions of AES such as beam energy, beam current and take off angle, and introducing proper corrective factor, AES can be used as a useful and reliable characterization tool during the monitoring measurement of Nitrogen concentration in ultra thin (<2nm) nitrided silicon gate oxide.

Conducting Polymer Films by Ion Implantation

1989 ◽  
Vol 154 ◽  
Author(s):  
P.H. Lu ◽  
R.A. Moody ◽  
I.H. Loh
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Changes ◽  
Ion Beam ◽  
Beam Current ◽  
Beam Current Density ◽  
Electrically Conductive ◽  
Energy Beam ◽  
Ion Beam Modification ◽  
Spin Resonance

AbstractInsulating polymeric sheets were made electrically conductive by ion implantation. The effects of implantation parameters, such as ion species, dose, energy, beam current density, and substrate temperature, on the resultant sheet resistivities were investigated. Surface structural changes of implanted polymers were evaluated by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and Fourier transform infared spectroscopy (FTIR). Electron spin resonance (ESR) and temperature dependent resistivity measurements were performed to explore the conduction mechanisms of implanted polymers. The results indicate that ion beam modification of polymers proceeds via a similar mechanism as high temperature pyrolysis. The resultant carbon-enriched materials which can be described by the conducting grain model.

scholarly journals A Review of Strategies for the Synthesis of N-Doped Graphene-Like Materials

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2286
Author(s):  
Alenka Vesel ◽  
Rok Zaplotnik ◽  
Gregor Primc ◽  
Miran Mozetič
Keyword(s):  
Photoelectron Spectroscopy ◽  
Treatment Time ◽  
Nitrogen Concentration ◽  
Preferential Formation ◽  
Plasma Treatment Time ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene ◽  
Electrochemical Devices ◽  
Significant Attention

Methods for synthesizing nitrogen-doped graphene-like materials have attracted significant attention among the scientific community because of the possible applications of such materials in electrochemical devices such as fuel cells, supercapacitors and batteries, as well as nanoelectronics and sensors. The aim of this paper is to review recent advances in this scientific niche. The most common synthesis technique is nitridization of as-deposited graphene or graphene-containing carbon mesh using a non-equilibrium gaseous plasma containing nitrogen or ammonia. A variety of chemical bonds have been observed, however, it is still a challenge how to ensure preferential formation of graphitic nitrogen, which is supposed to be the most favorable. The nitrogen concentration depends on the processing conditions and is typically few at.%; however, values below 1 and up to 20 at.% have been reported. Often, huge amounts of oxygen are found as well, however, its synergistic influence on N-doped graphene is not reported. The typical plasma treatment time is several minutes. The results reported by different authors are discussed, and future needs in this scientific field are summarized. Some aspects of the characterization of graphene samples with X-ray photoelectron spectroscopy and Raman spectroscopy are presented as well.

Characterization and Elimination of Forward Snapback Defects in GaAs Light Emitting Diodes

1996 ◽  
Author(s):  
J. Zimmer ◽  
D. Nielsen ◽  
T.A. Anderson ◽  
M. Schade ◽  
N. Saha ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Light Emitting Diode ◽  
Elevated Concentration ◽  
Forward Voltage ◽  
Light Emitting ◽  
Intermittent Yield ◽  
Si Doped ◽  
Secondary Ion ◽  
Furnace Pressure

Abstract The p-n junction of a GaAs light emitting diode is fabricated using liquid phase epitaxy (LPE). The junction is grown on a Si doped (~1018/cm3) GaAs substrate. Intermittent yield loss due to forward voltage snapback was observed. Historically, out of specification forward voltage (Vf) parameters have been correlated to abnormalities in the junction formation. Scanning electron (SEM) and optical microscopy of cleaved and stained samples revealed a continuous layer of material approximately 2.5 to 3.0 urn thick at the n-epi/substrate interface. Characterization of a defective wafer via secondary ion mass spectroscopy (SIMS) revealed an elevated concentration of O throughout the region containing the defect. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) data taken from a wafer prior to growth of the epi layers did not reveal any unusual oxidation or contamination. Extensive review of the processing data suggested LPE furnace pressure was the obvious source of variability. Processing wafers through the LPE furnace with a slight positive H2 gas pressure has greatly reduced the occurrence of this defect.

Physical Failure Analysis Techniques for Front-End-of-Line Defect Analysis

2016 ◽  
Author(s):  
Dirk Doyle ◽  
Lawrence Benedict ◽  
Fritz Christian Awitan
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gate Oxide ◽  
Top Down ◽  
New Techniques ◽  
First Case ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

scholarly journals Simultaneous Kinetics of Selenite Oxidation and Sorption on δ-MnO2 in Stirred-Flow Reactors

2021 ◽  
Vol 18 (6) ◽  
pp. 2902
Author(s):  
Zheyong Li ◽  
Yajun Yuan ◽  
Lin Ma ◽  
Yihui Zhang ◽  
Hongwei Jiang ◽  
...  
Keyword(s):  
Rate Constant ◽  
Photoelectron Spectroscopy ◽  
Oxide Surfaces ◽  
Kinetic Rate Constant ◽  
Flow Reactors ◽  
Mn Oxide ◽  
Remediation Strategies ◽  
Process Of Se ◽  
Kinetics Of

Selenium (Se) is an essential and crucial micronutrient for humans and animals, but excessive Se brings negativity and toxicity. The adsorption and oxidation of Se(IV) on Mn-oxide surfaces are important processes for understanding the geochemical fate of Se and developing engineered remediation strategies. In this study, the characterization of simultaneous adsorption, oxidation, and desorption of Se(IV) on δ-MnO2 mineral was carried out using stirred-flow reactors. About 9.5% to 25.3% of Se(IV) was oxidized to Se(VI) in the stirred-flow system in a continuous and slow process, with the kinetic rate constant k of 0.032 h−1, which was significantly higher than the apparent rate constant of 0.0014 h−1 obtained by the quasi-level kinetic fit of the batch method. The oxidation reaction was driven by proton concentration, and its rate also depended on the Se(IV) influent concentration, flow rate, and δ-MnO2 dosage. During the reaction of Se(IV) and δ-MnO2, Mn(II) was produced and adsorbed strongly on Mn oxide surfaces, which was evidenced by the total reflectance Fourier transform infrared (ATR-FTIR) results. The X-ray photoelectron spectroscopy (XPS) data indicated that the reaction of Se(VI) on δ-MnO2 produced Mn(III) as the main product. These results contribute to a deeper understanding of the interface chemical process of Se(IV) with δ-MnO2 in the environment.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Monitoring and characterization of creation of geopolymers prepared from fly ash and metakaolin by X-ray photoelectron spectroscopy method

2014 ◽  
Vol 34 (3) ◽  
pp. 841-849 ◽  
Author(s):  
M. Kanuchova ◽  
L. Kozakova ◽  
M. Drabova ◽  
M. Sisol ◽  
A. Estokova ◽  
...  
Keyword(s):  
Fly Ash ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Method ◽  
X Ray

Characterization of columns grown during KrF laser micromachining of Al2O3–TiC ceramics

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Laser Pulses ◽  
Formation Mechanisms ◽  
X Ray ◽  
Reducing Conditions ◽  
Transmission Electron ◽  
Column Formation ◽  
Krf Laser

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.

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