Solid Phase Epitaxy of Strained Si1−xGex Alloys Formed by Highdose Ion Implantation into Silicon

1990 ◽  
Vol 187 ◽  
Author(s):  
D. J. Howard ◽  
D. C. Paine ◽  
N. G. Stoffel
Keyword(s):  
Ion Implantation ◽  
Strain Energy ◽  
Critical Strain ◽  
Solid Phase ◽  
Stacking Faults ◽  
New Method ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Si Wafer

AbstractIn this paper we propose a new method for the synthesis of Si1−xGex strained-layer alloys using high-dose ion implantation of 74Ge at 200 keV into a preamorphized <001> Si wafer followed by solid phase epitaxy (SPE). Cross-sectional TEM was performed on samples at various stages of regrowth which revealed the evolution of the amorphous/crystalline interface and the development of strain relieving defects during SPE. We report that stacking faults are kinetically favored during SPE of Si1−xGex but are energetically feasible only above a critical strain energy. We propose a model that is based on the well known Matthews and Blakeslee approach which predicts the onset of stacking faults during SPE of high-dose ion implant-synthesized Si1−xGex/Si.

High Dose Ion Implantation for the Synthesis of Si1−xGex Alloys

1990 ◽  
Vol 201 ◽  
Author(s):  
D. J. Howard ◽  
D. C. Paine ◽  
N. G. Stoffel
Keyword(s):  
Ion Implantation ◽  
Peak Concentration ◽  
Strain Energy ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Stacking Faults ◽  
High Density ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Theoretical Predictions

AbstractHigh dose ion implantation followed by solid phase epitaxy has been investigated for use in the synthesis of defect-free graded alloys of Si1−xGex. Two implanted alloy systems were studied: (i) 200 keV 74Ge into <001> Si to form Si-rich alloys and (ii) 150 keV 29Si into <001> Ge to form Ge-rich alloys. After regrowth by solid phase epitaxy the Ge-rich alloys are strained in tension while the Si-rich alloys are in compression and, as a result, strain relaxation is anticipated above a critical dose. We report that solid phase epitaxy at 550°C following implantation of Si into <001> Ge at an energy of 150 keV allowed the defect-free regrowth of alloys with peak concentrations of 11 ± 2 at. % Si (fluence of 7.7 × l016/cm2). Ge was implanted at 200 keV into <001> Si to a peak concentration of 7 at. % (fluence of 3.6 × l016/cm2) and was regrown without the introduction of defects whereas samples implanted to a peak concentration of 13 at. % (fluence of 5.3 × l016/cm2) contained a high density of stacking faults. These experimental observations are compared to theoretical predictions that are based on the strain energy approach.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Solid Phase Epitaxy of Implanted Si-Ge-C Alloys

1995 ◽  
Vol 388 ◽  
Author(s):  
Xiang Lu ◽  
Nathan W. Cheung
Keyword(s):  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
High Dose Rate ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Rutherford Back Scattering

AbstractSi1-x-yGexCy/Si heterostuctures were formed on Si (100) surface by Ge and C implantation with a high dose rate MEtal - Vapor Vacuum arc (MEVVA) ion source and subsequent Solid Phase Epitaxy (SPE). after thermal annealing in the temperature range from 600 °C to 1200 °C, the implanted layer was studied using Rutherford Back-scattering Spectrometry (RBS), cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) and fourbounce X-ray Diffraction (XRD) measurement. Due to the small lattice constant and wide bandgap of SiC, the incorporation of C into Si-Ge can provide a complementary material to Si-Ge for bandgap engineering of Si-based heterojunction structure. Polycrystals are formed at temperature at and below 1000 °C thermal growth, while single crystal epitaxial layer is formed at 1100 °C and beyond. XRD measurements near Si (004) peak confirm the compensation of the Si1-x Gex lattice mismatch strain by substitutional C. C implantation is also found to suppress the End of Range (EOR) defect growth.

Solid Phase Epitaxial Regrowth of Implantation Amorphized Si0.7Ge0.3 Grown on (100) Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
C. Lee ◽  
K. S. Jones
Keyword(s):  
Defect Density ◽  
Solid Phase ◽  
Three Dimensional ◽  
Stacking Faults ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Strained Layers ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Interfacial Strain

ABSTRACTThe solid phase epitaxial regrowth (SPER) process of implantation amorphized Si0.7Ge0.3 layers (850± Å thick) grown on (100) Si has been studied by cross-sectional transmission electron microscopy. For amorphous layers produced by 40 Ar+ implantation highly defective three dimensional regrowth was observed in both Si0.7Ge0.3 and Si. Stacking faults were the principle defect formed of both materials during regrowth. SPER after amorphization via 73 Ge+ implantation was also investigated. It was found that the SPER velocity of the 73 Ge+ implanted Si0.7 Ge0.7 Ge0.3 was about twice the velocity of the 40 Ar+ implanted samples; for 73 Ge+ implanted Si it was about three times that of the 40Ar+ implanted samples. The activation energy for SPER in 40Ar+ and in 73 Ge+ implanted Si0.7 Geo0.3 was about 1.6 and 2.6 eV, respectively. The defect density was significantly reduced in 73 Ge+ amorphized Si but not in the 73 Ge+ amorphized Si0.7 Ge0.3. It is proposed that limited Ar solubility inhibits high quality regrowth in both SiGe and Si. Upon 73 Ge+ amorphization and solid phase epitaxy the interfacial strain between the SiGe and Si cannot be accommodated. Thus the epitaxial process is poor in these SiGe strained layers regardless of the amorphizing species.

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Iridium Silicides Formation on High Doses Ge+ Implanted Si Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Curello ◽  
R. Gwilliam ◽  
M. Harry ◽  
R. J. Wilson ◽  
B. J. Sealy ◽  
...  
Keyword(s):  
Low Dose ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Sige Layer ◽  
Thermal Reaction ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range

AbstractIn this work iridium silicidation of high dose Ge+ implanted Si layers has been studied. Compositional graded SiGe layers with a Ge peak concentration between 6 at.% and 12 at.% have been fabricated using 200 keV Ge+ ion implantation into (100) Si. A 20 nm thick Ir film was then deposited by e-beam evaporation with thermal reaction being performed to both regrow the implantation damage and form the silicide. The crystal quality of the SiGe layer and its interaction with the Ir film have been studied by cross-sectional Transmission Electron Microscopy (XTEM) and Rutherford Backscattering Spectrometry (RBS).Solid Phase Epitaxial Growth (SPEG) in the low dose case has produced a defect free SiGe layer with the formation of the IrSi phase. The annealing ambient was found to be critical for the silicidation. For the high dose case, as expected, strain relaxation related defects were observed to nucleate at a depth close to the projected range of the Ge+ implant and to extend up to the surface. A second rapid thermal annealing at higher temperatures, performed in forming gas, consumed most of the defective layer moving the silicide interface closer to the peak of the Ge distribution. A second low dose Ge+ implant following the metal deposition has been found to have a beneficial effect on the quality of the final interface. An amorphizing 500 keV Si+ implant followed by SPEG has finally been used to move the end of range defects far from the interface.

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 851-854 ◽  
Author(s):  
Thomas Kups ◽  
Petia Weih ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Jörg Pezoldt
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Lattice Site ◽  
Lattice Distortion ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Location Analysis ◽  
High Dose ◽  
Site Location ◽  
Different Types

A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4234-4237
Author(s):  
XUEQIN LIU ◽  
CONGMIAN ZHEN ◽  
YINYUE WANG ◽  
JING ZHANG ◽  
YUEJIAO PU ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Transport Properties ◽  
Hall Mobility ◽  
Carrier Transport ◽  
Lattice Strain ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Strained Si ◽  
Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

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