Solid Phase Epitaxial Regrowth of Implantation Amorphized Si0.7Ge0.3 Grown on (100) Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
C. Lee ◽  
K. S. Jones
Keyword(s):  
Defect Density ◽  
Solid Phase ◽  
Three Dimensional ◽  
Stacking Faults ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Strained Layers ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Interfacial Strain

ABSTRACTThe solid phase epitaxial regrowth (SPER) process of implantation amorphized Si0.7Ge0.3 layers (850± Å thick) grown on (100) Si has been studied by cross-sectional transmission electron microscopy. For amorphous layers produced by 40 Ar+ implantation highly defective three dimensional regrowth was observed in both Si0.7Ge0.3 and Si. Stacking faults were the principle defect formed of both materials during regrowth. SPER after amorphization via 73 Ge+ implantation was also investigated. It was found that the SPER velocity of the 73 Ge+ implanted Si0.7 Ge0.7 Ge0.3 was about twice the velocity of the 40 Ar+ implanted samples; for 73 Ge+ implanted Si it was about three times that of the 40Ar+ implanted samples. The activation energy for SPER in 40Ar+ and in 73 Ge+ implanted Si0.7 Geo0.3 was about 1.6 and 2.6 eV, respectively. The defect density was significantly reduced in 73 Ge+ amorphized Si but not in the 73 Ge+ amorphized Si0.7 Ge0.3. It is proposed that limited Ar solubility inhibits high quality regrowth in both SiGe and Si. Upon 73 Ge+ amorphization and solid phase epitaxy the interfacial strain between the SiGe and Si cannot be accommodated. Thus the epitaxial process is poor in these SiGe strained layers regardless of the amorphizing species.

Initial Stage of Solid Phase Epitaxial Growth of GaAs Films on Vicinal Si (001) Substrate

1992 ◽  
Vol 263 ◽  
Author(s):  
W.K. Choo ◽  
I. Kim ◽  
J.Y. Lee ◽  
K.I. Cho ◽  
J.-L. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Critical Thickness ◽  
Solid Phase ◽  
Three Dimensional ◽  
Stacking Faults ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Initial Stage ◽  
Gaas Films ◽  
Phase Proceeds

ABSTRACTThe initial stage of solid phase epitaxial (SPE) growth of GaAs films on the vicinal Si (001) substrate was investigated by high resolution transmission electron microscopy (H-RTEM). Cross-sectional [110] and [110] HRTEM images show that the SPE growth of crystalline GaAs islands from the amorphous phase proceeds via the formation of three-dimensional islands at the initial stage and islands' size and spacing are not critically dependent on the substrate tilt direction. The average vertical and lateral dimensions of islands were found to be 9 nm and 14 nm respectively, and the average island spacing was 10 nm. Moreover, many internal stacking faults (and/or microtwins) and a few dislocations have been already formed at this initial stage of growth. In addition, the critical thickness for misfit dislocation formation is found to depend upon the islands' lateral dimensions as well as the heights.

An Influence of the Si(111)3-4o Vicinal Surface on the Solid Phase Epitaxy of α-FeSi2 Nanorods and their Crystal Parameters

2019 ◽  
Vol 806 ◽  
pp. 30-35
Author(s):  
Nikolay Gennadievich Galkin ◽  
Konstantin N. Galkin ◽  
Sergei Andreevich Dotsenko ◽  
Dmitrii L'vovich Goroshko ◽  
Evgeniy Anatolievich Chusovitin ◽  
...  
Keyword(s):  
Direct Evidence ◽  
Solid Phase ◽  
Iron Silicide ◽  
Solid Phase Epitaxy ◽  
Vicinal Surface ◽  
Si Substrate ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Spe Method ◽  
First Time

The morphology and structure of iron silicide nanorods formed on Si (111) vicinal surface by the SPE method at T = 630 °C were studied. Optimal Fe coverage and Fe deposition rate for the formation of a dense array of the nanorods (54-65% of the substrate area) on Si (111) surface with 3-4o miscut angles were established. The aspect ratio of the nanorods is 1.9 – 3.3. Cross-sectional images of a high-resolution transmission electron microscopy (HRTEM) have shown that the nanorods have α-FeSi2 crystal structure. They are strained along the “a” axis and stretched along the “c” axis, which increased the unit cell volume by 10.3%. According to HRTEM image analysis, the nanorods have the following epitaxial relationships: α-FeSi2[01]//Si [10] and α-FeSi2(112)//Si (111). All the data obtained have provided, for the first time, a direct evidence of α-FeSi2 nanorods formation on Si (111) vicinal surface without noticeable penetration of Fe atoms into the Si substrate.

Solid Phase Epitaxy of Strained Si1−xGex Alloys Formed by Highdose Ion Implantation into Silicon

1990 ◽  
Vol 187 ◽  
Author(s):  
D. J. Howard ◽  
D. C. Paine ◽  
N. G. Stoffel
Keyword(s):  
Ion Implantation ◽  
Strain Energy ◽  
Critical Strain ◽  
Solid Phase ◽  
Stacking Faults ◽  
New Method ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Si Wafer

AbstractIn this paper we propose a new method for the synthesis of Si1−xGex strained-layer alloys using high-dose ion implantation of 74Ge at 200 keV into a preamorphized <001> Si wafer followed by solid phase epitaxy (SPE). Cross-sectional TEM was performed on samples at various stages of regrowth which revealed the evolution of the amorphous/crystalline interface and the development of strain relieving defects during SPE. We report that stacking faults are kinetically favored during SPE of Si1−xGex but are energetically feasible only above a critical strain energy. We propose a model that is based on the well known Matthews and Blakeslee approach which predicts the onset of stacking faults during SPE of high-dose ion implant-synthesized Si1−xGex/Si.

Solid Phase Epitaxy of Si1-xGex on Si Strained Layers

1989 ◽  
Vol 160 ◽  
Author(s):  
B.J. Robinson ◽  
B.T. Chilton ◽  
P. Ferret ◽  
D.A. Thompson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Crystal Quality ◽  
Solid Phase Epitaxy ◽  
Strained Layers ◽  
Transmission Electron ◽  
Layer Structures

AbstractSingle strained layer structures of up to 30 nm of Si1-xGex. on (100) Si and capped with 30-36 nm of Si have been amorphized by implantation with 120 keV As . The amorphized region, extending to a depth of 130 nm, has been regrown by solid phase epitaxy (SPE) at 600°C. Characterization of the regrown structure by Rutherford backscattering/channeling techniques and transmission electron microscopy indicates that for x < 0.18 the SPE process results in the recovery of strain, while for x > 0.18 there is increasing strain relaxation and a deterioration of crystal quality.

Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Chen ◽  
H. A. Lu ◽  
F. DiMeo ◽  
B. W. Wessels ◽  
D. L. Schulz ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACT-Heteroepitaxial superconducting Bi,Sr2CaCu2Ox (BSCCO 2212) thin films have been formed by solid phase epitaxy from amorphous films deposited on (100) LaA1O3 single crystal substrates by organometallic chemical vapor deposition. The epitaxial structure of the film is confirmed by x-ray diffraction including θ/2θ and Φ (in plane rotation) scans. Cross-sectional high resolution transmission electron microscopy indicates that the film-substrate interface is nearly atomically abrupt. Improvements in superconducting properties of the epitaxial thin films are noted in comparison to highly textured films deposited on MgO.

Growth of Epitaxial CoSi2/Si Multilayers

1986 ◽  
Vol 77 ◽  
Author(s):  
B. D. Runt ◽  
N. Lewis ◽  
L. J. Schotalter ◽  
E. L. Hall ◽  
L. G. Turner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Solid Phase ◽  
Multilayer Structures ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Transmission Electron

ABSTRACTEpitaxial CoSi2/Si multilayers have been grown on Si(111) substrates with up to four bilayers of suicide and Si. To our knowledge, these are the first reported epitaxial metal-semiconductor multilayer structures. The growth of these heterostructures is complicated by pinhole formation in the suicide layers and by nonuniform growth of Si over the suicide films, but these problems can be controlled through nse of proper growth techniques. CoSi2 pinhole formation has been significantly reduced by utilizing a novel solid phase epitaxy technique in which room-temperature-deposited Co/Si bilayers are annealed to 600–650δC to form the suicide layers. Islanding in the Si layers is minimized by depositing a thin (<100Å) Si layer at room temperature with subsequent high temperature growth of the remainder of the Si. Cross-sectional transmission electron microscopy studies demonstrate that these growth procedures dramatically improve the continuity and quality of the CoSi. and Si multilayers.

Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
T. Sawada ◽  
W. X. Chen ◽  
E. D. Marshall ◽  
K. L. Kavanagh ◽  
T. F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Shallow Junctions

ABSTRACTAlloyed ohmic contacts (i.e. Au-Ge-Ni) to n-GaAs lead to non-planar interfaces which are unsuitable for devices with shallow junctions and small dimensions. In this study, the fabrication of non-alloyed ohmic contacts (via solid state reactions) is investigated. A layered structure involving the solid phase epitaxy of Ge using a transport medium (PdGe) is shown to produce low (1 — 5 × 10∼6Ω cm2) and reproducible values of contact resistivity. The resultant interface is shown to be abrupt by cross-sectional transmission electron microscopy.

Solid-Phase Epitaxial Regrowth of Ion-Implanted Silicon on Sapphire Using Rapid Thermal Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
A M Hodge ◽  
A G Cullis ◽  
N G Chew
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Full Potential ◽  
Cross Sectional ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Device Processing

ABSTRACTSolid phase epitaxial regrowth of silicon on sapphire is used to improve the quality of as-received silicon films prior to conventional device processing. It has been shown that this is necessary, especially for layers of 0.3μm and thinner, if the full potential of this particular silicon on insulator technology is to be realised. Si+ ions are implanted at an energy and dose such that all but the surface of the silicon film is rendered amorphous. In this study, the layer is regrown using a rapid thermal annealer operated in the multi-second regime. A second shallower implant followed by rapid thermal annealing produces a further improvement. Characterisation of the material has been principally by cross-sectional transmission electron microscopy. The structures observed after different implant and regrowth treatments are discussed.

Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

2001 ◽  
Vol 16 (11) ◽  
pp. 3229-3237 ◽  
Author(s):  
A. C. Y. Liu ◽  
J. C. McCallum ◽  
J. Wong-Leung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Elevated Temperatures ◽  
Defect Formation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Plan View ◽  
Atomic Force ◽  
Transmission Electron

Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.

Defect Reduction and Defect Engineering in Silicon-on-Sapphire Material Using Ge Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
N. M. Kalkhoran ◽  
J. M. Manke ◽  
B. L. Buchanan
Keyword(s):  
Leakage Current ◽  
Defect Density ◽  
Solid Phase ◽  
Substantial Reduction ◽  
Interface Region ◽  
Radiation Environment ◽  
Solid Phase Epitaxy ◽  
Defect Reduction ◽  
Radiation Induced

AbstractSubstantial reduction of defect density in silicon-on-sapphire (SOS) material is required to broaden its range of applications to include CMOS and bipolar devices. In recent years, solid phase epitaxy and regrowth (SPEAR) and double solid phase epitaxy (DSPE) processes were applied to SOS to reduce the density of defects in the silicon. These methods result in improved carrier mobilities, but also in increased leakage current, even before irradiation. In a radiation environment, this material has a large increase in radiation induced back channel leakage current as compared to standard wafers. In other words, the radiation hardness quality of the SOS declines when the crystalline quality of the Si near the sapphire interface is improved.In this paper, we will demonstrate that Ge implantation, rather than Si implantation normally employed in DSPE and SPEAR processes, is an efficient and more effective way to reduce the density of defects near the surface silicon region without improving the Si/sapphire interface region. Ge implantation may be used to engineer defects in the Si/sapphire interface region to eliminate back channel leakage problems.

Sign in / Sign up

Export Citation Format

Share Document