InAsSb Photodiodes Grown on InAs, GaAs and Si Substrates by Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
W. Dobbelaere ◽  
J. De Boeck ◽  
W. De Raedt ◽  
J. Vanhellemont ◽  
G. Zou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Spectral Response ◽  
Structural Quality ◽  
Rutherford Back Scattering ◽  
Si Substrates ◽  
Transmission Electron ◽  
Current Voltage ◽  
K Current

ABSTRACTInAs and InAs0.85Sb0.15p-“i”-n structures were grown on InAs, GaAs and Si substrates by Molecular Beam Epitaxy. The structural quality of the layers is discussed using Transmission Electron Microscopy and Rutherford Back Scattering. The influence of the material quality on the 77 K current-voltage measurements is explained. The spectral response of the devices was measured demonstrating peak responsivities of 2.1 A/W at 3.5μm wavelength for InAs0.85Sb0.15 detectors with a 4.3 μm cut-off wavelength.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

scholarly journals Morphology and surface reconstructions of m-plane GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
J. E. Northrup ◽  
L. Lymperakis ◽  
J. Neugebauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Structural Quality ◽  
Surface Reconstructions ◽  
Gan Buffer Layer

ABSTRACTM-plane GaN(1100) is grown by plasma assisted molecular beam epitaxy on ZnO(1100) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1100) GaN films are obtained, with a slate like surface morphology. On the GaN(1100) surfaces, reconstructions with symmetry of c(2×2) and approximate “4×5” are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the “4×5” structure consisting of ≥ 2 monolayers of Ga terminating the GaN surface.

Tem Study of the Structure of Mbe GaAs Layers Grown at Low Temperature

1990 ◽  
Vol 198 ◽  
Author(s):  
Zuzanna Liliental-Weber
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Stacking Faults ◽  
Structural Quality ◽  
Crystalline Perfection ◽  
Transmission Electron ◽  
Low Temperature Gaas

ABSTRACTThe structural quality of GaAs layers grown at 200°C by molecular beam epitaxy (MBE) was investigated by transmission electron microscopy (TEM). We found that a high crystalline perfection can be achieved in the layers grown at this low temperature for thickness up to 3 μm. In some samples we observed pyramid-shaped defects with polycrystalline cores surrounded by microtwins, stacking faults and dislocations. The size of these cores increased as the growth temperature was decreased and as the layer thickness was increased. The upper surface of layers with pyramidal defects became polycrystalline at a critical thickness of the order of 3μm. We suggested that the low-temperature GaAs becomes polycrystalline at a critical thickness either because of a decrease in substrate temperature during growth or because strain induced by excess As incorporated in these layers leads to the formation of misoriented GaAs nuclei, thereby initiating polycrystalline growth. The pyramidal shape of the defects results from a growth-rate hierarchy of the low index planes in GaAs.

Improved structural quality of molecular‐beam epitaxy HgCdTe films

1989 ◽  
Vol 7 (2) ◽  
pp. 517-522 ◽  
Author(s):  
R. J. Koestner ◽  
H.‐Y. Liu ◽  
H. F. Schaake ◽  
T. R. Hanlon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Quality

scholarly journals High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)

2D Materials ◽  
2021 ◽  
Author(s):  
Frédéric Bonell ◽  
Alain Marty ◽  
Céline Vergnaud ◽  
Vincent Consonni ◽  
Hanako Okuno ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Carrier Mobility ◽  
Insulating Substrates

Abstract PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisioned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and X-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2V-1s-1 at room temperature and up to 447 cm2V-1s-1 at low temperature.

Generation and Suppression of Stacking Faults in Gap Layers Grown on Si(100) Substrates by Molecular Beam Epitaxy and Migration Enhanced Epitaxy

1996 ◽  
Vol 441 ◽  
Author(s):  
Y. Takagi ◽  
H. Yonezu ◽  
K. Samonji ◽  
T. Tsuji ◽  
N. Ohshima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Generation Process ◽  
Si Substrates ◽  
Transmission Electron ◽  
Migration Enhanced Epitaxy ◽  
Regular Network ◽  
And Migration

AbstractWe have investigated the generation process of crystalline defects in GaP layers grown on Si substrates (GaP/Si) by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). Transmission electron microscopy observations revealed that a regular network of misfit dislocations was generated in GaP/Si by MEE. On the other hand, threading dislocations as well as interfacial misfit dislocations were observed in GaP/Si by MBE. Moreover, stacking faults were generated in high density at the hetero-interface of GaP/Si by MBE. The density of stacking faults was drastically reduced by MEE.

Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
B.J. Wu ◽  
K.L. Wang ◽  
Y.J. Mii ◽  
Y.S. Yoon ◽  
A.T. Wu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates

AbstractGaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.

scholarly journals GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

2008 ◽  
Vol 1080 ◽  
Author(s):  
Kevin Goodman ◽  
Kejia Wang ◽  
Xiangning Luo ◽  
John Simon ◽  
Tom Kosel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Molecular Beam Epitaxy Growth ◽  
Growth Time ◽  
Band Edge Emission ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Transmission Electron ◽  
Microscopy Images

ABSTRACTMolecular beam epitaxy growth of GaN and InGaN nanowires is accomplished on Si (111) substrates using Ga-droplet nucleation. Typical diameters range from 25-80 nm and lengths can be varied by increasing the growth time; the growth rate is ∼0.25 microns/hour. The nanowires have been characterized structurally and optically. Photoluminescence spectra show band-edge emission of GaN nanowires centered at 362 nm at 290 K. Transmission electron microscopy images unveil that the nanowires are highly crystalline, and grow along the 0001 polar direction. Indium has also been successfully incorporated into GaN nanowires by modifying the growth conditions; the InGaN nanowires emit at ∼520 nm, which provides a possible route to solving strain related problems of high In-composition InGaN based efficient green emitters.

Growth and characterization of GaAs on Si substrates grown by molecular-beam epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 897-903
Author(s):  
P. Mandeville ◽  
A. J. SpringThorpe ◽  
C. J. Miner ◽  
R. A. Bruce ◽  
J. F. Currie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Parameters ◽  
Current Gain ◽  
Hall Resistance ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas

Single-crystal GaAs layers have been grown by molecular beam epitaxy (MBE) on (100) Si substrates. Surface morphology, defect density, and optical and electrical properties have been studied as a function of the growth parameters. The characterization techniques included photoluminescence, Hall effect, cross-sectional transmission electron microscopy, and X-ray diffraction. GaAs metal semiconductor field-effect transitors on Si exhibited transconductances of 128 mS∙mm−1 and current-gain cutoff frequencies as high as 19 GHz. Special heterostructures showed Shubnikov–de Haas oscillations at low temperature and plateaux in the Hall resistance, which confirmed the presence of two-dimensional electron gas in the heterostructure.

Study on Barium Strontium Titanate Thin Films Integrated on Si Substrates by Laser Molecular Beam Epitaxy

2009 ◽  
Vol 79-82 ◽  
pp. 823-826
Author(s):  
X.Y. Zhou ◽  
Yun Zhou ◽  
G.Y. Wang ◽  
Y. Wang ◽  
Helen Lai Wah Chan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Structure ◽  
Bias Field ◽  
Sio2 Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Laser Molecular Beam Epitaxy ◽  
Si Substrates ◽  
Transmission Electron

(Ba,Sr)TiO3 thin film has been deposited on Si (001) wafer with the SiO2 layer as the block layer through laser molecular-beam epitaxy using an ultra thin Sr layer as template. X-ray diffraction measurements and the cross-sectional observations under transmission electron microscope indicated that BST was well crystallized. This deposition of Sr layer is considered to remove the thin SiO2 layer to produce a layer, which is crystallized and has a lattice structure matching with that of perovskite BST. The maximum in-plane dielectric tunability is calculated to be 50% at 1 GHz under a moderate DC bias field of 13.3 V/µm. This BST/Si structure is believed to be a promising candidate in the development of ferroelectric BST-based microwave devices.

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