Heteroepitaxy of Si/Si1−xGex Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
T. Hsu ◽  
R. Qian ◽  
D. Kinosky ◽  
J. Irby ◽  
B. Anthony ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Defect Density ◽  
Chemical Vapor ◽  
High Energy ◽  
Resolution Limit ◽  
Remote Plasma ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Sims Analysis

ABSTRACTLow temperature heteroepitaxial growth of Si1−xGex films with mole fractions “x” ranging from 0.07 to 0.72 on Si(100) has been achieved by Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) at substrate temperatures of 305°C and 450°C. Reflection High Energy Electron Diffraction (RHEED), Transmission Electron Microscopy (TEM), and Secondary Ion Mass Spectroscopy (SIMS) were employed to characterize the crystallinity, composition and interfacial sharpness. The Si1−xGex films with thickness below the critical layer thickness were confirmed to have excellent crystallinity with defect density below the sensitivity of TEM analysis (105 cm−2). The Ge profile, from SIMS analysis, in a Si/Si0.8Ge0.2/Si/Si0.82Ge0.18 multilayer structure was found to have a transition width of 30Å/decade, which is the resolution limit of SIMS analysis. There is no Ge segregation observed at the Si/Si1−xGex interface. A superlattice structure with 24 pairs of Si(60Å)/Si0.8Ge0.2 (60Å) layers has been successfully grown by RPCVD at 450°C. From cross-sectional TEM analysis, very low defect densities and abrupt Ge transitions were confirmed.

Growth of Ge-on-Si Structures using Remote Plasma-Enhanced Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Rong Z. Qian ◽  
D. Kinosky ◽  
A. Mahajan ◽  
S. Thomas ◽  
J. Fretwell ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Remote Plasma ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Si Substrates ◽  
Wide Range

ABSTRACTRemote Plasma-enhanced Chemical Vapor Deposition (RPCVD) has been successfully used to grow GexSi1−x/Si (x = 0.1 – 1.0) heteroepitaxial structures at low temperatures (∼450°C). This technique utilizes a noble gas (Ar or He) r-f plasma to decompose reactant gases (SiH4 and GeH4) and drive the chemical deposition reactions in the gas phase as well as on the substrate surface. Growth of pure Ge on Si is of great interest because it provides a promising technique for making suitable low-cost substrates for thin-film Ge photodetectors as well as GaAs devices on Si substrates. The realization of these applications depends on the ability to grow high-quality epitaxial Ge layers on Si substrates. Since GaAs is lattice matched to Ge, growth of Ge layers on Si substrates with good crystalline perfection would permit the integration of GaAs and Si devices. Islanding was observed after the growth of pure Ge films directly on Si(100) for a wide range of plasma powers (7W ∼ 16W) in RPCVD. Cross-sectional TEM analysis showed that the islands have complicated facet structures, including {311} planes. Graded Gex Si1−x buffer layers with different Ge profiles have been used prior to the growth of Ge. It was found that uniform Ge films can be obtained using a buffer with an abrupt Ge profile, and the dislocation density in the Ge film decreases with increasing distance from the substrate.

Growth And High Resolution Tem Characterization of GexSi1−x/Si Hetero-Structures by Remote Plasma-Enhanced Chemical Vapor Deposition

1991 ◽  
Vol 235 ◽  
Author(s):  
R. Qian ◽  
I. Chung ◽  
D. Kinosky ◽  
T. Hsu ◽  
J. Irby ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Resolution ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Misfit Dislocations ◽  
Remote Plasma ◽  
Tem Analysis ◽  
Plan View ◽  
Lattice Constants ◽  
High Resolution Tem

ABSTRACTRemote Plasma-enhanced Chemical Vapor Deposition (RPCVD) has been used to grow GexSi1−x/Si heteroepitaxial thin films at low temperatures (∼450°C). In situ RHEED has been used to confirm that smooth, single crystal heteroepitaxial films can be grown by RPCVD. Plan-view and cross-sectional TEM have been employed to study the microstructure of the heteroepitaxial films. Lattice imaging high resolution TEM (HRTEM) has shown perfect epitaxial lattice alignment at the heterojunction interfaces. GexSi1−x/Si films which exceed their CLT's appreciably show dense Moiré fringes under plan-view TEM. The spacings between the fringes have been used to estimate the relaxed lattice constants. In addition to the inhomogeneous strain observed in-XTEM, Selected Area electron Diffraction (SAD) analysis of the interfaces displays two split patterns. The spacings between the diffraction spots have been used to calculate the lattice constants in the epitaxial films in different crystal directions, which agree very well with the prediction by Vegard's law as well as the estimate from plan-view TEM analysis. HRTEM analysis also reveals the crystallographic nature of the interfacial misfit dislocations in the relaxed films.

The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd).

1987 ◽  
Vol 105 ◽  
Author(s):  
Sang S. Kim ◽  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Energy ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Semiconductor Surface ◽  
Remote Plasma

AbstractWe have constructed an Ultra High Vacuum (UHV) multichamber system and have deposited ‘gate quality’ silicon dioxide by the remote plasma enhanced chemical vapor deposition (Remote PECVD) process at low substrate temperatures (Ts ≤400 °C). Native oxides and other surface contaminants are removed under ultra high vacuum (UHV) conditions and the character of the semiconductor surface is determined prior to film deposition using in-situ Reflection High Energy Electron Defraction (RHEED). Measurents made on MOS structures of capacitance-voltage, current-voltage, field break-down, hysteresis, and mobile ion drift indicate that these films are ‘comparable’ to thermally (Ts >1100 °C) grown oxides. The structural properties of the films arg studied by ir spectroscopy and ellipsometry.

Growth and High Resolution Tem Characterization of GexSi1−x/Si Hetero-Structures by Remote Plasma-Enhanced Chemical Vapor Deposition

1991 ◽  
Vol 236 ◽  
Author(s):  
R. Qian ◽  
I. Chung ◽  
D. Kinosky ◽  
T. Hsu ◽  
J. Irby ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Resolution ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Misfit Dislocations ◽  
Remote Plasma ◽  
Tem Analysis ◽  
Plan View ◽  
Lattice Constants ◽  
High Resolution Tem

AbstractRemote Plasma-enhanced Chemical Vapor Deposition (RPCVD) has been used to grow GexSi1−x/Si heteroepitaxial thin films at low temperatures (∼450°C). In situ RHEED has been used to confirm that smooth, single crystal heteroepitaxial films can be grown by RPCVD. Plan-view and cross-sectional TEM have been employed to study the microstructure of the heteroepitaxial films. Lattice imaging high resolution TEM (HRTEM) has shown perfect epitaxial lattice alignment at the heterojunction interfaces. GexSi1−x/Si films which exceed their CLT's appreciably show dense Moiré fringes under plan-view TEM. The spacings between the fringes have been used to estimate the relaxed lattice constants. In addition to the inhomogeneous strain observed in XTEM, Selected Area electron Diffraction (SAD) analysis of the interfaces displays two split patterns. The spacings between the diffraction spots have been used to calculate the lattice constants in the epitaxial films in different crystal directions, which agree very well with the prediction by Vegard's law as well as the estimate from planview TEM analysis. HRTEM analysis also reveals the crystallographic nature of the interfacial misfit dislocations in the relaxed films.

The Dependence of Defect Density in GexSi1−x/Si Heterostructures Grown by Remote Plasma-Enhanced Chemical Vapor Deposition on Deposition Parameters

1992 ◽  
Vol 263 ◽  
Author(s):  
D. Kinosky ◽  
R. Qian ◽  
T. Hsu ◽  
J. Irby ◽  
A. Mahajan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Dislocation Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Defect Density ◽  
Chemical Vapor ◽  
Misfit Dislocations ◽  
Plasma Power ◽  
Remote Plasma ◽  
Density Peaks

ABSTRACTThe density of misfit dislocations in GexSi1−x films has been measured as a function of deposition temperature and r-f plasma power in Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD). The misfit dislocation density decreases as the deposition temperature is lowered from 450°C to 410°C. As the plasma power is increased from 6.6 to 16W, the dislocation density peaks at lOW and then decreases with increasing power.

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

Overgrowth of Single Crystal Diamond Using Defect-Selective Etching and Epitaxy Technique in Chemical Vapor Deposition

2021 ◽  
Vol 21 (8) ◽  
pp. 4412-4417
Author(s):  
Jonggeon Lee ◽  
Taemyung Kwak ◽  
Geunho Yoo ◽  
Seongwoo Kim ◽  
Okhyun Nam
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Defect Density ◽  
Chemical Vapor ◽  
Atomic Force Microscope Image ◽  
Selective Etching ◽  
Diamond Surface ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

In this study, we demonstrated the defect-selective etching and epitaxy technique for defect reduction of a heteroepitaxial chemical vapor deposition (CVD) diamond substrate. First, an 8 nm layer of nickel was deposited on the diamond surface using an e-beam evaporator. Then, defect-selective etching was conducted through an in situ single process using microwave plasma chemical vapor deposition (MPCVD). After defect-selective etching, the diamond layer was overgrown by MPCVD. The defect density measured from the atomic force microscope image decreased from 3.27×108 to 2.02×108 cm−2. The first-order Raman peak of diamond shifted from 1340 to 1336 cm−1, and the full width at half maximum (FWHM) decreased from 9.66 to 7.66 cm−1. Through the defect-selective etching and epitaxy technique, it was confirmed that the compressive stress was reduced and the crystal quality improved.

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