Properties of Al2O3 films prepared by argon ion assisted deposition

1994 ◽  
Vol 9 (10) ◽  
pp. 2688-2694 ◽  
Author(s):  
Mansour S. Al-Robaee ◽  
Ghanashyam M. Krishna ◽  
G.N. Subanna ◽  
Narasimha K. Rao ◽  
S. Mohan
Keyword(s):  
Refractive Index ◽  
Current Density ◽  
Ion Beam ◽  
Ion Energy ◽  
Argon Ions ◽  
Beam Parameters ◽  
Substrate Temperatures ◽  
Argon Ion ◽  
Al2o3 Films ◽  
Deposited Films

Aluminum oxide films have been prepared by ion assisted deposition using argon ions with energy in the range 300 to 1000 eV and current density in the range 50 to 220 μA/cm2. The influence of ion energy and current density on the optical and structural properties has been investigated. The refractive index, packing density, and extinction coefficient are found to be very sensitive to the ion beam parameters and substrate temperatures. The as-deposited films were found to be amorphous and could be transformed into crystalline phase on annealing. However, the crystalline phases were different in films prepared at ambient and elevated substrate temperatures.

Modification Of Properties Of Ion-Beam-Sputtered Yttrium-Oxide Thin Films By Low-Energy Ion Bombardment

1991 ◽  
Vol 223 ◽  
Author(s):  
K. A. Klemm ◽  
L. F. Johnson ◽  
M. B. Moran
Keyword(s):  
Yttrium Oxide ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Ion Energy ◽  
Deposited Energy ◽  
Current Densities ◽  
Argon Ions ◽  
Substrate Temperatures ◽  
Argon Content

ABSTRACTThe effect of low-energy ion bombardment on ion-beam-sputtered yttrium-oxide films was studied. Yttria films were subjected to argon ions accelerated by a potential of up to 500 V with current densities of up to 8 μA/cm2 and were deposited at differing substrate temperatures. Yttria films bombarded during deposition were found to be amorphous, and trends observed with increased ion energy include reduced amount of residual compressive stress, increased argon content, and decreased refractive index, depending on deposited energy and substrate temperature.

Dry Etching of Indium Phosphide

1992 ◽  
Vol 262 ◽  
Author(s):  
P. Bond ◽  
P. Sengupta ◽  
Kevin G. Orrman-Rossiter ◽  
G. K. Reeves ◽  
P. J. K. Paterson
Keyword(s):  
Indium Phosphide ◽  
Etch Rate ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Building Blocks ◽  
Photonic Devices ◽  
Ion Energy ◽  
Growth Area ◽  
Argon Ion ◽  
Main Growth

ABSTRACTIndium Phosphide (InP) based multilayer structures are becoming increasingly important in the semiconductor industry with optoelectronic applications being the main growth area. Mesa type structures with finely controlled width and etch angle, often form the building blocks for many of these photonic devices. Traditional wet etching techniques have often proved to be inadequate for the required anisotropie removal of material. This paper presents the results of etching semi-insulating InP (100) using a combination of an Argon ion beam and a reactive gas, CCl2F2 (Freon 12). It was found that the etch rate was enhanced by increasing the ion energy and by the addition of CCl2F2. Auger electron spectroscopy revealed that the increased etch rate was accompanied by an increase in the surface indium concentration and at low ion beam energies carbon build-up retarded the etch rate. The optimum etch angle to fabricate 3μm waveguides was found to be 22° to the surface normal, however Schottky contacts to these structures were unsuccessful.

Irradiation Effects on the Interfacial Adhesion Between Ti Films and SiO2 Substrate

1988 ◽  
Vol 119 ◽  
Author(s):  
Guoan Cheng ◽  
Baixin Liu ◽  
Hengde Li
Keyword(s):  
Adhesive Strength ◽  
Interfacial Adhesion ◽  
Ion Irradiation ◽  
Threshold Dose ◽  
Ion Energy ◽  
Sio2 Substrate ◽  
Argon Ions ◽  
Argon Ion ◽  
Thermodynamics Of Solids ◽  
Ti Films

AbstractThe interfacial adhesion of Ti films on SiO2 substrate was studied by room temperature argon ion irradiation. Range of ion energy was chosen from 100 to 300 keV. Adhesive strength was measured by scratching test. For Ti/SiO2 pair irradiated by 100 keV argon ions, the adhesion was easier to enhance and much greater strength was obtained than that irradiated by 300 keV argon ions. The threshold dose also increased with the increasing of ion energy. The adhesive strength and the threshold dose increased when the metallizing temperatures were higher. Rutherford backscattering spectra(RBS) showed that a transition layer of about 10 nm thick was formed in Ti/SiO2 interface region after irradiation to a dose of 5X1016 Ar/cm2, indicating some chemical reaction has probably taken place. The experimental results are discussed in terms of thermodynamics of solids.

Ion Beam Assisted Deposition of Cubic Boron Nitride Thin Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Secondary Phase ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Argon Ions

ABSTRACTBoron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.

1X Thin Films Prepared By Mass Separated Ion Beam Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
H. C. Hofsäss ◽  
C. Ronntng ◽  
U. Griesmeier ◽  
M. Gross
Keyword(s):  
Thermal Activation ◽  
Room Temperature ◽  
Ion Beam ◽  
Ir Absorption ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Ion Energies ◽  
Substrate Temperatures ◽  
Absorption Measurements ◽  
Beam Deposition

AbstractWe have studied the growth and the properties of CN films prepared by deposition of mass separated 12C+ and 14N+ ions. The film thickness and density were determined as a function of ion energy between 20 eV and 500 eV and for substrate temperatures of 20 °C and 350 °C. Sputtering effects limit the maximum N concentration to about 30 - 40 at.% even for ion energies as low as 20 eV. IR absorption measurements indicate predominantly C-N and C=N bonding and an amorphous or strongly disordered CN-network. For room temperature deposited CN films with N concentrations up to 25 at.% I-V curves of metal-CN-metal devices show Frenkel-Poole behavior due to field-enhanced thermal activation of localized electrons. Films deposited at 350 °C have N concentrations below 15 at.% and graphitic properties like low resistivity and a density close to graphite.

Nanomorphology of Aluminum Oxide Layer after Argon Ion Bombardment

2015 ◽  
Vol 32 ◽  
pp. 60-65
Author(s):  
Oleg Ashkhotov ◽  
Irina Ashkhotova
Keyword(s):  
Oxide Layer ◽  
Ion Beam ◽  
Polycrystalline Aluminum ◽  
Natural Oxide ◽  
Argon Ion Bombardment ◽  
Argon Ions ◽  
Nitrogen Ion ◽  
Aluminum Oxide Layer ◽  
Electron Energy Loss ◽  
Argon Ion

Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) studied the interaction of argon ions with a natural oxide layer of polycrystalline aluminum. It was found that the bombardment of argon ions with an energy lower sputtering threshold Al2O3leads to accumulation of ions bombarding the interstitial voids in the surface, thereby forming a solid solution of atoms of the target, the argon ions and nitrogen ion beam, the captured residual gas from the chamber of the spectrometer.

The effect of main-ion-beam parameters on some properties of a-Si:H prepared by ion-beam-assisted reactive evaporation

1991 ◽  
Vol 69 (3-4) ◽  
pp. 265-269 ◽  
Author(s):  
S. Zhang ◽  
D. E. Brodie ◽  
R. D. Audas
Keyword(s):  
Ion Beam ◽  
Source Parameters ◽  
Dark Conductivity ◽  
Ir Absorption ◽  
Ion Density ◽  
Ion Energy ◽  
Reactive Evaporation ◽  
Transmission Electron ◽  
Beam Parameters ◽  
Diffraction Patterns

This paper reports the effect of the ion-beam-source parameters on the properties of a-Si:H deposited by ion-beam-assisted reactive evaporation with silane as the feedthrough gas. It is observed that the hydrogen concentration (CH) in the resulting film is determined mainly by the ion-beam intensity at the substrate for a fixed substrate temperature (about 60 °C), a fixed silane partial pressure (2 × 10−4 Torr (1 Torr = 133.3 Pa)) and a fixed deposition rate (8 nm min−1). As CH increases from 15 to 34 at.% in films containing 3 at.% carbon, the SiH stretching mode in the IR absorption spectrum shifts from 2000 to 2055 cm−1. The ratio of the photoconductivity to dark conductivity depends not only on the incident ion density (or CH), but also on the ion-beam energy. Near an ion energy of 200 eV and a CH of 24 at.%, this ratio goes through a maximum (~1 × 105). Electron-diffraction patterns show that the films are amorphous, and microscopic observations by transmission electron microscopy illustrate that when suitable ion-beam parameters are used, the porosity of the films is reduced.

scholarly journals Automated Control of Plasma Ion-Assisted Electron Beam-Deposited TiO2 Optical Thin Films

Coatings ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 272
Author(s):  
Bing Hui ◽  
Xiuhua Fu ◽  
Des Gibson ◽  
David Child ◽  
Shigeng Song ◽  
...  
Keyword(s):  
Refractive Index ◽  
Electron Beam ◽  
Current Density ◽  
Hollow Cathode ◽  
Plasma Source ◽  
Ion Current ◽  
Independent Control ◽  
Cathode Plasma ◽  
Ion Energy ◽  
Ion Current Density

A hollow cathode plasma source has been operated automatically, demonstrating independent control of plasma ion energy and ion current density for plasma ion-assisted electron beam-deposited titania (TiO2). The lanthanum hexaboride hollow cathode design described in this work utilizes both the interior and exterior cathode surfaces, with the additional electrons generated removing the need for a separate neutralizing source. Automatic feedback control of plasma source cathode-to-anode accelerator voltage (AV—via argon gas flow to the anode and/or cathode plasma source areas) and accelerator current (AC—via an external high-current power supply) provides independent control of the ion energy distribution function and ion current density, respectively. Automated run-to-run reproducibility (over six separate deposition runs) in TiO2 refractive index (550 nm) was demonstrated as 2.416 ± 0.008 (spread quoted as one standard deviation), which is well within the required refractive index control for optical coating applications. Variation in refractive index is achievable through control of AV (ion energy) and/or AC (ion current density), directly influencing deposited TiO2 structural phase. Measured dependencies of TiO2 refractive index and extinction coefficient on AV and AC are described. Optimum plasma source parameters for assisted electron beam deposition of TiO2 optical thin-film applications are highlighted.

Room Temperature Growth of Silicon Dioxide Using a Low Energy Ion Beam

1986 ◽  
Vol 75 ◽  
Author(s):  
S. S. Todorov ◽  
E. R. Fossum
Keyword(s):  
Silicon Dioxide ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Film Growth ◽  
Ion Beam ◽  
Silicon Surfaces ◽  
Ion Energy ◽  
Thermally Driven ◽  
Thin Oxide Films ◽  
Substrate Temperatures

AbstractUltra-thin films of silicon dioxide are formed on silicon surfaces at room temperature by direct bombardment with an oxygen-containing ion beam at energies of 150 eV or less. The process of film growth is studied.through ellipsometric measurements of their properties as a function of ion energy and dose, oxygen partial pressure and substrate temperature. Typical oxide thicknesses of the order of 50 Å are obtained by three minute or longer exposures to beams of current density 135 μA/cm2. Ion-beam grown oxides are compared to conventional thin oxide films grown at elevated temperatures and show the same stoichiometry. The growth rate decreases rapidly after a continuous oxide film has been formed. Performing the ion bombardment at elevated substrate temperatures leads to only small enhancement of the oxide growth indicating non-thermally driven reaction kinetics.

Sign in / Sign up

Export Citation Format

Share Document