Nanostructure Evolution During the Transition of TiO2, PbTiO3 and PZT from GELS to Crystalline thin Films.

1991 ◽  
Vol 230 ◽  
Author(s):  
Z. C. Kang ◽  
A. Gupta ◽  
M. J Mckelvy ◽  
L. Eyring ◽  
S. K. Dey
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Film ◽  
High Resolution Electron Microscopy ◽  
Oxide Thin Film ◽  
Spectrometric Analysis ◽  
Thermal Mass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resolution Electron

AbstractThe nanostructure evolution of PZT, PT and T thin films has been studied by high-resolution electron microscopy (HREM) supported by other techniques such as thermal analysis, thermal mass spectrometric analysis and X-ray diffraction analysis. The evolution follows a common progression from amorphous film, to the development of condensed regions that develop crystalline order, to the final polycrystalline oxide thin film. If the precursor gel contains lead, the film develops fluctuating surface “blisters” that evolve to an oxide final product as well. Minor structural and compositional differences exist across the final oxide thin film.

scholarly journals Structural and tribological properties of tungsten oxide thin film on a silicon substrate

2020 ◽  
Vol 44 (11-12) ◽  
pp. 744-749
Author(s):  
Siamak Ziakhodadadian ◽  
Tianhui Ren
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Tungsten Oxide ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Tungsten Oxide Thin Films ◽  
Scanning Electron

In this work, tungsten oxide thin films are deposited on silicon substrates using the hot filament chemical vapor deposition system. The influence of substrate temperature on the structural, morphological, and elemental composition of the tungsten oxide thin films is investigated using X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy techniques. Also, the mechanical and tribological properties of these thin films are considered using nanoindentation and scratch tests. Based on X-ray diffraction results, it can be concluded that tungsten oxide thin films are synthesized with a cubic WO3 structure. From field-emission scanning electron microscopy images, it can be seen that tungsten oxide thin films are made of crystal clusters which have grown vertically on the substrate surface. In addition, the results exhibit two asymmetric W4d5/2 and W4d7/2 peaks which can be assigned to W5+ and W4+ species, respectively. The mechanical results show that the hardness and the elastic modulus increase on raising the substrate temperature up to 600 °C. From the tribological performances, the friction coefficient of the tungsten oxide thin film decreases on increasing the substrate temperature.

scholarly journals The challenge of determining the crystal structure of epitaxial 0001 oriented sp2-BN films

2018 ◽  
Author(s):  
Mikhail Chubarov ◽  
Hans Högberg ◽  
Anne Henry ◽  
Henrik Pedersen
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structural Identification ◽  
High Resolution Electron Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resolution Electron ◽  
Oriented Films ◽  
Plane Diffraction

<p>Boron nitride (BN) as a thin film is promising for many future electronic applications. On technologically important substrates, 0001 α-Al<sub>2</sub>O<sub>3</sub> and 0001 4H/6H-SiC, chemical vapor deposition yields epitaxial sp<sup>2</sup>-BN films oriented around the c-axis. Here, we seek to point out that sp<sup>2</sup>-BN can form two different polytypes; hexagonal BN (h-BN) and rhombohedral BN (r-BN), only differing in the stacking of the basal planes but with identical distance between the basal planes and in-plane lattice parameters. This makes structural identification challenging in c-axis oriented films. We suggest the use of a combination of high-resolution electron microscopy with careful sample preparation and thin film X-ray diffraction techniques like pole figure measurements and glancing incidence (in-plane) diffraction to fully distinguish h-BN from r-BN.</p>

scholarly journals The challenge of determining the crystal structure of epitaxial 0001 oriented sp2-BN films

2018 ◽  
Author(s):  
Mikhail Chubarov ◽  
Hans Högberg ◽  
Anne Henry ◽  
Henrik Pedersen
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structural Identification ◽  
High Resolution Electron Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resolution Electron ◽  
Oriented Films ◽  
Plane Diffraction

<p>Boron nitride (BN) as a thin film is promising for many future electronic applications. On technologically important substrates, 0001 α-Al<sub>2</sub>O<sub>3</sub> and 0001 4H/6H-SiC, chemical vapor deposition yields epitaxial sp<sup>2</sup>-BN films oriented around the c-axis. Here, we seek to point out that sp<sup>2</sup>-BN can form two different polytypes; hexagonal BN (h-BN) and rhombohedral BN (r-BN), only differing in the stacking of the basal planes but with identical distance between the basal planes and in-plane lattice parameters. This makes structural identification challenging in c-axis oriented films. We suggest the use of a combination of high-resolution electron microscopy with careful sample preparation and thin film X-ray diffraction techniques like pole figure measurements and glancing incidence (in-plane) diffraction to fully distinguish h-BN from r-BN.</p>

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals Optoelectronic properties of highly porous silver oxide thin film

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ahmad Al-Sarraj ◽  
Khaled M. Saoud ◽  
Abdelaziz Elmel ◽  
Said Mansour ◽  
Yousef Haik
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plasma Etching ◽  
Silver Oxide ◽  
Oxidation Time ◽  
Oxide Thin Film ◽  
X Ray ◽  
Porous Silver ◽  
Highly Porous

Abstract In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW’s morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV–Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity. Graphic abstract

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

scholarly journals Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Gyu-bong Cho ◽  
Tae-hoon Kwon ◽  
Tae-hyun Nam ◽  
Sun-chul Huh ◽  
Byeong-keun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Properties ◽  
Discharge Capacity ◽  
Oxygen Deficiency ◽  
Oxide Phase ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Nickel Oxide

LiNiO2thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2thin film. The ZrO2-coated LiNiO2thin film provided an improved discharge capacity compared to bare LiNiO2thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2coating layer.

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