A Novel Growth Method for High Quality GaAs/CaF2/Si(111) Structures by Using “Type-A” CaF2 Film

1991 ◽  
Vol 237 ◽  
Author(s):  
H. Mizukami ◽  
A. Ono ◽  
K. Tsutsui ◽  
S. Furukawa
Keyword(s):  
Surface Morphology ◽  
Crystallographic Orientation ◽  
Type A ◽  
Epitaxial Relationship ◽  
High Quality ◽  
Gaas Films ◽  
Growth Method ◽  
Step Growth ◽  
Relationship Of

ABSTRACTControl of epitaxial relationship of CaF2 films grown on Si(111) substrates was considered to be important to improve surface morphology and crystallini ty of GaAs films on CaF2/Si(111) structures. We successfully grew CaF2 films with the “type-A” epitaxial relationship on Si(111) substrates, that is, the crystallographic orientation of the CaF2 films were aligned in the same direction as that of the Si(111) substrates. These “type-A” CaF2 films were grown by a two step growth method. It was found that surface morphology of GaAs films on the CaF2/Si(111) structures was drastically improved by growth of the “type-A” CaF2 films.

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

The Role of thin Low Temperature Deposited GaAs Films on the two Step Growth of GaAs on Si By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
Hajine Inuzuka ◽  
Yasutoshi Suzuki ◽  
Naomi Awano ◽  
Kunihiko Hara
Keyword(s):  
Structural Change ◽  
Low Temperature ◽  
Three Dimensional ◽  
Gaas Layer ◽  
High Quality ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Gaas Films ◽  
Step Growth

AbstractThe structural change of the thin low temperature (~450°C) deposited GaAs films and the role for conventional temperature growth were studied by RHEED and cross-sectional TEN observation. The formation of the threedimensional high quality single crystalline islands from continuous twin GaAs layer deposited at low temperature (~450°C) was clarified. These three-dimensional islands act as the seeds for conventional temperature growth.

Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method

1991 ◽  
Vol 30 (Part 1, No. 3) ◽  
pp. 454-458 ◽  
Author(s):  
Atsuki Ono ◽  
Kazuo Tsutsui ◽  
Osamu Ishiyama ◽  
Seijiro Furukawa
Keyword(s):  
Point Defects ◽  
Gaas Films ◽  
Growth Method ◽  
Step Growth

scholarly journals Growth and Characterizations of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Dong Fong
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (52) ◽  
pp. 27399-27403 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Smooth Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Metallic Nickel ◽  
Epitaxial Relationship ◽  
High Quality ◽  
Nickel Substrates ◽  
Abrupt Interface ◽  
Relationship Of

Single-crystalline AlN films with smooth surface and abrupt interface have been grown on metallic nickel (Ni) substrates by pulsed laser deposition with an in-plane epitaxial relationship of AlN[112̄0]//Ni[11̄0].

Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications

2003 ◽  
Vol 8 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Myoung-Bok Lee ◽  
Sung-Ho Hahm ◽  
Yong-Hyun Lee ◽  
Jung-Hee Lee ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Sheet Resistance ◽  
Electromechanical Coupling ◽  
Electromechanical Coupling Coefficient ◽  
Columnar Growth ◽  
Grain Sizes ◽  
Nucleation Sites ◽  
Growth Method ◽  
Device Applications ◽  
Step Growth

Semi-insulating undoped GaN films were grown based on controlling the size of the nucleation sites through a special two-step growth method: First, 16 nm LT-GaN was annealed at 950 ° with a ramping time of 4 min, then the GaN was grown at this temperature for 1 min. Second, the growth temperature was increased to 1020° with a ramping time of 2 min and the GaN layer finally grown at 1020 ° for 40 min. The film grown by this sequence exhibited sheet resistance of up to 109 Ω/sq with mirror-like surface morphology. By slow ramping to 950° in the initial phase of growth, smaller grain sizes and higher nuclei densities were formed and the columnar growth mode along the c direction was dominant. The observation of higher resistance in two-step growth is believed due to the increased misorientation of nuclei when the growth proceeds during temperature ramping to 1020°. The fabricated saw filter on semi-insulating GaN exhibited a high velocity of 5342 m/s at center frequencies of 133.57 MHz and an electromechanical coupling coefficient(k2) of about 0.763 %, which was enhanced due to the improvement of surface morphology with high sheet resistance by the two- step ramping technique.

scholarly journals Characterizations of p-type GaAs Films

2020 ◽  
Author(s):  
Sang Zhen
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

2014 ◽  
Vol 778-780 ◽  
pp. 167-170 ◽  
Author(s):  
Yoichiro Mitani ◽  
Nobuyuki Tomita ◽  
Kenichi Hamano ◽  
Masayoshi Tarutani ◽  
Takanori Tanaka ◽  
...  
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
High Quality ◽  
Sic Particles ◽  
Before And After ◽  
Growth Method ◽  
Step Growth ◽  
Micrometer Scale

A new growth method for considerably suppressing generation of carrot and triangle defects is presented. Based on the investigation for the surfaces before and after the epitaxial growth, it becomes clear that those defects were results from micrometer-scale SiC particles. For removing the particles, pre-flow of H2 at high temperature before the growth was very effective. The density of those defects strongly depends on the condition of the pre-flow and especially decreased at Tp=1575°C and tp=180 sec.

High quality homoepitaxial diamond thin film synthesis with high growth rate by a two-step growth method

1999 ◽  
Vol 8 (6) ◽  
pp. 1046-1049 ◽  
Author(s):  
D. Takeuchi ◽  
S. Yamanaka ◽  
H. Watanabe ◽  
S. Sawada ◽  
H. Ichinose ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Diamond Thin Film ◽  
Growth Method ◽  
Step Growth ◽  
Film Synthesis
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