Effect of Low Energy Hydrogen Implants on Damage Caused by Argon Ion Beam Etching

ABSTRACTThe dry etching technologies reactive ion etching (RIE) and ion beam etching (IBE) have both been shown to cause a damaged layer at silicon surfaces. It has been demonstrated that this damage can be annealed out or, alternatively, it can be passivated with low energy hydrogen implants from a Kaufman ion source. This study further explores the hydrogen passivation approach by focusing on the effect of hydrogen implantation on damage caused by argon ion beam etching. The lighter hydrogen ions are actually shown ta cause more extensive damage than the heavier argon ions. However, by using low-energy hydrogen implants all damage, that present from the Ar and that generated during the hydrogen implant, can be passivated.

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Composite Nanowires from Ion Beam Modification of Si Nanowires

MRS Proceedings ◽

10.1557/proc-581-235 ◽

1999 ◽

Vol 581 ◽

Author(s):

X. T. Zhou ◽

H. Y. Peng ◽

N. G. Shang ◽

N. Wang ◽

I. Bello ◽

...

Keyword(s):

Reaction Pathway ◽

Ion Beam ◽

Ion Source ◽

Low Energy ◽

Hydrogen Ions ◽

Si Nanowires ◽

Interacting Particles ◽

Ion Beam Modification ◽

Ion Beam Deposition ◽

Beam Deposition

ABSTRACTComposite nanowires with typical diameters of 30-100nm, which consisted of Si, β-SiC, amorphous carbon were converted from Si nanowires by ion beam deposition. The Si nanorods were exposed to broad low energy ion beams. The low energy hydrocarbon, argon and hydrogen ions, generated in a Kaufman ion source, reacted with Si nanowires and formed the composite nanowires. It has been assumed that the reaction pathway to form the composite nanowires were driven by both thermal diffusion and kinetic energic of interacting particles.

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Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100115419 ◽

1975 ◽

Vol 33 ◽

pp. 358-359

Author(s):

M. Spector ◽

A. C. Brown

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Ectodermal Dysplasia ◽

Ion Beam ◽

Freeze Fracture ◽

Ion Current ◽

Ion Beam Etching ◽

Pili Torti ◽

Argon Ion ◽

Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

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Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

MRS Proceedings ◽

10.1557/proc-223-215 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 3

Author(s):

Richard B. Jackman ◽

Glenn C. Tyrrell ◽

Duncan Marshall ◽

Catherine L. French ◽

John S. Foord

Keyword(s):

Ion Beam ◽

Ion Beams ◽

Low Energy ◽

Ion Beam Etching ◽

Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

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TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0305 ◽

2011 ◽

Author(s):

Liew Kaeng Nan ◽

Lee Meng Lung

Keyword(s):

Sample Preparation ◽

Semiconductor Device ◽

Ion Beam ◽

Critical Dimension ◽

Low Energy ◽

Ex Situ ◽

Good Image Quality ◽

Ion Beam Etching ◽

Device Structures ◽

Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

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Low Energy 500 eV Focused Argon Ion Beam Provided by Multi-Ions Species Plasma FIB for Material Science Sample Preparations

Microscopy and Microanalysis ◽

10.1017/s1431927621000660 ◽

2021 ◽

Vol 27 (S1) ◽

pp. 20-22

Author(s):

Chengge Jiao ◽

Jeremy Graham ◽

Xu Xu ◽

Timothy Burnett ◽

Brandon van Leer

Keyword(s):

Material Science ◽

Ion Beam ◽

Low Energy ◽

Argon Ion

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Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

MRS Proceedings ◽

10.1557/proc-354-717 ◽

1994 ◽

Vol 354 ◽

Author(s):

Shuji Kiyohara ◽

Iwao Miyamoto

Keyword(s):

Surface Roughness ◽

Single Crystal ◽

Incidence Angle ◽

Ion Beam ◽

Etching Rate ◽

Hydrogen Ion ◽

Hydrogen Ions ◽

Ion Beam Etching ◽

Single Crystal Diamond ◽

Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

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Growth of diamond and diamond-like films using a low energy ion beam

Journal of Materials Research ◽

10.1557/jmr.1998.0323 ◽

1998 ◽

Vol 13 (8) ◽

pp. 2315-2320 ◽

Cited By ~ 8

Author(s):

Y. P. Guo ◽

K. L. Lam ◽

K. M. Lui ◽

R. W. M. Kwok ◽

K. C. Hui

Keyword(s):

Ion Beam ◽

Chemical Vapor ◽

Carbon Films ◽

Low Energy ◽

Hydrogen Passivation ◽

Heteroepitaxial Growth ◽

Ion Beam Deposition ◽

Additional Control ◽

Strain Release ◽

Beam Deposition

Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.

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