Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode

2013 ◽  
Vol 538 ◽  
pp. 324-327 ◽  
Author(s):  
Chao Xiong ◽  
An Cheng Xu ◽  
Xing Zhong Lu ◽  
Lei Chen ◽  
Xi Fang Zhu ◽  
...  
Keyword(s):  
Light Emission ◽  
Low Cost ◽  
Forward Bias ◽  
Growth Direction ◽  
Heterojunction Diode ◽  
Conduction Band Offset ◽  
Single Carrier ◽  
Linear Relationships ◽  
Voltage Curve

The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuI/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuI/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.

Fabrication and Characterization of p-CuSCN/n-Si Heterojunction Diode

2013 ◽  
Vol 321-324 ◽  
pp. 470-473
Author(s):  
Chao Xiong ◽  
Hong Chun Yuan ◽  
Lei Chen ◽  
Jin Xiao ◽  
Li Hua Ding ◽  
...  
Keyword(s):  
Light Emission ◽  
Low Cost ◽  
Forward Bias ◽  
Photovoltaic Devices ◽  
Heterojunction Diode ◽  
Conduction Band Offset ◽  
Single Carrier ◽  
Linear Relationships ◽  
Voltage Curve

The p-CuSCN /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal β-CuSCN films are polycrystalline nature. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuSCN/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 2.1 eV and 1.5 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuSCN/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuSCN/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.

scholarly journals Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction

2013 ◽  
Vol 7 (1) ◽  
pp. 29-32 ◽  
Author(s):  
Xiong Chao ◽  
Chen Lei ◽  
Yuan Hongchun
Keyword(s):  
Light Emission ◽  
Forward Bias ◽  
X Ray Diffraction ◽  
Conduction Band Offset ◽  
Single Carrier ◽  
Voltage Curve ◽  
Current Voltage ◽  
Layer Adsorption ◽  
Hole Current ◽  
Relationship Of

The p-CuSCN/n-Si heterojunction is fabricated by depositing CuSCN films on n-Si (111) films substrate using successive ionic layer adsorption and reaction (SULAR). CuSCN films show 􀀂-phase structure by virtue of X-ray diffraction (XRD) spectroscopy. ZnO/CuSCN heterojunctions exhibit good diode characteristics and photovoltaic effects with illumination form its current-voltage (I-V) measurements. The linear relationship of 1/C2 versus voltage curve implies that the built-in potential Vbi and the conduction band offset of the heterojunctions were found to be 2.1eV and 1.5eV, respectively. The forward conduction is determined by trap-assisted space charge limited current mechanism. At forward bias voltages, the electronic potential barrier is larger than holes in the p-CuSCN/n-Si heterojunction interface. In this voltage area, a single carrier injuction is induced and the main current of p-CuSCN/n-Si heterojunction is hole current. In addition, a band diagram of ZnO/CuSCN heterojunctions is also proposed to explain the transport mechanism. This heterojunction diode can be well used to light emission devices and photovoltaic devices.

Characterization of Microporous Silicon Fabricated by Immersion Scanning

1991 ◽  
Vol 256 ◽  
Author(s):  
E. Bassous ◽  
M. Freeman ◽  
J.-M. Halbout ◽  
S. S. lyer ◽  
V. P. Kesan ◽  
...  
Keyword(s):  
Light Emission ◽  
Forward Bias ◽  
Visible Region ◽  
Thermal Desorption Spectroscopy ◽  
Hydrogen Desorption ◽  
Si Substrates ◽  
Desorption Spectrum ◽  
Pn Junctions ◽  
Pl Intensity

ABSTRACTA novel immersion scanning technique for making microporous silicon has been successfully applied to blank and lithographically patterned Si substrates. The advantages of the method lie in its simplicity, speed and adaptability to large and odd-size substrates. The photoluminescence (PL) spectra of microporous Si show a continuous decrease in intensity between 200K and 2K, but are fully reversible. Thermal desorption spectroscopy on microporous Si shows a classic hydrogen desorption spectrum which coincides with a quenching of the PL intensity. Under constant excitation, a degradation of PL Intensity occurs in oxygen and wet nitrogen but is only partially reversible in dry N2. Microporous Si PN junctions exhibiting normal I-V characteristics have been successfully fabricated with standard Si VLSI processes. Visible light emission under forward bias is detected which increases linearly In Intensity with Input current. This is the first observation of electroluminescence in the visible region from microporous SI PN junctions.

Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects

2015 ◽  
Vol 821-823 ◽  
pp. 733-736 ◽  
Author(s):  
Yukimune Watanabe ◽  
Noriyasu Kawana ◽  
Tsuyoshi Horikawa ◽  
Kiichi Kamimura
Keyword(s):  
Gate Voltage ◽  
Light Emission ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Drain Current ◽  
High Density ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Emission Light

We have fabricated lateral MOSFETs on heteroepitaxial 3C-SiC films included high density of defects. Electrical characteristics of 3C-SiC MOSFETs and their temperature dependence were measured to discuss effects of defects on the electrical characteristics. A field effect mobility of 156 cm2/Vs was obtained at room temperature. After applying a drain voltage of 10 V or higher, the drain current - gate voltage curve shifted toward the positive gate voltage. This shift was caused mainly by the charge trapping in the gate oxide. The light emission was observed on the surface of the active MOSFET. The spatial distribution of the emission light from MOSFETs indicated that the charge was generated at the source edge of the gate channel.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

scholarly journals Microstructure and Thermoelectric Properties of (Bi0.48Sb1.52)Te3 Thick Films Prepared with Tape Casting Method

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 140
Author(s):  
Lichen Liu ◽  
Ziping Cao ◽  
Min Chen ◽  
Jun Jiang
Keyword(s):  
Thermoelectric Properties ◽  
Low Cost ◽  
Thick Films ◽  
Tape Casting ◽  
Casting Process ◽  
Casting Method ◽  
Glass Substrates ◽  
Conductive Films ◽  
Casting Technology

This paper reports the fabrication and characterization of (Bi0.48Sb1.52)Te3 thick films using a tape casting process on glass substrates. A slurry of thermoelectric (Bi0.48Sb1.52)Te3 was developed and cured thick films were annealed in a vacuum chamber at 500–600 °C. The microstructure of these films was analyzed, and the Seebeck coefficient and electric conductivity were tested. It was found that the subsequent annealing process must be carefully designed to achieve good thermoelectric properties of these samples. Conductive films were obtained after annealing and led to acceptable thermoelectric performance. While the properties of these initial materials are not at the level of bulk materials, this work demonstrates that the low-cost tape casting technology is promising for fabricating thermoelectric modules for energy conversion.

scholarly journals Compact Miniaturized Bioluminescence Sensor Based on Continuous Air-Segmented Flow for Real-Time Monitoring: Application to Bile Salt Hydrolase (BSH) Activity and ATP Detection in Biological Fluids

Chemosensors ◽  
2021 ◽  
Vol 9 (6) ◽  
pp. 122
Author(s):  
Aldo Roda ◽  
Pierpaolo Greco ◽  
Patrizia Simoni ◽  
Valentina Marassi ◽  
Giada Moroni ◽  
...  
Keyword(s):  
Bile Salt ◽  
Light Emission ◽  
Ex Vivo ◽  
Biological Fluids ◽  
Low Cost ◽  
Bile Salt Hydrolase ◽  
Segmented Flow ◽  
Active Substrate ◽  
Flat Spiral ◽  
Bsh Activity

A simple and versatile continuous air-segmented flow sensor using immobilized luciferase was designed as a general miniaturized platform based on sensitive biochemiluminescence detection. The device uses miniaturized microperistaltic pumps to deliver flows and compact sensitive light imaging detectors based on BI-CMOS (smartphone camera) or CCD technology. The low-cost components and power supply make it suitable as out-lab device at point of need to monitor kinetic-related processes or ex vivo dynamic events. A nylon6 flat spiral carrying immobilized luciferase was placed in front of the detector in lensless mode using a fiber optic tapered faceplate. ATP was measured in samples collected by microdialysis from rat brain with detecting levels as low as 0.4 fmoles. The same immobilized luciferase was also used for the evaluation of bile salt hydrolase (BSH) activity in intestinal microbiota. An aminoluciferin was conjugatated with chenodeoxycholic acid forming the amide derivative aLuc-CDCA. The hydrolysis of the aLuc-CDCA probe by BSH releases free uncaged aminoluciferin which is the active substrate for luciferase leading to light emission. This method can detect as low as 0.5 mM of aLuc-CDCA, so it can be used on real faecal human samples to study BSH activity and its modulation by diseases and drugs.

scholarly journals Theoretical and Empirical Characterization of Water as a Factor: Examples and Related Issues with the World Trade Model

Water ◽  
2021 ◽  
Vol 13 (4) ◽  
pp. 459
Author(s):  
Ignacio Cazcarro ◽  
Albert E. Steenge
Keyword(s):  
World Trade ◽  
Low Cost ◽  
Virtual Water ◽  
Considerable Change ◽  
Water Research ◽  
Trade Model ◽  
The World ◽  
Main Model ◽  
Selection Of

This article originates from the theoretical and empirical characterization of factors in the World Trade Model (WTM). It first illustrates the usefulness of this type of model for water research to address policy questions related to virtual water trade, water constraints and water scarcity. It also illustrates the importance of certain key decisions regarding the heterogeneity of water and its relation to the technologies being employed and the prices obtained. With regard to WTM, the global economic input–output model in which multiple technologies can produce a “homogeneous output”, it was recently shown that two different mechanisms should be distinguished by which multiple technologies can arise, i.e., from “technology-specific” or from “shared” factors, which implies a mechanism-specific set of prices, quantities and rents. We discuss and extend these characterizations, notably in relation to the real-world characterization of water as a factor (for which we use the terms technology specific, fully shared and “mixed”). We propose that the presence of these separate mechanisms results in the models being sensitive to relatively small variations in specific numerical values. To address this sensitivity, we suggest a specific role for specific (sub)models or key choices to counter unrealistic model outcomes. To support our proposal we present a selection of simulations for aggregated world regions, and show how key results concerning quantities, prices and rents can be subject to considerable change depending on the precise definitions of resource endowments and the technology-specificity of the factors. For instance, depending on the adopted water heterogeneity level, outcomes can vary from relatively low-cost solutions to higher cost ones and can even reach infeasibility. In the main model discussed here (WTM) factor prices are exogenous, which also contributes to the overall numerical sensitivity of the model. All this affects to a large extent our interpretation of the water challenges, which preferably need to be assessed in integrated frameworks, to account for the main socioeconomic variables, technologies and resources.

scholarly journals Synthesis and Theoretical Investigation Using DFT of 2,3-Diphenylquinoxaline Derivatives for Electronic and Photovoltaic Effects

2021 ◽  
Author(s):  
Dorota Zając ◽  
Dariusz Przybylski ◽  
Jadwiga Sołoducho
Keyword(s):  
Solar Cells ◽  
Acrylic Acid ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Molecular Design ◽  
Low Cost ◽  
Design Synthesis ◽  
Semiconducting Properties ◽  
Homo Lumo

AbstractDeveloping effective and low‐cost organic semiconductors is an opportunity for the development of organic solar cells (OPV). Herein, we report the molecular design, synthesis and characterization of two molecules with D–A–D–A configuration: 2-cyano-3-(5-(8-(3,4-ethylenodioxythiophen-5-yl)-2,3-diphenylquinoxalin-5-yl)thiophen-2-yl)acrylic acid (6) and 2-cyano-3-(5-(2,3-diphenyl-8-(thiophen-2-yl)quinoxalin-5-yl)thiophen-2-yl)acrylic acid (7). Moreover, we investigated the structural, theoretical and optical properties. The distribution of HOMO/LUMO orbitals and the values of the ionization potential indicate good semiconducting properties of the compounds and that they can be a bipolar material. Also, the optical study show good absorption in visible light (λabs 380–550 nm). We investigate the theoretical optoelectronic properties of obtained compounds as potential materials for solar cells.

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