Application of Analogue Amorphous Silicon Memory Devices to Resistive Synapses for Neural Networks
Keyword(s):
Op Amps
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ABSTRACTThe amorphous silicon memory device shows promise as an analogue weight element in neural networks. The device resistance can be programmed to within 5% of any specific value between lkΩ and lMΩ using 10ns to 1μ voltage pulses in the range 1–5V. In this paper we describe the physical structure of the element and its electrical characteristics. Finally, a simple example is discussed of a small neural network implementing the EXOR function using amorphous silicon memory elements as a resistive array of weights and external op-amps as the current summing nodes.
1993 ◽
Vol 04
(04)
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pp. 327-332
Keyword(s):
2019 ◽
Vol 2019
(1)
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pp. 153-158
2020 ◽
Vol 64
(3)
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pp. 30502-1-30502-15
2019 ◽
Vol 3
(3)
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1992 ◽
Vol 26
(9-11)
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pp. 2461-2464
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Keyword(s):
2020 ◽
Vol 16
(5)
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pp. 584-591
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