Effects of Additive Gas on SiO2 Etching

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasuhiro Miyakawa ◽  
Jun Hashimoto ◽  
Naokatsu Ikegami ◽  
Jun Kanamori
Keyword(s):  
Integrated Circuit ◽  
Vertical Profile ◽  
Etch Rate ◽  
Critical Dimension ◽  
Key Technology ◽  
Precise Control ◽  
Heavily Doped ◽  
Etched Surface ◽  
Sio2 Etching

ABSTRACTPrecise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that N2 addition to Ar/CHF3/CF4 sharpens etched profile with CD loss kept small. And N2 addition also increases etch rate without a heavy deterioration of selectivity of SiO2 versus heavily doped n-type poly cry stall ine Si(n+ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface.

Etch Rate and Surface Morphology of Plasma Etched Glass Substrates

2000 ◽  
Vol 657 ◽  
Author(s):  
Junting Liu ◽  
Nikolay I. Nemchuk ◽  
Dieter G. Ast ◽  
J. Gregory Couillard
Keyword(s):  
Plasma Etching ◽  
Glass Ceramic ◽  
Etch Rate ◽  
Glass Ceramics ◽  
Similar Rate ◽  
Optical Mems ◽  
Glass Substrates ◽  
Rate Limiting Step ◽  
Green Glass ◽  
Etched Surface

ABSTRACTMicro-machined transparent components are of interest for optical MEMS and miniaturized biological systems. The glass ceramic GC6 developed by Corning is optically transparent, has a softening point in excess of 900°C, and a thermal expansion coefficient matched to silicon. These properties make it useful for the construction of devices that combine thin film silicon electronics with MEMS systems.Both the ceramic precursor (green glass) and the glass ceramic etch at a similar rate, about 1/3 to 1/4 of that of SiO2 etched under the same conditions, indicating that chemistry rather than microstructure control the etch rate. The cleaning steps used to clean the glass precursor profoundly influence the degree of surface roughness that develops during subsequent plasma etching. In glass ceramics, the morphology of plasma etched surface is always very smooth and independent of the cleaning steps used. Assuming that the removal of spinel crystals is the rate limiting step in plasma etching glass ceramics can explain this observation.

The Selectivity of Reactive Ion Etch of Ga0.5LIn0.49P/Gaas

1994 ◽  
Vol 337 ◽  
Author(s):  
J.W. Wu ◽  
S.H. Chan ◽  
K.C. Lin ◽  
C.Y. Chang ◽  
E.Y. Chang
Keyword(s):  
Etch Rate ◽  
Etching Rate ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Gas Mixture ◽  
Precise Control

ABSTRACTThe Ga0.51In0.49p/GaAs system has better desired property (ΔEC >ΔEV) than the conventional AlGaAs/GaAs system for heterojunction bipolar transistor (HBT) application. However, in the fabrication of HBTs, a precise control of the etch of the epilayer is very important. In this study, CH4/H2 and BCl3/SF6 were used for the reactive ion etch of the Ga0.51In0.49P/GaAs. It is found that the etch rate of Ga0.51In0.49P could be higher than that of GaAs with CH4/H2 gas mixture under appropriate etching conditions. While in the case of BCl3/SF6, the etching rate of GaAs could be much higher than that of the Ga0.51In0.49P. By properly using CH4/H2 and BCl3/SF6, the fabrication of Ga0.51In0.49P-based device using reactive ion etch could be easily achieved.

Anisotropic Etching of Heavily Doped Polysilicon by a Hot Cl2 Molecular Beam

1990 ◽  
Vol 201 ◽  
Author(s):  
T. Ono ◽  
S. Hiraoka ◽  
K. Suzuki
Keyword(s):  
Etch Rate ◽  
Molecular Beam ◽  
Anisotropic Etching ◽  
Free Jet ◽  
Etching Condition ◽  
Heavily Doped ◽  
Nitrogen Radical

AbstractAnisotropic etching of n+ poly-Si is achieved using a hot Cl2 molecular beam and a sidewall protection technique. A hot molecular beam is produced by a free jet expansion of a gas heated in a furnace. A nitrogen radical beam is used to prevent the sidewall etching. The etch rate of n+ poly-Si is 4.3 nm/min at the anisotropic etching condition.

The Benefits of Process Parameter Ramping During The Plasma Etching of High Aspect Ratio Silicon Structures

1998 ◽  
Vol 546 ◽  
Author(s):  
J. Hopkins ◽  
H. Ashraf ◽  
J. K. Bhardwaj ◽  
A. M. Hynes ◽  
I. Johnston ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
Etch Rate ◽  
Critical Dimension ◽  
Optical Devices ◽  
Aspect Ratios ◽  
Dimension Control ◽  
Silicon Structures ◽  
High Etch Rate ◽  
Product Specifications

AbstractIn the ongoing enhancement of MEMS applications, the STS Advanced Silicon Etch, (ASETM). process satisfies the demanding requirements of the industry. Typically, highly anisotropic. high aspect ratios profiles with fine CD (critical dimension) control are required. Selectivities to photoresist of 150:1 with Si etch rates of up to 10μm/min are demonstrated. Applications range from shallow etched optical devices to through wafer membrane etches. This paper details some of the fundamental trends of the ASETM process and goes on to discuss how the process has been enhanced to meet product specifications. Parameter ramping is a powerful technique used to achieve the often-conflicting requirements of high etch rate with good profile/CD control. The results are presented in this paper.

scholarly journals Diamond Etching Beyond 10 μm with Near-Zero Micromasking

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Marie-Laure Hicks ◽  
Alexander C. Pakpour-Tabrizi ◽  
Richard B. Jackman
Keyword(s):  
Surface Roughness ◽  
Etch Rate ◽  
Chemical Resistance ◽  
High Quality ◽  
High Performing ◽  
Etched Surface

Abstract To exploit the exceptional properties of diamond, new high quality fabrication techniques are needed to produce high performing devices. Etching and patterning diamond to depths beyond one micron has proven challenging due to the hardness and chemical resistance of diamond. A new cyclic Ar/O2 - Ar/Cl2 ICP RIE process has been developed to address micromasking issues from the aluminium mask by optimising the proportion of O2 in the plasma and introducing a preferential “cleaning” step. High quality smooth features up to, but not limited to, 10.6 μm were produced with an average etched surface roughness of 0.47 nm at a diamond etch rate of 45 nm/min and 16.9:1 selectivity.

Elevated Temperature Reactive Ion Etching of GaAs and AIGaAs in C2H6 / H2

1989 ◽  
Vol 158 ◽  
Author(s):  
S. J. Pearton ◽  
W. S. Hobson ◽  
K. S. Jones
Keyword(s):  
Elevated Temperature ◽  
Surface Morphology ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Atomic Composition ◽  
Hydrogen Passivation ◽  
Ion Etching ◽  
Polymer Deposition ◽  
Etched Surface

ABSTRACTThe temperature dependence of etch rate, surface morphology and atomic composition, and depth of hydrogen passivation of Si dopants in n-type GaAs and AIGaAs has been measured for reactive ion etching in C2H6 /H2. The etching of GaAs shows an increase of a factor of two between 150 and 250°C, decreasing at higher temperatures, while there is no temperature dependence for the etch rate of AlGaAs over the range 50-350°C. The As-to-Ga ratio in the nearsurface region of GaAs remains unchanged over the whole temperature range investigated and there is no polymer deposition. The etched surface morphology is smooth for both GaAs and AIGaAs for all temperatures while the depth of Si dopant passivation by hydrogen shows an increase with increasing substrate temperature during the etching treatment.

Silicon Electromachining Processes in Aqueous Solutions

1998 ◽  
Vol 546 ◽  
Author(s):  
M. Kovler ◽  
D. Starosvetsky ◽  
Y. Nemirovsky ◽  
J. Yahalom
Keyword(s):  
Aqueous Solutions ◽  
Etch Rate ◽  
Cathodic Polarization ◽  
High Rate ◽  
Alkaline Solutions ◽  
Potential Range ◽  
Etched Surface

AbstractHigh rate of etching of silicon was obtained by non conventional cathodic polarization in alkaline solutions. When the process was carried out at potentials more negative than −10 V it caused electropolishing of the etched surface. Shifting the potential in the cathodic direction increases the etch-rate parabolically and enhances the effect of polishing. The etch-rate increased by more than two orders of magnitude over the potential range from −10 to −40 V, and reached the value of about 250 micron/hour at 60 °C. Additionally, the etch-rate of n-Si was found to be markedly enhanced by illumination.

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