Nucleation of Tungsten on Titanium Nitride with Hydrogen Reduction of Tungsten Hexafluoride
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ABSTRACTIn this work, a hydrogen (H2) reduction process has been developed which gives tungsten (W) nucleation on titanium nitride (TiN) adhesion layers with a very short incubation time, eliminating the need for a silane (SiH4reduced seed layer. The nucleation was found to be strongly dependent on the following factors: temperature of the substrate, total pressure in chamber, and gas introduction sequence into the reactor. Theenhanced nucleation rate has been explained based on two competing reactions: dissociation of H2, and formation of titanium subfluorides on the TiN surface.
2018 ◽
Vol 137
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pp. 389-397
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1986 ◽
Vol 32
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pp. 1966-1968
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1982 ◽
Vol 65
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pp. 1129-1133
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