A Low Frequency Remote Plasma Rapid Thermal CVD System with Face Down Electrostatic Clamp Wafer Holder

1993 ◽  
Vol 303 ◽  
Author(s):  
Marlio J. C. Bonfim ◽  
Jacobus W. Swart ◽  
Cristian E. M. Velasco ◽  
Juscelino H. Okura ◽  
Patrick B. Verdonck

ABSTRACTA multiprocess CVD system with the following main features is designed and constructed: the wafer holder is made of a Si wafer with diameter larger than the process wafers. This larger holder produces a better temperature uniformity on the process wafer. A good thermal contact between holder and process wafer is obtained by an electrostatic clamp. The holder supports the process wafer facing down. A remote plasma is produced in a small chamber inside the process chamber. The 100 KHz RF frequency keeps the system very simple and cheap while still reasonable ionization is achieved. SiO2 films were deposited using SiH4 and O2 with and without remote plasma of O2. At low temperatures and 1.5 Torr, process activation energies of about 0.9 and 0.3 eV were obtained respectively.

1991 ◽  
Vol 30 (Part 1, No. 1) ◽  
pp. 180-181 ◽  
Author(s):  
Shinji Suganomata ◽  
Itsuo Ishikawa ◽  
Junichi Tanaka ◽  
Hideo Ozaki
Keyword(s):  

1983 ◽  
Vol 28 ◽  
Author(s):  
Uwe Köster ◽  
Christoph Caesar

ABSTRACTRapidly solidified ribbons of Cu-Fe alloys with iron contents up to 20 at.−% have been prepared by melt-spinning. Optical and electron microscopy as well as x-ray and electron diffraction techniques were used to characterize quantitatively the microstructure, i.e., grain size and shape, solubility of iron, lattice parameter, volume fraction and distribution of precipitated iron-particles, etc.Whereas the free surfaces of melt-spun Cu-Fe ribbons have been found to be very smooth, the contact surfaces usually consist of isolated areas of good thermal contact with small equiaxed grains separated by bands without contact during casting and therefore poor heat transfer. The cross sections of the ribbons generally exhibit a strong anisotropy in their microstructure: very fine crystals adjacent to the contact surface develop into narrow columnar grains, generally significantly elongated and extending across the whole section. The average columnar width of the grains has been found to decrease significantly with increasing iron content. Precipitation of iron not only depends on the iron content but also on the distance from the contact surface.


2005 ◽  
Vol 872 ◽  
Author(s):  
Joondong Kim ◽  
Wayne A. Anderson ◽  
Young-Joo Song

AbstractNickel monosilicide (NiSi) nanowires (NWs) have been fabricated by the metal induced growth (MIG) method. Ni as a catalyst was deposited on a SiO2 coated Si wafer. In a DC magnetron sputtering system, the Ni reacts at 575°C with sputtered Si to give nanowires. Different metal catalysts (Co and Pd) were used to prove the MIG NW growth mechanism. NiSi NWs were a single crystal structure, 20-80 nm in diameter and 1-10 μm in length. The linear NW growth property provided nanobridge formation in a trenched Si wafer. The trenches in a Si wafer were made by dry etching and a simple, conventional metal lift off method. The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of ‘self and direct’ assembled ‘bottom-up’ fabrication concepts.


Author(s):  
Danie`le Fournier ◽  
Jean Paul Roger ◽  
Christian Fretigny

Lateral heat diffusion thermoreflectance is a very powerful tool for determining directly the thermal diffusivity of layered structures. To do that, experimental data are fitted with the help of a heat diffusion model in which the ratio between the thermal conductivity k and the thermal diffusivity D of each layer is fixed, and the thermal properties of the substrate are known. We have shown in a previous work that it is possible to determine independently the thermal diffusivity and the thermal conductivity of a metallic layer deposited on an insulator, by taking into consideration all the data obtained at different modulation frequencies. Moreover, it is well known that to prevent a lack of adhesion of a gold film deposited on substrates like silica, an intermediate very thin (Cr or Ti) layer is deposited to assure a good thermal contact. We extend our previous work: the asymptotic behaviour determination of the surface temperature wave at large distances from the modulated point heat source for one layer deposited on the substrate to the two layers model. In this case (very thin adhesion coating whose thermal properties and thickness are known), it can be establish that the thermal diffusivity and the thermal conductivity of the top layer can still be determined independently. It is interesting to underline that the calculus can also be extended to the case of a thermal contact resistance which has often to be taken into account between two solids. We call thermal resistance a very thin layer exhibiting a very low thermal conductivity. In this case, the three parameters we have to determine are the thermal conductivity and the thermal diffusivity of the layer and the thermal resistance. We will show that, in this case, the thermal conductivity of the layer is always obtained independently of a bound of the couple thermal resistance – thermal diffusivity, the thermal diffusivity being under bounded and the thermal resistance lower bounded. Experimental results on thin gold layers deposited on silica with and without adhesion layers are presented to illustrate the method. Discussions on the accuracy will also be presented.


2009 ◽  
Vol 19 (1) ◽  
pp. 015012 ◽  
Author(s):  
I T Martin ◽  
M A Wank ◽  
M A Blauw ◽  
R A C M M van Swaaij ◽  
W M M Kessels ◽  
...  

2014 ◽  
Vol 2 (36) ◽  
pp. 7570-7574 ◽  
Author(s):  
Yijun Zhang ◽  
Wei Ren ◽  
Zhuangde Jiang ◽  
Shuming Yang ◽  
Weixuan Jing ◽  
...  

Atomic-resolution image of a graphene sheet synthesized by remote plasma-enhanced atomic layer deposition at low temperatures.


1990 ◽  
Author(s):  
Brian G. Anthony ◽  
Ting-Chen Hsu ◽  
Louis H. Breaux ◽  
Rong Z. Qian ◽  
Sanjay K. Banerjee ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document