Realization Of X-Ray Lithography Masks Based On Diamond Membranes

1993 ◽  
Vol 306 ◽  
Author(s):  
M. F. Ravet ◽  
A. Gicquel ◽  
E. Anger ◽  
Z. Z. Wang ◽  
Y. Chen ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Nucleation And Growth ◽  
Local Conditions ◽  
X Ray ◽  
Deposition Parameters ◽  
Deposition Conditions

AbstractDeposition parameters acting on nucleation and growth local conditions have been optimized in a bell jar microwave plasma reactor to obtain polycrystalline diamond thin films compatible with X-ray membrane requests. The microstructure and the chemical quality of the films were estimated by SEM and Raman spectroscopy respectively, the roughness was evaluated by AFM experiments and the residual stress was deduced from the substrate deflection method. Membranes were obtained by removing the silicon substrate on 15 mm diameter circular windows. The optical transparency depending on deposition conditions was optimized up to 65% at 630 nm for 1 μm thickness. A high resolution additive mask process, based on well taut membranes and low stress electroplated gold absorber, was carried out. Micrometric and submicrometric mask patterns were generated in photoresists both by electron beam lithography with a nanopattern generator and by X-ray lithography using the synchrotron radiation facility implemented at LURE-Orsay. Despite the diamond films roughness of the order of 30 nm, well defined dots and lines as narrow as 100–200 nm could be obtained.

The Initial Stages of Plasma Synthesis of Diamond Films

1988 ◽  
Vol 129 ◽  
Author(s):  
R. Meilunas ◽  
M.S. Wong ◽  
K. Sheng ◽  
T.P. Ong ◽  
R.P.H. Chang
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Plasma Synthesis ◽  
X Ray Diffraction ◽  
Diamond Nucleation ◽  
X Ray ◽  
Deposition Parameters ◽  
Starting Conditions ◽  
Size And Morphology

ABSTRACTThe effects of plasma starting conditions on the initial stages of diamond nucleation and growth in a microwave plasma have been studied as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through various analytical measurements. The diamond films are characterized with Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. Finally, methods are described for reproducibly controlling the grain size and morphology of the diamond films for tribological and abrasive applications.

Residual Stresses Analysis in Diamond Layers Deposited on Various Substrates

1995 ◽  
Vol 383 ◽  
Author(s):  
D. Rats ◽  
L. Bimbault ◽  
L. Vandenbulcke ◽  
R. Herbin ◽  
K. F. Badawi
Keyword(s):  
Residual Stresses ◽  
Thermal Stresses ◽  
Film Growth ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxygen Gas ◽  
Deposition Conditions

ABSTRACTA major problem for diamond coating applications is that diamond films tend to exhibit poor adherence on many. substrates and typically disbond at thicknesses of the order of few micrometers due especially to residual stresses. Residual stresses in diamond are composed of thermal expansion mismatch stresses and intrinsic stresses induced during film growth. Diamond films were deposited in a classical microwave plasma reactor from hydrocarbon-hydrogen-oxygen gas mixtures. Thermal stresses were directly calculated from Hook's law. On silicon substrate, intrinsic stresses were deduced by difference from measurements of total stresses either by the curvature method or by X-ray diffraction using the sin 2ψ method. These investigations allow us to discuss the origin of the intrinsic stresses. The residual stress level was also investigated by Raman spectroscopy as a function of the deposition conditions and substrate materials (SiO2, Si3N4, Si, SiC, WC-Co, Mo and Ti-6A1-4V). We show that the thermal stresses are often preponderant.

scholarly journals Characterizations of microwave plasma CVD grown polycrystalline diamond coatings for advanced technological applications

2014 ◽  
Vol 8 (2) ◽  
pp. 69-80 ◽  
Author(s):  
Awadesh Mallik ◽  
Nandadulal Dandapat ◽  
Shirshendu Chakraborty ◽  
Ashok Mandal ◽  
Jiten Ghosh ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Polycrystalline Diamond ◽  
Potential Candidate ◽  
Diamond Coatings ◽  
Etching Technique ◽  
X Ray ◽  
Microwave Plasma Cvd ◽  
Scanning Electronmicroscopy

Polycrystalline diamond (PCD) coatings ranging from few microns to several hundred microns thickness have been grown by 915MHz microwave plasma reactor with 9000W power. The coatings were deposited on 100mm diameter silicon (Si) substrate from few hours to several days of continuous runs. PCD coatings were made freestanding by wet chemical etching technique. The deposited PCDs were evaluated by X-ray diffraction (XRD), scanning electronmicroscopy (SEM), Raman spectroscopy,X-ray photoelectron spectroscopy (XPS) for physical characterization and compared with authors? earlier work. Refractive index of 2.41 was obtained at 633 nm wavelength and a maximum of 6.6 W?cm-1K-1 value for thermal conductivity could be achieved with the grown coatings. The values are well above the existing non-diamond heat spreading substrates, which makes the grown PCDs as candidates for heat spreaders in different technological applications. High refractive in- dex along with translucent nature of the white freestanding PCDs, make them potential candidate for optical windows.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Particle-Assisted Oriented Deposition of Diamond Thin Films

1996 ◽  
Vol 423 ◽  
Author(s):  
Dong-Gu Lee ◽  
Rajiv K. Singh
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray ◽  
Diamond Particles ◽  
Film Synthesis ◽  
Diamond Powders ◽  
Hot Filament

AbstractWe have developed a method for <111> oriented diamond film synthesis using micron-sized diamond particles. Different size of diamond powders were electrophoretically seeded on silicon substrates using diamond suspensions in organic solvents (acetone, methanol, and ethanol). Diamond suspension in acetone was found to be the best for obtaining uniform diamond seeding by electrophoresis. The thickness of diamond seeded films was changed by varying the applied voltage to observe the effect on the orientation of diamond particles. Then diamond films were deposited by the hot filament chemical vapor deposition (HFCVD) process. A preferred orientation with <111> direction normal to the substrate was obtained for monolayer coatings. The surface morphology, crystal orientation, and quality of diamond films were investigated using scanning electron microscopy, x-ray diffractometry, and Raman spectroscopy.

Properties of Li-Doped ZnO Films Deposited on Diamond Films

2013 ◽  
Vol 544 ◽  
pp. 234-237
Author(s):  
Mei Ai Lin ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Bing Ren ◽  
...  
Keyword(s):  
Diamond Films ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
Reactive Gas

Li-doped zinc oxide (ZnO) films were deposited on nucleation side of freestanding diamond (FSD) films by the radio frequency magnetron sputtering method. The effect of oxygen partial pressure on structural, optical and electrical properties of the ZnO films was investigated by X-ray diffraction (XRD) Raman spectroscopy, semiconductor characterization system and Hall effect measurement system. The results showed that the introduction of oxygen as a reactive gas was helpful to improve the crystalline quality of Li-doped ZnO films.

EFFECTS OF HYDROGEN GAS FLOW RATIO ON THE QUALITY OF NANO-DIAMOND FILMS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 876-880
Author(s):  
S. G. Wang ◽  
Q. Zhang ◽  
D. J. Yang ◽  
S. F. Yoon ◽  
J. Ahn ◽  
...  
Keyword(s):  
Grain Size ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gaseous Mixture ◽  
Hydrogen Gas ◽  
Chemical Vapor Deposition Method ◽  
Flow Ratio ◽  
Gas Flow Ratio

In this paper, we studied the effects of hydrogen gas flow ratio of [H2]/[N2 + CH4 + H2] on the quality of nanometer diamond (nano-diamond) films prepared by microwave plasma enhanced chemical vapor deposition method. Nano-diamond films were deposited on the silicon substrates from a gaseous mixture of nitrogen, methane and hydrogen. The experimental results show that if only using a gaseous mixture of nitrogen and methane, although we can obtain nano-diamond films with a grain size of about 5nm, the diamond films contain much non-diamond components. With hydrogen addition, and with increasing the hydrogen gas flow ratio from 1 to 10%, the non-diamond components in the films are significantly reduced and the grain size of the films increases from 5nm to 60nm. However optical transmittance of the films increases with increasing hydrogen gas flow ratio from 1 to 7% because of an improvement of film quality, and then decreases with further increasing hydrogen gas flow ratio owing to the increase of film roughness.

X-ray Photoelectron Spectroscopy of the Interface Between Diamond Films and Tantalum Substrates

1993 ◽  
Vol 317 ◽  
Author(s):  
M.M. Waitew ◽  
S. Ismat Shah
Keyword(s):  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Stages Of Growth ◽  
Diamond Peak

ABSTRACTDiamond films were deposited in a microwave plasma chemical vapor deposition (MPCVD) system on Ta substrates using a mixture of hydrogen and methane gases. The films were grown for varying lengths of time to provide samples with no diamond growth to a continuous diamond film. These films were analyzed using X-ray photoelectron spectroscopy (XPS) in order to understand the time dependent interactions between the substrate and the incoming carbon flux. Photoelectron peaks in the Ta 4f, C Is and Ols regions have been analyzed. In the initial stages of growth, a layer of carbide forms on the substrate. As the substrate becomes supersaturated with carbon, graphite starts to form on the surface. A diamond peak begins to appear after about 30 Minutes of deposition.

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