The Intercorrelation Between Microstructure and Chemicalmechanical Polish of Metal Thin Films

1999 ◽  
Vol 564 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Ying-Lang Wang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Removal Rate ◽  
Metal Films ◽  
The Other ◽  
Metal Thin Films ◽  
Other Hand ◽  
Underlying Mechanisms ◽  
Table Speed

AbstractThe correlation between microstructures of Al and W metal thin films and their respective CMP performance is investigated. It is found that CMP removal rate decreases with increasing grain size. In both cases, the textures of the metal films are altered and their resistivity increased after CMP. The phenomenon is more pronounced for polish under a greater down force. The table speed, on the other hand, has only minimum effects on microstructure and resistivity. The possible underlying mechanisms leading to this phenomenon are proposed and their potential impacts on metallization reliability is discussed.

X-Ray Measurement of Residual Stress Distribution in Sputtered Cu Thin Films

2012 ◽  
Vol 706-709 ◽  
pp. 1649-1654 ◽  
Author(s):  
Yoshiaki Akiniwa ◽  
Taku Sakaue
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Grain Size ◽  
Stress Distribution ◽  
Residual Stress Distribution ◽  
The Other ◽  
X Ray ◽  
Maximum Value ◽  
Other Hand ◽  
Target Power

Three kinds of copper thin films were fabricated by RF-magnetron sputtering. The target power was selected to be 10 and 150 W to change the properties of the films. Thin glass sheet was used as a substrate. For the target power of 150 W, the deposition time was selected to be 7 and 40 min. The thickness was 0.6 μm and 2.9 μm, and the grain size measured was 243 nm and 450 nm, respectively. The grain size of thicker film was larger than that of thinner one. On the other hand, for the target power of 10 W, the thickness and grain size were 2.4 μm and 54 nm, respectively. The grain size depends on the target power. The residual stress distribution in the films was measured by X-ray method. Several methods such as the grazing incidence X-ray diffraction method, the constant penetration depth method and the conventional sin2ψ method were adopted. The measured weighted average stress increased with increasing depth. After taking the maximum value at about 0.3 μm from the surface, the value decreased with increasing depth. The stress distribution near the surface in the films deposited at 150 W was almost identical irrespective of thickness. On the other hand, for the target power of 10 W, the stress distribution shifted to compression side. The reason could be explained by the effect of the thermal residual stress. The real stress distribution was estimated by using the optimization technique. The stress took the maximum value at 0.5 μm from the surface, and was compressive near the substrate. .

Magnetotransport Properties in Semimetallic Bismuth Thin Films

2004 ◽  
Vol 449-452 ◽  
pp. 1061-1064 ◽  
Author(s):  
K.I. Lee ◽  
M.H. Jeun ◽  
J.M. Lee ◽  
J.Y. Chang ◽  
S.H. Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Room Temperature ◽  
The Other ◽  
Trigonal Axis ◽  
Spintronic Device ◽  
Sputtered Films ◽  
Other Hand ◽  
Device Applications

The magnetotransport properties of the electroplated and sputtered Bi thin films have been investigated in the range 4 – 300 K. A marked increase from 5,200 % to 80,000 % in the ordinary magnetoresistance (MR) for the electroplated Bi thin film was observed after thermal anneal at 4 K. The MR ratios for the as-grown and the annealed Bi thin films were found to exhibit 560 % and 590 %, respectively, at 300 K. On the other hand, the MR for the sputtered Bi film grown by sputtering was hardly observed at 4 and 300 K, whereas the MR ratios after anneal were found to reach 30,000 % at 4 K and 600 % at 300 K. We find that the room temperature MR in the sputtered films depends on the trigonal-axis oriented microstructures and grain size, in contrast to the electroplated films. Our results demonstrate the very large room temperature MR in the electroplated and sputtered Bi thin films, which can be used for spintronic device applications.

scholarly journals Emergence of cultural intelligence and global mindset capital: a multilevel model

2016 ◽  
Vol 24 (2) ◽  
pp. 106-122 ◽  
Author(s):  
Jase R. Ramsey ◽  
Amine Abi Aad ◽  
Chuandi Jiang ◽  
Livia Barakat ◽  
Virginia Drummond
Keyword(s):  
Multilevel Model ◽  
Cultural Intelligence ◽  
The Other ◽  
Global Mindset ◽  
Firm Level ◽  
Content Type ◽  
Individual Level ◽  
Other Hand ◽  
Underlying Mechanisms ◽  
Conceptual Study

Purpose The purpose of this paper is to establish under which conditions researchers should use the constructs cultural intelligence (CQ) and global mindset (GM). The authors further seek to understand the process through which these constructs emerge to a higher level and link unit-level knowledge, skills and abilities (KSAs) capital to pertinent firm-level outcomes. Design/methodology/approach This paper is a conceptual study with a multilevel model. Findings This paper differentiates two similar lines of research occurring concordantly on the CQ and GM constructs. Next, the authors develop a multilevel model to better understand the process through which CQ and GM emerge at higher levels and their underlying mechanisms. Finally, this paper adds meaning to the firm-level KSAs by linking firm-level KSAs capital to pertinent firm-level outcomes. Research limitations/implications The conclusion implies that researchers should use CQ when the context is focused on interpersonal outcomes and GM when focused on strategic outcomes. The multilevel model is a useful tool for scholars to select which rubric to use in future studies that have international managers as the subjects. The authors argue that if the scholar is interested in an individual’s ability to craft policy and implement strategy, then GM may be more parsimonious than CQ. On the other hand, if the focus is on leadership, human resources or any other relationship dependent outcome, then CQ will provide a more robust measure. Practical implications For practitioners, this study provides a useful tool for managers to improve individual-level commitment by selecting and training individuals high in CQ. On the other hand, if the desired outcome is firm-level sales or performance, the focus should be on targeting individuals high in GM. Originality/value This is the first theoretical paper to examine how CQ and GM emerge to the firm level and describe when to use each measure.

PTCDA Films Deposited by Ionized Beam Method

1993 ◽  
Vol 316 ◽  
Author(s):  
Hiroaki Usui ◽  
Kiyoshi Kashihara ◽  
Kuniaki Tanaka ◽  
Seizo Miyata
Keyword(s):  
Thin Films ◽  
Molecular Orientation ◽  
Chemical Structure ◽  
Chemical Change ◽  
The Other ◽  
Ion Acceleration ◽  
Ionization Condition ◽  
Other Hand ◽  
Beam Method

ABSTRACTThin films of 3,4,9,10-perylenetetracarboxylic-dianhydride (PTCDA) were deposited by an ionized beam method. The molecular orientation and chemical structure of the films were studied in connection with ionization and ion acceleration conditions. At a low ionization condition, the molecules are oriented in parallel with the substrate, and the crystallinity was improved by an appropriate ion acceleration. At higher ionization conditions, on the other hand, ion acceleration resulted in a loss of crystallinity. Deposited molecules undergo chemical change in such a condition, leading to dissociation of dianhydride groups.

Growth of Epitaxial Site-Engineered Bi4Ti3O12-Basded Thin Films by Mocvdand Their Characterization

2002 ◽  
Vol 748 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Tomohiro Sakai ◽  
Takayuki Watanabe ◽  
Minoru Osada ◽  
Masato Kakihana ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Spontaneous Polarization ◽  
Chemical Vapor ◽  
The Other ◽  
Other Hand ◽  
La Substitution ◽  
Lower Temperature

ABSTRACTThin films of BIT, La-substituted BIT (BLT) and La- and V-cosubstituted BIT(BLTV) were epitaxially grown on SrRuO3//SrTiO3 substrates at 850°C by metalorganic chemical vapor deposition (MOCVD), and their electrical properties were systematically compared. All films on (100), (110) and (111)-oriented substrates were epitaxially grown with (001)-, (104)-/(014)-and (118) –preferred orientations, respectively. The leakage current density of the BLTV film was almost the same with that of the BLT film, but was smaller than that of BIT film, suggesting that the La substitution contributed to the decrease of the leakage current density especially in pseudoperovskite layer. Spontaneous polarization of the BLTV film was estimated to be almost the same with the BLT film but was smaller that that of the BIT film. This is explained by the decrease of Tc with the La substitution, while V did not contribute to the change of the Curie temperature (Tc ). On the other hand, the coercive field (Ec) value of the BLTV was smaller than that of the BIT and the BLT films. As a result, La substitution contributed to the decrease of the leakage current density together with the decrease of the spontaneous polarization due to the decrease of the Tc. On the other hand, V substitution contributes to the decrease of the defects that suppress the domain motion and increases the Ec value. Therefore, each substitution of La and V plays different roles and this contribution is remarkable for the films deposited at lower temperature.

Three-level hierarchal modeling of gecko toe adhesion

2008 ◽  
Vol 1132 ◽  
Author(s):  
B. Chen ◽  
P. D. Wu ◽  
H. Gao
Keyword(s):  
Body Weight ◽  
Adhesive Strength ◽  
Adhesion Energy ◽  
Intermediate Level ◽  
The Other ◽  
Other Hand ◽  
Peeling Strength ◽  
Underlying Mechanisms ◽  
Gecko Adhesion

ABSTRACTThe underlying mechanisms of gecko adhesion have been investigated through modeling of the three-level hierarchical microstructures under gecko's toe [1]. At the bottom of hierarchy, we show that the peeling strength of a spatula pad for attachment can be 10 times larger than that for detachment. At the intermediate level of hierarchy, we show that the 10 times difference in the peeling strength of a spatula pad for attachment and detachment leads to a 100 times difference in adhesion energy at the level of seta. At the top of hierarchy, the attachment of a gecko toe is modeled as a pad under displacement controlled pulling, which yields an adhesive strength more than sufficient for gecko's body weight; On the other hand, the detachment is modeled as a pad under peeling, giving rise to a negligible peel-off force. The present study reveals that the hierarchical microstructures play critical roles in providing gecko with robust attachment and easy detachment.

Nucleation Barrier for the Precipitation in Nanosized Al-4wt%Cu Alloy

2005 ◽  
Vol 475-479 ◽  
pp. 3463-3466
Author(s):  
Shan Qing Xu ◽  
Zheng Hong Guo ◽  
T.Y. Hsu
Keyword(s):  
Grain Size ◽  
Homogeneous Nucleation ◽  
Critical Size ◽  
Parent Phase ◽  
The Other ◽  
Nucleation Event ◽  
Initial Concentration ◽  
Cu Alloy ◽  
Nucleation Barrier ◽  
Other Hand

The possibility of Al2Cu( q) precipitation in nanosized Al-4wt%Cu alloy is predicted based on the theory of homogeneous nucleation. The result indicates that the initial concentration of Cu in parent phase has little influence on the nucleation event when the grain size is larger than a critical size. On the other hand, when the grain size is smaller than the critical size, the formation of a stable Al2Cu nucleus will be prohibited completely due to the insufficient initial concentration of Cu.

Persistent Electronic Conduction in 12CaO7Al2O3 Thin Films Produced by Ar Ion Implantation: Selective Kick-Out Effect Leads to Electride Thin Films

2004 ◽  
Vol 811 ◽  
Author(s):  
Masashi Miyakawa ◽  
Katsuro Hayashi ◽  
Yoshitake Toda ◽  
Toshio Kamiya ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
The Other ◽  
New Method ◽  
Electronic Conduction ◽  
High Concentration ◽  
Electronic Conductor ◽  
Other Hand

ABSTRACTA new method to convert 12CaO7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar+ ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm−2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×1021 cm−3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm−1. On the other hand, fluences less than 1×1017 cm−2 kept the films transparent and insulating.

Metallographic, Structural and Mechanical Characterization of a Low Density Fe-Mn-Al-C Steel Microalloyed with Ti/B in As-Cast and Homogenized Conditions

MRS Advances ◽  
2018 ◽  
Vol 3 (64) ◽  
pp. 3971-3978 ◽  
Author(s):  
O.E. Villanueva-Perez ◽  
I. Mejía ◽  
V. García-García ◽  
A. Bedolla-Jacuinde
Keyword(s):  
Grain Size ◽  
Mechanical Characterization ◽  
The Other ◽  
Low Density ◽  
X Ray Diffraction ◽  
X Ray ◽  
Other Hand ◽  
Average Grain Size ◽  
Cast Condition

ABSTRACTLow density (LD) steels have shown particular characteristics in terms of mechanical properties and microstructure, since they have high strength, high ductility and density reduction up to 18%. On the other hand, the addition of microalloying elements such as Ti and B generate hardening by solid solution and precipitation, as well as grain refinement effect. LD steels generate nano-sized kappa phase precipitated from the austenite matrix, and these advanced steels can reach strength and elongation up to 780 MPa and 60%, respectively. The main objective of this research work is the metallographic, structural and mechanical characterization of a LD steel microalloyed with Ti/B in as-cast and -homogenized conditions. For this purpose a Fe-27Mn-7Al-1.2C (%wt) LD steel microalloyed with Ti/B was melted in a vacuum-induction furnace and cast in metallic mold. LD-Ti/B steel samples were homogenized at 1100 °C during 20, 50, 100, 150 and 200 minutes followed by water quenching. Metallographic, structural and mechanical characterization was carried out by optical (LOM) and scanning electron (SEM) microscopy, X-ray diffraction (XRD) and microhardness Vickers testing (HV10), respectively. In general, results showed a typical dendritic microstructure with average grain size of 1256 μm in the as-cast condition. On the other hand, the as-homogenized condition showed an austenitic equiaxial microstructure with average grain size from 164 to 940 μm. Austenite, ferrite and kappa phases were detected by X-ray diffraction (XRD). Also, second-phase particles such as AlN, TiC and MnS were detected by LOM and SEM-EDS analysis. LD steel microalloyed with Ti/B exhibited the highest microhardness Vickers value (235 HV10) in the as-cast condition, whilst in the as-homogenized condition microhardness gradually decreases from 223 to 198 HV10 as holding time increases.

Atomistic Simulations of Dislocation-Interface Interactions in Thin Films

2004 ◽  
Vol 821 ◽  
Author(s):  
R. W. Leger ◽  
Y.-L. Shen
Keyword(s):  
Thin Films ◽  
Parametric Analysis ◽  
The Other ◽  
Atomistic Simulations ◽  
Molecular Statics ◽  
Nano Scale ◽  
Sliding Interface ◽  
Bonded Interface ◽  
Other Hand ◽  
Transitional Behavior

AbstractAtomistic simulations are carried out to study the effect of atomic sliding capability at the interface between a plastically deforming film and a stiff substrate. Molecular statics modeling is utilized to corroborate the overall film response and the nano-scale defect mechanisms. A free-sliding interface is shown to be able to cause “reflection” of oncoming dislocations and enhance film plasticity. A rigidly bonded interface, on the other hand, is seen to resist approaching dislocations. Partial sliding results in a transitional behavior between the two extremes, as revealed in our parametric analysis. The sliding capability of interface atoms is also seen to dictate the overall film response.

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