scholarly journals CO Detection Investigation at High Temperature by SiC MISFET Metal/Oxide Gas Sensors

Proceedings ◽  
2021 ◽  
Vol 56 (1) ◽  
pp. 41
Author(s):  
Lida Khajavizadeh ◽  
Anita Lloyd Spetz ◽  
Mike Andersson

In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film of co-deposited Pt/Al2O3 instead of the commonly used catalytic metal-based contacts were fabricated and characterized for CO detection at elevated temperatures and different CO and O2 levels. It can be concluded that the sensing mechanism at elevated temperatures correlates with oxygen removal from the sensor surface rather than the surface CO coverage as observed at lower temperatures. The long-term stability performance was also shown to be improved compared to that of previously studied devices.

2016 ◽  
Vol 4 (2) ◽  
pp. 295-304 ◽  
Author(s):  
Bing Wang ◽  
Yingde Wang ◽  
Yongpeng Lei ◽  
Song Xie ◽  
Nan Wu ◽  
...  

The SnO2 NS@SiC NF sensor shows an ultrafast response/recovery rate, high sensitivity, excellent reproducibility, good sensing selectivity and outstanding long-term stability toward ethanol, even at high temperature.


Alloy Digest ◽  
2020 ◽  
Vol 69 (8) ◽  

Abstract ATI 6-2-4-2 is a near-alpha, high strength, titanium alloy that exhibits a good combination of tensile strength, creep strength, toughness, and long-term stability at temperatures up to 425 °C (800 °F). Silicon up to 0.1% frequently is added to improve the creep resistance of the alloy. This datasheet provides information on composition, physical properties, hardness, and tensile properties as well as creep. It also includes information on high temperature performance as well as forming, heat treating, machining, and joining. Filing Code: Ti-169. Producer or Source: ATI.


Author(s):  
Chong Wang ◽  
Yiqun Zhang ◽  
Lianjing Zhao ◽  
Chenguang Wang ◽  
Fangmeng Liu ◽  
...  

Catalysts ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 985
Author(s):  
Byungwook Hwang ◽  
Jung Hwan Kim ◽  
Doyeon Lee ◽  
Hyungseok Nam ◽  
Ha Na Kim ◽  
...  

In the integrated gasification combined cycle (IGCC) process, the sulfur compounds present in coal are converted to hydrogen sulfide (H2S) when the coal is gasified. Due to its harmful effects on sorbent/solvent and environmental regulations, H2S needs to be removed from the product gas stream. To simulate the H2S removal process, desulfurization was carried out using a dry sorbent as a fluidizing material within a bubbling, high-temperature fluidized bed reactor. The ZnO-based sorbent showed not only an excellent capacity of H2S removal but also long-term stability. However, unexpected SO2 gas at a concentration of several hundred ppm was detected during the desulfurization reaction. Thus, we determined that there is an unknown source that supplies oxygen to ZnS, and identified the oxygen supplier through three possibilities: oxygen by reactant (fresh sorbent, ZnO), byproduct (ZnSO4), and product (H2O). From the experiment results, we found that the H2O produced from the reaction reacts with ZnS, resulting in SO2 gas being generated during desulfurization. The unknown oxygen source during desulfurization was deduced to be oxygen from H2O produced during desulfurization. That is, the oxygen from produced H2O reacts with ZnS, leading to SO2 generation at high temperature.


2017 ◽  
Vol 7 (5) ◽  
pp. 1197-1202 ◽  
Author(s):  
Tim Niewelt ◽  
Wolfram Kwapil ◽  
Marisa Selinger ◽  
Armin Richter ◽  
Martin C. Schubert

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000305-000309 ◽  
Author(s):  
Vinayak Tilak ◽  
Cheng-Po Chen ◽  
Peter Losee ◽  
Emad Andarawis ◽  
Zachary Stum

Silicon carbide based ICs have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon. Silicon carbide (SiC) based MOSFETs and ICs were fabricated and measured at room temperature and 300°C. A common source amplifier was fabricated and tested at room temperature and high temperature. The gain at room temperature and high temperature was 7.6 and 6.8 respectively. A SiC MOSFET based operational amplifier was also fabricated and tested at room temperature and 300°C. The small signal open loop gain at 1kHz was 60 dB at room temperature and 57 dB at 300°C. Long term stability testing at 300°C of the MOSFET and common source amplifiers showed very little drift.


Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3379 ◽  
Author(s):  
Caterina Travan ◽  
Alexander Bergmann

Graphene is a good candidate for filling the market requirements for cheap, high sensitivity, robust towards contamination, low noise, and low power consumption gas sensors, thanks to its unique properties, i.e., large surface, high mobility, and long-term stability. Inkjet printing is a cheap additive manufacturing method allowing fast, relatively precise and contactless deposition of a wide range of materials; it can be considered therefore the ideal technique for fast deposition of graphene films on thin substrates. In this paper, the sensitivity of graphene-based chemiresistor gas sensors, fabricated through inkjet printing, is investigated using different concentrations of graphene in the inks. Samples have been produced and characterized in terms of response towards humidity, nitrogen dioxide, and ammonia. The presented results highlight the importance of tuning the layer thickness and achieving good film homogeneity in order to maximize the sensitivity of the sensor.


Instruments ◽  
2018 ◽  
Vol 3 (1) ◽  
pp. 2 ◽  
Author(s):  
Christopher Bosyj ◽  
Neelesh Bhadwal ◽  
Thomas Coyle ◽  
Anthony Sinclair

Long-term installation of ultrasonic transducers in high temperature environments allows for continuous monitoring of critical components and processes without the need to halt industrial operations. Transducer designs based on the high-Curie-point piezoelectric material lithium niobate have been shown to both be effective and stable at extreme temperatures for long-term installation. In this study, several brazing techniques are evaluated, all of which aim to provide both mechanical bonding and acoustic coupling directly to a bare lithium niobate piezoelectric element. Two brazing materials—a novel silver-copper braze applied in a reactive air environment and an aluminum-based braze applied in a vacuum environment—are found to be suitable for ultrasound transmission at elevated temperatures. Reliable wide-bandwidth and low-noise ultrasound transmission is achieved between room temperature and 800 °C.


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