The Effects of Deposition Parameters on the Properties of SiO2 Films Deposited by Microwave Ecr Plasmas

1993 ◽  
Vol 334 ◽  
Author(s):  
T. T. Chau ◽  
P. M. Lam ◽  
K. C. Kao
Keyword(s):  
Refractive Index ◽  
Deposition Rate ◽  
Gas Flow ◽  
High Pressures ◽  
Thermally Grown Oxide ◽  
Film Deposition ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Film Deposition Rate ◽  
Thermally Grown

AbstractElectronic and physical properties of SiO2 films deposited by microwave ECR plasmas of the mixtures of SiH4 and N2O have been measured as functions of the pressure and the gas-flow ratio of N2O to SiH4 gases in the processing chamber. Experimental results show that the film deposition rate increases with increasing SiH4 concentration, that is, with decreasing gas-flow ratio. The films deposited at N2O/SiH4 gas-flow ratios smaller than 10 tend to have a refractive index higher than the thermally grown oxide. However, for the N2O/SiH4 gas-flow ratios between 10 and 20, the films have the refractive index close to that of thermally grown oxide, which is about 1.45-1.46. The film deposition rate increases linearly with increasing pressure. In general, the films deposited at high pressures (>100 mTorr) have a higher refractive index as compared with the thermally grown oxide; also films deposited at high pressures have more electron traps. Good quality SiO2 films can be deposited at pressures with the range of 20 -50 mTorr and the N2O/SiH4 gas-flow ratio of 10.

Variation of thin film deposition rate on SS 314 with the variation of gas flow rate using CVD

2011 ◽  
Vol 63 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Mohammad Asaduzzaman Chowdhury ◽  
Dewan Muhammad Nuruzzaman ◽  
Khaled Khalil ◽  
Mohammad Lutfar Rahaman
Keyword(s):  
Thin Film ◽  
Deposition Rate ◽  
Flow Rate ◽  
Gas Flow ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Gas Flow Rate ◽  
Film Deposition Rate

Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study

2008 ◽  
Vol 23 (5) ◽  
pp. 1433-1442 ◽  
Author(s):  
S. Naskar ◽  
S.D. Wolter ◽  
C.A. Bower ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Refractive Index ◽  
Hydrogen Concentration ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Rf Plasma ◽  
Flow Ratio ◽  
Plasma Chemical Vapor Deposition ◽  
Gas Flow Ratio

Thick SiOxNy films were deposited by radiofrequency (rf) plasma chemical vapor deposition using silane (SiH4) and nitrous oxide (N2O) source gases. The influence of deposition conditions of gas flow ratio, rf plasma mixed-frequency ratio (100 kHz, 13.56 MHz), and rf power on the refractive index were examined. It was observed that the refractive index of the SiOxNy films increased with N and Si concentration as measured via x-ray photoelectron spectroscopy. Interestingly, a variation of refractive index with N2O:SiH4 flow ratio for the two drive frequencies was observed, suggesting that oxynitride bonding plays an important role in determining the optical properties. The two drive frequencies also led to differences in hydrogen concentration that were found to be correlated with refractive index. Hydrogen concentration has been linked to significant optical absorption losses above index values of ∼1.6, which we identified as a saturation level in our films.

Synthesis and Characterization of Siof Thin Films Deposited by Ecrcvd for Ulsi Multilevel Interconnections

1996 ◽  
Vol 427 ◽  
Author(s):  
Seoghyeong Lee ◽  
Jong-Wan Park
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Fluorine Content ◽  
Fluorine Concentration ◽  
Flow Ratio ◽  
Ecr Plasma ◽  
Gas Flow Ratio

AbstractLow dielectric constant fluorine doped silicon oxide films were deposited by using ECR plasma CVD with SiF4 and O2 as source gases diluted in Ar gas. Characterization of films was carried out in terms of various gas flow ratios (SiF4/O2 = 0.2 ∼ 1.6). The microwave power and substrate temperature during deposition were fixed at 700W and 300°C, respectively. The chemical bonding structure of the films was evaluated by Fourier transform infrared spectroscopy (FTIR), fluorine concentration by X-ray photoelectron spectroscopy (XPS) and refractive index by ellipsometry. Dielectric constant was determined from C-V measurements at 1MHz. FTIR spectra shows that as the fluorine concentration increases, peak intensities of Si-F bonding and shoulder peak at around 1160cm−1 of Si-O stretching mode increased. Moreover, with increasing the fluorine concentration in the SiOF film, the peak position of Si-O stretching mode shifts to the higher wavenumber side. The Si-F2 bond peak is observed to rise when the SiF4/O2 gas flow ratio is larger than 1.0. Refractive index and film density decreased with increasing the SiF4/O2 gas flow ratio. The SiOF film deposited at SiF4/O2 gas flow ratio of 1.0 exhibited fluorine content of 11.8 at.% and dielectric constant of 3.14.

Fabrication of planar SiON optical waveguide and its characterization

2005 ◽  
Vol 891 ◽  
Author(s):  
Yu-Jeong Cho ◽  
Yeong-Cheol Kim
Keyword(s):  
Refractive Index ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Core Layer ◽  
Silicon Oxynitride ◽  
Flow Ratio ◽  
Cladding Layer ◽  
Gas Flow Ratio ◽  
Index Contrast ◽  
Optical Planar Waveguide

ABSTRACTSilicon oxynitride (SiON) was deposited as a core layer on a silica (SiO2) under-cladding layer by using plasma enhanced chemical vapor deposition (PECVD). The refractive index of the SiON core layer was varied between 1.45 and 1.78 by changing the gas flow ratio of SiH4, N2O and NH3. Etching experiments were performed using a dry etching equipment to fabricate the SiON core. An optical planar waveguide with a core and under-cladding thicknesses of 6 μm and 8 μm, respectively, and a refractive index contrast (Δn) of 7 % has been fabricated.

Fabrication of Tungsten-Tellurite Glass Thin Films using Radio Frequency Magnetron Sputtering Method and Optical Property Characterization

2004 ◽  
Vol 817 ◽  
Author(s):  
Ki-Young Yoo ◽  
Sanghoon Shin ◽  
Youngman Kim ◽  
Jong-Ha Moon ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Gas Flow ◽  
Room Temperature ◽  
Tellurite Glass ◽  
Processing Parameters ◽  
Flow Ratio ◽  
Rf Power ◽  
Gas Flow Ratio

AbstractTungsten-tellurite glass thin films were fabricated by radio-frequency (rf) magnetron sputtering method at various processing parameters such as substrate temperatures, Ar/O2 processing gas flow ratio, processing pressure, and rf power from a 70TeO2-30WO3 target fabricated by solid–state sintering method. The effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films were investigated using atomic force microscopy, X-ray diffractometer, scanning electron microscopy, and UV spectrometer. Amorphous glass thin films with a surface roughness of 4∼6 nm were obtained only at room temperature and crystalline phase were observed in all as-deposited thin films prepared at above the room temperature. The deposition rate strongly depends on the processing parameters. It increases as the rf power increases and the processing pressure decreases. Especially, it changes remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ∼0.2 μm /h, whereas ∼1.5 μm/h when the films was formed in pure O2 atmosphere.

The Effect of Gas Flow Rate on the Thin Film Deposition Rate on Carbon Steel Using Thermal CVD

2011 ◽  
Vol 9 (1) ◽  
Author(s):  
Mohammad A. Chowdhury ◽  
Dewan M. Nuruzzaman ◽  
Mohammad L. Rahaman
Keyword(s):  
Carbon Steel ◽  
Deposition Rate ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Gas Flow Rate ◽  
Film Deposition Rate

Solid thin films have been deposited on carbon steel substrates in a chemical vapor deposition (CVD) reactor where natural gas, mostly methane (CH4), was used as a precursor gas. The effect of gas flow rate on the thin film deposition rate has been investigated experimentally. The effect of gap between activation heater and substrate on the deposition rate has also been observed. To do so, a hot filament thermal chemical vapor deposition unit is used. The flow rate of natural gas varies from 0.5 to 2 l/min at normal temperature and pressure (NTP) and the gap between activation heater and substrate varies from 4 to 6.5 mm. Results show that the deposition rate on carbon steel increases with the increase of gas flow rate. It is also seen that deposition rate increases with the decrease of gap between activation heater and substrate within the observed range. These results are analyzed by dimensional analysis to correlate the deposition rate with gas flow rate, surface roughness and film thickness. In addition, friction coefficient and wear rate of carbon steel sliding against SS 304 under different normal loads are also investigated before and after deposition. The obtained results reveal that in general, the values of friction coefficient and wear rate are lower after deposition than that of before deposition.

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