Comparison of Film Quality and Step Coverage for Silicon Dioxide Dielectrics Formed by RTCVD Using Tetraethoxysilane and Silane

ABSTRACTRapid thermal chemical vapor deposition (RTCVD) oxides formed using TEOS and oxygen (O2) are compared with RTCVD oxides formed using silane (SiH4) and nitrous oxide (N2O). These oxides were deposited under varying pressure and gas composition to investigate the film step coverage and electrical properties. Cross-sectional scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used in determining the oxide step coverage. Excellent oxide conformality, greater than 90 %, was achieved with SiH4 and N2O over a wide range of aspect ratios. The average breakdown field obtained for the SiH4/N2O oxides is approximately 13 MV/cm, which is greater than values measured for oxides formed by conventional dry thermal process. Oxides deposited using TEOS typically have an average breakdown field of about 8 MV/cm. We conclude that the SiH4/N2O oxide process for the deposition of SiO2 films in a RTCVD reactor is a very promising candidate for sidewall spacer formation in advanced device applications.

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Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

MRS Proceedings ◽

10.1557/proc-235-807 ◽

1991 ◽

Vol 235 ◽

Author(s):

Yung-Jen Lin ◽

Ming-Deng Shieh ◽

Chiapying Lee ◽

Tri-Rung Yew

Keyword(s):

Electron Microscopy ◽

Chemical Vapor Deposition ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Ex Situ ◽

Epitaxial Layers ◽

Cross Sectional ◽

Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

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Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

MRS Proceedings ◽

10.1557/proc-236-349 ◽

1991 ◽

Vol 236 ◽

Author(s):

Yung-Jen Lin ◽

Ming-Deng Shieh ◽

Chiapying Lee ◽

Tri-Rung Yew

Keyword(s):

Electron Microscopy ◽

Chemical Vapor Deposition ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Ex Situ ◽

Epitaxial Layers ◽

Cross Sectional ◽

Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

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Structural Property Study for GeSn Thin Films

Materials ◽

10.3390/ma13163645 ◽

2020 ◽

Vol 13 (16) ◽

pp. 3645

Author(s):

Liyao Zhang ◽

Yuxin Song ◽

Nils von den Driesch ◽

Zhenpu Zhang ◽

Dan Buca ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Molecular Beam ◽

Chemical Vapor ◽

Threading Dislocations ◽

X Ray Diffraction ◽

Cross Sectional ◽

X Ray ◽

Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

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Heteroepitaxial Diamond Formed on Silicon Wafer Observed by High Resolution Electron Microscopy

MRS Proceedings ◽

10.1557/proc-357-231 ◽

1994 ◽

Vol 357 ◽

Author(s):

Jie Yang ◽

Zhangda Lin ◽

Li-Xin Wang ◽

Sing Jin ◽

Ze Zhang

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Diamond Films ◽

Chemical Vapor ◽

High Resolution Electron Microscopy ◽

Cross Sectional ◽

Diamond Crystals ◽

Transmission Electron ◽

Resolution Electron ◽

Hot Filament

AbstractDiamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HFCVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterizate the structure and morphology of the synthesised diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographes show that plane diamond crystals have been obtained.

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Tem Study of Interfaces And Defects in Mocvd-Grown Gan on Sic on Simox

MRS Proceedings ◽

10.1557/proc-482-471 ◽

1997 ◽

Vol 482 ◽

Author(s):

W. L. Zhou ◽

P. Pirouz ◽

F. Namavar ◽

P. C. Colter ◽

M. Yoganathan ◽

...

Keyword(s):

Electron Microscopy ◽

Orientation Relationship ◽

Vapor Deposition ◽

Multilayer Structure ◽

Multilayer Film ◽

Chemical Vapor ◽

Cross Sectional ◽

Thin Foils ◽

Transmission Electron ◽

Cubic Gan

AbstractSiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high resolution (HR)TEM using cross-sectional thin foils. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a smaller fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and cubic SiC (3C-SiC) was found to be (0001)GaN//(1I1)sic; [1120]GaN//[110]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN//(001)SiC; [110]GaN//[110]SiC with respect to the 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. In this paper, the defects in both h-GaN and c-GaN are characterized and discussed.

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Heteroepitaxy of diamond on c-BN: Growth mechanisms and defect characterization

Journal of Materials Research ◽

10.1557/jmr.1994.1849 ◽

1994 ◽

Vol 9 (7) ◽

pp. 1849-1865 ◽

Cited By ~ 29

Author(s):

Alberto Argoitia ◽

John C. Angus ◽

Jing S. Ma ◽

Long Wang ◽

Pirouz Pirouz ◽

...

Keyword(s):

Electron Microscopy ◽

Cubic Boron Nitride ◽

Three Dimensional ◽

Diamond Films ◽

Chemical Vapor ◽

Diamond Growth ◽

Defect Characterization ◽

Cross Sectional ◽

Transmission Electron ◽

High Resolution Tem

Diamond films grown on {100}, {111} boron-terminated, and nitrogen-terminated facets of cubic boron nitride (c-BN) single crystals were characterized by Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The evolution of morphology and microstructure of the diamond films at different stages during the growth process were followed by SEM investigation. The results indicate that diamond growth proceeds by nucleation of oriented three-dimensional islands followed by their coalescence. Cross-sectional TEM specimens were prepared from thick (over 10 μm) continuous diamond films grown on {111} boron-terminated surfaces. Selected-area diffraction and high resolution TEM images show that the diamond film has a parallel orientation relationship with respect to the substrate. Characteristic defects, common to diamond films obtained by chemical vapor deposition on other substrates, are also discussed.

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Grain Formation in Polycrystalline Silicon Films Deposition on SiO2 at Very Low Temperatures

MRS Proceedings ◽

10.1557/proc-377-149 ◽

1995 ◽

Vol 377 ◽

Author(s):

Kun-Chih Wang ◽

Ruo-Yu Wang ◽

Tri-Rung Yew ◽

Joseph J. Loferski ◽

Huey-Liang Hwang

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Silicon Films ◽

Cross Sectional ◽

Plan View ◽

Transmission Electron ◽

Grain Formation

ABSTRACTThis paper describes the grain formation in very low temperature polycrystalline silicon (poly-Si) growth on SiO2. The silicon films were deposited by electron cyclotron resonance chemical vapor deposition with hydrogen dilution at 250°C and without any thermal annealing. The largest grain sizes observed in the poly-Si film is about 1 μm. The grains have a leaf-like shape as observed in plan-view transmission electron microscopy. The grain morphologies were determined by cross-sectional transmission electron microscopy and atomic force microscopy. Raman scattering spectrum was used to determine the crystalline fraction. X-ray diffraction patterns were used to study the film crystallinity. A simple model of grain formation is proposed.

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Cross-Sectional Transmission Electron Microscopy of Defects in Beta Silicon Carbide Thin Films

MRS Proceedings ◽

10.1557/proc-46-593 ◽

1985 ◽

Vol 46 ◽

Cited By ~ 6

Author(s):

C.H. Carter ◽

J.A. Edmond ◽

J.W. Palmour ◽

J. Ryu ◽

H.J. Kim ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Silicon Carbide ◽

Vapor Deposition ◽

Defect Structure ◽

Chemical Vapor ◽

Processing Parameters ◽

Cross Sectional ◽

Transmission Electron

AbstractTechniques have been developed at NCSU for fabricating cross-sectional transmission electron microscopy (XTEM) foils from monocrystalline beta silicon carbide thin films grown by chemical vapor deposition. The results of the TEM observations are utilized to discern the efficacy of the various processing parameters in terms of film quality and defect structure as well as oxidation, ion implantation and annealing procedures.

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Nanocomposite TiC/a-C coatings: structure and properties

MRS Proceedings ◽

10.1557/proc-843-t1.6 ◽

2004 ◽

Vol 843 ◽

Cited By ~ 1

Author(s):

Jeff Th. M. De Hosson ◽

Yutao Pei ◽

Damiano Galvan ◽

Albano Cavaleiro

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Resolution ◽

Volume Fraction ◽

Nanocomposite Coatings ◽

Elemental Distribution ◽

Cross Sectional ◽

Transmission Electron ◽

Wide Range ◽

Different Levels

ABSTRACTThis contribution deals with fundamental and applied concepts in nano-structured coatings, in particular focusing on the characterization with high-resolution (transmission) electron microscopy. Both unbalanced and balanced magnetron sputtering systems were used to deposit nc-TiC/a-C nanocomposite coatings with hydrogenated or hydrogen-free amorphous carbon (a-C) matrix, respectively. The contents of Ti and C in the coatings have been varied over a wide range (7∼45 at.% Ti) by changing the flow rate of acetylene gas or the locations of substrates relative to the center of C/TiC targets. Different levels of bias voltage and deposition pressure were used to control the nanostructure. The nanocomposite coatings exhibit hardness of 5∼35 GPa, hardness/E-modulus ratio up to 0.15, wear rate of 4.8×10−17 m3/Nm, coefficient of friction of 0.04 under dry sliding and strong self-lubrication effects. The nanostructure and elemental distribution in the coatings have been characterized with cross-sectional and planar high-resolution transmission electron microscopy (HRTEM) and energy filtered TEM. The influences of the volume fraction and size distribution of nano-crystallites TiC (nc-TiC) on the coating properties were examined.

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Quantitative Studies on the Evolution of the Polysilicon/Silicon Interfacial Oxide Upon Annealing

MRS Proceedings ◽

10.1557/proc-202-107 ◽

1990 ◽

Vol 202 ◽

Cited By ~ 1

Author(s):

Sergio A. Ajuria ◽

Rafael Reif

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electrical Characterization ◽

Cross Sectional ◽

Cross Bridge ◽

Quantitative Studies ◽

Transmission Electron ◽

Wide Range ◽

Microscopy Data

ABSTRACTPolysilicon/silicon interfacial oxides are shown by cross-sectional Transmission Electron Microscopy studies to agglomerate upon annealing. In addition to presenting highlights of microscopy results, we report on electrical characterization data obtained from Cross-Bridge Kelvin Resistors. Resistor data not only support a model for agglomeration proven on microscopy data, but also allow for a quantitative macroscopic understanding of the agglomeration of polysilicon/silicon interfacial oxides over a wide range of times and temperatures.

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