Structural, Electrical, and Optical Properties of Erbium-Doped Epitaxial BaTiO3 Films Grown by RF Sputtering

1995 ◽  
Vol 401 ◽  
Author(s):  
Pedro Barrios ◽  
Cheng Chung Li ◽  
Hong Koo Kim ◽  
Jean Blachere
Keyword(s):  
Remanent Polarization ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
Electrical And Optical Properties ◽  
Buffer Electrode ◽  
Erbium Doped ◽  
Er Doped ◽  
Relationship Of

AbstractWe have investigated the epitaxial growth of Er-doped BaTiO3 films using rf magnetron sputtering. The Er-doped films (0.5 - 1 μm thick) were deposited on MgO (001) single-crystal substrates at various temperatures (500 - 800 °C). The films deposited at 700 °C or above arehighly (001)- oriented with an in-plane epitaxial relationship of BaTiO3[100] ║ MgO[100], as confirmed by X-ray diffraction. The Er doped films were found to be compressively stressed, as-deposited. The amount of stress monotonically decreases as a function of the deposition temperature. The Er-doped epitaxial films show a strong room-temperature photoluminescence at 1.54 μm, which corresponds to intra-transitions of Er3+ ions. Electrical characterizationswere carried out on Er-doped BaTiO3 films that were grown on MgO with a conducting In203 buffer electrode. The measurement shows that the Er-doped BaTiO3 films are ferroelectric with a remanent polarization of 1.5 μC/cm2 and a coercive field of 40 kV/cm.

The process and mechanism of the GaN nanoparticles formed by nitridation of β-Ga2O3 crystal

2017 ◽  
Vol 31 (10) ◽  
pp. 1750108 ◽  
Author(s):  
Xiao-Jun Cui ◽  
Liang-Ling Wang
Keyword(s):  
Vapor Deposition ◽  
Surface Defect ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Diffraction Peaks ◽  
Relationship Of ◽  
Gan Film

The process of conversion from [Formula: see text]-Ga2O3 single crystal to gallium nitride (GaN) in an atmosphere of NH3 by chemical vapor deposition is investigated. The surface morphology and microstructure of the GaN nanoparticles are observed by scanning electron microscope, which indicates that the growth of GaN is via the Volmer–Weber mechanism. The [Formula: see text]-Ga2O3 is firstly evaporated at high temperature to form the porous layer, followed by the surface-defect induced GaN nucleation formation. The crystalline structure and epitaxial relationship of the GaN nanoparticles are investigated by X-ray diffraction (XRD) via [Formula: see text]–[Formula: see text], showing GaN (0002) and (0004) diffraction peaks in the XRD spectra. It is concluded that the polycrystalline GaN film with hexagonal structure has a strong c-axis preferential orientation.

Growth of ZnO Thin Films on Sapphire Substrates by ECR-Assisted MBE

1997 ◽  
Vol 474 ◽  
Author(s):  
Hee-Bog Kang ◽  
Kiyoshi Nakamura ◽  
Kazuo Ishikawa
Keyword(s):  
Sapphire Substrate ◽  
Electron Cyclotron Resonance ◽  
Rf Sputtering ◽  
Zno Films ◽  
Zno Film ◽  
Epitaxial Relationship ◽  
Rocking Curve ◽  
Sapphire Substrates ◽  
Relationship Of ◽  
Ecr Source

ABSTRACTEpitaxial ZnO films were grown on c-plane sapphire substrate at low temperature using the electron cyclotron resonance-assisted molecular beam epitaxy(ECR-assisted MBE) technique. In this method, Zn vapor provided by a Knudsen cell reacts with oxygen activated in an ECR source on the surface of sapphire substrate. The crystal structure, surface morphology and epitaxial relationship of the films were investigated. It was confirmed that the ECR-assisted MBE technique was capable of growing a high quality epitaxial ZnO films on c-plane sapphire substrates at low temperatures in comparison with CVD and RF sputtering. The FWHM of an x-ray rocking curve of the (0002) peak for a 0.33μ-thick ZnO film was as narrow as 0.58°. The epitaxial relationship between ZnO film and c-plane sapphire substrate was determined to be (0001)ZnO//(0001)Al2O3 with in-plane alignment of [1100]ZnO//[2110]Al2O3, which is equivalent to the 30° rotation of ZnO relative to sapphire in the c-plane.

Optical Waveguides Using Epitaxial Bi4Ti3O12 Thin Films on MgO with CeO2 Cladding Layers

1995 ◽  
Vol 401 ◽  
Author(s):  
William Jo ◽  
T. W. Noh ◽  
Y. T. Byun ◽  
S. H. Kim
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Near Field ◽  
Single Mode ◽  
Field Pattern ◽  
X Ray Diffraction ◽  
Ion Milling ◽  
Epitaxial Relationship ◽  
Relationship Of ◽  
Cladding Layers

AbstractCeO2 thin films were grown on MgO(001) single-crystal substrates by pulsed laser deposition. The CeO2 thin films were used as a cladding layer of a Bi4Ti3O12 thin film waveguide. Structural properties of the BTO/CeO2/MgO heterostructures were investigated using x-ray diffraction techniques. An epitaxial relationship of BTO(001)//CeO2(001)// MgO(001) and BTO[100]//CeO2[100]//MgO[001] was confirmed. From the epitaxial heterostructure, a ridge waveguide was fabricated by photolithographic and ion-milling techniques. An single-mode near-field pattern was observed using an end-fire coupling method.

Visible and Infrared Emission from GaN:Er Thin Films Grown by Sputtering

1999 ◽  
Vol 595 ◽  
Author(s):  
Hong Chen ◽  
K. Gurumurugan ◽  
M.E. Kordesch ◽  
W.M. Jadwisienczak ◽  
H.J. Lozykowski
Keyword(s):  
Electron Excitation ◽  
Infrared Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Yellow Band ◽  
X Ray ◽  
Band Emission ◽  
Cathodoluminescence Spectroscopy ◽  
Erbium Doped ◽  
Er Doped

AbstractErbium-doped films were grown on sapphire and silicon substrates by reactive sputtering, with different Er concentrations in the film. GaN films deposited at 800 K were determined to be polycrystalline by x-ray diffraction analysis, and retained their polycrystalline structure after annealing in nitrogen at 1250 K. The Er-doped films showed optical transmission beginning at about 360 nm, and the Er dose and film purity were determined with Rutherford backscattering spectroscopy. Photoluminescence and cathodoluminescence spectroscopy showed sharp emission lines corresponding to Er 3+ intra 4fn shell transitions over the range from 9 – 300 K. At above-bandgap optical and electron excitation, the 4S3/2 and 4F9/2 transition dominate, and are superposed on the “yellow band” emission. The infrared emission line at 1543 nm, corresponding to the Er 4I⅓ to 4I3/2 transition is also observed.

The Influence of the Crystalline Structure on the Electrical Properties of BaTiO3/SrRuO, Heterostructures

1994 ◽  
Vol 361 ◽  
Author(s):  
L.A. Wills ◽  
Jun Amano
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Crystalline Structure ◽  
Remanent Polarization ◽  
Rf Magnetron Sputtering ◽  
Processing Parameters ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities

ABSTRACTEpitaxial BaTiO3/SrRuO3 heterostructures were deposited on MgO and SrTiO3 substrates by 90° off-axis, rf-magnetron sputtering. A template layer growth was required to obtain epitaxy on MgO. The crystalline structure of the films was analyzed with x-ray diffraction. The leakage current and remanent polarization depended on the crystalline structure and processing parameters. The BaTiO3 thin films displayed remanent polarizations of 13 μC/cm2 and leakage current densities of 107 Amps/cm2 at 2 volts. The BaTiO3 thin films grown under optimal conditions displayed very little fatigue up to 5×108 cycles.

Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 777-780
Author(s):  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

In this study, we investigated the structure and ferroelectric properties of the as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12ferroelectric thin films on ITO substrate fabricated by rf magnetron sputtering method. The electrical, ferroelectric and physical characteristics of as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films were developed under different conditions to find the optimal deposited parameters. The crystalline structure of the prepared (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. Additionally, the remnant polarization of the as-deposited ferroelectric thin films was improved by neodymium and vanadium elements doped in this study. The remanent polarization of as-deposited ferroelectric thin films was 11 μC/cm2as the measured frequency of 1kHz. Finally, the polarization of as-deposited ferroelectric thin film capacitor was decreased by 9% after the fatigue test with 109switching cycles.

Microstructural Studies of Ferroelectric Bi2VO5.5 Thin Films With LaNiO3 Electrodes

1994 ◽  
Vol 341 ◽  
Author(s):  
D. Prasad Beesabathina ◽  
L. Salmanca-Riba ◽  
M. S. Hegde ◽  
K. M. Satyalakshmi ◽  
K. V. R. Prasad ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Direction ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Transmission Electron ◽  
Lattice Images ◽  
Relationship Of ◽  
Microstructural Studies

AbstractThin films of Bi2VO5.5 (BVO), a vanadium analog of the n = I member of the Aurivillius family, have been prepared by pulsed laser deposition. The BVO films grow along the [001] direction on LaNiO3(LNO) and YBa2Cu3O7 (YBCO) electrode buffer layers on LaA- IO3(LAO) substrates as obtained from X-ray diffraction studies. The microstructure of the films and of the interfaces within the film and between the film and the substrate were characterized using transmission electron microscopy. The in-plane epitaxial relationship of the rhombohedral LNO on perovskite LAO was [100] LNO // [100] LAO and [001] LNO // [001] LAO. High resolution lattice images showed a sharp interface between LNO and LAO. However, the LNO film is twinned with a preferred orientation along the growth direction. The BVO layer is single crystalline on both LNO/LAO and YBCO/LAO with the caxis parallel to the growth direction except for a thin layer of about 400 Å at the interface which is polycrystalline.

Epitaxy of Erbium Doped LiNbO3 Films Produced by Pulsed Laser Deposition

1994 ◽  
Vol 341 ◽  
Author(s):  
S. Bauer ◽  
L. Beckers ◽  
M. Fleuster ◽  
J. Schubert ◽  
W. Zander ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Erbium Doped ◽  
Film Preparation ◽  
Er Doped ◽  
Secondary Ion

AbstractThe growth of thin films of LiNbO3 and Er:LiNbO3 on LiNbO3 single crystals produced by pulsed laser deposition (PLD) was studied. Samples were characterized by RBS/Channeling Spectrometry, X-ray diffraction measurements, Secondary Ion Mass Spectroscopy (SIMS) and photoluminescence (PL) measurements. Film preparation is performed in a two-step process including deposition and in-situ-annealing. Buried Er doped layers of approx. 800 nm thickness were grown.

Post-Annealing on the Electrical Properties of Ta-Doped In2O3 Transparent Conductive Films

2012 ◽  
Vol 251 ◽  
pp. 387-391 ◽  
Author(s):  
Lei Xu ◽  
Rui Wang ◽  
Qi Xiao
Keyword(s):  
Optical Transmission ◽  
Rf Sputtering ◽  
Annealed Film ◽  
Transparent Conductive Oxide ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Conductive Films ◽  
Post Annealing

Ta-doped In2O3 transparent conductive oxide (TCO) films are deposited on glass substrates by radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The lowest resistivity of 5.1 × 10−4 Ω•cm is obtained from the film annealed at 500°C, which is only half of that from the un-annealed film (9.9 × 10-4 Ω).

Formation and Characterization of Single Crystal Ni2MnGa Thin Films

1999 ◽  
Vol 604 ◽  
Author(s):  
J. W. Dong ◽  
L. C. Chen ◽  
S. Mckernan ◽  
J. Q. Xie ◽  
M. T. Figus ◽  
...  
Keyword(s):  
Single Crystal ◽  
Quantum Interference ◽  
Magnetic Measurements ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Molecular Beam Epitaxial Growth ◽  
Relationship Of

AbstractIn this paper, molecular beam epitaxial growth of Ni2MnGa single crystal layers on GaAs (001) using a NiGa interlayer is reported. X-ray diffraction and transmission electron microscopy confirmed an epitaxial relationship of Ni2MnGa [100]“010] // GaAs [100] [010] and a tetragonal structure of the film (a = b = 5.79 Å, c = 6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers revealed an in-plane magnetization of ∼200 emu/cm3at room temperature and a Curie temperature of ∼350 K. The martensitic phase transformation was observed to occur at ∼250 K

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