Nanoporous Silica for Low k Dielectrics

1996 ◽  
Vol 443 ◽  
Author(s):  
Teresa Ramos ◽  
Kevin Roderick ◽  
Alok Maskara ◽  
Douglas M. Smith
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Pore Size ◽  
Ambient Pressure ◽  
Porous Solids ◽  
Nanoporous Silica ◽  
Low Density ◽  
Trade Offs ◽  
Small Pore

AbstractConsiderable progress has been made in development of thin films of nanoporous silica (also known as aerogels or low density xerogels) for ILD and IMD applications. Advantages of these materials include high thermal stability, small pore size, and similarity to conventional deposition processes, precursors and final material (silica). We have previously reported success in synthesizing low density, low dielectric constant (K<2) thin films using ambient pressure processing. However, processing of those films was complicated due to large number of process steps and difficulties in independently controlling both film thickness and film porosity.Nanoglass has now developed a new process which considerably reduces the number of process steps and allows independent control of both film thickness and porosity. The dielectric constant of the films can be tailored between 1.3 and 2.5. These films have improved mechanical properties due to controlled pore size and narrow pore size distribution and also because of higher density. The trade-offs between density, mechanical strength and dielectric constant for these types of porous solids will be elucidated. The known properties of the film and the process flow for deposition and post-deposition curing and the role of the relative rates of reaction, gelation, aging, and drying will be presented.

Nanoporous Silica For Low K Dielectrics

1998 ◽  
Vol 511 ◽  
Author(s):  
T. Ramos ◽  
K. Rhoderick ◽  
R. Roth ◽  
L. Brungardt ◽  
S. Wallace ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Pore Size ◽  
Integrated Circuit ◽  
Dielectric Material ◽  
Scale Up ◽  
Nanoporous Silica ◽  
Interconnect Delay ◽  
Small Pore ◽  
Deposition Processes ◽  
Technology Nodes

ABSTRACTAs integrated circuit sizes decrease below 0.25 microns, device performance will no longer improve at the same rate as for past generations because of RC interconnect delay which becomes significant as compared to the intrinsic gate delay. Parallel approaches to address this are to use a lower resistance metal (i.e., copper instead of aluminum) and to use a dielectric material with a dielectric constant significantly below that of dense silica (∼4). Recently, considerable progress has been made in development of thin films of nanoporous silica for these applications. Advantages include high thermal stability, small pore size, similarity to conventional spin-on deposition processes and spin-on glass precursors and final material (silica). The dielectric constant of nanoporous silica can be tailored between ∼1 and 3 which allows its’ implementation at multiple technology nodes in integrated circuit manufacture.Recent development efforts have been focused on; 1) simpler and more reproducible deposition processes, 2) a more complete understanding of processing-property relationships for this material, 3) scale-up of manufacturing to yield a range of precursor products with stability for at least six months and very high purity, and 4) working with customers to integrate this material into both aluminum/gapfill and copper/damascene process flows. This paper targets several specific issues related to nanoporous silica use including water adsorption, pore size distribution control, processing at commercially viable throughputs, and obtaining thickness and dielectric uniformity across 200 mm wafers and wafer to wafer.

scholarly journals Thickness-dependent electrocaloric effect in mixed-phase Pb 0.87 Ba 0.1 La 0.02 (Zr 0.6 Sn 0.33 Ti 0.07 )O 3 thin films

2016 ◽  
Vol 374 (2074) ◽  
pp. 20160056 ◽  
Author(s):  
T. M. Correia ◽  
Q. Zhang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Transitions ◽  
Film Thickness ◽  
Tetragonal Phase ◽  
Sol Gel ◽  
Breakdown Field ◽  
Electrocaloric Effect ◽  
Thickness Increase ◽  
Higher Temperature

Full-perovskite Pb 0.87 Ba 0.1 La 0.02 (Zr 0.6 Sn 0.33 Ti 0.07 )O 3 (PBLZST) thin films were fabricated by a sol–gel method. These revealed both rhombohedral and tetragonal phases, as opposed to the full-tetragonal phase previously reported in ceramics. The fractions of tetragonal and rhombohedral phases are found to be strongly dependent on film thickness. The fraction of tetragonal grains increases with increasing film thickness, as the substrate constraint throughout the film decreases with film thickness. The maximum of the dielectric constant ( ε m ) and the corresponding temperature ( T m ) are thickness-dependent and dictated by the fraction of rhombohedral and tetragonal phase, with ε m reaching a minimum at 400 nm and T m shifting to higher temperature with increasing thickness. With the thickness increase, the breakdown field decreases, but field-induced antiferroelectric–ferroelectric ( E AFE−FE ) and ferroelectric–antiferroelectric ( E FE−AFE ) switch fields increase. The electrocaloric effect increases with increasing film thickness. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’.

Preparation of low-density porous silica thin films by ambient pressure drying

2004 ◽  
Author(s):  
Lanfang Yao ◽  
Jun Shen ◽  
Guangming Wu ◽  
Xingyuan Ni ◽  
Jue Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ambient Pressure ◽  
Porous Silica ◽  
Ambient Pressure Drying ◽  
Low Density ◽  
Silica Thin Films

scholarly journals Growth and Correlation of the Physical and Structural Properties of Hexagonal Nanocrystalline Nickel Oxide Thin Films with Film Thickness

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 615 ◽  
Author(s):  
Hammad ◽  
Abdel-wahab ◽  
Vattamkandathil ◽  
Ansari
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Nickel Oxide ◽  
Near Infrared ◽  
Nir Spectroscopy ◽  
Thickness Measurement ◽  
Hexagonal Structure ◽  
Oxide Thin Films ◽  
Nickel Oxide Thin Films

This study investigated nonstoichiometric nickel oxide thin films prepared via the DC-sputtering technique at different film thicknesses. The prepared films were characterized by a surface profiler for thickness measurement, X-ray diffraction (XRD) for film nature, atomic force microscopy (AFM) for film morphology and roughness, UV-visible-near infrared (UV-vis.-NIR) spectroscopy for optical transmittance spectra of the films, and the photoluminescence (PL) spectra of the prepared films were obtained. The measured film thickness increased from 150 to 503 nm as the deposition time increased. XRD detected the trigonal crystal system of NiO0.96. The crystallite sizes were mainly grown through (101) and (110) characteristic planes. NiO0.96 films have a spherical particle shape and their sizes decreases as the film thickness increased. The optical band gap values decrease from 3.817 to 3.663 eV when the film thickness increases. The refractive index was estimated from the Moss relation, while the high-frequency dielectric constant and the static dielectric constant were deduced from the empirical Adachi formula. The photoluminescence behavior of the studied films confirmed the photogeneration of an electron-hole in nickel and oxygen vacancies. Hence, this study confirms the presence of nickel oxide lattice in the hexagonal structure containing the defects originated from the nickel vacancies or the excess of oxygen.

Preparation Of Low-Density Xerogels At Ambient Pressure For Low K Dielectrics

1995 ◽  
Vol 381 ◽  
Author(s):  
D. M. Smith ◽  
J. Anderson ◽  
C. C. Cho ◽  
G. P. Johnston ◽  
S. P. Jeng
Keyword(s):  
Dielectric Constant ◽  
Ambient Pressure ◽  
Supercritical Drying ◽  
Temperature Limit ◽  
Ambient Pressure Drying ◽  
Low Dielectric Constant ◽  
Low Density ◽  
Silica Xerogels ◽  
High Temperature Limit ◽  
Low Dielectric

AbstractLow density silica xerogels have many properties which suggest their use as a low dielectric constant material. Recent process improvements to control capillary pressure and strength by employing aging and pore chemistry modification, such that shrinkage is minimal during ambient pressure drying, have eliminated the need for supercritical drying. Although xerogels offer advantages for intermetal dielectric (IMD) applications because of their low dielectric constant (<2), high temperature limit, and compatibility with existing microelectronics precursors and processes, they suffer from unanswered questions. These include: 1) are all pores smaller than microelectronics features, 2) what are their mechanical properties (for processing and particle generation), and 3) what is their thermal stability. We have produced bulk xerogels under similar conditions to those used for films and studied the effect of density on the pore size distribution and bulk modulus.

Dielectric Properties and Leakage Current Characteristics of Al2O3 Thin Films with Thickness Variation

2001 ◽  
Vol 666 ◽  
Author(s):  
Jae-Hoon Choi ◽  
Ji-Woong Kim ◽  
Tae-Sung Oh
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Film Thickness ◽  
Leakage Current ◽  
Thickness Variation ◽  
Tangent Loss ◽  
Maximum Dielectric Constant ◽  
Current Densities ◽  
Current Characteristics

ABSTRACTDielectric properties and leakage current characteristics of the Al2O3 thin films, deposited by reactive sputtering at room temperature, have been investigated with variations of the O2 content in the sputtering gas and the film thickness. The Al2O3 films of 10-300 nm thickness were amorphous without depending on the O2 contents of 25-75% in the sputtering gas. Maximum dielectric constant was obtained for the Al2O3 film deposited with the sputtering gas of 50% O2 content. With reduction of the film thickness from 300 nm to 10 nm, dielectric constant decreased from 9.04 to 3.71 and tangent loss increased from 0.0035 to 0.0594, respectively. When the O2 content in the sputtering gas was higher than 50%, the Al2O3 films exhibited no shift of the flatband voltage in C-V curves. The leakage current density increased with increasing the film thickness, and the Al2O3 films thinner than 100 nm exhibited the leakage current densities lower than 10−6 A/cm up to 650 kV/cm.

Nanoporous Silica for Low κ Dielectrics

1997 ◽  
Vol 495 ◽  
Author(s):  
Teresa Ramos ◽  
Steve Wallace ◽  
Douglas M. Smith
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuit ◽  
Dielectric Material ◽  
Fundamental Problem ◽  
Scale Up ◽  
Current Status ◽  
Nanoporous Silica ◽  
Interconnect Delay ◽  
Small Pore ◽  
Deposition Processes

ABSTRACTAs integrated circuit sizes decrease below 0.25 microns, device performance will no longer improve at the same rate as for past generations because of RC interconnect delay which becomes significant as compared to the intrinsic gate delay. The parallel approaches to partially address this fundamental problem are to use a lower resistance metal (i.e., copper instead of aluminum) and to use a dielectric material with a dielectric constant significantly below that of dense silica (∼4). Recently, considerable progress has been made in development of thin films of nanoporous silica (also known as aerogels or low density xerogels) for these ILD and IMD applications. Advantages of these materials include high thermal stability, small pore size, and similarity to conventional spin-on deposition processes, spin-on glass precursors and final material (silica). The dielectric constant of nanoporous silica can be tailored between ∼1 and 3 which allows its’ implementation at multiple technology nodes in integrated circuit manufacture starting with the 0.18 micron node.Research and development efforts at Nanoglass over the last several years have focused on; 1) simpler and more reproducible deposition processes, 2) a more complete understanding of processing-property relationships for this material, 3) scale-up of manufacturing to yield a range of precursor products with stability for at least six months and very high purity, and 4) working with customers to integrate this material into both aluminum/gapfill and copper/damascene process flows. Nanoglass has now developed a new process which considerably reduces the number of process steps and allows independent control of both film thickness and porosity. The current status of process and precursor development and device integration efforts for nanoporous silica is discussed.

THICKNESS EFFECTS ON THE EPITAXIAL NATURE OF THE SINGLE-PHASE MULTIFERROIC THIN FILMS

2009 ◽  
Vol 08 (01n02) ◽  
pp. 81-85
Author(s):  
A. HUANG ◽  
S. Y. TAN ◽  
S. R. SHANNIGRAHI
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Sol Gel ◽  
Fold Increase ◽  
Xrd Analysis ◽  
Sol Gel Process

Multiferroic Bi 0.95 La 0.05 Fe 0.7 Sc 0.3 O 3 (BLFS) thin films with different thicknesses have been prepared on (1 0 0) LaAlO 3 (LAO) substrates using a sol–gel process and annealed in N 2 ambient at 650°C for 5 min. From the X-ray diffraction (XRD) analysis, it was observed that BLFS thin films had (h 0 0)-preferred orientation for the film thickness 63, 125, 186, and 240 nm and became isotropic thereafter. The films developed in-plane epitaxial growth with respect to the substrate. The surface morphology became denser and the surface roughness increased as thickness increased up to 241 nm. The highest dielectric constant observed for the 241 nm thick BLFS film too. No prominent of the leakage current density observed for the film thickness up to 241 nm. However, two fold increase in the leakage current density observed for the film thickness 382 nm. For the BLFS films with thickness 241 nm, we observed the highest dielectric constant (ε) value of 1675 and remnant polarization (Pr) polarization value of 52 μC/cm2 using a sol–gel spin coating process.

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