Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

ABSTRACTThe effect of oxygen gettering by buried defect layers at post-implantation annealing of hydrogen implanted Czochralski (Cz) grown silicon has been investigated. Hydrogen ions were implanted with an energy of 180 keV and doses of 2.7.1016cm−2 into p-type Cz and for comparison into p-type float zone (Fz) Si. The samples were annealed at temperatures between 400 °C and 1200 °C in a forming gas ambient and examined by secondary ion mass spectrometry (SIMS) in order to measure the hydrogen and oxygen concentration profiles. Spreading resistance probe (SRP) measurements were used to obtain depth resolved profiles of the resistivity. The observed changes of the resistivity after post-implantation annealing of hydrogen implanted Cz and Fz Si can be explained by hydrogen enhanced thermal donor formation processes (oxygen or hydrogen related) and charges at the SiOx precipitates. The effective oxygen gettering in hydrogen implanted Cz silicon is attributed to hydrogen enhanced diffusion of oxygen to buried defect layers.

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Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon

Materials Science and Engineering B ◽

10.1016/s0921-5107(98)00290-6 ◽

1999 ◽

Vol 58 (1-2) ◽

pp. 91-94 ◽

Cited By ~ 8

Author(s):

A.G. Ulyashin ◽

A.I. Ivanov ◽

I.A. Khorunzhii ◽

R. Job ◽

W.R. Fahrner ◽

...

Keyword(s):

Czochralski Silicon ◽

Thermal Donor ◽

Donor Formation ◽

P Type ◽

Post Implantation

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The Chemistry of Oxygen in Silicon

MRS Proceedings ◽

10.1557/proc-36-205 ◽

1984 ◽

Vol 36 ◽

Cited By ~ 4

Author(s):

J. C. Mikkelsen

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Isotope Substitution ◽

Thermal Donor ◽

Silicon Crystals ◽

Key Issues ◽

Donor Formation ◽

O Isotope ◽

Solubility Of Oxygen ◽

Secondary Ion ◽

Aggregation Phenomena

ABSTRACTSome of the key issues involving the chemistry of oxygen in silicon crystals are presented in this paper. The incorporation of oxygen into Czochralski-grown ingots from melt contact with silica crucibles is described in the context of the Si-SiO2 phase diagram. The techniques for characterizing oxygen in silicon are reviewed, with an emphasis on the use of secondary ion mass spectrometry (SIMS) and 18O isotope substitution. The intrinsic diffusivity and solubility of oxygen in silicon derived from these SIMS measurements are compared to similar results from other techniques as well as related extrinsic behavior of oxygen. Aggregation phenomena involving oxygen, including thermal donor formation and precipitation are discussed. Finally, the recent progress in understanding internal gettering and shear stress are summarized.

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Aluminum and boron diffusion in 4H-SiC

MRS Proceedings ◽

10.1557/proc-742-k6.1 ◽

2002 ◽

Vol 742 ◽

Cited By ~ 5

Author(s):

M. K. Linnarsson ◽

M. S. Janson ◽

A. Schöner ◽

B. G. Svensson

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Strong Dependence ◽

Solubility Limit ◽

Boron Diffusion ◽

Enhanced Diffusion ◽

Al Content ◽

Diffusion Source ◽

P Type ◽

Secondary Ion

ABSTRACTA brief survey is given of some recent result of boron diffusion in low doped n-type (intrinsic) and p-type 4H-SiC. Aluminum diffusion and solubility limit in 4H-SiC are also discussed. Ion implantation of boron has been performed in epitaxial material to form a diffusion source but also epitaxial 4H-SiC structures, with heavily boron or aluminum doped layers prepared by vapor phase epitaxy have been studied. Heat treatments have been made at temperatures ranging from 1100 to 2050°C for 5 minutes up to 64 h. Secondary ion mass spectrometry has been utilized for analysis. For boron diffusion in acceptor doped 4H-SiC, 4×1019 Al atoms/cm3, an activation energy of 5.3 eV has been determined and a strong dependence on Al content for the diffusion coefficient is revealed. Transient enhanced diffusion of ion-implanted boron in intrinsic 4H-SiC samples is discussed. Solubility limits of ∼1×1020 Al/cm3 (1700°C) and <1×1020 B/cm3 (1900°C) have been deduced.

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The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron

MRS Proceedings ◽

10.1557/proc-469-291 ◽

1997 ◽

Vol 469 ◽

Cited By ~ 5

Author(s):

K. Kyllesbech Larsen ◽

P. A. Stoik ◽

V. Privitera ◽

J. G. M. van Berkum ◽

W. B. de Boer ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Secondary Ion Mass Spectrometry ◽

Electrical Activation ◽

Enhanced Diffusion ◽

Boron Doped ◽

Effect Of Oxygen ◽

P Type ◽

And Diffusion ◽

Ion Implanted

ABSTRACTTransient enhanced diffusion (TED) and electrical activation (EA) of ion-implanted boron during rapid thermal annealing has been investigated using three types of boron doped p-type Si (100) substrates: (a) Cz 20 Ωcm, (b) 3 μm thick 20 Ωcm epitaxial Si layer (epi-layer) grown on a 20 Ωcm Cz substrate, and (c) 3 μm thick 20 Ωcm epi-layer grown on a 5 mΩcin Fz substrate. The level of oxygen is known to decrease from material type (a) to (c). The samples were implanted with 20 keV, 5×1013cm−2boron and subjected to rapid thermal annealing (RTA) at various temperatures and times. The EA and TED were studied using spreading resistance profiling (SRP) and secondary ion mass spectrometry (SIMS), respectively. Although the amount of TED is almost identical for the three substrates, the EA is found to be significantly higher in the epi-layers compared to Cz substrates. It is speculated that the trapping of vacancies by oxygen in the ion-damaged region leads to an increase in the interstitial supersaturation during annealing, which then results in enhanced boron clustering and reduced electrical activation in the peak of the implanted profile.

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Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

MRS Proceedings ◽

10.1557/proc-262-701 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 1

Author(s):

J.W. Honeycutt ◽

J. Ravi ◽

G. A. Rozgonyi

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Complete Removal ◽

Dislocation Loops ◽

Enhanced Diffusion ◽

Depth Profiles ◽

Enhanced Dissolution ◽

Implantation Damage ◽

Transmission Electron ◽

Defect Behavior ◽

Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

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Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

MRS Proceedings ◽

10.1557/proc-719-f13.11 ◽

2002 ◽

Vol 719 ◽

Cited By ~ 9

Author(s):

Ian D. Sharp ◽

Hartmut A. Bracht ◽

Hughes H. Silvestri ◽

Samuel P. Nicols ◽

Jeffrey W. Beeman ◽

...

Keyword(s):

Multilayer Structure ◽

Secondary Ion Mass Spectrometry ◽

Diffusion Processes ◽

Quantitative Description ◽

Multilayer Structures ◽

Dopant Diffusion ◽

Enhanced Diffusion ◽

Self Diffusion ◽

Boron Doped ◽

P Type

AbstractIsotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. 30Si was used as a tracer through a multilayer structure of alternating natural Si and enriched 28Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850°C and 1100°C. A specially designed ion-implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

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Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

MRS Proceedings ◽

10.1557/proc-144-457 ◽

1988 ◽

Vol 144 ◽

Cited By ~ 3

Author(s):

J. M. Zavada ◽

R. G. Wilson ◽

S. W. Novak ◽

S. J. Pearton ◽

A. R. Von Neida

Keyword(s):

Mass Spectrometry ◽

Single Crystals ◽

Diffusion Coefficients ◽

Gallium Phosphide ◽

Secondary Ion Mass Spectrometry ◽

Furnace Annealing ◽

Higher Temperature ◽

Redistribution Of Hydrogen ◽

Secondary Ion ◽

Post Implantation

ABSTRACTIn this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

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Measurements of the Diffusion of Iron and Carbon in Single Crystal NiAl using Ion Implantation and Secondary Ion Mass Spectrometry

MRS Proceedings ◽

10.1557/proc-527-227 ◽

1998 ◽

Vol 527 ◽

Author(s):

R. J. Hanrahan ◽

S. P. Withrow ◽

M. Puga-Lambers

Keyword(s):

Mass Spectrometry ◽

Ion Implantation ◽

Single Crystal ◽

Secondary Ion Mass Spectrometry ◽

Tracer Diffusion ◽

Dynamic Strain ◽

Enhanced Diffusion ◽

Ion Mass Spectrometry ◽

Impurity Elements ◽

Secondary Ion

ABSTRACTClassical diffusion measurements in intermetallic compounds are often complicated by low diffusivities or low solubilities of the elements of interest. Using secondary ion mass spectrometry for measurements over a relatively shallow spatial range may be used to solve the problem of low diffusivity. In order to simultaneously obtain measurements on important impurity elements with low solubilities we have used ion implantation to supersaturate a narrow layer near the surface. Single crystal NiAl was implanted with either 12C or both 56Fe and 12C in order to investigate the measurement of substitutional (Fe) versus interstitial (C) tracer diffusion and the cross effect of both substitutional and interstitial diffusion. When C alone was implanted negligible diffusion was observed over the range of times and temperatures investigated. When both Fe and C were implanted together significantly enhanced diffusion of the C was observed, which is apparently associated with the movement of Fe. This supports one theory of dynamic strain aging in Fe alloyed NiAl.

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Determination of the Distribution of Ion Implantation Boron in Silicon

MRS Proceedings ◽

10.1557/proc-650-r9.3/o14.3 ◽

2000 ◽

Vol 650 ◽

Author(s):

Te-Sheng Wang ◽

A.G. Cullis ◽

E.J.H. Collart ◽

A.J. Murrell ◽

M.A. Foad

Keyword(s):

Electron Microscopy ◽

Secondary Ion Mass Spectrometry ◽

Low Energy ◽

Concentration Profiles ◽

Impurity Profile ◽

Transmission Electron ◽

Device Applications ◽

P Type ◽

Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

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