Aluminum and boron diffusion in 4H-SiC

2002 ◽  
Vol 742 ◽  
Author(s):  
M. K. Linnarsson ◽  
M. S. Janson ◽  
A. Schöner ◽  
B. G. Svensson
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Strong Dependence ◽  
Solubility Limit ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Al Content ◽  
Diffusion Source ◽  
P Type ◽  
Secondary Ion

ABSTRACTA brief survey is given of some recent result of boron diffusion in low doped n-type (intrinsic) and p-type 4H-SiC. Aluminum diffusion and solubility limit in 4H-SiC are also discussed. Ion implantation of boron has been performed in epitaxial material to form a diffusion source but also epitaxial 4H-SiC structures, with heavily boron or aluminum doped layers prepared by vapor phase epitaxy have been studied. Heat treatments have been made at temperatures ranging from 1100 to 2050°C for 5 minutes up to 64 h. Secondary ion mass spectrometry has been utilized for analysis. For boron diffusion in acceptor doped 4H-SiC, 4×1019 Al atoms/cm3, an activation energy of 5.3 eV has been determined and a strong dependence on Al content for the diffusion coefficient is revealed. Transient enhanced diffusion of ion-implanted boron in intrinsic 4H-SiC samples is discussed. Solubility limits of ∼1×1020 Al/cm3 (1700°C) and <1×1020 B/cm3 (1900°C) have been deduced.

Transportation of Na and Li in Hydrothermally Grown ZnO

2009 ◽  
Vol 1201 ◽  
Author(s):  
Pekka Tapio Neuvonen ◽  
Lasse Vines ◽  
Klaus Magnus Johansen ◽  
Anders Hallén ◽  
Bengt Gunnar Svensson ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Formation Energy ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Constant ◽  
Zinc Vacancy ◽  
Diffusion Source ◽  
Secondary Ion ◽  
Zinc Site ◽  
Limited Diffusion

AbstractSecondary ion mass spectrometry has been applied to study the transportation of Na and Li in hydrothermally grown ZnO. A dose of 1015 cm-2 of Na+ was implanted into ZnO to act as a diffusion source. A clear trap limited diffusion is observed at temperatures above 550 °C. From these profiles, an activation energy for the transport of Na of ∼1.7 eV has been extracted. The prefactor for the diffusion constant and the solid solubility of Na cannot be deduced independently from the present data but their product estimated to be ∼3 × 1016 cm-1s-1. A dissociation energy of ∼2.4 eV is extracted for the trapped Na. The measured Na and Li profiles show that Li and Na compete for the same traps and interact in a way that Li is depleted from Na-rich regions. This is attributed to a lower formation energy of Na-on-zinc-site than that for Li-on-zinc-site defects and the zinc vacancy is considered as a major trap for migrating Na and Li atoms. Consequently, the diffusivity of Li is difficult to extract accurately from the present data, but in its interstitial configuration Li is indeed highly mobile having a diffusivity in excess of 10-11 cm2s-1 at 500 °C.

scholarly journals Measurements of the Diffusion of Iron and Carbon in Single Crystal NiAl using Ion Implantation and Secondary Ion Mass Spectrometry

1998 ◽  
Vol 527 ◽  
Author(s):  
R. J. Hanrahan ◽  
S. P. Withrow ◽  
M. Puga-Lambers
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Single Crystal ◽  
Secondary Ion Mass Spectrometry ◽  
Tracer Diffusion ◽  
Dynamic Strain ◽  
Enhanced Diffusion ◽  
Ion Mass Spectrometry ◽  
Impurity Elements ◽  
Secondary Ion

ABSTRACTClassical diffusion measurements in intermetallic compounds are often complicated by low diffusivities or low solubilities of the elements of interest. Using secondary ion mass spectrometry for measurements over a relatively shallow spatial range may be used to solve the problem of low diffusivity. In order to simultaneously obtain measurements on important impurity elements with low solubilities we have used ion implantation to supersaturate a narrow layer near the surface. Single crystal NiAl was implanted with either 12C or both 56Fe and 12C in order to investigate the measurement of substitutional (Fe) versus interstitial (C) tracer diffusion and the cross effect of both substitutional and interstitial diffusion. When C alone was implanted negligible diffusion was observed over the range of times and temperatures investigated. When both Fe and C were implanted together significantly enhanced diffusion of the C was observed, which is apparently associated with the movement of Fe. This supports one theory of dynamic strain aging in Fe alloyed NiAl.

Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
A. G. Ulyashin ◽  
Yu. A. Bumay ◽  
W. R. Fahrner ◽  
A. I. Ivanovo ◽  
R. Job ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Ions ◽  
Enhanced Diffusion ◽  
Thermal Donor ◽  
Float Zone ◽  
Donor Formation ◽  
Effect Of Oxygen ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTThe effect of oxygen gettering by buried defect layers at post-implantation annealing of hydrogen implanted Czochralski (Cz) grown silicon has been investigated. Hydrogen ions were implanted with an energy of 180 keV and doses of 2.7.1016cm−2 into p-type Cz and for comparison into p-type float zone (Fz) Si. The samples were annealed at temperatures between 400 °C and 1200 °C in a forming gas ambient and examined by secondary ion mass spectrometry (SIMS) in order to measure the hydrogen and oxygen concentration profiles. Spreading resistance probe (SRP) measurements were used to obtain depth resolved profiles of the resistivity. The observed changes of the resistivity after post-implantation annealing of hydrogen implanted Cz and Fz Si can be explained by hydrogen enhanced thermal donor formation processes (oxygen or hydrogen related) and charges at the SiOx precipitates. The effective oxygen gettering in hydrogen implanted Cz silicon is attributed to hydrogen enhanced diffusion of oxygen to buried defect layers.

Diffusion of Boron in Silicon and Silicon-Germanium in the Presence of Carbon

2005 ◽  
Vol 237-240 ◽  
pp. 998-1003
Author(s):  
Mudith S.A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Peter Ashburn ◽  
Arthur F.W. Willoughby
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficients ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Coated Surfaces ◽  
Secondary Ion ◽  
Strained Sige

Boron diffusion in Si and strained SiGe with and without C was studied. Using gassource molecular beam epitaxy (MBE), B containing epitaxial layers of: (i) Si, (ii) Si containing 0.1% C, (iii) SiGe with 11% Ge and (iv) SiGe with 11% Ge and with a 0.1% C, were grown on substrates. These samples were then rapid thermal annealed (RTA) at 940, 1000 and 1050°C in an O2 ambient. Self-interstitial-, vacancy- and non-injection conditions were achieved by annealing bare, Si3N4- and Si3N4+SiO2-coated surfaces, respectively. Concentration profiles of B, Ge and C were obtained using Secondary-Ion Mass Spectrometry (SIMS). Diffusion coefficients of B in each type of matrix were extracted by computer simulation. We find that B diffusivity is reduced by both Ge and C. The suppression due to C is much larger. In all materials, a substantial enhancement of B diffusion was observed due to self-interstitial injection compared to non-injection conditions. These results indicate that B diffusion in all four types of layers is mediated primarily by interstitialcy type defects.

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

2008 ◽  
Vol 600-603 ◽  
pp. 453-456
Author(s):  
Margareta K. Linnarsson ◽  
J. Isberg ◽  
Adolf Schöner ◽  
Anders Hallén
Keyword(s):  
Mass Spectrometry ◽  
Silicon Carbide ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Synthetic Diamond ◽  
Group Iv ◽  
Boron Diffusion ◽  
Group Iv Semiconductors ◽  
Secondary Ion ◽  
Silicon Silicon

The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.

Enhanced Diffusion and Formation of Defects During Thermal Oxidation

1980 ◽  
Vol 2 ◽  
Author(s):  
J. Narayan ◽  
J. Fletcher ◽  
B. R. Appleton ◽  
W. H. Christie
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering ◽  
Enhanced Diffusion ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

ABSTRACTEnhanced diffusion of dopants and the formation of defects during thermal oxidation of silicon has been investigated using electron microscopy, Rutherford backscattering, and secondary ion mass spectrometry techniques. Enhanced diffusion of boron was clearly demonstrated in laser annealed specimens in which secondary defects were not present. In the presence of secondary defects, such as precipitates, enhanced diffusion of boron was not observed. The absence of enhanced diffusion during thermal oxidation was also observed for arsenic in silicon. The mechanisms associated with thermal–oxidation enhanced diffusion are discussed briefly.

Mechanism of Enhanced Diffusion of Aluminum in 6H-SiC in the Process of High-Temperature Ion Implantation

1997 ◽  
Vol 504 ◽  
Author(s):  
Igor O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
High Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Enhanced Diffusion ◽  
Sic Wafer ◽  
Secondary Ion

ABSTRACTThe diffusion of Al in 6H-SiC during high-temperature ion implantation was studied using secondary ion mass spectrometry. A 6H-SiC wafer was implanted with 50 keV Al ions to a dose of 1.4E16 cm−2 in the high temperature range 1300°–1800TC and at room temperature. There are two diffusion regions that can be identified in the Al profiles. At high Al concentrations the gettering related peak and profile broadening are observed. At low Al concentrations, the profiles have a sharp kink and deep penetrating diffusion tails. In the first region, the diffusion coefficient is temperature independent, while in the second it exponentially increases as a function of temperature. The Al redistribution can be explained with the substitutional-interstitial diffusion mechanism.

Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

2004 ◽  
Vol 810 ◽  
Author(s):  
Lilya Ihaddadene-Lecoq ◽  
Jerome Marcon ◽  
Kaouther Ketata
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Boron Difluoride ◽  
Secondary Ion ◽  
Trap Interstitial

ABSTRACTWe have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

Manganese in 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 701-704
Author(s):  
Margareta K. Linnarsson ◽  
Aurégane Audren ◽  
Anders Hallén
Keyword(s):  
Mass Spectrometry ◽  
Heat Treatment ◽  
Ion Implantation ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
P Type ◽  
Secondary Ion

Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.

Boron Diffusion in Bulk Cobalt Disilicide

1990 ◽  
Vol 187 ◽  
Author(s):  
P. Gas ◽  
C. Zaring ◽  
B.G. Svensson ◽  
M. Östling ◽  
H.J. Whitlow ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Activation Energy ◽  
Surface Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Lattice Diffusion ◽  
Boron Diffusion ◽  
Cobalt Disilicide ◽  
Boron Distribution ◽  
Secondary Ion

AbstractThe lattice diffusion of boron in bulk cobalt disilicide has been studied at temperatures between 450 and 950°C. Two different diffusion sources, a deposited surface layer of boron and an implanted boron distribution, were used. The lattice diffusion coefficient has been deduced from the boron profiles measured by secondary ion mass spectrometry (SIMS); in the studied temperature range the coefficient varies between 6.2×10−17 and 3.0× 10−11 cm2/s with an activation energy of 2.0 eV. These values reveal a very rapid lattice diffusion and agree with results reported previously in the literature concerning redistribution of boron implanted in thin films of CoSi2, and it also emphasizes the important role played by interfaces during the boron redistribution.

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