Deposition and Characterization of Eu:Y2O3 Red Phosphor Thin Films

1997 ◽  
Vol 471 ◽  
Author(s):  
S. L. Jones ◽  
D. Kumar ◽  
Rajiv K. Singh ◽  
P. H. Holloway
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Treatment ◽  
Powder Materials ◽  
Flat Panel ◽  
Red Phosphor ◽  
Post Annealing ◽  
Field Emission Displays ◽  
Effect Of Surface

ABSTRACTThin film phosphors are very promising for the fabrication of flat panel field emission displays (FEDs). In the present paper we have reported the growth and characterization of Eu:Y2O3 phosphor thin films. The effect of surface roughness and crystallinity on the brightness of phosphor films have been studied. A post annealing treatment of the films have been found to result in the realization of Eu:Y2O3 films with 70% brightness compared to powder materials.

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

scholarly journals Determining Contact Angle and Surface Energy of Co60Fe20B20Thin Films by Magnetron Sputtering

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
S. K. Wang ◽  
Yuan-Tsung Chen ◽  
S. R. Jian
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Contact Angle ◽  
Surface Energy ◽  
Room Temperature ◽  
Annealing Treatment ◽  
Test Liquid ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing

This study examined the deposition of CoFeB thin films on a glass substrate at room temperature (RT), as well as the effects of conducting postannealing at heat annealingTA=150°C for 1 h. The thickness (tf) of the CoFeB thin films ranged from 100 Å to 500 Å. The microstructure, average contact angle, and surface energy properties were also investigated. X-ray diffraction (XRD) revealed that CoFeB films are nanocrystalline at RT and that post-annealing treatment increases in conjunction with the crystallinity. The surface energy of the CoFeB thin films is related to adhesive strength. The CoFeB films form a contact angle of larger than90∘with water as a test liquid. This finding demonstrates that the CoFeB film is hydrophobic. Astfincreases from 100 Å to 500 Å, the surface energy at RT decreases from 40 mJ/mm2to 32 mJ/mm2. During post-annealing treatment, the surface energy increases from 32 mJ/mm2to 35 mJ/mm2, astfincreases from 100 Å to 300 Å; then it decreases to 31 mJ/mm2, astfincreases from 300 Å to 500 Å. The surface energy of the as-deposited CoFeB thin films exceeds that during post-annealing treatment at thicknesses of 100 Å and 200 Å, suggesting that as-deposited CoFeB thin film increases the adhesion.

scholarly journals Effect of Low-Frequency Alternative-Current Magnetic Susceptibility inNi80Fe20Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Yuan-Tsung Chen ◽  
S. H. Lin ◽  
Y. C. Lin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Susceptibility ◽  
Resonance Frequency ◽  
Low Frequency ◽  
Annealing Treatment ◽  
Face Centered Cubic ◽  
Low Frequencies ◽  
Post Annealing ◽  
Alternative Current

X-ray diffraction (XRD) results indicate that the NiFe thin films had a face-centered cubic (FCC) structure. Post-annealing treatment increased the crystallinity of NiFe films over those at room temperature (RT), suggesting that NiFe crystallization yields FCC (111) texturing. Post-annealing treatments increase crystallinity over that obtained at RT. This paper focuses on the maximum alternative-current magnetic susceptibility(χac)value of NiFe thin films with resonance frequency(fres)at low frequencies from 10 Hz to 25000 Hz. These results demonstrate that theχacof NiFe thin films increased with post-annealing treatment and increasing thickness. The NiFe (111) texture suggests that the relationship between magneto-crystalline anisotropy and the maximumχacvalue with optimal resonance frequency(fres)increased spin sensitivity at optimalfres. The results obtained under the three conditions revealed that the maximumχacvalue and optimalfresof a 1000 Å-thick NiFe thin film are 3.45 Hz and 500 Hz, respectively, following postannealing atTA=250°C for 1 h. This suggests that a 1000 Å NiFe thin film post-annealed atTA=250°C is suitable for gauge sensor and transformer applications at low frequencies.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Development of High-Efficiency Zn2SiO4:Mn Thin Films for Flat Panel Cathodoluminescent Displays

1997 ◽  
Vol 471 ◽  
Author(s):  
J. Liu ◽  
D. C. Morton ◽  
M. R. Miller ◽  
Y. Li ◽  
E. W. Forsythe ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Response Time ◽  
Decay Time ◽  
High Efficiency ◽  
Fast Response ◽  
Flat Panel ◽  
Powder Phosphor ◽  
Fast Response Time

ABSTRACTZn2SiO4:Mn thin films were deposited and studied as thin film phosphors for flat panel cathodoluminescent displays. Crystallized films with improved electrical conductivity were obtained after conventional and rapid thermal annealings in a N2 environment at 850Xy11100 °C for 0.25 to 60 minutes. A maximum cathodoluminescent efficiency of 1.3 Lm/W was achieved under dc excitation at 1500 volts. The luminescent emission from these thin films was peaked around 525 nm. The decay time of these films was controlled in the range of 2 to 10 ms by varying the deposition and annealing parameters. The fast response time of these thin films overcomes the long decay limitation of the Zn2SiO4:Mn powder phosphor in practical display applications.

scholarly journals Microfluidic electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

2019 ◽  
Vol 26 (5) ◽  
pp. 1600-1611 ◽  
Author(s):  
Gihan Kwon ◽  
Yeong-Ho Cho ◽  
Ki-Bum Kim ◽  
Jonathan D. Emery ◽  
In Soo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Cell ◽  
Porous Electrode ◽  
High Energy ◽  
Porous Electrodes ◽  
X Ray ◽  
Pdf Analysis ◽  
Thin Film Catalysts

Porous, high-surface-area electrode architectures are described that allow structural characterization of interfacial amorphous thin films with high spatial resolution under device-relevant functional electrochemical conditions using high-energy X-ray (>50 keV) scattering and pair distribution function (PDF) analysis. Porous electrodes were fabricated from glass-capillary array membranes coated with conformal transparent conductive oxide layers, consisting of either a 40 nm–50 nm crystalline indium tin oxide or a 100 nm–150 nm-thick amorphous indium zinc oxide deposited by atomic layer deposition. These porous electrodes solve the problem of insufficient interaction volumes for catalyst thin films in two-dimensional working electrode designs and provide sufficiently low scattering backgrounds to enable high-resolution signal collection from interfacial thin-film catalysts. For example, PDF measurements were readily obtained with 0.2 Å spatial resolution for amorphous cobalt oxide films with thicknesses down to 60 nm when deposited on a porous electrode with 40 µm-diameter pores. This level of resolution resolves the cobaltate domain size and structure, the presence of defect sites assigned to the domain edges, and the changes in fine structure upon redox state change that are relevant to quantitative structure–function modeling. The results suggest the opportunity to leverage the porous, electrode architectures for PDF analysis of nanometre-scale surface-supported molecular catalysts. In addition, a compact 3D-printed electrochemical cell in a three-electrode configuration is described which is designed to allow for simultaneous X-ray transmission and electrolyte flow through the porous working electrode.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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