scholarly journals Interface Effects on the Adhesion of Thin Aluminum Films

1997 ◽  
Vol 472 ◽  
Author(s):  
J.A. Schneider ◽  
S. Guthrie ◽  
N.R. Moody
Keyword(s):  
Thin Films ◽  
Fracture Toughness ◽  
Vapor Deposition ◽  
Scratch Testing ◽  
Aluminum Films ◽  
Sapphire Substrates ◽  
Thin Aluminum ◽  
Scratch Tests ◽  
Interface Effects

ABSTRACTDifferences in the adhesion and fracture toughness of aluminum films on sapphire due to the presence of controlled contaminants are being investigated. Adhesion is evaluated by use of nanoindentation and continuous scratch tests. A comparison was made of the properties of textured thin films of aluminum (178 to 1890 nm) that were vapor deposited onto (0001) oriented sapphire substrates. A very thin (1 nm) layer of carbon was deposited at the interface of selected samples prior to the vapor deposition of the aluminum. Spalling was observed during continuous scratch testing in specimens with carbon at the interface but not in specimens without carbon at the interface.

Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6236-6242 ◽  
Author(s):  
Y. Arata ◽  
H. Nishinaka ◽  
D. Tahara ◽  
M. Yoshimoto
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Single Phase ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Sapphire Substrates

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates.

CHARACTERIZATION OF CHAOTICITY IN THE TRANSIENT CURRENT THROUGH PMMA THIN FILMS

Fractals ◽  
2006 ◽  
Vol 14 (02) ◽  
pp. 125-131 ◽  
Author(s):  
A. HACINLIYAN ◽  
Y. SKARLATOS ◽  
H. A. YILDIRIM ◽  
G. SAHIN
Keyword(s):  
Thin Films ◽  
Time Series ◽  
Lyapunov Exponent ◽  
Power Law ◽  
Chaotic Behavior ◽  
Transient Current ◽  
Positive Lyapunov Exponent ◽  
Aluminum Films ◽  
Thin Aluminum

Chaotic behavior in the transient current through thin Aluminum-PMMA-Aluminum films has been analyzed for times ranging up to 30,000s, in the temperature range 293–363K for applied voltages in the range 10–80V. Time series analysis reveals a positive Lyapunov exponent consistently and reproducibly throughout this range. Power law relaxation as reflected by the autocorrelation function and the positive Lyapunov exponent show parallel behaviors as a function of applied electric field.

THERMAL STRESS BEHAVIOR IN NANO-SIZE THIN ALUMINUM FILMS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4691-4696 ◽  
Author(s):  
TAKAO HANABUSA ◽  
KAZUYA KUSAKA ◽  
SHOSO SHINGUBARA ◽  
OSAMI SAKATA
Keyword(s):  
Thin Films ◽  
Thermal Stress ◽  
Synchrotron Radiation ◽  
Thermal Stresses ◽  
In Situ Observation ◽  
Aluminum Films ◽  
Stress Behavior ◽  
Thin Aluminum ◽  
20 Nm ◽  
Nano Size

In-situ observation of thermal stresses in thin films deposited on a silicon substrate was made by synchrotron radiation. Specimens prepared in this experiment were nano-size thin aluminum films with SiO 2 passivation. The thickness of the films was 10 nm, 20 nm and 50 nm. Synchrotron radiation revealed the diffraction intensities for these thin films and make possible to measure stresses in nano-size thin films. Residual stresses in the as-deposited state were tensile. Compressive stresses were developed in a heating cycle up to 300°C and tensile stresses were developed in a cooling cycle. The thermal stresses in the 50 nm film showed linear behavior in the first heating stage from room temperature to 250°C followed by no change in the stress at 300°C, however, linearly behaved in the second cycle. On the other hand, the thermal stresses in 20 nm and 10 nm films almost linearly behaved without any hysteresis in increasing and decreasing temperature cycles. The mechanism of thermal stress behavior in thin films can be explained by strengthening of the nano-size thin films due to inhibition of dislocation source and dislocation motion.

scholarly journals Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Surfaces ◽  
2018 ◽  
Vol 1 (1) ◽  
pp. 59-72 ◽  
Author(s):  
Zhenghao Gan ◽  
Changzheng Wang ◽  
Zhong Chen
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Nitride ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Flow Rates ◽  
Silicon Nitride Films

Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication and microelectromechanical systems (MEMS). Their mechanical properties are important for MEMS structures; however, these properties are rarely reported, particularly the fracture toughness of these films. In this study, silicon nitride and silicon oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) under different silane flow rates. The silicon nitride films consisted of mixed amorphous and crystalline Si3N4 phases under the range of silane flow rates investigated in the current study, while the crystallinity increased with silane flow rate in the silicon oxynitride films. The Young’s modulus and hardness of silicon nitride films decreased with increasing silane flow rate. However, for silicon oxynitride films, Young’s modulus decreased slightly with increasing silane flow rate, and the hardness increased considerably due to the formation of a crystalline silicon nitride phase at the high flow rate. Overall, the hardness, Young modulus, and fracture toughness of the silicon nitride films were greater than the ones of silicon oxynitride films, and the main reason lies with the phase composition: the SiNx films were composed of a crystalline Si3N4 phase, while the SiOxNy films were dominated by amorphous Si–O phases. Based on the overall mechanical properties, PECVD silicon nitride films are preferred for structural applications in MEMS devices.

Micro-Mechanical Characterization of Tantalum Nitride Thin Films on Sapphire Substrates

1994 ◽  
Vol 343 ◽  
Author(s):  
Shankar K. Venkataraman ◽  
John C. Nelson ◽  
Neville R. Moody ◽  
David L. Kohlstedt ◽  
William W. Gerberich
Keyword(s):  
Thin Films ◽  
Fracture Toughness ◽  
Film Thickness ◽  
Film Surface ◽  
Interfacial Fracture ◽  
Tantalum Nitride ◽  
Interfacial Fracture Toughness ◽  
Sapphire Substrates ◽  
Thin Film Resistors ◽  
Sputter Deposited

ABSTRACTThe adhesion of Ta2N thin films – often used as thin film resistors – to sapphire substrates has been studied by continuous microindentation and microscratch techniques. Ta2N films, 0.1-0.63μm in thickness, were sputter deposited onto single crystal substrates. Continuous microscratch experiments were performed by driving a conical diamond indenter simultaneously into and across the film surface until stresses high enough to delaminate the film were developed. Continuous microindentation experiments were performed to induce film spallation by normal indentation. From both of these experiments, interfacial fracture toughness was determined as a function of film thickness. The interfacial fracture toughness obtained from continuous microscratch experiments is 0.53±0.17 MPa√m, independent of film thickness. This observation indicates that there is almost no plastic deformation in the film prior to fracture so that a ‘true’ interfacial fracture toughness is measured. For the 0.63 µm thick film, continuous microindentation data yielded a fracture toughness of 0.61 ±0.08 MPa√m, which matches closely the value obtained from the microscratch test. Hence, the continuous microscratch and microindentation techniques are viable methods for determining the interfacial fracture toughness in such bi-material systems.

scholarly journals Texture Control in Thin Films Using Ion Bombardment

2000 ◽  
Vol 34 (2-3) ◽  
pp. 105-118
Author(s):  
G. S. Was ◽  
H. Ji ◽  
Z. Ma
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Ion Bombardment ◽  
Preferential Growth ◽  
Aluminum Films ◽  
Ion Channeling ◽  
Preferential Sputtering ◽  
Thin Aluminum ◽  
Out Of Plane ◽  
The Difference

The development of texture in thin films under ion bombardment is believed to occur due to the preferential growth of the aligned grains in the film relative to the unaligned grains. The difference in growth rates between aligned and unaligned grains results in the development of texture with increasing thickness. Both out-of-plane (fiber) and in-plane texture can be controlled during ion bombardment. Experiments were performed to create a (110) out-of-plane texture in thin aluminum films and to create a (110) in-plane texture in niobium films. Results showed that the texture in both cases increases in strength with depth, and that for 500 nm Al films, the (110) texture was stronger than the thermodynamically-preferred (111) texture obtained by physical vapor deposition. Results confirm a texturing mechanism based on ion channeling and preferential sputtering.

Enhanced photoluminescent emission of thin phosphor films via pulsed excimer laser melting

1998 ◽  
Vol 13 (11) ◽  
pp. 3019-3021 ◽  
Author(s):  
J. McKittrick ◽  
G. A. Hirata ◽  
C. F. Bacalski ◽  
R. Sze ◽  
J. Mourant ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Emission Intensity ◽  
Chemical Vapor ◽  
Spherical Particles ◽  
Laser Melting ◽  
Sapphire Substrates ◽  
Krf Laser

Thin films of (Y0.92Eu0.08)2O3 were synthesized through chemical vapor deposition of β-diketonate precursors onto glass and sapphire substrates. The films were weakly luminescent in the as-deposited condition and were composed of spherical particles 3 μm in diameter. A KrF laser was pulsed for 25 ns from 1–3 times on the surface of the films. One pulse was sufficient to melt the film and repeated pulses caused ablation of the material. Melting of the film smoothed the surface, increased the density, and increased the photoluminescent emission intensity.

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