Anodic Bonding of Silicon-Pyrex and Silicon-Soda Lime Glass at Room Temperature

2014 ◽  
Vol 1082 ◽  
pp. 420-423
Author(s):  
Muhammad Hafiz Ab Aziz ◽  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Hussin Kamarudin ◽  
Wan Mokhdzani Wan Norhaimi ◽  
...  
Keyword(s):  
Bond Strength ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Bonding Temperature ◽  
Soda Lime ◽  
Anodic Bonding ◽  
Soda Lime Glass ◽  
Cleaning Process ◽  
Mems Devices ◽  
Before And After

Silicon wafer bonding opens possibilities in creating MEMS devices and anodic bonding is found to be the most relevant wafer bonding technique process in constructing and packaging MEMS. This paper reports on the bond strength comparison between silicon and different glass based materials via anodic bonding. Two types of glass based surface used pyrex and soda lime glass. Bonding temperature is set at room temperature while a high direct current voltage of 15kV. Experiments were carried out using an in-house designed anodic bonder and the bond strength were measured using a bond strength tester. The anodic approach process was done in two sets which are before and after the cleaning process for each sample. Results show that all samples showed higher bond strength after the cleaning process. Silicon-soda lime glass have higher bonding strength of 1950 Pa compared to silicon-pyrex bonding which only gives 1850 Pa of bond strength.

Bond Strength Comparison between Silicon and Glass Based Surface Using Anodic Bonding

2014 ◽  
Vol 680 ◽  
pp. 89-92
Author(s):  
Muhammad Hafiz Ab Aziz ◽  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Wan Mokhdzani Wan Norhaimi ◽  
Aaron Koay Terr Yeow ◽  
...  
Keyword(s):  
Bond Strength ◽  
Soda Lime ◽  
Anodic Bonding ◽  
Soda Lime Glass ◽  
Cleaning Process ◽  
Before And After ◽  
Almost All

This paper reports on the bond strength comparison between silicon and different glass based materials via anodic bonding approach. The three types of glass based surface used were silica, pyrex, and soda lime glass. Silicon will be placed on the positive terminal and glass based materials will be placed on the negative terminal. Experiments were carried out using an in-house designed anodic bonder and the bond strength were measured using a bond strength tester. The anodic bonding approach process was done in two sets which are before and after the cleaning process for each sample. For every set, there are three different bonding partners, which are silicon with silica, silicon with Pyrex, and silicon with soda lime glass. From the results, it can be seen that almost all samples showed higher bond strength after the cleaning process. Silicon with soda lime glass bonding shows the highest bond strength compared with other materials.

Silicon Doped Boron and Glass Based Surface Bonding Strength Analysis via Anodic Bonding Approach

2014 ◽  
Vol 1082 ◽  
pp. 437-440
Author(s):  
Muhammad Hafiz Ab Aziz ◽  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Hussin Kamarudin ◽  
Wan Mokhdzani Wan Norhaimi ◽  
...  
Keyword(s):  
Bond Strength ◽  
Critical Factor ◽  
Soda Lime ◽  
Anodic Bonding ◽  
Anodic Process ◽  
Strength Analysis ◽  
Soda Lime Glass ◽  
Cleaning Process ◽  
Before And After ◽  
Silicon Doped

In this paper, the bondability of silicon bonded to different glass based material was studied by analyzing the bond strength comparison using the anodic bonding approach. The three types of glass based surface used were silica, pyrex, and soda lime glass. Experiments were carried out using an in-house designed anodic bonder and the bond strength were measured using a bond strength tester. Silicon will be placed on the positive terminal while the glass based materials will be placed on the negative terminal. The anodic process was done in two sets which are before and after the cleaning process for each sample. For every set, there are three different bonding partners, which are silicon with silica, silicon with Pyrex, and silicon with soda lime glass. From the results, it can be seen that majority of the samples showed higher bond strength after the cleaning process. Silicon bonded to soda lime glass showed the highest bond strength compared with other materials. This was followed by silicon to pyrex bonding and finally silicon to silica bonding. The maximum bond strength for all samples achieved in the range of 25 until 35 minutes of bonding time. After that, all samples show a critical decrease of bond strength except for the bonding process between silicon doped boron and silica. Cleaning process was proven a critical factor to achieve better bondability as shown in the higher bond strength obtained.

Comparison of Bond Strength of Silicon-Silica and Silicon-Pyrex in Wafer Bonding

2014 ◽  
Vol 1082 ◽  
pp. 416-419
Author(s):  
Muhammad Hafiz Ab Aziz ◽  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Hussin Kamarudin ◽  
Wan Mokhdzani Wan Norhaimi ◽  
...  
Keyword(s):  
Bond Strength ◽  
Wafer Bonding ◽  
Anodic Bonding ◽  
Cleaning Process ◽  
Sodium Ions ◽  
Before And After ◽  
Almost All

This paper reports on the bond strength comparison between silicon and different glass based materials via anodic bonding approach. The two types of glass based surface used were silica and pyrex. Silicon will be placed on the positive terminal and glass based materials will be placed on the negative terminal. Experiments were carried out using an in-house designed anodic bonder and the bond strength were measured using a bond strength tester. The anodic approach process was done in two sets which are before and after the cleaning process for each sample. For every set, there are three different bonding partners, which are silicon with silica, and silicon with Pyrex. From the results, it can be seen that almost all samples showed higher bond strength after the cleaning process. Silicon pyrex with bonding shows the highest bond strength compared to that with silicon-silica due to the presence of sodium ions. The effects of cleaning process with RCA towards the bond strength was also investigated.

Evaluation and Characterization of Titanium to Glass Anodic Bonding

2008 ◽  
Author(s):  
Qiong Shu ◽  
Juan Su ◽  
Gang Zhao ◽  
Ying Wang ◽  
Jing Chen
Keyword(s):  
Bonding Temperature ◽  
Soda Lime ◽  
Anodic Bonding ◽  
Soda Lime Glass ◽  
Glass Wafer ◽  
Wafer Level ◽  
Different Types ◽  
Potential Applications ◽  
First Time

In this paper, Ti-Glass anodic bonding is investigated on both chip and wafer level. In concern of coefficients of thermal expansion (CTE) match, three different types of ion-containing glasses are evaluated: Pyrex 7740, D-263T and soda lime glass. By applying a potential between the two chips and heating them beyond 350°C, soda lime glass samples are successfully bonded with titanium. The influence of the bonding temperature on the bonding strength is revealed. For the first time, wafer level Ti-Glass bond is carried out, a 157-μm-thick titanium wafer is successfully bonded to a 1000-μm-thick soda glass wafer at 450°C and applying a voltage of 800V and a force of 1000N for 30min, over 60% of the surface are joined. The results are helpful to define potential applications in certain field of microsystems.

Wafer Bonding Processes for the Manufacture of Microsystems

2008 ◽  
Author(s):  
Tony Rogers ◽  
Nick Aitken
Keyword(s):  
Bond Strength ◽  
Wafer Bonding ◽  
High Efficiency ◽  
Glass Frit ◽  
Acoustic Microscopy ◽  
Anodic Bonding ◽  
High Yield ◽  
Mems Devices ◽  
Wafer Level ◽  
Wafer Level Packaging

Wafer bonding is a widely used step in the manufacture of Microsystems, and serves several purposes: • Structural component of the MEMS device. • First level packaging. • Encapsulation of vacuum or controlled gas. In addition the technology is becoming more widely used in IC fabrication for wafer level packaging (WLP) and 3D integration. It is also widely used for the fabrication of micro fluidic structures and in the manufacture of high efficiency LED’s. Depending on the application, temperature constraints, material compatibility etc. different wafer bonding processes are available, each with their own benefits and drawbacks. This paper describes various wafer bonding processes that are applicable, not only to silicon, but other materials such as glass and quartz that are commonly used in MEMS devices. The process of selecting the most appropriate bonding process for the particular application is presented along with examples of anodic, glass frit, eutectic, direct, adhesive and thermo-compression bonding. The examples include appropriate metrology for bond strength and quality. The paper also addresses the benefits of being able to treat the wafer surfaces in-situ prior to bonding in order to improve yield and bond strength, and also discusses equipment requirements for achieving high yield wafer bonding, along with high precision alignment accuracy, good force and temperature uniformity, high wafer throughput, etc. Some common problems that can affect yield are identified and discussed. These include local temperature variations, that can occur with anodic bonding, and how to eliminate them; how to cope with materials of different thermal expansion coefficient; how best to deal with out-gassing and achieve vacuum encapsulation; and procedures for multi-stacking wafers of differing thicknesses. The presentation includes infra-red and scanning acoustic microscopy images of various bond types, plus some examples of what can go wrong if the correct manufacturing protocol is not maintained.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

Wafer Level Micropackaging of MEMS Devices Using Thin Film Anodic Bonding

2002 ◽  
Vol 729 ◽  
Author(s):  
Lauren E. S. Rohwer ◽  
Andrew D. Oliver ◽  
Melissa V. Collins
Keyword(s):  
Shear Strength ◽  
Test Sample ◽  
Anodic Bonding ◽  
Mems Devices ◽  
Wafer Level ◽  
Thermal Actuators ◽  
Wafer Level Packaging ◽  
Hermetic Seal ◽  
Leak Testing ◽  
Before And After

AbstractA wafer level packaging technique that involves anodic bonding of Pyrex wafers to released surface micromachined wafers is demonstrated. Besides providing a hermetic seal, this technique allows full wafer release, provides protection during die separation, and offers the possibility of integration with optoelectronic devices. Anodic bonding was performed under applied voltages up to 1000 V, and temperatures ranging from 280 to 400°C under vacuum (10-4Torr). The quality of the bonded interfaces was evaluated using shear strength testing and leak testing. The shear strength of Pyrex-to-polysilicon and aluminum bonds was ∼10-15 MPa. The functionality of surface micromachined polysilicon devices was tested before and after anodic bonding. 100% of thermal actuators, 94% of torsional ratcheting actuators, and 70% of microengines functioned after bonding. The 70% yield was calculated from a test sample of 25 devices.

Sol-Gel Coating Facilitating Si-to-Si Wafer Bonding at Low Temperature

2005 ◽  
Author(s):  
J. Wei ◽  
S. S. Deng ◽  
C. M. Tan
Keyword(s):  
Low Temperature ◽  
Bond Strength ◽  
Wafer Bonding ◽  
Intermediate Layer ◽  
Bonding Temperature ◽  
Sol Gel ◽  
Bond Quality ◽  
Bubble Generation ◽  
High Bond ◽  
High Bond Strength

Silicon-to-silicon wafer bonding by sol-gel intermediate layer has been performed using acid-catalyzed tetraethylthosilicate-ethanol-water sol solution. High bond strength near to the fracture strength of bulk silicon is obtained at low temperature, for example 100°C. However, The bond efficiency and bond strength of this intermediate layer bonding sharply decrease when the bonding temperature increases to elevated temperature, such as 300 °C. The degradation of bond quality is found to be related to the decomposition of residual organic species at elevated bonding temperature. The bubble generation and the mechanism of the high bond strength at low temperature are exploited.

Preparation and Characterization of Cu2Zn(GexSn1-x)Se4 Thin-films from Sputtered Elemental Precursors

2014 ◽  
Vol 1670 ◽  
Author(s):  
Antony Jan ◽  
Yesheng Yee ◽  
Bruce M. Clemens
Keyword(s):  
Band Gap ◽  
Low Cost ◽  
Solar Spectrum ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Material System ◽  
Direct Band Gap ◽  
Glass Substrates ◽  
Before And After ◽  
Direct Band

ABSTRACTThin-film absorber layers for photovoltaics have attracted much attention for their potential for low cost per unit power generation, due both to reduced material consumption and to higher tolerance for defects such as grain boundaries. Cu2ZnGeSe4 (CZGSe) comprises one such material system which has a near-optimal direct band gap of 1.6 eV for absorption of the solar spectrum, and is made primarily from earth-abundant elements.CZGSe metallic precursor films were sputtered from Cu, Zn, and Ge onto Mo-coated soda lime glass substrates. These were then selenized in a two-zone close-space sublimation furnace using elemental Se as the source, with temperatures in the range of 400 to 500 C, and at a variety of background pressures. Films approximately 1-1.5 µm thick were obtained with the expected stannite crystal structure.Next, Cu2ZnSnSe4 (CZTSe), which has a direct band gap of 1.0 eV, was prepared in a similar manner and combined with CZGSe as either compositionally homogeneous or layered absorbers. The compositional uniformity of selenide absorbers made by selenizing compositionally homogeneous Cu-Zn-Ge-Sn precursor layers was determined and the band gap as a function of composition was investigated in order to demonstrate that the band gap is tuneable for a range of compositions. For layered Cu-Zn-Ge/Cu-Zn-Sn precursor films, the composition profile was measured before and after selenization to assess the stability of the layered structure, and its applicability for forming a band-gap-graded device for improved current collection.

SPFM Pre-Cleaning for formation of Silicon Interfaces by Wafer Bonding

1997 ◽  
Vol 477 ◽  
Author(s):  
Stefan Bengtsson ◽  
Karin Ljungberg
Keyword(s):  
Electrical Properties ◽  
Wafer Bonding ◽  
Silicon Surface ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Preparation Procedure ◽  
Cleaning Process ◽  
Spreading Resistance ◽  
Cleaning Procedure

ABSTRACTThe use of H2SO4:H2O2:HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si/Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si/Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique.

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