Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for Power Elec-tronics Technology. Review

2020 ◽  
Vol 25 (6) ◽  
pp. 483-396
Author(s):  
A.V. Afanasev ◽  
◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
S.A. Reshanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Main Method ◽  
Technological Factors ◽  
Current State ◽  
Individual Task ◽  
Technology Review

Currently, chemical gas deposition is the main method for producing high-quality and reproducible epitaxial layers for commercial silicon carbide (SiC) power devices. Based on the experience of ETU «LETI» in the synthesis of monocrystalline SiC, an analysis of the current state of silicon carbide gas phase epitaxy (CVD) technology was carried out. It has been shown that modern CVD reactors allow to implement the growth processes of SiC epitaxial structures of high quality with the following parameters: substrates diameter up to 200 mm; thicknesses of epitaxial layers from 0.1 to 250 μm; layers of n - and p -types conductivity with ranges of doping levels 10-10 cm and 10-10 cm, respectively. At the same time, setting up the technology of the reproducible high-quality growth of epitaxial layers is an individual task for a specific type of reactor. It requires a detailed consideration of the technological factors presented in this paper, which at the end determine the achievable parameters of SiC-epitaxial products

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

2011 ◽  
Vol 679-680 ◽  
pp. 59-62 ◽  
Author(s):  
Stefano Leone ◽  
Yuan Chih Lin ◽  
Franziska Christine Beyer ◽  
Sven Andersson ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Doping Concentration ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Basal Plane Dislocation ◽  
Background Doping ◽  
Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

2008 ◽  
Vol 600-603 ◽  
pp. 635-638 ◽  
Author(s):  
Reza Ghandi ◽  
Hyung Seok Lee ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Optimum Conditions ◽  
Power Devices ◽  
High Quality ◽  
Temperature Range ◽  
Type Silicon ◽  
Different Temperatures

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate

2014 ◽  
Vol 778-780 ◽  
pp. 193-196 ◽  
Author(s):  
Akira Miyasaka ◽  
Jun Norimatsu ◽  
Keisuke Fukada ◽  
Yutaka Tajima ◽  
Yoshiaki Kageshima ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Production Technology ◽  
Smooth Surface ◽  
Growth Parameters ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
High Uniformity

The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrates. Several growth parameters and hardware were optimized to obtain high uniformity wafers. We have succeeded in fabricating high quality C-face wafers with smooth surface and high uniformity.

Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Rendakova ◽  
N. Kuznetsov ◽  
N. Savkina ◽  
M. Rastegaeva ◽  
A. Andreev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Small Area ◽  
Defect Density ◽  
Schottky Barriers ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Vacuum Sublimation ◽  
Sublimation Method

ABSTRACTThe characteristics of SiC high-power devices are currently limited by the small area of the devices, which is usually less than 1 sq. mm. In order to increase device area, defect density in SiC epitaxial structures must be reduced. In this paper, we describe properties of silicon carbide epitaxial layers grown on 4H-SiC wafers with reduced micropipe density. These layers were grown by the vacuum sublimation method. Large area Schottky barriers (up to 8 mm2) were fabricated on SiC epitaxial layers and characterized.

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

2008 ◽  
Vol 1069 ◽  
Author(s):  
Michael O'Loughlin ◽  
K. G. Irvine ◽  
J. J. Sumakeris ◽  
M. H. Armentrout ◽  
B. A. Hull ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Process Optimization ◽  
High Voltage ◽  
Defect Density ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Device Processing ◽  
Defect Densities ◽  
Hot Wall Epitaxy

ABSTRACTThe growth of thick silicon carbide (SiC) epitaxial layers for large-area, high-power devices is described. Horizontal hot-wall epitaxial reactors with a capacity of three, 3-inch wafers have been employed to grow over 350 epitaxial layers greater than 100 μm thick. Using this style reactor, very good doping and thickness uniformity and run-to-run reproducibility have been demonstrated. Through a combination of reactor design and process optimization we have been able to achieve the routine production of thick epitaxial layers with morphological defect densities of around 1 cm−2. The low defect density epitaxial layers in synergy with improved substrates and SiC device processing have resulted in the production of 10 A, 10 kV junction barrier Schottky (JBS) diodes with good yield (61.3%).

scholarly journals A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

2002 ◽  
Vol 742 ◽  
Author(s):  
François Templier ◽  
Nicolas Daval ◽  
Léa Di Cioccio ◽  
Daniel Bourgeat ◽  
Fabrice Letertre ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Power Systems ◽  
Schottky Diodes ◽  
Electrical Performance ◽  
Power Devices ◽  
High Quality ◽  
Reverse Mode ◽  
New Process

ABSTRACTFeasibility of 4H-SiC epitaxy on SiCOI substrates has been demonstrated, with high quality of obtained layers. Power Schottky diodes were designed and fabricated on these new structures, and exhibited very interesting electrical performance, particularly in reverse mode, with Vbr ∼ 1000 V. This technology is very promising for the realization of monolithic SiC power systems.

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

2019 ◽  
Vol 963 ◽  
pp. 407-411 ◽  
Author(s):  
Andrea Severino ◽  
Domenico Mello ◽  
Simona Boninelli ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
High Electron ◽  
Power Devices ◽  
High Quality ◽  
High Electron Mobility ◽  
Implantation Process ◽  
P Type ◽  
High Breakdown Electric Field

Silicon carbide (SiC) is an attractive material for power devices owing to the availability of high-quality epitaxial wafers and superior physical properties, such as its high breakdown electric field strength, high electron mobility, and low anisotropy. Ion implantation is a key process for both n- and p-type selective doping of SiC devices. A subsequent annealing in the temperature range of 1600- 1800°C is required to remove the damage induced by the implantation process and to electrically activate the implanted dopants. The aim of this work is the investigation of the effect of thermal annealing on the damage induced by Phosphorous ion implantation to produce n-type regions.

TSD Reduction by RAF (Repeated a-Face) Growth Method

2012 ◽  
Vol 717-720 ◽  
pp. 9-12 ◽  
Author(s):  
Yasushi Urakami ◽  
Itaru Gunjishima ◽  
Satoshi Yamaguchi ◽  
Hiroyuki Kondo ◽  
Fusao Hirose ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Screw Dislocation ◽  
Cross Section ◽  
Power Devices ◽  
High Quality ◽  
X Ray ◽  
Growth Method ◽  
The Cross

A reduction in threading screw dislocation (TSD) density in 4H-SiC (silicon carbide) crystal is required for SiC power devices. In this study, TSD’s transformation by the RAF (repeated a-face) growth method [1] is observed by transmission X-ray topography (g=0004) of the cross-section of the crystal. Increasing the number of repetitions of a-face growth and offsetting c-face growth to an angle of several degrees reduce TSDs. TSD density is reduced to 1.3 TSD/cm2. The RAF growth method is very effective towards growing high quality SiC crystals.

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