Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material

2010 ◽  
Vol 645-648 ◽  
pp. 1131-1134 ◽  
Author(s):  
Viorel Banu ◽  
Pierre Brosselard ◽  
Xavier Jordá ◽  
Phillippe Godignon ◽  
José Millan
Keyword(s):  
High Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Experimental Results ◽  
Voltage Reference ◽  
Bandgap Voltage Reference ◽  
Stable Voltage

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports the simulated and experimental results as well and a practical and simplified vision on the principles of thermally compensated voltage reference circuits, usually named bandgap references. For our demonstration, we have used SiC Schottky diodes. The influence of the barrier height and the ideality factor on the voltage reference and a comparison between simulated and experimental results are also presented.

Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

2011 ◽  
Vol 679-680 ◽  
pp. 754-757 ◽  
Author(s):  
Viorel Banu ◽  
Phillippe Godignon ◽  
Xavier Jordá ◽  
Mihaela Alexandru ◽  
José Millan
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Schottky Diodes ◽  
Experimental Results ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Bandgap Voltage Reference ◽  
Bipolar Diodes ◽  
Stable Voltage ◽  
Temperature Applications

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

scholarly journals Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation

2019 ◽  
Vol 5 (10) ◽  
pp. eaax5733 ◽  
Author(s):  
T. Harada ◽  
S. Ito ◽  
A. Tsukazaki
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Extreme Environments ◽  
Oxide Interface ◽  
Electric Dipoles ◽  
Bandgap Semiconductors ◽  
High Temperature Operation

High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

On the temperature dependence of the barrier height and the ideality factor in high voltage NinGaAs schottky diodes

1996 ◽  
Vol 39 (10) ◽  
pp. 1457-1462 ◽  
Author(s):  
M. Nathan ◽  
Z. Shoshani ◽  
G. Ashkinazi ◽  
B. Meyler ◽  
O. Zolotarevski
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
High Voltage ◽  
Ideality Factor ◽  
Schottky Diodes

Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

2006 ◽  
Vol 527-529 ◽  
pp. 915-918 ◽  
Author(s):  
Y. Wang ◽  
M.K. Mikhov ◽  
B.J. Skromme
Keyword(s):  
High Temperature ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Extended Defects ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Encapsulation Method ◽  
The Impact

The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni Schottky diodes formed on the annealed surfaces is studied. The surface morphology is also characterized by atomic force microscopy (AFM). Annealing for 10 minutes at temperatures up to 1800 °C with graphite encapsulation actually reduces the high-current ideality factor of the diodes while raising the current-voltage barrier height (linearly extrapolated to unity ideality factor) from 1.453 V to 1.67-1.73 V. Excess leakage current occurs only in a subset of diodes, which are believed to be affected by extended defects. The AFM images show no significant surface roughening, and the graphite can be removed after processing. This encapsulation method is found to be highly effective in preserving the electronic properties of the surface during high temperature annealing.

Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

2012 ◽  
Vol 98 ◽  
pp. 6-11 ◽  
Author(s):  
Durmuş Ali Aldemir ◽  
Ali Kökce ◽  
Ahmet Faruk Özdemir
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Temperature Dependent

Electrical Properties Dependent on Schottky Diode Pd/PSC-pSi(100) Based on Hydrocarbon Gas Sensor

2009 ◽  
Vol 609 ◽  
pp. 195-199
Author(s):  
A. Keffous ◽  
M. Kechouane ◽  
Tahar Kerdja ◽  
Y. Belkacem ◽  
K. Bourenane ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Gas Sensing ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Electrical Parameters ◽  
Porous Sic ◽  
Sic Films

In this paper we present the study of a Schottky diode gas sensing by using porous SiC films with palladium as a catalytic metal. The Schottky diodes were used for the first time for hydrocarbon (C2H6) gas sensing. The properties of the porous SiC films formed by electrochemical method were investigated by scanning electron microscopy (SEM). The electrical measurements were made at room temperature (295 K) in different ambient. The effect of the porous surface structure was investigated by evaluating electrical parameters such as the ideality factor (n), barrier height (Bp) and series resistance (Rs). The porous layer significantly affects the electrical properties of the Schottky diodes. Analysis of current-voltage (I-V) characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor determined by the I–V characteristics was found to be dependent on the SiC thickness. For a thinner SiC layer (0.16 µm), the electrical parameters n was found around 1.135, 0.7041 eV for a barrier height and 45  for a series resistance, but for a thicker one (1.6 µm) n, Bp and Rs were 1.368, 0.7756 eV and 130 , respectively. The low value of the series resistance obtained using Cheung’s method clearly indicated the high performance of the Schottky diode for thinner SiC layer. This effect showed the uniformity of the SiC layer. Finally, sensitivity around 66 % and selectivity of the sensors were reached by using the PSC layer at low voltages below 0.5 Volt.

A GaAs Sagfet Process Using TiSi2 and Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
D. Wood ◽  
J. Mun
Keyword(s):  
Gallium Arsenide ◽  
High Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Disilicide ◽  
Auger Analysis ◽  
Conventional Annealing ◽  
First Time

ABSTRACTFor the first time a combination of titanium disilicide and rapid thermal processing has been used to produce a high temperature stable gate on gallium arsenide. A barrier height of 0.79 V with an ideality factor of 1.02 has been obtained after annealing up to 800°C, and useful results are found up to 900°C. Auger analysis shows little intermixing of the silicide with the underlying substrate, which is not the case for conventional annealing. The advantages of titanium disilicide over the more commonly used tungsten silicide with regard to film resistivity and stress will be discussed. A self-aligned gate MESFET (SAGFET) process has been developed using TiSi2 as the gate material.

BANDGAP VOLTAGE REFERENCE IC FOR HV AUTOMOTIVE APPLICATIONS WITH PSEUDO-REGULATED BIAS AND SERVICE REGULATOR

2013 ◽  
Vol 22 (01) ◽  
pp. 1250069 ◽  
Author(s):  
SERGIO SAPONARA ◽  
LUCA FANUCCI ◽  
TOMMASO BALDETTI ◽  
ENRICO PARDI
Keyword(s):  
Operating Temperature ◽  
Input Voltage ◽  
Automotive Application ◽  
Voltage Reference ◽  
Temperature Drift ◽  
Temperature Range ◽  
Linear Regulator ◽  
Bandgap Voltage Reference ◽  
Stable Voltage ◽  
Operating Temperature Range

The paper presents a bandgap voltage reference (BGR) implemented in TSMC 0.25 μm BCD technology for an automotive application. To withstand a car's battery large voltage variations, from 5 V to 40 V, the circuit features an embedded pseudo-regulator providing a stable bias current for the bandgap core. High-voltage (HV) MOS count has been kept low thus allowing the design of a compact BGR with an area of 0.118 mm2. The BGR has been designed to operate in automotive extended temperature range (-40°C to 150°C) and it provides a stable voltage of 1.21 V, which is also used as reference for a cascade 3.7 V linear regulator. Measurements carried on fabricated IC samples prove the effectiveness of the BGR design in terms of supported input voltage variations and operating temperature range, temperature drift, line regulation and PSRR performance.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

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