Integration of PLZT and BST Family Oxides with GaN.

1999 ◽  
Vol 595 ◽  
Author(s):  
Andrei V. Osinsky ◽  
Vladimir N. Fuflyigin ◽  
Feiling Wang ◽  
Peter I. Vakhutinsky ◽  
Peter E. Norris
Keyword(s):  
Barium Strontium Titanate ◽  
Low Frequency ◽  
Complex Oxide ◽  
Oxide Materials ◽  
Lead Lanthanum Zirconate Titanate ◽  
High Quality ◽  
Lanthanum Zirconate ◽  
Uv Illumination ◽  
Barium Strontium ◽  
Bst Films

AbstractRecent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3 in a thickness range of 0.3-5 [.proportional]m by a solgel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5.10−8 A/cm2.

scholarly journals Integration of PLZT and BST Family Oxides with GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 117-123
Author(s):  
Andrei V. Osinsky ◽  
Vladimir N. Fuflyigin ◽  
Feiling Wang ◽  
Peter I.Vakhutinsky ◽  
Peter E.Norris
Keyword(s):  
Barium Strontium Titanate ◽  
Low Frequency ◽  
Complex Oxide ◽  
Oxide Materials ◽  
Lead Lanthanum Zirconate Titanate ◽  
High Quality ◽  
Lanthanum Zirconate ◽  
Uv Illumination ◽  
Barium Strontium ◽  
Bst Films

Recent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3 in a thickness range of 0.3-5 µm by a solgel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5⋅10−8A/cm2.

Effects of thermal misfit strains on dielectric features of sandwich barium strontium titanate multilayer thin films on metal plates

2021 ◽  
pp. 2150030
Author(s):  
Hanting Dong ◽  
Liang Ke ◽  
Xiangjun Hui ◽  
Jiangfeng Mao ◽  
Haiqing Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Composition Range ◽  
Multilayer Films ◽  
Multilayer Thin Films ◽  
Barium Strontium ◽  
Metal Plates ◽  
Bst Films

Effects of thermal misfit strains on dielectric features for sandwich structural barium strontium titanate (BST) thin films on metal plates were investigated via a modified thermodynamic model. When TEC of substrates is closer to that of BST, larger permittivity and tunability can be received. The tendency of permittivities and tunabilities of such films as a function of TEC of substrates agrees with that of single compositional BST films and compositionally graded BST multilayer films. The highest tunability reaches 60% at the biasing field of 300 kV/cm when the films are onto Ti metal. Moreover, Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3 structure can obtain higher tunability than Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3 structure, while Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3/Ba[Formula: see text]Sr[Formula: see text]TiO3 films show better compatible composition range for relatively larger tunability. Dielectric properties of sandwich-like BST films in some references can also be analyzed based on our calculated results.

Towards a High Quality Factor DC Electric Field Switchable Barium Strontium Titanate Solidly Mounted Resonator

2009 ◽  
Vol 1199 ◽  
Author(s):  
George N. Saddik ◽  
Junwoo Son ◽  
Susanne Stemmer ◽  
Robert A. York
Keyword(s):  
Electric Field ◽  
Quality Factor ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sapphire Substrate ◽  
Bragg Reflectors ◽  
High Quality ◽  
Barium Strontium ◽  
Dc Electric Field ◽  
Acoustic Loss

AbstractBarium strontium titanate solidly mounted resonators (SMR) were fabricated with three different acoustic Bragg reflectors (ABR) on a sapphire substrate. The three devices had ABR structures consisting of W/SiO2/W/SiO2, Mo/SiO2/Mo/SiO2, and Pt/SiO2/Pt/SiO2 respectively. The s-parameters of all three devices were measured. The results showed that the quality factor increased as a function of the material in the ABR structure. The quality factor for the devices with tungsten, molybdenum and platinum in the ABR structures are 101, 88, and 31, respectively. This investigation showed how the material in the ABR structure can contribute to the acoustic loss in the device.

Electrodynamic Properties of Single-Crystal and Thin-Film Strontium Titanate, and Thin-Film Barium Strontium Titanate

1999 ◽  
Vol 603 ◽  
Author(s):  
A.T. Findikoglu ◽  
Q.X. Jia ◽  
C. Kwon ◽  
B.J. Gibbons ◽  
K.Ø. Rasmussen ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Room Temperature ◽  
Coplanar Waveguide ◽  
Low Frequency ◽  
Dissipation Factor ◽  
Barium Strontium ◽  
Dc Bias

AbstractWe have used a coplanar waveguide structure to study broadband electrodynamic properties of single-crystal and thin-film strontium titanate (STO), and thin-film barium strontium titanate (BSTO). We have implemented low-frequency capacitance (100 Hz - 1 MHz), swept-frequency transmittance (45 MHz - 4 GHz), and time-domain transmittance (dc - several GHz) measurements to determine effective refractive index (or, dielectric constant), and dissipation factor (or, loss tangent) as a function of dc bias (up to 4×106 V/m) and temperature (20 - 300 K). The STO samples used superconducting electrodes and were designed to operate at cryogenic temperatures, whereas BSTO samples used normal conducting electrodes and exhibited optimal performance around room temperature. By using nearly identical electrode geometries for all devices, we were able to conduct a direct comparative study among them, and investigate not only single-crystal vs thin-film, but also cryogenic vs room-temperature applications.

Dielectric Properties of Ba1−xSxTiO3 Films Grown on LaAlO3 Substrates

1999 ◽  
Vol 603 ◽  
Author(s):  
Y. Gim ◽  
T. Hudson ◽  
Y. Fan ◽  
A. T. Findikoglu ◽  
C. Kwon ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Barium Strontium Titanate ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent ◽  
Peak Voltage ◽  
Capacitance Measurements ◽  
Barium Strontium ◽  
Bst Films

AbstractWe report the crystal structures and dielectric properties of barium strontium titanate, Ba1−xSrxTiO3 (BST), films deposited on LaAlO3 substrates using pulsed laser deposition, where x = 0.1 to 0.9 at an interval of 0.1. We have found that when x < 0.4 the c-axis is parallel to the plane of the substrate but normal as x approaches 1. Temperature-dependent capacitance measurements at 1 MHz show that the capacitance has a peak and that the peak temperature decreases with increasing x. We have found that the peak temperatures of the films are about 70 °C higher than those of bulk BSTs when x < 0.4. From room-temperature capacitance (C) vs applied voltage (V) measurements, we have found that the C-V curves of the BST films exhibit hysteresis except for x = 0.9 and that the peak voltage at which the capacitance becomes maximum decreases with increasing x. At room temperature, the Ba0.6Sr0.4 TiO3 film exhibits the largest capacitance tunability (≈ 37%) with an applied electric field of 40 kV/cm.

Characterization of Lead Lanthanum Zirconate Titanate Ceramics Co-Doped with Lanthanide Ions

2016 ◽  
Vol 98 ◽  
pp. 75-81 ◽  
Author(s):  
Malgorzata Plonska ◽  
Jolanta Dzik
Keyword(s):  
Lanthanide Ions ◽  
Oxide Materials ◽  
Ceramic Powders ◽  
Lead Lanthanum Zirconate Titanate ◽  
Lanthanum Zirconate ◽  
Pressing Method ◽  
Ceramic Samples ◽  
Titanate Ceramics ◽  
Co Doped

The aim of this work was to obtain Pb0.92(La0.08)(Zr0.65Ti0.35)0.98O3 materials co-doped with two different lanthanide ions (Ln3+) and characterization how they influence on the physical properties of prepared 8/65/35 PLZT: Ln3+ ceramics. As a co-dopant, praseodymium (Pr3+) and neodymium (Nd3+) ions were used at the concentration of 0.0 and 0.5 wt.% respectively. The ceramic powders of 8/65/35 PLZT, PLZT:Pr3+ as well PLZT:Nd3+ were synthesized by conventional ceramic route, from high purity raw oxide materials (>99,9%). All compositions of the ceramic samples were sintered via single time process at Ts=1200°C/3h, by the hot uniaxial pressing method. Performed measurements have shown dependence of used dopant on structure, microstructure, and dielectric as well optical properties of the fabricated 8/65/35 PLZT: Ln3+ materials.

Effect of Annealing Temperature on the Microstructure of Barium Strontium Titanate Films

2008 ◽  
Vol 368-372 ◽  
pp. 56-58
Author(s):  
Jia Xuan Liao ◽  
En Qiu Li ◽  
Zhong Tian ◽  
Jiang Xu ◽  
Hai Guang Yang
Keyword(s):  
Magnetron Sputtering ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Annealing Temperature ◽  
Structural Characteristics ◽  
Rf Magnetron Sputtering ◽  
Surface And Interface ◽  
Barium Strontium ◽  
Bst Films

Barium strontium titanate (Ba1−xSrxTiO3, BST) films have been prepared on Pt/Ti/SiO2/Si by medium frequency (MF) magnetron sputtering, and subsequently in situ crystallized at 500-700°C. The microstructures of the MF-BST films are studied. BST films prepared by radio frequency (RF) magnetron sputtering and exhibited preferential (110) orientation, are compared. XRD shows that the MF-BST films exhibit preferential (111) orientation and better crystallization than the RF-BST films at the same annealing temperature. AFM displayed that the MF-BST films were smooth and compact. XPS analysis exhibited that the MF-BST films revealed better surface and interface structural characteristics. Their dielectric properties were also compared.

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