Planarization of Copper Damascene Interconnects by Spin-Etch Process: A Chemical Approach

2000 ◽  
Vol 613 ◽  
Author(s):  
Shyama P. Mukherjee ◽  
Joseph A. Levert ◽  
Donald S. DeBear
Keyword(s):  
Fluid Flow ◽  
Process Parameters ◽  
Removal Rate ◽  
Normal Load ◽  
Chemical Mechanical Planarization ◽  
Copper Interconnects ◽  
Primary Process ◽  
Technical Parameters ◽  
Controllable Process ◽  
Damascene Interconnects

ABSTRACTThe present work describes the process principles of “Spin-Etch Planarization” (SEP), an emerging method of planarization of dual damascene copper interconnects. The process involves a uniform removal of copper and the planarization of surface topography of copper interconnects by dispensing abrasive free etchants to a rotating wafer. The primary process parameters comprise of (a) Physics and chemistry of etchants, and (b) Nature of fluid flow on a spinning wafer. It is evident, that unlike conventional chemical-mechanical planarization, which has a large number of variables due to the presence of pads, normal load, and abrasives, SEP has a smaller number of process parameters and most of them are primary in nature. Based on our preliminary works, we have presented the basic technical parameters that contribute to the process and satisfy the basic requirements of planarization such as (a) Uniformity of removal (b) Removal rate (c) Degree of Planarization (d) Selectivity. The anticipated advantages and some inherent limitations are discussed in the context of process principles. We believe that when fully developed, SEP will be a simple, predictable and controllable process.

Planarization of Copper Damascene Interconnects by Spin-Etch Process: A Chemical Approach

2000 ◽  
Vol 612 ◽  
Author(s):  
Shyama P. Mukherjee ◽  
Joseph A. Levert ◽  
Donald S. Debear
Keyword(s):  
Fluid Flow ◽  
Process Parameters ◽  
Removal Rate ◽  
Normal Load ◽  
Chemical Mechanical Planarization ◽  
Copper Interconnects ◽  
Primary Process ◽  
Technical Parameters ◽  
Controllable Process ◽  
Damascene Interconnects

ABSTRACTThe present work describes the process principles of “Spin-Etch Planarization” (SEP), an emerging method of planarization of dual damascene copper interconnects. The process involves a uniform removal of copper and the planarization of surface topography of copper interconnects by dispensing abrasive free etchants to a rotating wafer. The primary process parameters comprise of (a) Physics and chemistry of etchants, and (b) Nature of fluid flow on a spinning wafer. It is evident, that unlike conventional chemical-mechanical planarization, which has a large number of variables due to the presence of pads, normal load, and abrasives, SEP has a smaller number of process parameters and most of them are primary in nature. Based on our preliminary works, we have presented the basic technical parameters that contribute to the process and satisfy the basic requirements of planarization such as (a) Uniformity of removal (b) Removal rate (c) Degree of Planarization (d) Selectivity. The anticipated advantages and some inherent limitations are discussed in the context of process principles. We believe that when fully developed, SEP will be a simple, predictable and controllable process.

scholarly journals Novel Abrasive-Impregnated Pads and Diamond Plates for the Grinding and Lapping of Single-Crystal Silicon Carbide Wafers

2021 ◽  
Vol 11 (4) ◽  
pp. 1783
Author(s):  
Ming-Yi Tsai ◽  
Kun-Ying Li ◽  
Sun-Yu Ji
Keyword(s):  
Silicon Carbide ◽  
Wear Rate ◽  
Single Crystal ◽  
Traditional Method ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Grit ◽  
Ceramic Binder

In this study, special ceramic grinding plates impregnated with diamond grit and other abrasives, as well as self-made lapping plates, were used to prepare the surface of single-crystal silicon carbide (SiC) wafers. This novel approach enhanced the process and reduced the final chemical mechanical planarization (CMP) polishing time. Two different grinding plates with pads impregnated with mixed abrasives were prepared: one with self-modified diamond + SiC and a ceramic binder and one with self-modified diamond + SiO2 + Al2O3 + SiC and a ceramic binder. The surface properties and removal rate of the SiC substrate were investigated and a comparison with the traditional method was conducted. The experimental results showed that the material removal rate (MRR) was higher for the SiC substrate with the mixed abrasive lapping plate than for the traditional method. The grinding wear rate could be reduced by 31.6%. The surface roughness of the samples polished using the diamond-impregnated lapping plate was markedly better than that of the samples polished using the copper plate. However, while the surface finish was better and the grinding efficiency was high, the wear rate of the mixed abrasive-impregnated polishing plates was high. This was a clear indication that this novel method was effective and could be used for SiC grinding and lapping.

Optimization and surface modification in electrical discharge machining of AA 6061/SiCp composite using Cu–W electrode

2015 ◽  
Vol 231 (3) ◽  
pp. 332-348 ◽  
Author(s):  
Balbir Singh ◽  
Jatinder Kumar ◽  
Sudhir Kumar
Keyword(s):  
Process Parameters ◽  
Electrical Discharge Machining ◽  
Removal Rate ◽  
Surface Characteristics ◽  
Electrode Wear ◽  
Material Transfer ◽  
Machined Surface ◽  
Recast Layer Thickness ◽  
Pulse On Time ◽  
Pulse Off Time

This paper presents the experimental investigation on the electro-discharge machining of aluminum alloy 6061 reinforced with SiC particles using sintered Cu–W electrode. Experiments have been designed as per central composite rotatable design, using response surface methodology. Machining characteristics such as material removal rate (MRR), electrode wear ratio (EWR), and surface roughness (SR) have been investigated under the influence of four electrical process parameters; namely peak current, pulse on time, pulse off time, and gap voltage. The process parameters have been optimized to obtain optimal combination of MRR, EWR, and SR. Further, the influence of sintered Cu–W electrode on surface characteristics has been analyzed with scanning electron microscopy, energy dispersive spectroscopy, and Vicker microhardness tests. The results revealed that all the process parameters significantly affect MRR, EWR, and SR. The machined surface properties are modified as a result of material transfer from the electrode. The recast layer thickness is increased at higher setting of electrical parameters. The hardness across the machined surface is also increased by the use of sintered Cu–W electrode.

Effects of Alkaline Nano-SiO2 Abrasive on Planarization of 300mm Copper Patterned Wafer

2013 ◽  
Vol 634-638 ◽  
pp. 2949-2954
Author(s):  
Xin Liang Tang ◽  
Yu Ling Liu ◽  
Hong Yuan Zhang ◽  
Jie Bao
Keyword(s):  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Initial Step ◽  
Step Height ◽  
Copper Removal ◽  
Copper Wafers

Silica abrasive plays an important role in chemical mechanical planarization (CMP) of copper. In this paper, effect of different silica abrasive concentrations on copper removal rate and planarization performance of copper was investigated. The results show that the copper removal rate was increased as the concentration of silica abrasive increase. However, excessive abrasive will lead to a decreased copper removal rate. The initial step height values of the multilayer copper wafers were all about 2500Å, and after being polished for 30s, the remaining values of step height of slurry A, B, C and D were 717 Å, 906 Å, 1222 Å and 1493 Å. It indicates that alkaline copper slurries with different abrasive concentrations all had a good planarization performance on copper patterned wafer CMP. As the abrasive concentration increased, the planarization capability was enhanced.

Investigation of the Spark Cycle Effect on Material Removal Rate in Wire Electrical Discharge Machining

Manufacturing ◽  
2003 ◽  
Author(s):  
Scott F. Miller ◽  
Albert J. Shih
Keyword(s):  
Process Parameters ◽  
Material Removal Rate ◽  
Electrical Discharge ◽  
Material Removal ◽  
Electrical Discharge Machining ◽  
Removal Rate ◽  
Short Circuit ◽  
Wire Electrical Discharge Machining ◽  
Time Duration ◽  
Edm Process

The development of new, advanced engineering materials and the needs for precise and flexible prototype and low-volume production have made wire electrical discharge machining (EDM) an important manufacturing process to meet such demand. This research investigates the effect of spark on-time duration and spark on-time ratio, two important EDM process parameters, on the material removal rate (MRR) and surface integrity of four types of advanced material: porous metal foams, metal bond diamond grinding wheels, sintered Nd-Fe-B magnets, and carbon-carbon bipolar plates. An experimental procedure was developed. During the wire EDM, five types of constraints on the MRR due to short circuit, wire breakage, machine slide speed limit, and spark on-time upper and lower limits have been identified. An envelope of feasible EDM process parameters is created and compared across different work-materials. Applications of such process envelope to select process parameters for maximum MRR and for machining of micro features are presented.

Effects of Additives in KOH Based Electrolytes on Cu ECMP

2007 ◽  
Vol 991 ◽  
Author(s):  
Tae-Young Kwon ◽  
In-Kwon Kim ◽  
Jin-Goo Park
Keyword(s):  
Citric Acid ◽  
Applied Voltage ◽  
Counter Electrode ◽  
Corrosion Potential ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Corrosion Current ◽  
Dynamic State ◽  
Static State ◽  
Potentiodynamic Curves

ABSTRACTThe purpose of this study was to characterize KOH based electrolytes and effects of additives on electro-chemical mechanical planarization. The electrochemical mechanical polisher was made to measure the potentiodynamic curve and removal rate of Cu. The potentiodynamic curves were measured in static and dynamic states in investigated electrolytes using a potentiostat. Cu disk of 2 inch was used as a working electrode and Pt electroplated platen was used as a counter electrode. KOH was used as the electrolyte. H2O2 and citric acid were used as additives for the ECMP of Cu. In static and dynamic potentiodynamic measurements, the corrosion potential decreased and corrosion current increased as a function of KOH concentration. In dynamic state, different potentiodynamic curve was obtained when compared to the static state. The current density did not decrease in passivation region by mechanical polishing effect. The static etch and removal rate were measured as function of KOH concentration and applied voltage. In ECMP system, polishing was performed at 30 rpm and 1 psi. The removal rate was about 60 nm/min at 0.3 V when 5 wt% KOH was used. Also, the effect of additive was investigated in KOH based electrolyte on removal rates. As a result, The removal rate was increased to 350 nm/min when 5wt% KOH, 5vol% H2O2, 0.3 M citric acid were used.

scholarly journals Process Parameter Optimization for Abrasive Water Jet Machining of Titanium Alloy Using Meta-Heuristic Algorithms

2018 ◽  
Vol 221 ◽  
pp. 01004
Author(s):  
Vishal S Sharma ◽  
Amit Kumar ◽  
Munish Kumar Gupta ◽  
Neeraj Bhanot
Keyword(s):  
Titanium Alloy ◽  
Process Parameters ◽  
Heuristic Algorithms ◽  
Removal Rate ◽  
Short Interval ◽  
Water Jet ◽  
Abrasive Water Jet ◽  
Influence Of Process Parameters ◽  
Abrasive Water Jet Machining ◽  
Industrial Sectors

Recently, the trend of optimization algorithms for improvements of surface quality and productivity characteristics in abrasive water jet machining of titanium alloy (Ti-6Al-4V alloy) has become increasingly more widespread in various industrial sectors i.e., aircraft and automobile Industries. Here, the present research attempts to select the ideal or best AWJM process parameters by implementing the well known meta-heuristic algorithm i.e., Teacher learning based optimization method (TLBO). The AWJM experiments as per the Taguchi L9 orthogonal array were performed on Ti 6Al-4V titanium alloy by considering jet transverse speed, stand-off distance and abrasive flow as the input parameters. Then, the influence of process parameters on surface roughness and material removal rate has been performed by means plot and ANOVA analysis. After that, the results are optimized with the TLBO method. The overall results indicate that the TLBO method is an efficient method used to find the optimal results with very short interval of time i.e., within 3 sec.

Characterisation of the Femtosecond Laser Micro-Grooving Process for Germanium Substrates

2016 ◽  
Vol 874 ◽  
pp. 291-296 ◽  
Author(s):  
Lin Li ◽  
Jun Wang ◽  
Huai Zhong Li
Keyword(s):  
Experimental Study ◽  
Process Parameters ◽  
Material Removal ◽  
Removal Rate ◽  
High Quality ◽  
Scan Speed ◽  
Micro Grooving ◽  
Fs Laser ◽  
Selection Of ◽  
Germanium Substrates

An experimental study is reported to characterise the femtosecond (FS) laser grooving process for Germanium (Ge) substrates. The effects of process parameters, including laser fluence, pulse repetition rate and scan speed, on the groove characteristics, material removal rate (MRR) and heat affected zone (HAZ) size are discussed. It is shown that with properly selected process parameters, high quality micro-grooves can be obtained on Ge wafers. Recommendations are finally made on the selection of the most appropriate process parameters for FS micro-grooving of Ge substrates.

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