Surface Modification of Cubic Gan Buffer Layer Grown by Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Akira Nagayama ◽  
Ryuji Katayama ◽  
Jun Wu ◽  
Kentaro Onabe ◽  
Hidetaka Sawada ◽  
...  
Keyword(s):  
Transport Properties ◽  
Buffer Layer ◽  
Stacking Faults ◽  
X Ray Diffraction ◽  
Band Bending ◽  
Transmission Electron ◽  
Parallel Conduction ◽  
Cubic Gan ◽  
Gan Film ◽  
Gan Buffer Layer

ABSTRACTAnisotropic X-Ray diffraction (XRD) and transport properties of cubic GaN grown on GaAs substrates correspond to the features of low-temperature grown GaN (LT-GaN) buffer layer. When the LT-GaN layer is grown on the surface tilted from (001) to [1-10] with annealing in arsenic ambient, the macroscopic step edges along [1-10] direction are modified by either the ambient of thermal annealing, or substrate misorientation. A parallel conduction in GaN, GaAs, and GaN/GaAs hetero-interface was observed by photoconductivity measurements. Transmission electron microscope (TEM) observation shows that self-annihilations for (-111) B stacking faults are preferentially occurred near GaAs interface when GaN film grown on the surface tilted from (001) toward [1-10] (As step edge) is annealed in arsenic ambient. TEM observation also shows that stacking faults and dislocations are preferentially generated near GaN/GaAs interface. It is suggested that anisotropic transport properties correspond to the well-like potential generated by band bending at GaN/GaAs interface. The nearly isotropic mobility of 3,000 cm2/Vsec at 77K is obtained by improving interface property.

TiN/GaN Metal/Semiconductor Multilayer Nanocomposites Grown by Reactive Pulsed Laser Deposition

2005 ◽  
Vol 872 ◽  
Author(s):  
Vijay Rawat ◽  
Timothy D. Sands
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Grain Sizes ◽  
Transmission Electron ◽  
Free Metal ◽  
Gan Buffer Layer

AbstractTiN/GaN multilayers with periods ranging from 5 nm to 50 nm were grown by reactive pulsed laser deposition (PLD) using elemental metal targets in an ammonia ambient at 20mtorr onto Si(100), MgO(100) and sapphire(0001) substrates. For growth on Si and MgO substrates, an epitaxial 40 nm thick TiN buffer layer was deposited prior to deposition of the multilayers. An epitaxial 150 nm GaN buffer layer was grown on sapphire substrates. For all substrates, layer thicknesses and periods investigated, x-ray diffraction and cross-sectional transmission electron microscopy revealed {0001} texture for GaN, and {111} texture for TiN in the multilayers. Both TiN layers and GaN layers thicker than ∼ 2nm appear to be continuous, with no evidence of agglomeration. Both phases are crystalline, with lateral grain sizes comparable to the layer thickness. These results suggest that epitaxy will not be necessary to fabricate pinhole free metal/semiconductor multilayers in the nitride system.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Stacking Faults in SiC Nanowires

2008 ◽  
Vol 8 (7) ◽  
pp. 3504-3510 ◽  
Author(s):  
K. L. Wallis ◽  
M. Wieligor ◽  
T. W. Zerda ◽  
S. Stelmakh ◽  
S. Gierlotka ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Stacking Faults ◽  
Multiwall Carbon Nanotubes ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Ir Spectrometry ◽  
X Ray ◽  
Sic Nanowires ◽  
Transmission Electron ◽  
Multiwall Carbon

SiC nanowires were obtained by a reaction between vapor silicon and multiwall carbon nanotubes, CNT, in vacuum at 1200 °C. Raman and IR spectrometry, X-ray diffraction and high resolution transmission electron microscopy, HRTEM, were used to characterize properties of SiC nanowires. Morphology and chemical composition of the nanowires was similar for all samples, but concentration of structural defects varied and depended on the origin of CNT. Stacking faults were characterized by HRTEM and Raman spectroscopy, and both techniques provided complementary results. Raman microscopy allowed studying structural defects inside individual nanowires. A thin layer of amorphous silicon carbide was detected on the surface of nanowires.

Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF–MBE

2005 ◽  
Vol 278 (1-4) ◽  
pp. 411-414 ◽  
Author(s):  
Ryuhei Kimura ◽  
Takeaki Suzuki ◽  
Masamichi Ouchi ◽  
Kouichi Ishida ◽  
Kiyoshi Takahashi
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Film Growth ◽  
Cubic Gan ◽  
Gan Film

Growth of heteroepitaxial GaSb thin films on Si(100) substrates

2004 ◽  
Vol 19 (8) ◽  
pp. 2315-2321 ◽  
Author(s):  
Thang Nguyen ◽  
Walter Varhue ◽  
Edward Adams ◽  
Mark Lavoie ◽  
Stephen Mongeon
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Lattice Mismatch ◽  
Stacking Faults ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Radio Frequency Sputtering ◽  
Atomic Force ◽  
Transmission Electron

The heteroepitaxial growth of GaSb thin films on Si(100) and GaAs(100) substrates is presented. The growth technique involves the use of atomic Ga and Sb species, which are provided by thermal effusion and radio frequency sputtering, respectively. The crystalline quality of the heteroepitaxial GaSb film on the Si substrate is high despite the larger lattice mismatch. Epitaxial quality is determined by high-resolution x-ray diffraction and Rutherford backscatter spectrometry channeling. Atomic-force microscopy is used to monitor the evolution of surface morphology with increasing film thickness. Transmission electron microscopy shows the formation of stacking faults at the Si/GaSb interface and their eventual annihilation with increasing GaSb film thickness. Annihilation of stacking faults occurs when two next-neighbor mounds meet during the overgrowth of a common adjacent mound.

Tem Structure Investigations of Low-Temperature MBE Grown Inalas Layers on INP Substrate

1992 ◽  
Vol 263 ◽  
Author(s):  
P. Werner ◽  
Z. Liliental-Weber ◽  
K.M. Yu ◽  
E.R. Weber ◽  
Z. Rek ◽  
...  
Keyword(s):  
Electrical Resistance ◽  
Stacking Faults ◽  
X Ray Diffraction ◽  
Real Crystal ◽  
X Ray ◽  
Group Iii ◽  
Temperature Range ◽  
Density Of Dislocations ◽  
Transmission Electron ◽  
Structure Investigations

ABSTRACTThe real crystal structure of In0.52A10.48As layers grown on InP<001> substrate as a function of the growth temperature (between 150°C and 450°C) was investigated. The following structural / electrical analyses were applied to the samples: transmission electron microscopy (TEM), x-ray diffraction and particle induced x-ray emission (PIXE). In the temperature range between 200°C and 450°C good epitaxial growth of InAlAs layers can be achieved with a low density of dislocations and stacking faults. Ordering of group-III elements on {111} planes was observed for these layers. Structure models of such ordered domains are discussed. At growth temperatures below 300 °C additional As (≈2%) is incorporated in the lattice. Growth at temperatures below 200°C leads to the formation of pyramidal defects with As grains in their cores. As-grown as well as annealed InAlAs layers show a nearly constant, high electrical resistance (106-107Ωcm) in the whole temperature range.

scholarly journals Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

2017 ◽  
Vol 24 (5) ◽  
pp. 981-990 ◽  
Author(s):  
Arman Davtyan ◽  
Sebastian Lehmann ◽  
Dominik Kriegner ◽  
Reza R. Zamani ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Bragg Peak ◽  
Stacking Faults ◽  
Growth Direction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Patterson Function ◽  
Transmission Electron ◽  
Gaas Nanowires ◽  
Gaas Nanowire

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the [000\bar{1}] direction in the vicinity of the wurtzite 00\bar{1}\bar{5} Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.

Atomic Force Microscopy Study of GaN-Buffer Layers on SiC(0001) By MOCVD

1996 ◽  
Vol 423 ◽  
Author(s):  
Dongsup Lim ◽  
Dongjin Byun ◽  
Gyeungho Kim ◽  
Ok-Hyun Nam ◽  
In-Hoon Choi ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Microscopy Study ◽  
Growth Conditions ◽  
Interfacial Free Energy ◽  
Buffer Layers ◽  
Optimum Growth ◽  
Cross Sectional ◽  
Atomic Force ◽  
Transmission Electron ◽  
Gan Buffer Layer

AbstractBuffer layers promote lateral growth of films due to a decrease in interfacial free energy between the film and substrate, and large 2-dimensional nucleation. Smooth surfaces of thebuffer layers are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by atomic force microscope (AFM). AFM analysis of the GaN nucleation layers led to an optimum growth conditions of the GaN-buffer layer which was confirmed by cross-sectional transmission electron microscopy, Hall measurements and photoluminescence spectra. Optimum growth conditions for GaN-buffer layer on SiC(0001) was determined to be 1 minute growing at 550°C.

scholarly journals Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 197 ◽  
Author(s):  
Vladimir Lucian Ene ◽  
Doru Dinescu ◽  
Nikolay Djourelov ◽  
Iulia Zai ◽  
Bogdan Stefan Vasile ◽  
...  
Keyword(s):  
High Resolution ◽  
Diffusion Length ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
Correlation Lengths ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Elemental Diffusion ◽  
Aln Buffer ◽  
Gan Film

The present article evaluates, in qualitative and quantitative manners, the characteristics (i.e., thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge, and screw dislocation densities), within two GaN/AlN/Si heterostructures, that alter their efficiencies as positron moderators. The structure of the GaN film, AlN buffer layer, substrate, and their growth relationships were determined through high-resolution transmission electron microscopy (HR-TEM). Data resulting from high-resolution X-ray diffraction (HR-XRD) was mathematically modeled to extract dislocation densities and correlation lengths in the GaN film. Positron depth profiling was evaluated through an experimental Doppler broadening spectroscopy (DBS) study, in order to quantify the effective positron diffusion length. The differences in values for both edge ( ρ d e ) and screw ( ρ d s ) dislocation densities, and correlation lengths (Le, Ls) found in the 690 nm GaN film, were associated with the better effective positron diffusion length (Leff) of L eff GaN 2 = 43 ± 6 nm.

Annihilation of Threading Dislocations in Regrown GaN on Electrochemically Etched Nanoporous GaN Template with Optimization of Buffer Layer Growth

2007 ◽  
Vol 31 ◽  
pp. 227-229
Author(s):  
C.B. Soh ◽  
H. Hartono ◽  
S.Y. Chow ◽  
Soo Jin Chua
Keyword(s):  
Electron Microscopy ◽  
Buffer Layer ◽  
Electrochemical Etching ◽  
Layer Growth ◽  
Device Fabrication ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
High Quality ◽  
Transmission Electron ◽  
Gan Buffer Layer

Nanoporous GaN template has been fabricated by electrochemical etching to give hexagonal pits with nano-scale pores of size 20-50 nm in the underlying grains. Electrochemical etching at The effect of GaN buffer layer grown at various temperatures from 650°C to 1015°C on these as-fabricated nano-pores templates are investigated by transmission electron microscopy. The buffer layer grown at the optimized temperature of 850°C partially fill up the pores and voids with annihilation of threading dislocations, serving as an excellent template for high-quality GaN growth. This phenomenon is, however not observed for the samples grown with other temperature buffer layers. The PL spectrum for the regrowth GaN on nanoporous GaN template also shows an enhancement of PL intensity for GaN peak compared to as-grown GaN template, which is indicative of its higher crystal quality. This makes it as a suitable template for subsequent device fabrication.

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