Selective Doping of 4H-SiC by Aluminum/Boron Co-diffusion

2000 ◽  
Vol 640 ◽  
Author(s):  
Ying Gao ◽  
S. I. Soloviev ◽  
X. Wang ◽  
C. C. Tin ◽  
T. S. Sudarshan
Keyword(s):  
Carrier Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Hall Effect Measurement ◽  
Aluminum Concentration ◽  
Current Voltage ◽  
High Aluminum Concentration ◽  
Doping Profiles ◽  
Secondary Ion ◽  
Very High ◽  
High Aluminum

ABSTRACTBased upon graphite mask, selective aluminum/boron doping of SiC by thermal diffusion has been successfully realized in a temperature range of 1800 to 2100°C. Secondary ion mass spectrometry (SIMS) was used to identify the doping profiles, which showed very high aluminum concentration (5×1019 cm−3) near the surface and linearly graded boron profile up to several micrometers in depth. Hall-effect measurement was also employed to obtain the carrier concentration, which showed more than 1019 cm−3 carrier concentration at room temperature. Cathodoluminescence (CL) image clearly illustrated the locally diffused pattern. In addition, planar p-n diodes based upon this technique were fabricated and current-voltage (I-V) characteristics were measured. Excellent rectification property has been obtained. Built-in voltage of 2.9 V in the formed p-n junction was obtained by capacitance-voltage (C-V) measurement.

scholarly journals On the origin of photodarkening resistance in Yb-doped silica fibers with high aluminum concentration

2020 ◽  
Vol 11 (1) ◽  
pp. 115
Author(s):  
Magnus Engholm ◽  
Matthew Tuggle ◽  
Courtney Kucera ◽  
Thomas Hawkins ◽  
Peter Dragic ◽  
...  
Keyword(s):  
Aluminum Concentration ◽  
Silica Fibers ◽  
High Aluminum Concentration ◽  
High Aluminum

scholarly journals Влияние условий осаждения из паров металлоорганических соединений на получение эпитаксиальных слоев n-CdTe с использованием изопропилиодида

2022 ◽  
Vol 56 (3) ◽  
pp. 350
Author(s):  
А.Н. Моисеев ◽  
В.С. Евстигнеев ◽  
А.В. Чилясов ◽  
М.В. Костюнин
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Compounds ◽  
Hall Effect Measurement ◽  
Iodine Concentration ◽  
Total Iodine ◽  
Hydrogen Flow ◽  
Active Concentration ◽  
Activation Efficiency ◽  
Wall Zone ◽  
Secondary Ion

The dependence of iodine incorporation in CdTe layers on the deposition conditions during metalorganic vapor phase epitaxy is investigated. The growth of the layers was carried out from dimethylcadmium and diethyltellurium in the hydrogen flow in a vertical reactor with a hot wall condition at a total pressure of 20 kPa. The total iodine concentration was determined by secondary ion mass spectrometry, the electrically active concentration was determined from the Hall effect measurement. The iodine incorporation depends on the crystallographic orientation of the substrate (were studied (100), (310), (111)A, (111)B, (211)A and (211)B), the concentration of the doping precursor (flux range 5·10–8–3·10–6 mol/min), the mole ratio of organometallic compounds (DMCd/DETe=0.25–4), growth temperature (335–390°C) and the walls of the reactor above the pedestal (hot wall zone 290–320°C). The total iodine concentration reached 5·1018 cm–3 and the activation efficiency was ~4 %. After thermal annealing in cadmium vapor at 500°C the activation efficiency was ~100 %.

Ion implantation of Carbon and Silicon into Ge2Sb2Te5: Ion Profiles and Post Crystallization Redistribution

2011 ◽  
Vol 1338 ◽  
Author(s):  
Guy M. Cohen ◽  
Simone Raoux ◽  
Marinus Hopstaken ◽  
Siegfried Maurer
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Carbon Doping ◽  
Recrystallization Annealing ◽  
Silicon Doping ◽  
Ion Energy ◽  
Ion Profiles ◽  
Dopant Redistribution ◽  
Doping Profiles ◽  
Secondary Ion

ABSTRACTIon implantation of Ge2Sb2Te5 (GST) enables localized doping of the film by using conventional lithography. Although the doped region dimensions and the doping concentration profile are defined by the opening in the mask and the ion energy, longitudinal and lateral straggling of implanted ions leads to a spread in the ions final location. Additionally, a thermal treatment such as one that induces a phase transition may lead to redistribution of the implanted dopants and further increase the spread. In this work we demonstrate doping of GST by ion implantation. Using Secondary Ion Mass Spectrometry (SIMS) we studied the as-implanted doping profiles obtain by ion implantation of carbon and silicon into GST. We also investigated by SIMS the dopant redistribution following a recrystallization annealing. The as-implanted ion profiles were found to be in fair agreement with TRIM simulation. The dopants profiles show little change after a crystallization annealing at 200°C for silicon doping and at 350°C for carbon doping.

The Formation of Abrupt N+ Doping Profiles Using Atomic Hydrogen and Sb During Si MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
P.E. Thompson ◽  
C. Silvestre ◽  
M. Twigg ◽  
G. Jernigan ◽  
D.S. Simons
Keyword(s):  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Molecular Beam Epitaxy Growth ◽  
Atomic Concentration ◽  
Hall Measurements ◽  
N Doping ◽  
Sb Doping ◽  
Doping Profiles ◽  
Secondary Ion

AbstractPreviously, atomic hydrogen has been shown to be effective in reducing the segregation of Sb on Si(100) during solid source molecular beam epitaxy growth. In this work we have investigated the electrical activation of the Sb. Using Hall measurements, spreading resistance profilometry, and secondary ion mass spectrometry, we have demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500°C produced well-defined doping spikes. Comparing the sheet carrier concentration obtained by Hall measurements to the Sb atomic concentration obtained by SIMS, the overall activation of the Sb was greater than 50%.

Interfacial Reactions Between Metal Thin Films and p-GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
J.T. Trexler ◽  
S.J. Miller ◽  
P.H. Holloway ◽  
M.A. Khan
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Doping Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Surface Region ◽  
Metal Thin Films ◽  
Current Voltage ◽  
P Type ◽  
Secondary Ion

ABSTRACTThe reactions between Au, Au/Ni and Au/C/Ni thin films on p-GaN have been studied using current-voltage (I-V) measurements, Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS). The metallization schemes consisted of ≈2000Ǻ sputtered Au, 1000Ǻ Au/500Ǻ Ni, and 1000Ǻ Au/100Ǻ C/500Ǻ Ni electron beam evaporated. The Au/Ni metallization scheme is of particular interest since it is the basis for the most commonly used ohmic p-type contacts for blue GaN LED’s. Au does not decompose the GaN matrix, while Ni has been shown to react with GaN above a temperature of 400° C for times longer than 5 minutes. Upon decomposition of the GaN by Ni, incorporation of C at the metal/GaN interface occurred. It is believed that a regrowth of GaN occurred, with the surface region being doped with C. Attempts at increasing this doping concentration by introducing an interfacial C layer were not successful.

scholarly journals Feeding and body condition of an invasive fish species under different environmental conditions

2016 ◽  
Vol 14 (1) ◽  
Author(s):  
Laryssa H. R. Pazianoto ◽  
Vivian de M. Cionek ◽  
Fábio N. O. Fogaça ◽  
Evanilde Benedito
Keyword(s):  
Nutritional Value ◽  
Dry Weight ◽  
Nutrient Content ◽  
Aluminum Concentration ◽  
Invasive Fish ◽  
High Aluminum Concentration ◽  
Quality Of Food ◽  
Main Item ◽  
High Aluminum

ABSTRACT Diet, energy density (ED) and relative condition factor (Kn ) were used to investigate the energetic assimilation of the invasive fish Hemiodus orthonops under different environmental condition of the upper rio Paraná floodplain. Samples were taken in June and September 2013 and 2014. Nutrient content was determined for sediment. The diet was combined in the Food Index (IAi%), ED was expressed in Kcal/g of dry weight and Kn was calculated by: Kn = Wt/We, where Wt is the total weight and We the expected weight. Detritus/sediment prevailed in the stomachs of specimens from Ivinhema and Baia, while Algae was the main item in Paraná, reflecting the resource availability. ED and Kn from Ivinhema specimens were the greatest, consequence of the quality of food and lower spent on searching and handling food. The Paraná specimens showed lower ED values, but higher Kn values, due to algae consumption, a nutrient-rich resource. Baia presented high aluminum concentration on the sediment and the lower pH values, which contribute to reduce the nutritional value of the detritus and the ED and Kn values of their specimens. In conclusion, H.orthonops is capable to take advantage of the resources availability in the different environments, ensuring their establishment.

Aluminum in lake water and organs of a fish Tribolodon hakonensis in strongly acidic lakes with a high aluminum concentration

Limnology ◽  
2000 ◽  
Vol 1 (3) ◽  
pp. 185-189 ◽  
Author(s):  
A. Takatsu ◽  
S. Eyama ◽  
K. Tsunoda ◽  
K. Satake ◽  
A. Uchiumi ◽  
...  
Keyword(s):  
Lake Water ◽  
Aluminum Concentration ◽  
Tribolodon Hakonensis ◽  
Acidic Lakes ◽  
High Aluminum Concentration ◽  
High Aluminum
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