Processing of yttria stabilized zirconia thin films by liquid fuel combustion chemical vapor deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
Zhigang Xu ◽  
Q. Wei ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Substrate Material ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Metal Reagents

ABSTRACTYttria fully stabilized zirconia (YSZ) thin films have been successfully synthesized with atmospheric combustion chemical vapor deposition (ACCVD) technique with liquid fuel. Key processing parameters, such as the ratio of oxygen to liquid fuel in the flame, the concentration of metal reagents in the solution, the temperature of the substrate and substrate material, have been investigated. The as-grown films are characterized with X-ray diffraction and scanning electron microscopy. Within the range of experimental parameters, the phase of the film is predominantly of cubic structure. The phase and crystallinity of the films are strongly dependent upon the experimental variables.

Combustion Chemical Vapor Deposition of YSZ Thin Films for Fuel Cell Applications

2001 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Q. Wei
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Solid Films ◽  
Experimental Parameters ◽  
Metal Reagents

Abstract Chemical vapor deposition (CVD) is well recognized as the most effective technique to prepare high-quality thin solid films. This technique can be classified into two categories according to the working pressure, i.e. low to very low pressure and high pressure CVD. In this paper, the high pressure CVD technique is interested to the authors. An atmospheric combustion chemical vapor deposition (ACCVD) system has been developed for yttria fully stabilized zirconia (YSZ) thin film processing. Various processing parameters, such as the ratio of oxygen to liquid fuel in flame, the concentration of metal reagents in the solution, the temperature of the substrate, and so on, have been investigated. The as-grown films are characterized with x-ray diffraction and scanning electron microscopy. Within the range of experimental parameters, the phase of the film is predominately cubic one. It was shown that the phase and crystallinity of the films are strongly dependent upon the experimental variable.

Chemical vapor deposition of electrolyte thin films based on yttria-stabilized zirconia

2009 ◽  
Vol 45 (6) ◽  
pp. 659-665 ◽  
Author(s):  
N. V. Gelfond ◽  
O. F. Bobrenok ◽  
M. R. Predtechensky ◽  
N. B. Morozova ◽  
K. V. Zherikova ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

Nucleation And Growth of Yttria-Stabilized Zirconia Thin Films Using Combustion Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Sergey Yarmolenko ◽  
Qiuming Wei
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Nucleation Rate ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Total Metal ◽  
Vapor Deposition Technique

ABSTRACTLiquid fuel combustion chemical vapor deposition technique was successfully used for YSZ thin film processing. The nucleation rates were obtained for the samples processed at different temperatures and total-metal-concentrations in the liquid fuel. An optimum substrate temperature was found for the highest nucleation rate. The nucleation rate was increased with the total-metal-concentration. Structural evolution of the thin film in the early processing stage was studied with regard to the formation of nuclei, crystallites and final crystals on the films. The films were found to be affected by high temperature annealing. The crystals and the thin films were characterized with scanning electron microscopy.

In Situ Heteroepitaxial Bi2Sr2CaCu2O8 Thin Films Prepared by Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
Frank Dimeo ◽  
Bruce W. Wessels ◽  
Deborah A. Neumayer ◽  
Tobin J. Marks ◽  
Jon L. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Phase ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Metalorganic Chemical

AbstractBi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure metalorganic chemical vapor deposition using fluorinated β–diketonate precursors. The influence of the growth conditions on the oxide phase stability and impurity phase formation was examined as well as the superconducting properties of the films. Thin films deposited on LaAIO3 substrates were epitaxial as confirmed by x-ray diffraction measurements, including θ-2θ and φ scans. Four probe resistivity measurements showed the films to be superconducting with a maximum Tc0 of 90 K without post annealing. This Tc0 is among the highest reported for thin films of the BSCCO (2212) phase, and approaches reported bulk values.

Deposition of YSZ Thin Films by Liquid Fuel Combustion Chemical Vapor Deposition

2002 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Qiuming Wei ◽  
Jim Lua ◽  
Sergey Yamolenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Film Growth ◽  
Early Stage ◽  
Chemical Vapor ◽  
Nucleation Density

Thin film of YSZ electrolyte is highly desired to reduce the electrical resistance in SOFCs. YSZ thin Films have been successfully produced using liquid fuel combustion chemical vapor deposition (CCVD) technique. Nucleation of the YSZ particles were investigated based on two processing parameters, i.e., substrate temperature and total-metal-concentration in the liquid fuel. An optimum substrate temperature was found for highest the nucleation density. The nucleation density was increased with the total-metal-concentration. Microstructure evolution of the YSZ particles in the early stage in film growth was also studied. It was found that the particle growth rate was linear with processing time, and the particle orientation was varying with the time in the early stage of the film processing. To enhance the film growth rate, the effect of thermophoresis was studied. By increase the temperature gradient towards substrate, the effect of thermophoresis was enhanced and the film growth is also increased.

Room temperature copolymerization to improve the thermal and dielectric properties of polyxylylene thin films by chemical vapor deposition

1994 ◽  
Vol 9 (12) ◽  
pp. 3125-3130 ◽  
Author(s):  
Justin F. Gaynor ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Weight Loss ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conformal Coatings

Polyxylylene thin films grown by chemical vapor deposition (CVD) have long been utilized for uniform, pinhole-free conformal coatings. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We show room temperature copolymerization with previously untested comonomers during the CVD process. Samples were studied with wavelength dispersive analysis, FTIR, scanning variable angle ellipsometry, and x-ray diffraction. Copolymerizing chloro-p-xylylene with perfluoro-octyl methacrylate results in dielectric constants at optical frequencies as low as 2.19, compared to 2.68 for the homopolymer. Copolymerizing p-xylylene with 4-vinylbiphenyl resulted in films whose onset of weight loss in TGA measurements was 450 °C, compared to 270 °C for the homopolymer.

Alloying In2O3 and Ga2O3 on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition

2021 ◽  
Author(s):  
Yuri Ogura ◽  
Yuta Arata ◽  
Hiroyuki NISHINAKA ◽  
Masahiro YOSHIMOTO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
X Ray Diffraction ◽  
Transparent Conductive Films ◽  
Conductive Films ◽  
Phase Crystal ◽  
Deep Ultraviolet

Abstract We studied the phase diagram of (In x Ga1−x )2O3 thin films with a composition of x = 0 to 1 on Aluminum Nitride (AlN) templates grown using mist chemical vapor deposition. From X-ray diffraction results, we observed that the (In x Ga1−x )2O3 thin films exhibited three different single-phase crystal structures depending on the value of x: orthorhombic (κ)-(In x Ga1−x )2O3 for x ≤ 0.186, hexagonal (hex)-(In x Ga1−x )2O3 for 0.409 ≤ x ≤ 0.634, and body-centered cubic (bcc)-(In x Ga1−x )2O3 for x ≥ 0.772. The optical bandgap of (In x Ga1−x )2O3 was tuned from 3.27 eV (bcc-In2O3) and 4.17 eV (hex-InGaO3) to 5.00 eV (κ-Ga2O3). Moreover, hex-(In x Ga1−x )2O3 exhibited a wide bandgap (4.30 eV) and a low resistivity (7.4×10‒1 Ω·cm). Furthermore, hex-(In x Ga1−x )2O3 thin films were successfully grown on GaN and AlGaN/GaN templates. Therefore, hex-(In x Ga1−x )2O3 can be used in transparent conductive films for deep-ultraviolet LEDs.

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