Dielectric Properties of Spray Deposited BaTiO3 and Ba0.68Sr0.32TiO3

2001 ◽  
Vol 698 ◽  
Author(s):  
Kipyung Ahn ◽  
Bruce W. Wessels ◽  
Robert Greenlaw ◽  
Sanjay Sampath
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Ferroelectric Phase ◽  
Dielectric Constants ◽  
Second Phase ◽  
Spray Process ◽  
Plasma Spray Process ◽  
Hvof Spray ◽  
Deposited Films

ABSTRACTThe microstructure and dielectric properties of BaTiO3 and Ba0.68Sr0.32TiO3 thick films deposited by thermal spray were investigated. The as-deposited films were predominantly crystalline with a small amount of an amorphous second phase. The as-deposited BaTiO3 films had dielectric constants as high as 240 at room temperature. Upon annealing in air at 500°C, the dielectric constant increased to 480. This increase in dielectric constant was attributed, in part, to the crystallization of the amorphous second phase. The stabilized phase depended on the spray process used. The high velocity oxy fuel (HVOF) spray process resulted in the deposition of paraelectric BaTiO3, whereas the plasma spray process resulted in the ferroelectric phase.

Dielectric properties of plasma-spray-deposited BaTiO3 and Ba0.68Sr0.32TiO3 thick films

2003 ◽  
Vol 18 (5) ◽  
pp. 1227-1231 ◽  
Author(s):  
K. Ahn ◽  
B. W. Wessels ◽  
S. Sampath
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Plasma Spray ◽  
Interfacial Layer ◽  
Thick Films ◽  
Low Dielectric Constant ◽  
Second Phase ◽  
Spray Process ◽  
Low Dielectric ◽  
Deposited Films

The dielectric properties of high-k dielectric BaTiO3 and Ba0.68Sr0.32TiO3 thick films deposited on alumina substrates using a plasma-spray process were investigated. The as-deposited films were predominantly crystalline but contained an amorphous second phase, the amount of which depended on spray conditions. The effect of the spray conditions on crystallinity was studied and related to the dielectric properties of the films. The presence of a low dielectric constant interfacial layer in plasma-spray-deposited films was determined from the dependence of the dielectric constant on film thickness. After annealing at 500 °C for 20 h in air, the crystallinity and dielectric constant increased. Annealing was also found to affect the interfacial layer properties.

Preparation and Dielectric Properties of Cu/PVDF Composite Films

2014 ◽  
Vol 1035 ◽  
pp. 417-421 ◽  
Author(s):  
Jian Wen Zhai ◽  
Ya Jun Wang ◽  
Jian Lou Deng ◽  
Chang Gen Feng
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Volume Fraction ◽  
Composite Films ◽  
Interfacial Polarization ◽  
Dielectric Constants ◽  
Pvdf Film ◽  
Continuous Increase ◽  
Better Than

nanoand micro size Cu were employed separately and investigated comparatively. Different volume fraction of Cu was added into PVDF film in order to investigate the content of filler effect on the dielectric properties of polymer composites. XRD and SEM were used to analyze the crystalline phase and microstructure of the films. The results show that two sizes of Cu have the same peak features, and with the continuous increase of the content of Cu, it disperse better in PVDF. The dielectric constant (ε) of the composite containing 16 vol% micro-CCTO filler is 16 at 100 Hz and room temperature, and its dielectric loss (tanδ) is only 0.15, which is substantially better than others. Besides, for 18 vol% nanoCu/PVDF composite tanδis 0.25 andεis 18 at 100 Hz. Moreover,εand tanδof nanoCu/PVDF composite are both higher than those of micro-Cu/PVDF. Analysis shows that the composites with nanoCu have higher dielectric constants, which is mainly from the interfacial polarization.

scholarly journals Porous and Nonporous Film-Shaped Magnetorheological Nanocomposites: Dielectric and Electrical Properties

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Aref Naimzad ◽  
Yousef Hojjat ◽  
Mojtaba Ghodsi
Keyword(s):  
Electrical Conductivity ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Volume Resistivity ◽  
Comparative Investigation ◽  
Dielectric Constants ◽  
Dielectric Losses ◽  
Iron Particles ◽  
Electrical And Dielectric Properties

This paper presents a brief experimental comparative study on electrical and dielectric properties of two sets of porous and nonporous MRNCs, each including five samples of film-shaped magnetorheological nanocomposites (MRNCs) based on room temperature vulcanized (RTV) silicone rubber and nanosized carbonyl iron particles (CIPs). The electrical and dielectric properties of porous and nonporous MRNCs were measured at five different filler concentrations. Several experiments were performed to measure the volume resistivity, dielectric constant, and dielectric loss. The MRNCs dielectric properties were analysed with respect to the parameters like frequency and CIPs loadings. The electrical conductivity was studied in terms of volume resistivity. The comparative investigation suggests the porous MRNCs for smart and light-weighted structures those benefits from a lower electrical property, dielectric losses, and dielectric constants.

Dielectric Properties of Y3+-Doped Ba0.62Sr0.38TiO3 Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 51-53
Author(s):  
Yuan Liang Li ◽  
Yuan Fang Qu ◽  
Feng Long Han ◽  
Chao Liu ◽  
Xiao Yan Li
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Room Temperature ◽  
Dielectric Constants ◽  
Experimental Results ◽  
Dielectric Losses ◽  
Accelerate Growth ◽  
In The Beginning

Microstructure and dielectric properties of Ba0.62Sr0.38TiO3 ceramics doped with x mol% (x=0.2~0.6) Y2O3 were investigated. SEM showed that Y3+ can accelerate growth of the grains at first, then turn to inhabit growth of the grains with further addition of Y3+ above 0.8mol%. The experimental results showed that the dielectric constants were improved with the additive amount of Y3+ increasing, if the amount of Y3+ increased continuously, the dielectric constants will drop, whereas the dielectric losses of the samples descended rapidly in the beginning, then went up obviously with further addition of Y3+ above 1.0mol%, the optimal dielectric constant and dielectric loss could reach 6700 and 0.0015 in the room temperature, respectively.

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

Pulsed Laser Deposition of BaxSr1−xTiO3 Films on MgO, LaAlO3 and SrTiO3 for Tunable Microwave Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
Wontae Chang ◽  
James S. Horwitz ◽  
Won-Jeong Kim ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Film Stress ◽  
Donor Acceptor ◽  
Bst Films

AbstractSingle phase BaxSr1−xTiO3 (BST) films (∼0.5-7 μm thick) have been deposited onto single crystal substrates (MgO, LaAlO3, SrTiO3) by pulsed laser deposition. Silver interdigitated electrodes were deposited on top of the ferroelectric film. The room temperature capacitance and dielectric Q (1/tanδ) of the film have been measured as a function of electric field (≤80 kV/cm) at 1 - 20 GHz. The dielectric properties of the film are observed to strongly depend on substrate type and post-deposition processing. After annealing (≤1000° C), it was observed that the dielectric constant and % tuning decreased and the dielectric Q increased for films deposited onto MgO, and the opposite effect was observed for films deposited onto LaA1O3. Presumably, this change in dielectric properties is due to the changes in film stress. Very thin (∼50 Å) amorphous BST films were successfully used as a stress-relief layer for the subsequently deposited crystalline BST (∼5000 Å) films to maximize % tuning and dielectric Q. Films have been deposited from stoichiometric targets and targets that have excess Ba and Sr. The additional Ba and Sr has been added to the target to compensate for deficiencies in Ba and Sr observed in the deposited BST (x=0.5) films. Films deposited from compensated targets have higher dielectric constants than films deposited from stoichiometric targets. Donor/acceptor dopants have also been added to the BST target (Mn, W, Fe ≤4 mol.%) to further improve the dielectric properties. The relationship between the dielectric constant, the dielectric Q, the change in dielectric constant with electric field is discussed.

scholarly journals Dielectric properties and conductivity of PVdF-co-HFP/LiClO4 polymer electrolytes

2018 ◽  
Vol 96 (7) ◽  
pp. 786-791 ◽  
Author(s):  
Kemal Ulutaş ◽  
Ugur Yahsi ◽  
Hüseyin Deligöz ◽  
Cumali Tav ◽  
Serpil Yılmaztürk ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Polymer Electrolytes ◽  
Room Temperature ◽  
Solid Polymer Electrolytes ◽  
Solid Polymer ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Maximum Conductivity

In this study, it was aimed to prepare a series of PVdF-co-HFP based electrolytes with different LiClO4 loadings and to investigate their chemical and electrical properties in detail. For this purpose, PVdF-co-HFP based electrolytes with different LiClO4 loadings (1–20 weight %) were prepared using solution casting method. X-ray diffraction (XRD), differential scanning calorimetry, and thermogravimetric (TGA) –differential thermal and dielectric spectroscopy analysis of PVdF-co-HFP/LiClO4 were performed to characterize their structural, thermal, and dielectric properties, respectively. XRD results showed that the diffraction peaks of PVdF-co-HFP/LiClO4 electrolytes broadened and decreased with LiClO4. TGA patterns exhibited that PVdF-co-HFP/LiClO4 electrolytes with 20 wt % of LiClO4 had the lowest thermal stability and it degraded above 473 K, which is highly applicable for solid polymer electrolytes. Dielectric constant, dielectric loss, and conductivities were calculated by measuring capacitance and dielectric loss factor of PVdF-co-HFP/LiClO4 in the range from 10 mHz to 20 MHz frequencies at room temperature. In consequence, conductivities of PVdF-co-HFP/LiClO4 increased significantly with frequency for low loading of LiClO4 while they only slightly changed with higher LiClO4 addition. On the other hand, dielectric constant values of PVdF-co-HFP/LiClO4 films decreased with frequency whereas they rose with LiClO4 addition. The dielectric studies showed an increase in dielectric constant and dielectric loss with decreasing frequency. This result was attributed to high contribution of charge accumulation at the electrode–electrolyte interface. The electrolyte showed the maximum conductivity of 8 × 10−2 S/cm at room temperature.

Structural and dielectric properties of Bi2NbxVi−xO5.5 ceramics

1996 ◽  
Vol 11 (9) ◽  
pp. 2288-2292 ◽  
Author(s):  
K. B. R. Varma ◽  
K. V. R. Prasad
Keyword(s):  
Differential Scanning Calorimetry ◽  
Grain Size ◽  
Dielectric Properties ◽  
Curie Temperature ◽  
Room Temperature ◽  
Dielectric Constants ◽  
Scanning Calorimetry ◽  
Electron Microscopic ◽  
Scanning Electron Microscopic ◽  
Scanning Electron

Bi2Nbx V1−xO5.5 ceramics with x ranging from 0.01 to 0.5 have been prepared. The crystal system transforms from an orthorhombic to tetragonal at x 3= 0.1 and it persists until x = 0.5. Scanning electron microscopic (SEM) investigations carried out on thermally etched Bi2NbxV1−xO5.5 ceramics confirm that the grain size decreases markedly (18 μm to 4 μm) with increasing x. The shift in the Curie temperature (725 K) toward lower temperatures, with increasing x, is established by Differential Scanning Calorimetry (DSC). The dielectric constants as well as the loss tangent (tan δ) decrease with increasing x at room temperature.

Dielectric properties of barium titanium niobates

1997 ◽  
Vol 12 (2) ◽  
pp. 526-530 ◽  
Author(s):  
G. L. Roberts ◽  
R. J. Cava ◽  
W. F. Peck ◽  
J. J. Krajewski
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Dielectric Constants ◽  
Partial Substitution ◽  
Dielectric Measurements ◽  
Niobium Oxides ◽  
Polycrystalline Ceramic ◽  
Barium Titanium ◽  
Very Low Temperature

The results of measurements of dielectric constants, in the vicinity of ambient temperature, are presented for eight barium titanium niobium oxides (BaTi1+2nNb4O13+4n for n = 0, 1, 2, 3, 4; Ba3Ti4Nb4O21, Ba3Ti5Nb6O28, and Ba6Ti2Nb8O30) in polycrystalline ceramic form. The dielectric constants are in the range of 30 to 70. The results of dielectric measurements on solid solutions obtained by partial substitution of Ta for Nb are also reported. These substitutions do not dramatically increase the dielectric constants. One material, Ta-substituted Ba3Ti5Nb6O28, has a very low temperature coefficient of dielectric constant at K ≈ 45.

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