Ion Beam Enhanced Grain Growth in Thin Films

AbstractIon beam enhanced grain growth has been investigated in thin films of Ge. Grain boundary mobilities are greatly enhanced over their thermal equilibrium values and exhibit a very weak temperature dependence. We propose that defects which are generated by the ion beam at or near the grain boundary are responsible for the boundary mobility enhancement. Films of Ge deposited under different conditions, either unsupported or on thermally oxidized Si, exhibit similar normal grain growth enhancement when implanted with 50 keV Ge+. Beam-enhanced grain growth in Ge was also demonstrated using Xe+, Kr+, and Ar+ ions. The variation in growth enhancement with projectile ion mass is in good agreement with the enhanced Frenkel defect population calculated using a modified Kinchin-Pease formula and Monte Carlo simulation of ion transport in thin films. Calculations based on experiments suggest that there is approximately one atomic jump across the grain boundary per defect generated. Also, the grain growth rate for a given beam-generated defect concentration near the boundary is approximately equal to the expected growth rate for the same defect concentration if thermally generated.

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A Simple Statistical Theory for Grain Growth in Materials.

MRS Proceedings ◽

10.1557/proc-209-251 ◽

1990 ◽

Vol 209 ◽

Author(s):

P. Mulheran ◽

J.H. Harding

Keyword(s):

Growth Rate ◽

Monte Carlo ◽

Statistical Theory ◽

Stochastic Model ◽

Grain Growth ◽

Three Dimensional ◽

Monte Carlo Procedure ◽

Short Time ◽

2D And 3D ◽

Good Agreement

A Monte Carlo procedure has been used to study the ordering of both two and three dimensional (2d and 3d) Potts Hamiltonians, further to the work of Anderson et al. For the 3d lattice, the short time growth rate is found to be much slower than previously reported, though the simulated microstructure is in agreement with the earlier studies. We propose a new stochastic model that gives good agreement with the simulations.

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The Effects of Cu Dopant on the Microstructure and Non-Ohmic Electrical Properties of ZnO Varistors

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.343-344.160 ◽

2011 ◽

Vol 343-344 ◽

pp. 160-165 ◽

Cited By ~ 1

Author(s):

Ji Wei Fan ◽

Xiao Peng Li ◽

Zhen Guo Zhang ◽

Zhi Qiang Jiao ◽

Xiang Yang Liu ◽

...

Keyword(s):

Electrical Property ◽

Electrical Properties ◽

Grain Boundary ◽

Grain Growth ◽

Electrical Characteristics ◽

Doping Effects ◽

Zno Varistors ◽

Doped Zno ◽

Cu Dopant ◽

Good Agreement

The doping effects of Cu on the microstructure and non-ohmic electrical properties of ZnO varistors were studied. Addition of Cu2O can enhance the ZnO grain growth during sintering. The SEM and EDS results revealed that the added Cu mainly distributed in the grain boundary and spinel phases of ZnO varistors. The Cu2O addition increased the both of grain and grain boundary resistances. However it decreased the non-ohmic electrical characteristics of ZnO varistors, which is a good agreement with similar findings on Ag2O additions, but contrasts to the reports of good non-ohmic electrical property which found on binary Cu doped ZnO varistors.

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The Pyrochlore-to-Perovskite Transformation in Solution-Derived Lead Zirconate Titanate Thin Films

MRS Proceedings ◽

10.1557/proc-361-395 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 24

Author(s):

James A. Voigt ◽

B.A. Tuttle ◽

T.J. Headley ◽

D.L. Lamppa

Keyword(s):

Thin Films ◽

Grain Boundary ◽

Grain Growth ◽

Lead Zirconate Titanate ◽

Volume Change ◽

Crystallographic Orientation ◽

Crystallization Process ◽

Perovskite Phase ◽

Lead Zirconate ◽

Two Dimensional

ABSTRACTWe have characterized the pyrochlore-to-perovskite crystallization process in solution-derived Pb(Zr0.20Ti0.80)O3 thin films on (100) MgO single crystal substrates. It has been determined that the perovskite phase nucleated preferentially at the film/MgO interface out of a nanocrystalline (≈100Å grains) pyrochlore matrix. During the early stages of the pyrochlore-to-perovskite conversion process, perovskite growth proceeded nearly isotropically from the substrate to form hemispherically shaped grains. Deviations from isotropie growth were shown to result from a growth dependence based on the crystallographic orientation of a growing perovskite grain relative to the orientations of pyrochlore grains being transformed. The volume change that occurs during the pyrochlore-to-pervoskite transformation along with two-dimensional grain growth has been used to develop a mechanism for formation of porosity that commonly is concentrated in grain boundary regions.

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Grain Growth Stagnation in Thin Films Due to Shear-Coupled Grain Boundary Migration

SSRN Electronic Journal ◽

10.2139/ssrn.3507457 ◽

2019 ◽

Author(s):

Eugen Rabkin ◽

David J. Srolovitz

Keyword(s):

Thin Films ◽

Grain Boundary ◽

Grain Growth ◽

Boundary Migration ◽

Grain Boundary Migration

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Control of Grain Boundary Microstructures in Sputtered Gold Thin Films by Surface Energy-Driven Grain Growth

Materials Science Forum ◽

10.4028/www.scientific.net/msf.706-709.2880 ◽

2012 ◽

Vol 706-709 ◽

pp. 2880-2885 ◽

Cited By ~ 4

Author(s):

Shigeaki Kobayashi ◽

Ryouta Fukasawa ◽

Tadao Watanabe

Keyword(s):

Thin Films ◽

Surface Energy ◽

Grain Boundary ◽

Grain Growth ◽

High Performance ◽

Coincidence Site Lattice ◽

Grain Boundary Engineering ◽

High Fraction ◽

Percolation Phenomena ◽

Gold Thin Films

The evolution of grain boundary microstructures in gold thin films during annealing was investigated in order to find a clue to the development of high performance thin films by grain boundary engineering. The {111} oriented grains with the lowest surface energy were preferentially grown by surface energy-driven grain growth during annealing. The sharp {111} texture was developed by annealing at the temperature more than 873K. The remarkably high fraction of low-Σ coincidence site lattice (CSL) boundaries occurred when the area fraction of {111} texture increased to more than 95%. In particular, the fraction of some low-Σ CSL boundaries (Σ1,Σ3,Σ7) for the most sharply {111} textured specimen was found to be one order higher than those predicted for a random polycrystal. The utility of grain boundary engineering is discussed for controlling the performance degradation caused by the percolation phenomena of grain boundary diffusion in gold thin films.

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Grain Growth Suppression and Enhancement by Interdiffusion in Thin Films

MRS Proceedings ◽

10.1557/proc-343-33 ◽

1994 ◽

Vol 343 ◽

Cited By ~ 7

Author(s):

Alexander H. King ◽

Karen E. Harris

Keyword(s):

Thin Films ◽

Grain Growth ◽

Electrical Resistance ◽

Growth Suppression ◽

Grain Structure ◽

Growth Enhancement ◽

Metallic Films ◽

Fundamental Understanding ◽

Solute Atoms ◽

Almost All

ABSTRACTGrain structure and grain growth in thin metallic films are important because of their effects on properties such as yield strength, electrical resistance and electromigration resistance. Since almost all thin films are used in contact with a substrate and many also have contacts with overlayers, it is important to consider how interactions with other materials affect the grain growth process. In this paper we consider the effects of diffusive interactions. We will show that interdiffusion often accompanies grain growth and that it can result in a number of novel grain boundary reactions, driven by a variety of effects. Using TEM techniques, we demonstrate cases of grain growth suppression and grain growth enhancement resulting from interdiffusion of solute atoms in gold thin films. The reasons for the observed effects will be considered with a view to providing a fundamental understanding of the types of systems that might be expected to exhibit the various phenomena.

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The Effect of Thermal Spike on the Ion Irradiation Induced Grain Growth

MRS Proceedings ◽

10.1557/proc-235-565 ◽

1991 ◽

Vol 235 ◽

Author(s):

K. H. Chae ◽

J. H. Song ◽

J. H. Joo ◽

J. J. Woo ◽

C. N. Whang ◽

...

Keyword(s):

Grain Growth ◽

Low Dose ◽

Ion Irradiation ◽

Ion Beam ◽

Heat Of Mixing ◽

High Dose ◽

Thermal Spike ◽

Close Relationship ◽

Basic Parameters ◽

Good Agreement

ABSTRACTThe relation between the ion irradiation induced grain growth in bilayer system and the basic parameters involved in ion beam mixing process was studied. TEM micrographs showed that a significant grain growth has been induced by Ar+ irradiation at room temperature. The grain size increases rapidly in low dose region, while it approaches a saturated value in high dose region, and it has close relationship with thermodynamic properties such as cohesive energy ( ΔHc ) and heat of mixing( ΔHm ). The experimental results are in good agreement with the model for the grain growth based on the thermal spike induced atomic migration.

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Annealing Textures of Thin Films and Copper Interconnects

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.1 ◽

2005 ◽

Vol 475-479 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Dong Nyung Lee

Keyword(s):

Thin Films ◽

Grain Boundary ◽

Grain Growth ◽

Fiber Type ◽

Boundary Energy ◽

Boundary Surface ◽

Strain Energy Release ◽

Abnormal Grain Growth ◽

Copper Interconnects ◽

Geometric Constraints

Vapor-, electro-, and electroless-deposits have usually strong fiber textures. When annealed, the deposits undergo recrystallization or abnormal grain growth to reduce their energy stored during deposition. The driving force for recrystallization is mainly caused by dislocations, whereas that for abnormal grain growth is due to the grain boundary, surface, interface, and strain energies. During recrystallization and abnormal grain growth, the texture change can take place. The recrystallization and abnormal grain growth textures are in general of fiber type. However, copper interconnects are subjected to non-planar stress state due to geometric constraints during room temperature and/or elevated temperature annealing. The annealing textures of the thin films and copper interconnects are discussed in terms of the minimization of the surface, interface, and strain energies, the grain boundary energy and mobility, and the strain-energy-release maximization.

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